SMD Type Transistors

PNP Transistors
2SA1341
SOT-23 Unit: mm
2.9 -0.1
+0.1

0.4 -0.1
+0.1

0.4
■ Features

+0.1
2.4 -0.1

+0.1
1.3 -0.1
● Collector Current Capability IC=-100mA

0.55
1 2
● Collector Emitter Voltage VCEO=-50V 0.95 -0.1
+0.1
0.1 -0.01
+0.05

1.9 -0.1
+0.1

● Complementary to 2SC3395

+0.1
0.97 -0.1
1.Base

2.Emitter

+0.1
0.38 -0.1
0-0.1
3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Collector - Base Voltage VCBO -50
Collector - Emitter Voltage VCEO -50 V
Emitter - Base Voltage VEBO -10
Collector Current - Continuous IC -100
mA
Collector Current - Pulse ICP -200
Collector Power Dissipation PC 200 mW
Junction Temperature TJ 150
℃
Storage Temperature range Tstg -55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50
Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 V
Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -10
Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1
Collector-emitter cut-off current ICEO VCE= -40 V , IB=0 -0.5 uA
Emitter cut-off current IEBO VEB= -5V , IC=0 -80
Collector-emitter saturation voltage VCE(sat) IC=-5 mA, IB=-0.25mA -0.3 V
DC current gain hFE VCE= -5V, IC= -5mA 50
Input off voltage VI(off) VCE= -5V, IC= -100uA -0.8 -1.5
V
Input on voltage VI(on) VCE= -0.2V, IC= -5mA -1 -5
Input resistance R1 32 47 62
KΩ
Input resistance ratlo R1/R2 0.9 1 1.1
Collector output capacitance Cob VCB= -10V, f=1MHz 5.3 pF
Transition frequency fT VCE= -10V, IC= -5mA 200 MHz

■ Marking
Marking BL

1
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 SMD Type Transistors

PNP Transistors
2SA1341
■ Typical Characterisitics

2
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