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402058
Apply vDS
vOV vDS
The voltage
differential between
both sides of n-
channel increases
13/3/2016 402058 – Chap 4: MOS Field Effect Transistors - MOSFETs 11
with vDS.
1.1. OPERATION
saturation occurs
once vDS > vOV
W
For all region: VOV = VGS – VTN, Kn K , K n' n Cox
'
n
Cut-off region: VOV 0: L
iD = 0
Triode region: 0 VDS VOV:
VDS
iD K n VOV VDS
2
Saturation region: 0 VOV VDS:
Kn 2
iD VOV (1 VDS )
2
13/3/2016 402058 – Chap 4: MOS Field Effect Transistors - MOSFETs 14
2. THE P-CHANNEL MOSFET
Modes of operation:
Cut – off
Triode
Saturation (use in amplifier circuits)
NMOS
PMOS
W
For all region: VOV = VGS – VTP, Kp K , K p' p Cox
'
p
Cut-off region: VOV > 0: L
iD = 0
Triode region: 0 |VDS| |VOV|:
VSD
iD K p VOV VSD
2
Saturation region: 0 |VOV| |VDS|:
Kp
iD V (1 VSD )
2
OV
2
13/3/2016 402058 – Chap 4: MOS Field Effect Transistors - MOSFETs 24
EXAMPLE 5.3
RD and RS = ?
dc bias output
voltage voltage
input voltage
to be
amplified
W
g m nCox VOV
L
W 2I D
2 nCox I D
L VOV
DC bias
THE T MODEL
vin Rin
Rin vin vsig
iin Rin Rsig
vx RL
Ro vi 0 vo Avo vi
ix RL Ro
vo
Open circuit voltage gain: Avo RL
vi
vo RL
Voltage gain of the amplifier: Av Avo
vi RL Ro
vo Rin RL
Overall voltage gain: Gv Avo
vsig Rin Rsig RL Ro
13/3/2016 402058 – Chap 4: MOS Field Effect Transistors - MOSFETs 38
7. 3 BASIC CONFIGURATIONS