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  • Power Electronics Lec.

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    Fahmeed Ali Meo
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    This document discusses various power semiconductor devices used in power electronics. It describes key differences between power diodes and signal diodes, including their structure and ability to handle higher voltages. Power transistors like bipolar junction transistors (BJTs), metal-oxide semiconductor field-effect transistors (MOSFETs), and insulated-gate bipolar transistors (IGBTs) are also covered. The document discusses the need for power transistors to have modified structures compared to small signal transistors to handle higher currents and voltages. Characteristics of power diodes and transistors like turn-off behavior and current-voltage relationships are also summarized.

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    This document discusses various power semiconductor devices used in power electronics. It describes key differences between power diodes and signal diodes, including their structure and ability to handle higher voltages. Power transistors like bipolar junction transistors (BJTs), metal-oxide semiconductor field-effect transistors (MOSFETs), and insulated-gate bipolar transistors (IGBTs) are also covered. The document discusses the need for power transistors to have modified structures compared to small signal transistors to handle higher currents and voltages. Characteristics of power diodes and transistors like turn-off behavior and current-voltage relationships are also summarized.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    17 views10 pages

    Power Electronics Lec.

    Uploaded by

    Fahmeed Ali Meo
    This document discusses various power semiconductor devices used in power electronics. It describes key differences between power diodes and signal diodes, including their structure and ability to handle higher voltages. Power transistors like bipolar junction transistors (BJTs), metal-oxide semiconductor field-effect transistors (MOSFETs), and insulated-gate bipolar transistors (IGBTs) are also covered. The document discusses the need for power transistors to have modified structures compared to small signal transistors to handle higher currents and voltages. Characteristics of power diodes and transistors like turn-off behavior and current-voltage relationships are also summarized.

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    © All Rights Reserved
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    of 10

    POWER ELECTRONICS

    Lecture No. 3 & 4


    POWER SEMICONDUCTOR DEVICES
    • POWER DIODES
    • POWER TRANSISTOR
    • BIPOLAR JUNCTION TRANSISTOR (BJT)
    • METAL OXIDE SEMICONDUCTOR FIELD EFFECT
    TRANSISTOR (MOSFET)

    • INSULATED-GATE BIPOLAR JUNCTION TRANSISTOR (IGBT)


    • THYRISTOR (SCR, MCT)
    POWER DIODE
    • Difference between signal diode and power
    diode

    • Silicon carbide(SiC)
    • Structure difference
    • P-I-N, n- drift region
    • The width of this drift region determines the
    breakdown voltage 
    • Rectifier, voltage clamper, voltage multiplier
    POWER DIODE
    Ratings
    Maximum Average Forward Current
    Peak Inverse Voltage
    • Testing a Power Diode
    • An ohmmeter can be used to test power diodes. The ohmmeter is
    connected so that the diode is forward-biased.
    Applications: Rectifier, voltage clamper, voltage multiplier
    CHARACTERISTICS OF POWER DIODE
    • Current-Voltage Characteristics
    CHARACTERISTICS OF POWER DIODE
    • Turn-Off characteristics
    (Reverse recovery
    characteristics)

    • Reverse recovery time


    • Softness factor Ratio Tb/Ta 
    • S-factor Turn-Off Characteristics of Power Diode: a) Variation of
    Forward Current if ; b) Variation of Forward Voltage Drop
    vf ; c) Variation of Power Loss
    POWER TRANSISTOR
    • Power transistors are devices that have controlled turn-on and turn-
    off characteristics.
    • These devices are used a switching devices and are operated in the
    saturation region resulting in low on-state voltage drop.
    • They are turned on when a current signal is given to base or control
    terminal.
    • The transistor remains on so long as the control signal is present.
    POWER TRANSISTOR

    Classification
    • Bipolar junction transistors(BJTs)
    • Metal-oxide semiconductor filed-effect transistors(MOSFETs)
    • Insulated-gate bipolar transistors(IGBTs)
    POWER TRANSISTOR
    Bipolar junction transistors(BJTs)
    • The need for a large blocking voltage in the off state and a high
    current carrying capability in the on state means that a power BJT
    must have substantially different structure than its small signal
    equivalent.

    • The modified structure leads to significant differences in the I-V


    characteristics
    POWER TRANSISTOR

    • Conventional Transistor
    • Thin p-layer is sandwiched between two n-layers
    or vice versa to form a three terminal device with
    the terminals named as Emitter, Base and
    Collector.

    • A power transistor is a vertically oriented four


    layer structure of alternating p-type and n-type.

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