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2 2/3 1
A Y Y Y
1 A 4/3 A 1
Y
The Foot
• What if pulldown network is ON during
precharge?
• Use series evaluation transistor to prevent
fight.
precharge transistor Y Y
Y inputs inputs
A f f
foot
footed unfooted
Logical Effort
Inverter NAND2 NOR2
1
Y
1 1
A 2
unfooted Y Y
A 1 B 2 A 1 B 1
gd = gd = gd =
pd = pd = pd =
1
Y
1 1
A 3
Y Y
footed A 2 B 3 A 2 B 2
gd = gd = gd =
2 pd = 3 pd = 2 pd =
C2MOS
The clocked transistors are placed in series with the p-
channel and n-channel transistor of a standard inverter.
The layout is simplified because the source/drain regions of
the two p-channel transistors can be merged.
The output of C2MOS is available during the entire clock
cycle.
The load capacitor is the storage node for the dynamic
charge.
Pre charge Evaluate Logic
– 0 -> 1 A
– 1 -> 1
– But not 1 -> 0 violates monotonicity
during evaluation
A
• Since the node is capacitive, we model it as a capacitor ‘C’ that can be used to
hold a charge.
The logic’1’ is given at input Vi and control. The voltage across the capacitor
increases to
Vmax = (VDD - Vt )
Charge Leakage
Initially, Vs was at Vmax indicating that a logic 1 was stored on the capacitor.
However, since leakage currents remove charge, Vmax cannot be held and Vs
will decrease in time.
Because the stored charge will leak away over time, this circuit is termed a
dynamic storage circuit.
Dynamic Charge Storage
• The pass transistor can discharge the inverter gate to 0V to give a good low
logic level. In this case, the inverter output is high and PMOS feedback
transistor is OFF.
The pass transistor can pull the inverter input voltage high enough to force the
inverter’s output to a low logic voltage. This low voltage turns on the PMOS
feedback transistor, thereby pulling the inverter input to the upper supply
voltage and holding it there.
Leakage
• Dynamic node floats high during evaluation
– Transistors are leaky (IOFF 0)
– Dynamic value will leak away over time
– Formerly miliseconds, now nanoseconds!
• Use keeper to hold dynamic node
weak keeper
– Must be weak enough
1 k not to fight evaluation
X
H Y
A 2
2
Charge Sharing
• Dynamic gates suffer from charge sharing
Y A
A x CY
Y
B=0 Cx Charge sharing noise
CY
Vx VY VDD
C x CY
Secondary Precharge
• Solution: add secondary precharge transistors
– Typically need to precharge every other node
• Big load capacitance CY helps as well
secondary
precharge
Y transistor
A x
B