UMT2907A / SST2907A / MMST2907A / PN2907A

Transistors

PNP Medium Power Transistor

(Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A

!Features !External dimensions (Units : mm)

1) BVCEO< -60V (IC=-10mA)
UMT2907A 2.0±0.2

2) Complements the UMT2222A / SST2222A / 1.3±0.1

0.65 0.65 0.2
0.9±0.1
0.7±0.1

MMST2222A / PN2222A. (1) (2)

1.25±0.1

2.1±0.1
0~0.1

(3)

0.1~0.4
0.3+0.1
−0 0.15±0.05
All terminals have (1) Emitter
same dimensions
ROHM : UMT3 (2) Base
!Package, marking and packaging specifications EIAJ : SC-70 (3) Collector
Part No. UMT2907A SST2907A MMST2907A PN2907A
Packaging type UMT3 SST3 SMT3 TO-92
Marking R2F R2F R2F - SST2907A 2.9±0.2
0.95 +0.2
1.9±0.2 −0.1
Code T106 T116 T146 T93
0.95 0.95 0.45±0.1
Basic ordering unit
3000 3000 3000 3000 (1) (2)
(pieces)

−0.1
1.3+0.2
0~0.1

2.4±0.2
0.2Min.
(3)
All terminals have
same dimensions +0.1
0.15 −0.06
0.4 +0.1
−0.05
(1) Emitter
!Absolute maximum ratings (Ta=25°C) ROHM : SST3 (2) Base
(3) Collector
Parameter Symbol Limits Unit
Collector-base voltage VCBO -60 V
Collector-emitter voltage VCEO -60 V
Emitter-base voltage VEBO -5 V MMST2907A 2.9±0.2
1.1+0.2
−0.1
1.9±0.2
0.8±0.1
Collector current IC -0.6 A 0.95 0.95

UMT2907A, (1) (2)

0~0.1
2.8±0.2
−0.1
1.6+0.2

Collector power SST2907A, 0.2

dissipation PC W
MMST2907A (3)

PN2907A 0.625
0.3~0.6

All terminals have

same dimensions +0.1
0.15 −0.06
Junction temperature Tj 150 ˚C 0.4 +0.1
−0.05 (1) Emitter
Storage temperature Tstg -55~+150 ˚C ROHM : SMT3
EIAJ : SC-59 (2) Base
(3) Collector

PN2907A 4.8±0.2 3.7±0.2

4.8±0.2

2.5Min.
(12.7Min.)

0.5±0.1

(1) (2) (3)

2.5 +0.3
−0.1
(1) Emitter
5 0.45±0.1 2.3
ROHM : TO-92 (2) Base
EIAJ : SC-43 (3) Collector
 UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO −60 − − V IC=10mA
Emitter-base breakdown voltage BVEBO −5 − − V IE=10µA
ICBO − − −100 VCB=−50V
Collector cutoff current nA
ICES − − −100 VCB=−30V
Emitter cutoff current IEBO − − −100 nA VEB=−3V
− − −0.4 IC/IB=−150mA/−15mA
Collector-emitter saturation voltage VCE(sat) V
− − −1.6 IC/IB=−500mA/−50mA
0.6 − −1.3 IC/IB=−150mA/−15mA
Base-emitter saturation voltage VBE(sat) V
− − −2.6 IC/IB=−500mA/−50mA
75 − − VCE=−10V, IC=−0.1mA
100 − − VCE=−10V, IC=−1mA
DC current transfer ratio hFE 100 − − − VCE=−10V, IC=−10mA
100 − 300 VCE=−10V, IC=−150mA
50 − − VCE=−10V, IC=−500mA
Transition frequency fT 200 − − MHz VCE=−20V, IC=−50mA, f=100MHz
Collector output capacitance Cob − − 8 pF VCB=−10V, f=100kHz
Emitter input capacitance Cib − − 30 pF VEB=−2V, f=100kHz
Turn-on time ton − − 50 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
Delay time td − − 10 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
Rise time tr − − 40 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
Turn-off time toff − − 100 ns VCC=−30V, IC=−150mA, IB1=IB2=−15mA
Storage time tstg − − 80 ns VCC=−30V , IC=−150mA, IB1=IB2=−15mA
Fall time tf − − 30 ns VCC=−30V, IC=−150mA, IB1=IB2=−15mA

!Electrical characteristic curves

100 1.8
BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V)

Ta=25˚C 600 Ta=25˚C

1.6 IC / IB=10
COLLECTOR CURRENT : IC (mA)

500 1.4

1.2
400
1.0
50
300
0.8

200 0.6

0.4
100
0.2
1B=0µA
0 0
0 5 10 1.0 10 100 1000
COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter output Fig.2 Base-emitter saturation

characteristics voltage vs. collector current

1000
Ta=25˚C
DC CURRENT GAIN : hFE

VCE=10V

100 1V

10
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs. collector current ( I )

 UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors

1000
VCE=10V
DC CURRENT GAIN : hFE

Ta=125˚C
Ta=25˚C

100
Ta=−55˚C

10
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( II )

1000
Ta=25˚C Ta=25˚C
VCE=10V IC / IB=10

SATURATION VOLTAGE : VCE (sat) (V)

f=1kHz 0.3
AC CURRENT GAIN : hFE

0.2
COLLECTOR-EMITTER

100

0.1

10 0
0.1 1.0 10 100 1000 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.5 AC current gain vs. collector current Fig.6 Collector-emitter saturation

voltage vs. collector current

1.8 1000 100

CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)

COLLECTOR-EMITTER VOLTAGE : VCE(V)

BASE-EMITTER ON VOLTAGE : VBE(on) (V)

Ta=25˚C Ta=25˚C
Ta=25˚C
1.6 VCE=10V VCE=10V
100MHz
1.4 300MHz
200MHz
1.2 10

1.0
100
0.8 250MHz
0.6 1

0.4

0.2 200MHz
0 10 0.1
1.0 10 100 1000 1 10 100 1000 1 10 100 1000
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.7 Grounded emitter propagation Fig.8 Gain bandwidth product Fig.9 Gain bandwidth product
characteristics vs. collector current
 UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors

100 1000 500

Ta=25˚C Ta=25˚C Ta=25˚C
f=1MHz IC / IB=10 VCC=30V
IC / IB=10

TURN ON TIME : ton (ns)

Cib
CAPACITANCE (pF)

RISE TIME : tr (ns)

100

Cob VCC=30V
10 100

10V

10

1 10 5
0.1 1 10 100 1 10 100 1000 1 10 100 1000
REVERSE BIAS VOLTAGE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.10 Input/output capacitance Fig.11 Turn-on time vs.collector Fig.12 Rise time vs. collector
vs. voltage current current

1000 1000
Ta=25˚C Ta=25˚C
VCC=30V VCC=30V
IC=10IB1=10IB2 IC=10IB1=10IB2
STORAGE TIME : ts (ns)

FALL TIME : tf (ns)

100 100

10 10
1 10 100 1000 1 10 100 1000
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.13 Storage time vs. collector Fig.14 Fall time vs. collector
current current