Lecture on Introduction to ECD

• Why Digital / Analog?

• Comparing BJT with MOSFET.
• Why CMOS?
• Why Miniaturization?
• Why Low Power & High Speed?
BJT Vs. MOSFET
Comparison of BJT with MOSFET:
BJT
Bipolar Device
Fixed bias, Collector base bias,
Voltage divider biasing.
Current Controlled Device
Offers low input impedance
Switching frequency is low
Negative Temperature Coefficient
ESD is not a problem
Thermal Runaway at high
temperature
Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad
MOSFET
Unipolar Device
Self Bias & Voltage Divider Bias
Voltage Controlled Device
Offers large input impedance
Switching frequency is high.
Positive Temperature Coefficient
ESD is a big problem.
No Thermal Runaway.
2
BASIC MOS STRUCTURE

Basic MOSFET Structure.

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 3

MOSFET (With Capacitances)

Basic MOSFET Structure with various Capacitances.

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 4

Capacitances (Continued)

Basic MOSFET Structure with various Capacitances (contd.).

From the Figure in the last slide we see that:

• C1 is the outer-fringing-field capacitance between the gate
and the source or the drain electrode.
• C2 is the direct overlap capacitance between the gate and the

source or drain junction.

• C3 is the inner-fringing-field capacitance between the gate
and the side wall of the source or drain junction.

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 5

Why Low Power Consumption?

Several Reasons underline the emergence of this issue:

1. Battery operated portable devices require more battery life .
2. Reduction of power for high performance systems.
3. With high power dissipation reliability is an issue.
4. Since the usage of electronic equipment is increasing at an
alarming pace hence power hedging has to be done to limit the
power consumption.
5. Ageing effect may reduce the effective life of the device.

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 6

 Unconventional Structures

Unconventional Structures - Hierarchy

Partially Depleted
SOI Structure

SOI
Fully
Depleted SOI
Structure

Unconventional
Structure Multiple Gate Double Gate
Transistor transistor

Double Gate FinFET

FinFET Triple Gate FinFET
Gate All around ..etc.

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 7

 Unconventional Structures (Continued)

Technology Roadmap Beyond Conventional MOSFET

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 8

 Thank you

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 9