Ghulam Ishaq Khan Institute of Engineering Sciences and

Technology, Topi, Pakistan

ME203
Circuits and Electronic Devices

Lecture No: 26

Instructor
Dr. Abid Imran
------Faculty of Mechanical Engineering------ Fall Semester
1 2020
Content

• Dc load lines
• MOSFET
• E-type (enhancement/ depletion mode)
• D-type (enhancement/ depletion mode)
Dc load line:

0
• In cutoff region
  𝑉
  𝐶𝐸 =𝑉 𝐶𝐶

• In Saturation region.
0
  𝑉 𝐶𝐶
  𝐼 𝐶 (𝑠𝑎𝑡 )=
𝑅𝐶
• Different operating point based on base current
  • Load line can be changed by changing the or

• Operating point need to be selected very carefully for amplification

Dc load line:
• we assign three values to IB and observe what happens to IC
and VCE.

  • Find  𝐼 𝐶 =𝐼 𝐵 𝛽 𝐷𝐶

  • Find  

𝐼  𝐶 =20 𝑚𝐴
  For
 

𝐼  𝐶 =30 𝑚𝐴
  For
 

𝐼  𝐶 =40 𝑚𝐴
  For
 
  For
𝐼  𝐶 =20 𝑚𝐴
 

  For

𝐼  𝐶 =30 𝑚𝐴
 

  For

𝐼  𝐶 =40 𝑚𝐴
 
Dc load line:
  𝑉 𝐶𝐶
𝐼 𝐶 (𝑎𝑠𝑡)=
𝑅𝐶

𝑉
  𝐶𝐸 =𝑉 𝐶𝐶
Linear amplification (Linear region)
Linear Operation

• The region along the load line between saturation and cutoff is generally known as the linear
region.
• In this region, the output voltage is ideally a linear reproduction of the input.
Distortion
Distorsion

Too close to saturation region Too close to cutoff region

 Example: Determine the Q-point for the circuit in Figure and draw the dc load
line. Find the maximum peak value of base current for linear operation.
Assume  𝛽 𝐷𝐶 =200

• Base current

• Collector current

• Output voltage 𝑉 𝐶𝐶
𝐼  𝐶 (𝑎𝑠𝑡 )= =60.6 𝑚𝐴
𝑅𝐶
• Collector current can be increased ideally in linear region

• Collector current is being controlled by base current so 𝑉  𝐶𝐸 =𝑉 𝐶𝐶

Can be increased/
Decreased
Metal
Oxide
Semiconductor
Field
Effect
Transistor
1 Current control device
2 low input impedance
3 low thermal stability
4 low switching speed
5 more noisy
6 difficult to fabricate on
IC
Voltage Controlled device
High input impedance
better thermal stability
high switching speed
less noisy
easy to fabricate
Construction of MOSFET

Metal Oxide Semiconductor Field

Effect Transistor

E MOSFET
Symbols of MOSFET

G
S
Basis working principle of E-MOSFET (N channel)
 The MOSFET
• The metal oxide semiconductor field effect transistor (MOSFET) is the second category of FETs.
• There are depletion MOSFETs (D-MOSFET) and enhancement MOSFETs (E-MOSFET). Note the
difference in construction. The E-MOSFET has no structural channel.

Representation of the basic E-MOSFET construction Representation of the basic structure of

and operation (n-channel). D-MOSFETs.
The MOSFET – Enhancement MOSFET (E-MOSFET)
• The E-MOSFET operates only in the enhancement mode and has no depletion mode.
• For n-channel device, a positive gate voltage above threshold value are needed
E-MOSFET Transfer Characteristic
• The E-MOSFET for all practical purposes does not conduct until VGS reaches the threshold voltage (VGS(th)).
• ID when it is when conducting can be determined by the formulas below.
• K = ID(on) /(VGS - VGS(th))2 ID = K(VGS - VGS(th))2

• An n-channel device requires a positive gate-to-source voltage,

• and a p-channel device requires a negative gate-to-source voltage.
Ex. 7-9 The data sheet for a 2N7008 E-MOSFET gives ID(on)= 500 mA (minimum) at VGS = 10 V and VGS(th) = 1 V.
Determine the drain current for VGS = 5 V.

First, solve for K using Equation,

I D ( on) 500 mA 500 mA

K    6. 17 mA / V 2

(VGS  VGS ( th) ) 2 10 V  1V  2 81V 2

Next, using the value of K, calculate ID for VGS = 5 V.

I D  K (VGS  VGS (th ) ) 2

 (6.17 mA / V 2 )(5V  1V ) 2  98.7 mA
BOOK: Electronic Devices, electron flow version.
SECTIONS: 5-1, 8-5

Relevant examples.

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