C

E
Dr. D G Borse
 The BJT – Bipolar Junction Transistor
Note: Normally Emitter layer is heavily doped, Base layer is lightly
doped and Collector layer has Moderate doping.
The Two Types of BJT Transistors:
npn pnp

E n p n C E p n p C

Cross Section C Cross Section C

B B
B B
Schematic Schematic
Symbol Symbol
E E
• Collector doping is usually ~ 109
• Base doping is slightly higher ~ 1010 – 1011
• Emitter doping is much higher ~ 1017

Dr. D G Borse
 BJT Current & Voltage - Equations
IE IC IE IC
- VCE + + VEC -
E C E
- - C
+ +
VBE IB VBC VEB VCB
IB
- -
+ +
B B

npn pnp
IE = I B + I C IE = I B + I C
VCE = -VBC + VBE VEC = VEB - VCB

Dr. D G Borse
 n
I co
-
Inc
+
VCB
- p-

- Electrons
+ Holes

+ Ipe Ine +
n
VBE - Bulk-recombination
Current

Figure : Current flow (components) for an n-p-n BJT in the active region.
NOTE: Most of the current is due to electrons moving from the emitter through base to the
collector. Base current consists of holes crossing from the base into the emitter and of holes
that recombine with electrons in the base.

Dr. D G Borse
Physical Structure
• Consists of 3 alternate layers of n- and p-
type semiconductor called emitter (E),
base (B) and collector (C).
• Majority of current enters collector,
crosses base region and exits through
emitter. A small current also enters base
terminal, crosses base-emitter junction
and exits through emitter.
• Carrier transport in the active base region
directly beneath the heavily doped (n+)
emitter dominates i-v characteristics of
BJT.

Dr. D G Borse
 C Ic

Recombination
- - - - -- n
- - -
VCB + - - - - - - - -
_ - Electrons

- - - - - + Holes
B - + - - + - -p
+
+ IB
- -
_ VBE - - - - - - -
-- -
-- - - - - -
- - - -
- - n

- - - - - - - - -
E IE
Dr. D G Borse
 For CB Transistor IE= Ine+ Ipe
Ic= Inc- Ico
Bulk-
recombination ICO Inc And Ic= - αIE + ICo
current CB Current Gain, α ═ (Ic- Ico) .
(IE- 0)

For CE Trans., IC = βIb + (1+β) Ico

where β ═ α ,
1- α is CE Gain

Ipe Ine

Figure: An npn transistor with variable biasing sources (common-emitter configuration).

Dr. D G Borse
 Common-Emitter
Circuit Diagram
VCE Collector-Current Curves
IC
IC

+ Active
VCC _ IB
Region

IB
Region of Description
Operation
Active Small base current
VCE
controls a large
collector current Saturation Region
Saturation VCE(sat) ~ 0.2V, VCE Cutoff Region
increases with IC IB = 0
Cutoff Achieved by reducing IB
to 0, Ideally, IC will also
be equal to 0.

Dr. D G Borse
 BJT’s have three regions of operation:
1) Active - BJT acts like an amplifier (most common use)
2) Saturation - BJT acts like a short circuit
BJT is used as a switch by switching
3) Cutoff - BJT acts like an open circuit between these two regions.

IC(mA)
Saturation Region
IB = 200 A
30

Active Region C When analyzing a DC

22.5
IB = 150 A
B BJT circuit, the BJT
is replaced by one of
E
15
IB = 100 A the DC circuit models
shown below.
IB = 50 A
7.5
Cutoff Region
IB = 0
0 VCE (V)
0 5 10 15 20

DC Models for a BJT: C C

C
ICEO Ro
 dc IB  dc IB
rsat
IB +
B _
B +
+ _
B _ Vo
RBB
Vo Vo
E E
Active Region Model #1 Active Region Model #2
E
Saturat ion Region Model

Dr. D G Borse
 DC  and DC 
 = Common-emitter current gain
 = Common-base current gain
 = IC  = IC
IB IE

The relationships between the two parameters are:

=  = 
+1 1-

Note:  and  are sometimes referred to as dc and dc

because the relationships being dealt with in the BJT
are DC.

Dr. D G Borse
 Output characteristics: npn BJT (typical)
IC(mA)
IC
 dc = = h FE
IB = 200 A IB
30

IB = 150 A
Note: The PE review text
22.5
sometimes uses dc instead of dc.
15
IB = 100 A
They are related as follows:

7.5
IB = 50 A
 dc  dc
 dc =  dc 
IB = 0
 dc + 1 1 -  dc
0 VCE (V)
0 5 10 15 20
• Find the approximate values of
dc and dc from the graph.
Input characteristics: npn BJT (typical)
IB(A)

VCE = 0.5 V
The input characteristics look like the characteristics of a
200 VCE = 0 forward-biased diode. Note that VBE varies only slightly,
VCE > 1 V
so we often ignore these characteristics and assume:
150
Common approximation: VBE = Vo = 0.65 to 0.7V
100

50
Note: Two key specifications for the BJT are

0
Bdc and Vo (or assume Vo is about 0.7 V)
VBE (V)
0 0.5 1.0

Dr. D G Borse
Figure: Common-emitter characteristics displaying exaggerated secondary effects.

Dr. D G Borse
Figure: Common-emitter characteristics displaying exaggerated secondary effects.

Dr. D G Borse
 Various Regions (Modes) of Operation of BJT

Active: • Most important mode of operation

• Central to amplifier operation
• The region where current curves are practically flat

Saturation: • Barrier potential of the junctions cancel each other out

causing a virtual short (behaves as on state Switch)

Cutoff: • Current reduced to zero

• Ideal transistor behaves like an open switch

* Note: There is also a mode of operation called

inverse active mode, but it is rarely used.

Dr. D G Borse
 BJT Trans-conductance Curve
For Typical NPN Transistor 1

Collector Current:
IC IC =  IES eVBE/VT
8 mA Transconductance:
(slope of the curve)

6 mA gm = IC / VBE
IES = The reverse saturation current
4 mA of the B-E Junction.

VT = kT/q = 26 mV (@ T=300oK)
2 mA
 = the emission coefficient and is

usually ~1
0.7 V
VBE

Dr. D G Borse
Three Possible Configurations of BJT

Biasing the transistor refers to applying voltages to the

transistor to achieve certain operating conditions.
1. Common-Base Configuration (CB) : input = VEB &
IE
output = VCB & IC

2. Common-Emitter Configuration (CE): input = VBE & IB

output= VCE & IC

3. Common-Collector Configuration (CC) :input = VBC & IB

(Also known as Emitter follower) output = VEC & IE

Dr. D G Borse
 Common-Base BJT Configuration
VCE
IC IE
C E
Circuit Diagram: NPN Transistor

VCB VBE
The Table Below lists assumptions IB
that can be made for the attributes
of the common-base BJT circuit in
the different regions of operation.

+
_

_
B
Given for a Silicon NPN transistor. VCB VBE

Region of C-B E-B

IC VCE VBE VCB
Operation Bias Bias

Active IB =VBE+VCE ~0.7V  0V Rev. Fwd.

Saturation Max ~0V ~0.7V -0.7V<VCE<0 Fwd. Fwd.

None
Cutoff ~0 =VBE+VCE  0V  0V Rev.
/Rev.

Dr. D G Borse
 Common-Base (CB) Characteristics
Although the Common-Base configuration is not the most
common configuration, it is often helpful in the understanding
operation of BJT
Vc- Ic (output) Characteristic Curves
IC mA
Breakdown Reg.
6
Active
Saturation Region

Region
4 IE
IE=2mA

2
IE=1mA Cutoff
IE = 0

0.8V 2V 4V 6V 8V VCB

Dr. D G Borse
 Common-Collector BJT Characteristics
Emitter-Current Curves
The Common- IE
Collector biasing
circuit is basically
equivalent to the Active
Region
common-emitter
biased circuit except
instead of looking at
IB
IC as a function of VCE
and IB we are looking
at IE.
VCE
Also, since  ~ 1, and
 = IC/IE that means Saturation Region
IC~IE Cutoff Region
IB = 0

Dr. D G Borse
 n p n Transistor: Forward Active Mode Currents
Base current is given by
I V   
I C= I  C  Ico  
exp
BE  1
B     V  
F T 
F    

I B=
20    500 is forward common-emitter
F
current gain
VBE Emitter current is given by
IE= I co  V  
 
I I I  exp
BE  1
E C B    V  
F   T  
Forward Collector current is
 is forward common-
V
 




0.95    F  1.0
I  I co exp BE  1 base current gain
 
  F  1
C V  
F
T  

Ico is reverse saturation current In this forward active operation region,

I I
1018 A  I co  10 9 A C  C 
I F I F
VT = kT/q =25 mV at room temperature B E

Dr. D G Borse
 Various Biasing Circuits used for BJT

• Fixed Bias Circuit

• Collector to Base Bias Circuit
• Potential Divider Bias Circuit

Dr. D G Borse
 The Thermal Stability of Operating Point SIco

The Thermal Stability Factor : SIco

SIco = ∂Ic
∂Ico Vbe, β
This equation signifies that Ic Changes SIco times as fast as Ico
Differentiating the equation of Collector Current IC & rearranging
the terms we can write
SIco ═ 1+β
1- β (∂Ib/∂IC)

It may be noted that Lower is the value of SIco better is the stability

Dr. D G Borse
 The Fixed Bias Circuit
The Thermal Stability Factor : SIco
SIco = ∂Ic
15 V 15 V Vbe, β
∂Ico

200 k
General Equation of SIco Comes out to be
RC 1k
Rb SIco ═ 1+β
C RC 1- β (∂Ib/∂IC)
B
Applying KVL through Base Circuit we
Ib can write, Ib Rb+ Vbe= Vcc
E
Diff w. r. t. IC, we get (∂Ib / ∂Ic) = 0
SIco= (1+β) is very large
Indicating high un-stability

Dr. D G Borse
 The Collector to Base Bias Circuit
The General Equation for Thermal
Stability Factor,
VCC SIco = ∂Ic
∂Ico
RC
Vbe, β
Comes out to be
SIco ═
1+β
Ic 1- β (∂Ib/∂IC)
Applying KVL through base circuit
RF Ib C
we can write (Ib+ IC) RC + Ib Rb+ Vbe= Vcc
Diff. w. r. t. IC we get
B
+ V E (∂Ib / ∂Ic) = - RC / (Rb + RC)
BE
- IE
Therefore, SIco ═ (1+ β)
1+ [βRC/(RC+ Rb)]
Which is less than (1+β), signifying better
thermal stability
Dr. D G Borse
 The Potential Devider Bias Circuit
The General Equation for Thermal Stability
VCC VCC
Factor, SIco ═ 1+β
R1
IC
RC
1- β (∂Ib/∂IC)
Ib B
C
Applying KVL through input base circuit
we can write IbRTh + IE RE+ Vbe= VTh
E

R2 RE
Therefore, IbRTh + (IC+ Ib) RE+ VBE= VTh
IC
Diff. w. r. t. IC & rearranging we get
(∂Ib / ∂Ic) = - RE / (RTh + RE)
1 
VCC Therefore, SIco 
Thevenin  RE 
1 
 RE  RTh 
Equivalent Ckt RC
IC
Ib C
This shows that SIco is inversely proportional
B

RTh
to RE and
E It is less than (1+β), signifying better thermal
+
_ VTh stability
RE
Self-bias Resistor
Rth = R1*R2 & Vth = Vcc R2
Thevenins
Equivalent
Voltage Dr. D G Borse
R1+R2 R1+R2
 A Practical C E Amplifier Circuit
VCC VCC

Input Signal Source

R1 RC

io
C
Co
ii
Rs B +
+ + Ci
E RL vo
vs vi
_ R2 RE CE _

Common Emitter (CE) Amplifier

Dr. D G Borse
 BJT Amplifier (continued)

If changes in operating currents and

voltages are small enough, then IC
and VCE waveforms are undistorted
replicas of the input signal.
A small voltage change at the base
causes a large voltage change at the
collector. The voltage gain is given
by:
~
~ vce 1.65180
An 8 mV peak change in vBE gives a 5 Av  ~   206180  206
v 0.0080
A change in iB and a 0.5 mA change in be
iC.
The minus sign indicates a 1800
The 0.5 mA change in iC gives a 1.65 V phase shift between input and
change in vCE . output signals.
Dr. D G Borse
 A Practical BJT Amplifier using Coupling and Bypass
Capacitors
In a practical amplifier design, C1 and C3 are
large coupling capacitors or dc blocking
capacitors, their reactance (XC = |ZC| = 1/C) at
signal frequency is negligible. They are
effective open circuits for the circuit when DC
bias is considered.
C2 is a bypass capacitor. It provides a low
impedance path for ac current from emitter to
ground. It effectively removes RE (required for
good Q-point stability) from the circuit when ac
signals are considered.
• AC coupling through capacitors is used to inject an ac input signal
and extract the ac output signal without disturbing the DC Q-point
• Capacitors provide negligible impedance at frequencies of interest
and provide open circuits at dc.

Dr. D G Borse
 D C Equivalent for the BJT Amplifier (Step1)

DC Equivalent Circuit
• All capacitors in the original amplifier circuit are replaced by open
circuits, disconnecting vI, RI, and R3 from the circuit and leaving RE
intact. The the transistor Q will be replaced by its DC model.

Dr. D G Borse
 A C Equivalent for the BJT Amplifier (Step 2)

R1IIR2=RB Ro

Rin

• Coupling capacitor CC and Emitter bypass capacitor CE are replaced by short

circuits.
• DC voltage supply is replaced with short circuits, which in this case is connected
to ground.

Dr. D G Borse
 A C Equivalent for the BJT Amplifier
(continued)
All externally connected capacitors are
assumed as short circuited elements for ac
signal

R  R R 10kΩ 30kΩ
B 1 2
R  R R  4.3kΩ 100kΩ
C 3

• By combining parallel resistors into equivalent RB and R, the equivalent AC

circuit above is constructed. Here, the transistor will be replaced by its
equivalent small-signal AC model (to be developed).

Dr. D G Borse
A C Analysis of CE Amplifier
1) Determine DC operating point and
calculate small signal parameters Step 1
2) Draw the AC equivalent circuit of Amp.
• DC Voltage sources are shorted to ground Step
2
• DC Current sources are open circuited
• Large capacitors are short circuits
• Large inductors are open circuits
3) Use a Thevenin circuit (sometimes a Step
3
Norton) where necessary. Ideally the
base should be a single resistor + a single
source. Do not confuse this with the DC
Step
Thevenin you did in step 1. 4

4) Replace transistor with small signal model

5) Simplify the circuit as much as necessary.
Step
Steps to Analyze a Transistor Amplifier 5 π-model
6) Calculate the small signal parameters and used
gain etc.
Dr. D G Borse
 Hybrid-Pi Model for the BJT

Transconductance:
I
g m  C ,VT  KT q
V
T
Input resistance: Rin
 oV o
• The hybrid-pi small-signal model is the r  T 
intrinsic low-frequency representation of I gm
C
the BJT.
Output resistance:
• The small-signal parameters are
V V
controlled by the Q-point and are ro  A CE
independent of the geometry of the BJT. I
C
Where, VA is Early Voltage
(VA=100V for npn)

Dr. D G Borse
 Hybrid Parameter Model

Ii Io
Linear Two
Vi port Device Vo

Ii Io
1 2
hi
Vi hrVo hfIi ho Vo

1' 2'

Vi  h11 I i  h12Vo  hi I i  hrVo

I o  h21 I i  h22Vo  h f I i  hoVo
Dr. D G Borse
 h-Parameters
Vi Vi
h11  h12 
Ii Vo  0 Vo Ii  0
Io Io
h21  h22 
Ii Vo  0 Vo Ii  0
h11 = hi = Input Resistance
h12 = hr = Reverse Transfer Voltage Ratio
h21 = hf = Forward Transfer Current Ratio
h22 = ho = Output Admittance
Dr. D G Borse
 Three Small signal Models of CE Transistor
The Mid-frequency small-signal models
ib ic Alternate names:
b c h fe =  ac =  o = 
hie
+ +
vbe hrevce +
_ hfe ib hoe vce
_ _
e e
h-parameter model

ib ic 38.92
gm = IC (Note: Uses DC value of IC )
b c n
+ + + where n = 1 (typical, Si BJT)
vbe r v rd vce 1
gmv
_  o = h fe rd =
_ _ h oe
e e
hybrid- model o
h re = 0 r = h ie =
gm

ib ic 26 mV
re = (Note: uses DC value of IB )
b c IB
+ +
 o = h fe
vbe re vce
ib  o re = h ie
_ _
h re = 0
e e
re model 1
h oe = 0, or use rd =
h oe

Dr. D G Borse
 BJT Mid-frequency Analysis using the hybrid- model:
VCC VCC
A common emitter (CE) amplifier
R1 RC
io
C The mid-frequency circuit is drawn as follows:
Co
ii
+
• the coupling capacitors (Ci and Co) and the
Rs + Ci B
+ E RL vo bypass capacitor (CE) are short circuits
vs vi
_ R2 RE CE _ • short the DC supply voltage (superposition)
_
• replace the BJT with the hybrid- model
The resulting mid-frequency circuit is shown below
is ii b c io

+ RS + + +
vs RTh vi r v rrod RC RL vo
An a c Equivalent Circuit
gmv
_ _
_ _
e mid-frequency CE amplifier circuit e

v v v  Z v
A  o   g R ' , where, R '  r R R , A  o o i A  i 
v v m L L o L C vs v v v v Z  R 
i s i s  i s
i v v
A  o Z  i  R r , where, R  R R Z  o r R
Th  1 2
o i o C
i i i I Th o v o
i i i
Dr. D G Borse
Details of Small-Signal Analysis for Gain Av (Using Π-model)
Rs  
 v   g v  R R r 
o m be  C 3 o 
    
R
Rs L
From input circuit
   
 vi  R B r  
R r R
o C
R ,  R C R3
3 v    
L
be  R   R r 
 v
v  v   S  
 o  be    B  
A  o 
v v 
v 

 v 
  
i  be  i   R r 
B 
 A  g R  
v  I R   g v  R  
v m L
R   R r 

o o L  m be  L  S  B  
 
Dr. D G Borse
C-E Amplifier Input Resistance

• The input resistance, the total resistance

looking into the amplifier at coupling
capacitor C1, represents the total
resistance presented to the AC source.

v x  ix ( R r )
B
vx
R   R r  R R r
in i B 1 2
x

Dr. D G Borse
C-E Amplifier Output Resistance

• The output resistance is the total equivalent

resistance looking into the output of the
amplifier at coupling capacitor C3. The input
source is set to 0 and a test source is applied
at the output.
v v
ix  x  x  gm v
R ro be
But vbe=0.
C
v
Rout  x  R ro  R
ix C C

since ro is usually >> RC.

Dr. D G Borse
 High-Frequency Response – BJT Amplifiers

Capacitances that will affect the high-frequency response:

• Cbe, Cbc, Cce – internal capacitances
• Cwi, Cwo – wiring capacitances
• CS, CC – coupling capacitors
• CE – bypass capacitor
Dr. D G Borse
 Frequency Response of Amplifiers
The voltage gain of an amplifier is typically flat over the mid-frequency
range, but drops drastically for low or high frequencies. A typical
frequency response is shown below.
For a CE BJT: (shown on lower right)
• low-frequency drop-off is due to CE, Ci and Co
• high-frequency drop-off is due to device capacitances C p and Cm
(combined to form Ctotal)
• Each capacitor forms a break point (simple pole or zero) with a break
frequency of the form f=1/(2pREqC), where REq is the resistance seen by
the capacitor
• CE usually yields the highest low-frequency break
which establishes fLow.
LM(A vi ) = 20log(v o/vi ) [in dB] LM Response for a General Amplifier

20log(A vi(mid))

3dB
BW

f
fLOW fHIGH

Dr. D G Borse
 Amplifier Power Dissipation
• Static power dissipation in amplifiers is determined from their DC
equivalent circuits.

Total power dissipated in C-B

and E-B junctions is: PD VCE IC VBE IB
where V  V V
CE CB BE

Total power supplied is:

P  V  I  I , where I  I  I
S CC  C 2  2 1 B
V V V
CC EQ BE
I  and I 
1 R R B   1
1 2 R  R
EQ  F  E
The difference is the power dissipated by the bias resistors.
Dr. D G Borse
Dr. D G Borse
Figure 4.36a Emitter follower.

Dr. D G Borse
 An Emitter Follower (CC Amplifier) Amplifier

Figure Emitter follower.

Very high input Resistance
Very low out put Resistance
Unity Voltage gain with no phase shift
High current gain
Can be used for impedance matching or a
circuit for providing electrical isolation

Dr. D G Borse
Figure 4.36b Emitter follower.

Dr. D G Borse
Figure 4.36c Emitter follower.

Dr. D G Borse
 Capacitor Selection for the CE Amplifier
1 1
Zc  Capacitive ReactanceXc  Z c  where   2f
jC C
The key objective in design is to make the capacitive reactance
 much smaller at the operating frequency f than the associated
resistance that must be coupled or bypassed.
 
X  R r Make X  0.01 R r for < 1% gain error.

 

c1 B c1 B  

X  0 Make X 1 for <1% gain error.

c2 c2
  
X  R Make X  0.01R  for <1% gain error.

c3 3 c3  3 

Dr. D G Borse
Summary of Two-Port Parameters for
CE/CS, CB/CG, CC/CD

Dr. D G Borse
A Small Signal h-parameter Model of C E - Transistor

= h11

Vce*h12

Dr. D G Borse
 A Simple MOSFET Amplifier

The MOSFET is biased in the saturation region by dc voltage sources VGS and
VDS = 10 V. The DC Q-point is set at (VDS, IDS) = (4.8 V, 1.56 mA) with VGS =
3.5 V.
Total gate-source voltage is: vGS VGS  vgs

A 1 V p-p change in vGS gives a 1.25 mA p-p change in iDS and a 4 V p-p change
in vDS. Notice the characteristic non-linear I/O relationship compared to the BJT.
Dr. D G Borse
 Eber-Moll BJT Model
The Eber-Moll Model for BJTs is fairly complex, but it is
valid in all regions of BJT operation. The circuit diagram
below shows all the components of the Eber-Moll Model:

E IE IC
C

RIC RIE

IF IR

IB
B
Dr. D G Borse
 Eber-Moll BJT Model
R = Common-base current gain (in forward active mode)
F = Common-base current gain (in inverse active mode)
IES = Reverse-Saturation Current of B-E Junction
ICS = Reverse-Saturation Current of B-C Junction

IC = FIF – IR IB = I E - I C
IE = IF - RIR

IF = IES [exp(qVBE/kT) – 1] IR = IC [exp (qVBC/kT) – 1]

 If IES & ICS are not given, they can be determined using various
Dr. D G Borse
 Small Signal BJT Equivalent Circuit
The small-signal model can be used when the BJT is in the active region.
The small-signal active-region model for a CB circuit is shown below:

iB iC
B C

r iB

r = ( + 1) * VT iE
IE
@  = 1 and T = 25C E
Recall:
r = ( + 1) * 0.026  = IC / I B
IE
Dr. D G Borse
 The Early Effect (Early Voltage)
IC
Note: Common-Emitter
Configuration

IB

-VA VCE

Green = Ideal IC
Orange = Actual IC (IC’)

IC’ = IC VCE + 1
VA

Dr. D G Borse
 Early Effect Example
Given: The common-emitter circuit below with IB = 25A,
VCC = 15V,  = 100 and VA = 80.
Find: a) The ideal collector current
b) The actual collector current
Circuit Diagram
VCE
IC  = 100 = IC/IB

a)
+
VCC _ IB IC = 100 * IB = 100 * (25x10-6 A)
IC = 2.5 mA

b) IC’ = IC VCE + 1 = 2.5x10-3 15 + 1 = 2.96 mA

VA 80
IC’ = 2.96 mA
Dr. D G Borse
 Breakdown Voltage
The maximum voltage that the BJT can withstand.

BVCEO = The breakdown voltage for a common-emitter

biased circuit. This breakdown voltage usually
ranges from ~20-1000 Volts.
BVCBO = The breakdown voltage for a common-base biased
circuit. This breakdown voltage is usually much
higher than BVCEO and has a minimum value of ~60
Volts.
Breakdown Voltage is Determined By:
• The Base Width
• Material Being Used
• Doping Levels
• Biasing Voltage

Dr. D G Borse
 Potential-Divider Bias Circuit with Emitter Feedback
Most popular biasing circuit.
Problem: dc can vary over a wide range for BJT’s (even with the same part number)
Solution: Adding the feedback resistor RE. How large should RE be? Let’s see.
VCC VCC VCC
Substituting the active region model into
R1 RC RC the circuit to the left and analyzing the
C C
circuit yields the following well known
B B equation:
RTh
E E
 dc  VTh - Vo  + ICEO  R Th + R E 
IC =
+
_ VTh R Th +   dc + 1 R E
R2 RE RE
where ICEO =   dc + 1 ICBO

ICEO has little effect and is often

Voltage divider biasing
circuit with emitter
feedback
VTh = VCC 
neglected yielding the simpler
Replacing the input circuit by a
Thevenin equivalent circuit yields:
relationship:
 R2   dc  VTh - Vo 
 and R Th = R1 R 2 IC =
R
 1 + R 2
R Th +   dc + 1 R E

Test for stability: For a stable Q-point w.r.t. variations in dc choose:
R Th <<   dc + 1 R E Why? Because then
 dc  VTh - Vo    V - Vo   VTh - Vo 
IC =  dc Th  (independent of dc )
R Th +   dc + 1 R E  dc + 1 R E RE
Dr. D G Borse
PE-Electrical Review Course - Class 4 (Transistors)

Example : Find the Q-point for the biasing circuit shown below.
The BJT has the following specifications:
dc = 100, rsat = 100  (Vo not specified, so assume Vo = 0.7 V)
15 V 15 V

200 k 1k

C
B

Example : Repeat Example 3 if RC is changed from 1k to 2.2k.

Dr. D G Borse
PE-Electrical Review Course - Class 4 (Transistors)

Example Determine the Q-point for the biasing circuit shown.

The BJT has the following specifications:
dc varies from 50 to 400, Vo = 0.7 V, ICBO = 10 nA
18 V 18 V

30 k 10 k
Solution:
C Case 1: dc = 50
B

15 k 8k
Case 2: dc = 400 Similar to Case 1 above. Results are: I C = 0.659 mA, VCE =
6.14 V Summary:

Dr. D G Borse
PE-Electrical Review Course - Class 4 (Transistors)
VCC VCC
BJT Amplifier Configurations
R1 RC
io and Relationships:
C
ii Co
Using the hybrid- model.
Rs B +
+ Ci
+ E RL vo CE CB CC
vs
_
vi
R2 RE CE _
A vi -g m R '
gmR '  1 +  o  R 'L
+  1 +  o  R 'L
_ L L
r
Common Emitter (CE) Amplifier
R 'L rd R C R L rd R C R L RE RL
ii E C 1
R Th  r +  1 +  o  R L' 
io
Rs Co
Zi R Th r R E r
+ Ci gm
+ B RC +
vi RE  r + R Th R S 
vs RL vo
Zo rd R C rd R C RE   
  1 + o  
_
R1
_ _
C2 R2 VCC

 Zi   Zi   Zi 
A vs A vi   A vi   A vi  
Common Base (CB) Amplifier  R s + Zi   R s + Zi   R s + Zi 
VCC VCC
Z  Z  Z 
AI A vi  i  A vi  i  A vi  i 
 RL   RL   RL 
R1

C AP A vi A I A vi A I A vi A I
ii
Rs + Ci B io where R Th = R 1 R 2
+ E
vs Co +
vi R2 RE
_
_
RL vo
_
Note: The biasing circuit is
Common Collector (CC) Amplifier (also called “emitter-follower”) the same for each amplifier.

Dr. D G Borse
Figure 4.16 The pnp BJT.

Dr. D G Borse
Figure 4.17 Common-emitter characteristics for a pnp BJT.

Dr. D G Borse
Figure 4.18 Common-emitter amplifier for Exercise 4.8.

Dr. D G Borse
Figure 4.19a BJT large-signal models. (Note: Values shown are appropriate for typical small-signal silicon devices at
a temperature of 300K.

Dr. D G Borse
Figure 4.19b BJT large-signal models. (Note: Values shown are appropriate for typical small-signal silicon devices at
a temperature of 300K.

Dr. D G Borse
Figure 4.19c BJT large-signal models. (Note: Values shown are appropriate for typical small-signal silicon devices at
a temperature of 300K.

Dr. D G Borse
Dr. D G Borse