Professional Documents
Culture Documents
SUPERVISED BY
Prof. Dr. Mahmud Abdul Matin Bhuiyan
Professor
Department of EEE, CUET
Objectives
Conduction Band
Valence Band
Source: https://sinovoltaics.com/learning-center/solar-cells/quantum-dot-solar-cell/
Department of EEE, CUET 2
What is Quantum Dot
Source: ISSUES IN THE PHYSICAL MEASUREMENT OF THE INTERMEDIATE BAND EFFECT. S. Bremner1, K, Ghosh3, N.
Ekins-Daukes2, C. Honsberg3, Stephen Goodnick3
Department of EEE, CUET 8
How IB is produced within Barrier
• The intermediate band (IB) is an electronic band located within the
semiconductor band gap, separated from the conduction and the
valance band by a null density of states.
• There are three ways by which intermediate bands can be formed
within the barrier material band gap. These are:
1. Use of Quantum Dots periodic arrays.
2. Use of Highly Mismatched Alloys.
3. Use of Hyper doped Silicon.
Source: https://www.researchgate.net/figure/a-Schematic-band-diagram-of-a-IB-solar-cell-highlighting-the-sub-bandgap-
optical_fig1_323767448
Department of EEE, CUET 10
How IB works for Higher Efficiency…
Intermediate band solar cell:
Conduction Band
3rd IB
2nd IB
1st IB
Valence Band
Source : Quantum Dot Intermediate Band Solar Cells: Design Criteria and Optimal Materials. A Thesis by
Steven Evans Jenks, Drexel University, USA,2012(April).
Department of EEE, CUET 13
Which material we used and Why
Glass
TCO(Aluminium Doped Zinc Oxide)
Metal Contact(Cu)
Figure No 4: Proposed Model
Department of EEE, CUET 15
Mathematical Model Representation
Eigen energies of the bound stationary states within the confining potential
are the location of mini bands formed by periodic array of QDs. In case
where more than one bound energy levels exists within single QD it is
possible to form more than one bands provided they are separated by at
least 0.5eV[6].
Calculations Of Band Properties Of A Quantum Dot Intermediate Band Solar Cell
[6]
•
(1)
This model assumes that the wave travelling of charge carrier is in the
positive 𝑥 direction for one-dimensional only . Therefore, the
mathematical form of the repeating unit of the potential is
(2)
(3.2)
(4)
where,
• The left-hand side of the equation (4) can be represented by F(ε) for all
values of the ratio of total energy of electrons over conduction band
offset: (ε = E/VO ) [1]. Consider ,
(5)
The induced current density (Jcv) in the traditional SC generates when the
electrons transition from the VB to the CB as follows[3]:
For the 3IBs QDSC, JCI1 and JCI2 are the density of currents generated when the
Quantum Dot Intermediate Band Solar Cells: Design Criteria and Optimal Materials. A Thesis
[3]
Open circuit voltage is calculated by using the value of Jsc and Jo in the
following equation:
The value of bandgap with phosphorus content is obtained from the following
equation,
Where,
Bandgap of AlP, Eg,AlP 2.45 eV
•
0.96 2.313 0.20911*mo 2 0.3225 1.128 1.498 0.0014 0.052 0.179 139.3658 .9887 .8737 75.85
2.5 0.2615 1.162 1.57 0.0035 0.105 0.424 133.7293 .9877 .8725 72.61
3 0.2171 1.144 1.435 0.0064 0.271 0.451 123.5809 .9856 .8298 63.68
3.5 0.1833 1.046 1.453 0.0098 0.178 0.364 118.5637 .9845 .8199 60.30
4 0.1567 0.9102 1.53 0.0134 0.1268 0.322 115.6754 .9839 .8190 58.73
4.5 0.1353 0.7812 1.572 0.0168 0.104 0.352 111.72 .9830 .8093 56
5 0.1179 0.6718 1.551 0.0196 0.0953 0.468 105.49 .9815 .8044 52.47
5.5 0.1036 0.5815 1.463 0.0222 0.0917 0.391 96.45 .9792 .8016 47.70
6 0.1 0.5073 1.338 0.0158 0.0887 0.289 86.355 .9763 .8014 42.57
0.94 2.248 0.20768*mo 2 0.3233 1.129 1.5 0.0015 0.052 0.182 136.0898 .9500 .9131 74.37
2.5 0.2622 1.162 1.572 0.0035 0.107 0.429 140.2876 .9508 .9160 76.98
3 0.2176 1.144 1.436 0.0066 0.219 0.454 130.0237 .9488 .8993 69.9
3.5 0.1837 1.046 1.456 0.01 0.179 0.366 124.8971 .9478 .8592 64.08
4 0.157 0.9102 1.533 0.0136 0.1278 0.325 121.6857 .9471 .8448 61.34
4.5 0.1356 0.7812 1.574 0.017 0.1061 0.363 117.347 .9462 .8419 57.89
5 0.1184 0.6721 1.552 0.0196 0.0959 0.472 110.827 .9447 .8395 55.38
5.5 0..1036 0.5817 1.464 0.0226 0.0913 0.391 101.602 .9424 .8344 50.34
6 0.1 0.5073 1.338 0.0161 0.0913 0.29 91.239 .9396 .8334 45.02
0.92 2.184 0.20626*mo 2 0.3241 1.129 1.503 0.0015 0.053 0.184 142.6956 .9137 .9571 78.62
2.5 0.2628 1.163 1.574 0.0037 0.108 0.433 146.7275 .9144 .9575 80.94
3 0.2182 1.144 1.437 0.0066 0.222 0.457 136.3634 .9125 .9505 74.52
3.5 0.1841 1.046 1.459 0.0102 0.18 0.368 131.1403 .9115 .9380 70.64
4 0.1574 0.9102 1.536 0.0138 0.1288 0.328 127.5864 .9108 .8979 65.74
4.5 0.1359 0.7815 1.578 0.0172 0.106 0.365 122.97 .9098 .8954 63.12
5 0.1186 0.6723 1.554 0.02 0.0975 0.475 116.113 .9083 .8848 58.79
5.5 0.1039 0.5817 1.464 0.0226 0.0939 0.392 106.63 .9061 .8728 53.12
6 0.1 0.5077 1.338 0.0165 0.0916 0.291 96.1232 .9035 .8688 47.4
0.9 2.124 0.20483*mo 2 0.325 1.13 1.506 0.0015 0.054 0.186 148.8893 .8796 .9861 81.36
2.5 0.2635 1.164 1.576 0.0037 0.109 0.438 152.6585 .8802 .9866 83.52
3 0.2187 1.145 1.438 0.0068 0.223 0.461 142.3203 .8784 .9854 77.61
3.5 0.1845 1.046 1.461 0.0104 0.181 0.371 136.9052 .8774 .9845 74.53
4 0.1577 0.9102 1.539 0.014 0.1298 0.330 133.0591 .8767 .9813 72.12
4.5 0.1362 0.7816 1.578 0.0173 0.1069 0.371 127.95 .8756 .9340 65.93
5 0.1185 0.6721 1.555 0.0204 0.0983 0.481 120.93 .8742 .9226 61.45
5.5 0.104 0.5819 1.468 0.0231 0.0942 0.389 111.574 .8721 .9041 55.42
6 0.1 0.5077 1.338 0.017 0.0928 0.292 100.741 .8695 .9019 49.77
0.89 2.094 0.20406*mo 4 0.158 0.9109 1.541 0.0141 0.1301 0.333 134.1012 .8593 .9941 72.17
4.5 0.1363 0.7823 1.58 0.0171 0.1088 0.374 127.5571 .8580 .9532 65.72
5 0.1187 0.6727 1.556 0.0207 0.0996 0.484 124.3952 .8573 .9497 63.82
5.5 0.1041 0.5825 1.466 0.0234 0.0954 0.374 114.9557 .8553 .9355 57.95
6 0.1 0.6018 1.339 0.0174 0.0937 0.294
0.88 2.065 0.2033*mo 4 0.1581 0.9109 1.543 0.0141 0.1301 0.333 135.9375 .8426 .9873 71.25
4.5 0.1365 0.7821 1.581 0.0177 0.1095 0.376 129.586 .8414 .9866 67.78
5 0.1188 0.7729 1.557 0.0209 0.1001 0.486 126.3082 .8407 .9685 64.08
5.5 0.1042 0.5827 1.467 0.0235 0.0958 0.394 115.83 .8385 .9403 57.54
6 0.1 0.6023 1.339 0.0176 0.0941 0.295
0.87 2.036 0.2027*mo 4.5 0.1366 0.8921 1.583 0.0177 0.1097 0.377 130.1828
5 0.1189 0.673 1.558 0.021 0.1004 0.488
5.5 0.1042 0.5827 1.467 0.0237 0.0964 0.395 118.3461 .8220 .9690 59.90
0.86 2.008 0.20187*mo 4 0.1585 0.9109 1.545 0.0145 0.1321 0.337
4.5 0.1367 0.7823 1.584 0.0181 0.1105 0.379
5 0.119 0.673 1.559 0.0212 0.101 0.49
5.5 0.1043 0.5827 1.467 0.0238 0.0969 0.396 120.4745 .8061 .9880 60.45
0.8 1.851 0.1976*mo 4.5 0.1375 0.782 1.59 0.0187 0.1132 0.389
5 0.1205 0.6729 1.562 0.0209 0.1037 0.504
5.5 0.1049 0.5829 1.469 0.0243 0.0981 0.396
6 0.1 0.5084 1.339 0.0191 0.0967 0.298
0.7 1.632 0.19034*mo 4.5 0.1392 0.7824 1.602 0.0198 0.119 0.41 83.38 .8368 .8189 47.12
5 0.1209 0.6736 1.569 0.023 0.108 0.53
5.5 0.1057 0.5835 1.471 0.026 0.104 0.402
6 0.1 0.5091 1.34 0.0213 0.1021 0.304
0.6 1.468 0.18375*mo 4.5 0.1403 0.7829 1.614 0.0215 0.1238 0.43 93.85 .8398 .8212 48.36
5 0.122 0.6741 1.576 0.0246 0.1143 0.643
5.5 0.1066 0.584 1.475 0.0274 0.1096 0.405
6 0.1 0.5099 1.34 0.0235 0.1066 0.312
0.5 1.358 0.176*mo 4.5 0.1419 0.7838 1.629 0.0232 0.1309 0.454 100.64 .8416 .8272 49.39
5 0.1231 0.6755 1.583 0.0266 0.1203 0.584
5.5 0.1076 0.5849 1.477 0.0294 0.1159 0.413
6 0.1 0.5106 1.342 0.0262 0.1129 0.319
0.4 1.301 0.168605*mo 4.5 0.1435 0.7841 1.642 0.0251 0.1381 0.571 104.09 .8685 .8371 51.86
3. For the same dot size , Jsc decreases and Voc increases with an increase
in phosphorous content or the increase in barrier band gap.
5. Band width will get larger value with the increase of dot size.
6. Due to the change of band gap, the change in band position and band
width is negligible for same dot size.
7. Most important point is that though the value Jsc is high for dot size
below 4nm for any value of band gap . but it is seen from the obtained data
that below 4 nm ) the positon of 2nd and 3rd band is very close (less than
0.5eV) which may cause an interaction between bands. This will lead to
thermalization loss. Thus , it is better to use dot size over 4 nm .
85.32
Department of EEE, CUET 44
Results & comparison between conventional and
QDIBSC efficiency
Cell Structure Cell Efficiency Ref.
Single Junction 22.7% 2017, [7]
1Band QDSC(PbSe/GaAs) 37.52% 2017, [7]
2 IB QDSC (AlAs/GaAs) 52.1% 2012, [3]
2 IB QDSC 51.6% 2014, [1]
(IAs.9N.1/GaAs.98Sb.02)
(For Lq = 4nm, Lb = 2nm)
2 IB QDSC 49.27% 2018, [4]
(In.75Ga.25N/GaN)
(For Lq = 1.4nm)
1 IB QDSC 38.88% Our Work
(InAs0.98N.02/AlP0.3Sb0.7 )
(For Lq = 4.5nm, Lb = 2.6 nm)
2 IB QDSC 51.91% Our Work
(InAs0.98N.02/AlP0.3Sb0.7 )
(For Lq = 4.5nm, Lb = 2.6 nm)
3 IB QDSC 63.12% Our Work
(InAs0.98N.02/AlP0.92Sb0.08 )
(For Lq = 4.5nm, Lb = 2.6 nm)
From our work we found that due to introduce QDIB value of short
circuit current density increases. As current density is directly
proportional to the efficiency thus with an increase in current density
efficiency also increases. As the implementation of QDIBSC is quite
difficult and expensive, though the energy density increases we can
neglect the cost for special application like space and research.
From our work we have found theoretical efficiency is about 65% for
3IB. But its practical implementation may provide less efficiency than
theoretical value. But we are hopeful that our work will pave the way
for future research.
13
Referrences
1. Aly AE, Nasr A. Theoretical Study of One-Intermediate Band Quantum Dot Solar
Cell. 2014;2014.
2. Luque, A., Cuadra, L., & Martı, A. (2004). Present status of intermediate band solar
cell research. 452, 593–599. https://doi.org/10.1016/j.tsf.2003.11.047
3. Quantum Dot Intermediate Band Solar Cells: Design Criteria and Optimal
Materials. A Thesis by Steven Evans Jenks, Drexel University, USA,2012(April).
4. Ul I, Chowdhury I, Sarker J, Shifat ASMZ, Shuvro RA, Farzan A. Results in Physics
Performance analysis of high efficiency In x Ga 1 À x N / GaN intermediate band
quantum dot solar cells. Results Phys. 2018;9:432-439. doi:10.1016/j.rinp.2018.03.003
5. Aly, A. E. M., & Nasr, A. (n.d.). The effect of multi-intermediate bands on the
behavior of an InAs 1 — quantum dot solar cell. 042001. https://doi.org/10.1088/1674-
4926/36/4/042001
6. Calculations Of Band Properties Of A Quantum Dot Intermediate Band Solar Cell
With Centrally Located Hydrogenic Impurities. A Thesis by Michael Yehuda Levy,
Georgia University Of Technology , Georgia ,2004(July).
7. MD.Afiqul Isalm, N. S. (2017). Quantum dot intermediate band solar cell.