POWER ELECTRONICS

Lecture No. 6
MOSFET
• The metal-oxide-semiconductor field-effect
transistor (MOSFET) is the most commonly
used active device in very large scale
integrated (VLSI) circuits
• Limitations of bipolar power transistors
THRESHOLD VOLTAGE

• This is defined as the minimum gate electrode bias required to strongly

invert the surface under the poly and form a conducting channel
between the source and the drain regions. Vth is usually measured at a
drain-source current of 250 μA. A value of 2 to 4 V for high-voltage
devices with thicker gate oxides and logic-compatible values of 1 to 2
V for lower-voltage devices with thinner gate oxides are common. With
power MOSFETs finding increasing use in portable electronics and
wireless communications where battery power is at a premium, the
trend is toward lower values of Rds on and Vth
APPLICATIONS
• Portable Electronics and Wireless Communication
With the recent advances in the portable electronic products, low Rds on, logic
level surface mount power MOSFET are experiencing explosive demand. A
portable computer, for example, uses power MOSFETs in the AC-DC
converters, the DC-DC converters and voltage regulators, load management
switches, battery charger circuitry, and reverse battery protection.
INSULATED GATE BIPOLAR TRANSISTORS

• When the development of power MOSFETs

encountered difficulty in increasing their current-
handling capability, the idea of a MOS-controlled
bipolar device was developed to overcome the
problem. This effort led to today’s insulated gate
bipolar transistor (IGBT)
• The IGBT fundamentally changes the BJT current
control into voltage control while maintaining the
advantages of the BJT
IGBT STRUCTURE
• The IGBT structure is similar to that of a planar power MOSFET
except the difference in the substrate doping type. The fabrication of
the IGBT therefore is almost the same as a power MOSFET.
• This has made its manufacture relatively easy immediately after
conception, and its ratings have grown at a rapid pace as a result of the
ability to scale up both the current and the blocking voltage ratings.
• Today, the largest single-chip IGBT can carry about 100 A and block
more than 3000 V.
IGBT: INSULATED-GATE BIPOLAR
TRANSISTOR

• Combination BJT and MOSFET

• High Input Impedance (MOSFET)
• Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol

7
IGBT CONSTRUCTION
 IGBT EQUIVALENT CIRCUIT FOR VGE>VT
PNP transistor turns ON,
+ VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.

MOS transistor conducts,

drawing current from the
Base of the PNP transistor. NPN Transistor
becomes forward
biased at the BE,
drawing current 9
from the Base of the
PNP transistor.
COMPARISON