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EEP-712
Prof. Dr. ABDUL QADIR
COURSE CONTENTS
The course is divided in three main parts: circuit analysis, modelling, circuit topology design, and
controls and applications. Selected topics discussed within these three parts include, but are not
limited to:
1. Circuit analysis and modelling
Modelling and analysis of dc-dc converters. Analysis of switched systems
Real components (switches, loads, sources, and passive components)
Passive filter analysis and design
2. Circuit topology design and control
Single-phase and 3-phase rectifiers
Single-input and multiple-input dc-dc converters
Inverters
Thermal aspects
3. Controls and applications
Linear and nonlinear control methods in power electronics
Power electronics converters for renewable and alternative energy. Maximum power point tracking
Grid interaction. Islanding. EMI and power factor control
Power electronics for energy storage systems.
RECOMMENDED BOOKS
1. Power Electronics: Circuits, Devices and
Applications by M. H. Rashid, Prentice Hall, 2004
• GTOs
• •The structure of a GTO consists of a four-layer-
PNPN semiconductor device (similar to a
thyristor). The main difference is that the GTO has
long narrow emitter fingers surrounded by gate
electrodes, and higher concentration of
impurities.
• –The turn-on mode is similar to a standard
thyristor, but the gate current must remain
continuous.
• –In order to turn-off a GTO, the gate is reversed
biased with respect to the cathode , which
eventually reverse biases the gate cathode
junction.
Example of I-V Characteristic of 4 kA, 4.5 KV GTO
• IGBT
• •Advantages over MOSFET, BJT and GTO:
• –Similar to the MOSFET, the IGBT has a
high impedance gate, thus requires only
a small amount of energy to switch the
device.
• –Like the BJT, the IGBT has a small on-
state voltage.
• –Similar to the GTO, IGBT can be
designed to block negative voltage.
Summary of switching device capabilities
GTO