POWER ELECTRONICS

Lecture No. 6
INSULATED GATE BIPOLAR TRANSISTORS

• When the development of power MOSFETs encountered difficulty in

increasing their current-handling capability, the idea of a MOS-controlled
bipolar device was developed to overcome the problem. This effort led to
today’s insulated gate bipolar transistor (IGBT)

• The IGBT fundamentally changes the BJT current control into voltage
control while maintaining the advantages of the BJT
IGBT STRUCTURE
• The IGBT structure is similar to that of a planar power MOSFET
except the difference in the substrate doping type. The fabrication of
the IGBT therefore is almost the same as a power MOSFET.
• This has made its manufacture relatively easy immediately after
conception, and its ratings have grown at a rapid pace as a result of the
ability to scale up both the current and the blocking voltage ratings.
• Today, the largest single-chip IGBT can carry about 100 A and block
more than 3000 V.
IGBT: INSULATED-GATE BIPOLAR
TRANSISTOR

• Combination BJT and MOSFET

• High Input Impedance (MOSFET)
• Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol

4
IGBT CONSTRUCTION
 IGBT EQUIVALENT CIRCUIT FOR VGE>VT
PNP transistor turns ON,
+ VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.

MOS transistor conducts,

drawing current from the
Base of the PNP transistor. NPN Transistor
becomes forward
biased at the BE,
drawing current 6
from the Base of the
PNP transistor.
COMPARISON