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OA based Experiments
Factor Effect Plots
and
Analysis for Best Settings and Predicted Results
By
Prakash R. Apte
COEP, Pune
OA based Experiments
Simplified Polysilicon Deposition Process
(using L9)
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --2
8 STEPS IN TAGUCHI METHOD
for a simplified
POLYSILICON DEPOSITION PROCESS
with 4 variables
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --3
8 STEPS IN TAGUCHI METHODOLOGY
Simplified Polysi Deposition Process:
Reduce Defects and Increase Thickness Uniformity
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --4
8 STEPS IN TAGUCHI METHODOLOGY
Simplified Polysi Deposition Process:
Reduce Defects and Increase Thickness Uniformity
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --5
8 STEPS IN TAGUCHI METHODOLOGY
Simplified Polysi Deposition Process:
Reduce Defects and Increase Thickness Uniformity
Pressure
Gauge Wafers
3-Zone Furnace
Gas To
Inlet Pump
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --6
8 STEPS IN TAGUCHI METHODOLOGY
Simplified Polysi Deposition Process:
Reduce Defects and Increase Thickness Uniformity
Temperature, Pressure,
Variation in :
Settling Time, Cleaning Method
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --7
Step 2: Noise Factors and Their Levels
LEVELS
NoIsE Number of
NoIsE Level 1 NoIsE Level 2 NoIsE Level 3
FACTORS LEVELS
X-axis
End1 Centre End2 3
Locations
Y-axis
low middle top 3
Locations
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --8
8 STEPS IN TAGUCHI METHODOLOGY
Simplified Polysi Deposition Process:
Reduce Defects and Increase Thickness Uniformity
X X X
X X X
X X X
May 2020 Apte 8c: Research Methodology using TRIZ & Taguchi Methods Factor Effects & Analysis --9
8 STEPS IN TAGUCHI METHODOLOGY
Simplified Polysi Deposition Process:
Reduce Defects and Increase Thickness Uniformity
OBJECTIVE FUNCTION :
n
1
(1) Defect Density ---> DEFCETS = – 10 Log10 ---
n y2
SMALLER - THE - BETTER i
i=1
Control Factors = 4
Temperature, Pressure, Settling Time and Cleaning Method
LEVELS
CONTROL
FACTORS
1 2 3
X X X
X X X
X X X
5 To Po to+16 None 141 156 129 161 120 134 154 148 148 ??
6 To Po+200 To CM2 1122 1107 1119 1143 992 978 1071 1063 1159 ??
7 To+25 Po-200 to+16 CM2 126 119 121 138 111 124 136 120 125 ??
8 To+25 Po To CM3 1413 1258 1318 1317 1237 1611 1597 1468 1223 ??
9 To+25 Po+200 to+8 None 1995 2092 2026 1708 1947 1827 2210 1906 1700 ??
Ov-Mean = ??
5 To Po to+16 None 141 156 129 161 120 134 154 148 148 -43.00
6 To Po+200 To CM2 1122 1107 1119 1143 992 978 1071 1063 1159 -61.00
7 To+25 Po-200 to+16 CM2 126 119 121 138 111 124 136 120 125 -42.00
8 To+25 Po To CM3 1413 1258 1318 1317 1237 1611 1597 1468 1223 -63.00
9 To+25 Po+200 to+8 None 1995 2092 2026 1708 1947 1827 2210 1906 1700 -66.00
Ov-Mean = -40.00
a1 = 20 b1 = 10 c2 = 6 d2 = 2
O v -M ean
P o+200
Po-200
T o+25
T o-25
to + 1 6
none
CM3
CM2
to + 8
To
Po
to
-10.00
a1
b1
-20.00 c2 d2
-30.00
-40.00
-50.00
-60.00
By
Prakash R. Apte
COEP, Pune
OA based Experiments
Simplified Polysilicon Deposition Process
(using L9)
a1 = 20 b1 = 10 c1 = 6 d1 = 2
O v -M ean
P o+200
Po-200
T o+25
T o-25
to + 1 6
none
CM3
CM2
to + 8
To
Po
to
-10.00
a1
b1
-20.00 c1 d1
-30.00
-40.00
-50.00
-60.00
a1 = 20 b1 = 10 c1 = 6 d1 = 2
sm
S /NR aR taiot io( s(m a lle
O v -M ean
P o+200
P o-200
T o+25
T o-25
to + 1 6
none
CM2
CM3
to + 8
To
Po
to
S /N
-10.00
-10.00
a1
b1 c1
-20.00
-20.00
d1
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
LEVELS
NoIsE FACTORS NoIsE Level 1 NoIsE Level 2 NoIsE Level 3 Number of LEVELS
LEVELS
CONTROL FACTORS
1 2 3
a1 = 20 b1 = 10 c1 = 6 d1 = 2
sm
S /NR aR taiot io( s(m a lle
O v -M ean
P o+200
P o-200
T o+25
T o-25
to + 1 6
none
CM2
CM3
to + 8
To
Po
to
S /N
-10.00
a1
b1 c1
-20.00
d1
-30.00
-40.00
-50.00
-60.00
-70.00
LEVELS
CONTROL FACTORS 1 2 3
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 40
CVD PROCESS FOR POLYSILICON DEPOSITION
IN VLSI TECHNOLOGY
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 41
MATRIX EXPERIMENTS USING L9 ARRAY
ONLY 9 EXPERIMENTS
OUT OF A TOTAL OF 34 = 81
FOUR CONTROL FACTORS ASSIGNED TO
THE FOUR COLUMNS OF L9
EACH ROW REPRESENTS AN EXPERIMENT
HAVING A COMBINATION OF CONTROL
FACTOR LEVELS
e.g. ROW #3 ( EXPT. #3 ) --> A1 B2 C3 D3
and ROW #8 ( EXPT. #8 ) --> A3 B2 C1 D3
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 42
L9 ORTHOGONAL ARRAY
EXPT. NO. 1 2 3 4
. A . . B . . C . . D .
1 A1 B1 C1 D1
2 A1 B2 C2 D2
3 A1 B3 C3 D3
4 A2 B1 C2 D3
5 A2 B2 C3 D1
6 A2 B3 C1 D2
7 A3 B1 C3 D2
8 A3 B2 C1 D3
9 A3 B3 C2 D1
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 43
L9 ORTHOGONAL ARRAY
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 44
L9 ORTHOGONAL ARRAY
EACH COMBINATION APPEARS only ONCE
EXPT. NO. 1 2 3 4
. A . . B . . C . . D .
1 B1 C1
2 B2 C2
3 B3 C3
4 B1 C2
5 B2 C3
6 B3 C1
7 B1 C3
8 B2 C1
9 B3 C2
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 45
L9 ORTHOGONAL ARRAY
with MEASURED SN-RATIO
EXPT. NO.
1 2 3 4 SN-RATIO η
. A . . B . . C . . D . ( in dB )
1 A1 B1 C1 D1 η1
2 A1 B2 C2 D2 η2
3 A1 B3 C3 D3 η3
4 A2 B1 C2 D3 η4
5 A2 B2 C3 D1 η5
6 A2 B3 C1 D2 η6
7 A3 B1 C3 D2 η7
8 A3 B2 C1 D3 η8
9 A3 B3 C2 D1 η9
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 46
FACTOR EFFECTS
EFFECT OF A FACTOR LEVEL IS DEFINED AS
" THE DEVIATION IT CAUSES FROM OVERALL MEAN , m "
FACTOR EFFECT OF TEMPERATURE LEVEL 3 :
– mA3 = 1/3 * (η 7 + η 8 + η 9 )
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 47
TABULAR AND GRAPHICAL REPRESENTATION
OF FACTOR EFFECTS
or
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 48
L9 ORTHOGONAL ARRAY AND EXPERIMENTER'S LOG
TEMPERATURE COLUMN VARIABLE SHOWS HOW TO ENTER THE EXPT. LOG
1 T0-25--> 1 1 1 1
2 T0-25--> 1 2 2 2
3 T0-25--> 1 3 3 3
4 T0-----> 2 1 2 3
5 T0-----> 2 2 3 1
6 T0-----> 2 3 1 2
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 49
SELECTING OPTIMUM FACTOR LEVELS
BEST LEVELS
FOR TEMPERATURE A1 TO - 25
FOR PRESSURE B1 PO - 200
FOR SETTLING TIME C2 to + 8
FOR CLEANING METHOD D2 CM2
or D3 CM3
A1 B1 C2 D2 or A1 B1 C2 D3 how few ?
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 50
ADDITIVE MODEL
AN ADDITIVE MODEL ( ALSO CALLED SUPERPOSITION MODEL )
RELATIONSHIP BETWEEN RESPONSE VARIABLE AND
CONTROL FACTORS
EFFECTS OF CONTROL FACTOR LEVELS IS ESTIMATED
SEPARATELY
PREDICTION BY SIMPLY ADDING INDIVIDUAL FACTOR
EFFECTS
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 51
ADDITIVE MODEL (CONTD.)
= + ai + b j + ck + dl +...+
DEVIATION CAUSED BY LEVEL Ai FROM µ IS
GIVEN BY ai , BY Bj FROM µ AS bj ETC.
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 52
ADDITIVE MODEL (contd.)
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 53
L8 ORTHOGONAL ARRAY
1 2 3 4 5 6 7
EXPT. NO.
A B C D E F G
1 1 1 1 1 1 1 1
2 1 1 1 2 2 2 2
3 1 2 2 1 1 2 2
4 1 2 2 2 2 1 1
5 2 1 2 1 2 1 2
6 2 1 2 2 1 2 1
7 2 2 1 1 2 2 1
8 2 2 1 2 1 1 2
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 54
L9 ORTHOGONAL ARRAY
EXPT. NO. 1 2 3 4
. A . . B . . C . . D .
1 A1 B1 C1 D1
2 A1 B2 C2 D2
3 A1 B3 C3 D3
4 A2 B1 C2 D3
5 A2 B2 C3 D1
6 A2 B3 C1 D2
7 A3 B1 C3 D2
8 A3 B2 C1 D3
9 A3 B3 C2 D1
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 55
L18 ORTHOGONAL ARRAY
EXPT. 1 2 3 4 5 6 7 8
NO. . A .. B . C . D . E .. F .. G . H .
1 1 1 1 1 1 1 1 1
2 1 1 2 2 2 2 2 2
3 1 1 3 3 3 3 3 3
4 1 2 1 1 2 2 3 3
5 1 2 2 2 3 3 1 1
6 1 2 3 3 1 1 2 2
7 1 3 1 2 1 3 2 3
8 1 3 2 3 2 1 3 1
9 1 3 3 1 3 2 1 2
10 2 1 1 3 3 2 2 1
11 2 1 2 1 1 3 3 2
12 2 1 3 2 2 1 1 3
13 2 2 1 2 2 1 3 2
14 2 2 2 3 3 2 1 3
15 2 2 3 1 1 3 2 1
16 2 3 1 3 3 3 1 2
17 2 3 2 1 1 1 2 3
18 2 3 3 2 2 2 3 1
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 56
ACHIEVING ADDITIVITY
RELATIONSHIP BETWEEN CONTROL FACTORS AND
PERFORMANCE CHARACTERISTIC MUST BE
ADDITIVE
ADDITIVITY ENSURES STABILITY OF DESIGN
UNDER LABORATORY , MANUFACTURING AND
CUSTOMER USAGE
> DESIGN IS ROBUST
ADDITIVITY DEPENDS ON
– CONTROL FACTOR SELECTION
– QUALITY CHARACTERISTIC SELECTION
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 57
ESTIMATION OF FACTOR EFFECTS
USING ADDITIVE MODEL
etc. etc.
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 58
ANALYSIS OF VARIANCE (ANOVA)
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 59
ANOVA - SUM OF SQUARES
9
2
GRAND TOTAL G = i
T
SUM OF SQUARES i=1
SUM OF SQUARES SM = 9 * m2
DUE TO MEAN
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 60
ANOVA - SUM OF SQUARES
DUE TO FACTORS
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 61
DEGREES OF FREEDOM and VARIANCE RATIO 'F'
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 62
ERROR VARIANCE
AND POOLING OF ERRORS
ERROR VARIANCE –
2 SUM OF SQUARES DUE TO ERROR
σe = --------------------------------------------------------
POOLING OF ERRORS
– WHEN DEGREES OF FREEDOM FOR ERROR ARE ZERO
or
– WHEN ONE OR MORE FACTORS HAVE A SMALL
EFFECT ON THE OBJECTIVE FUNCTION
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 63
CONFIDENCE INTERVALS FOR FACTOR EFFECTS
ERROR VARIANCE –
2 SUM OF SQUARES DUE TO ERROR
σe = --------------------------------------------------------
DEGREES OF FREEDOM FOR ERROR
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 64
VARIANCE RATIO ' F ' and
INTERPRETATION OF ANOVA TABLES
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 65
PREDICTION OF IMPROVEMENT
ηOPT = m + a1 + b1
ηOPT = m + (mA1 - m) + (mB1 - m) NO CHANGE
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 66
CONFIRMATION EXPERIMENTS
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 67
INTERACTION AMONGST FACTORS
DESIRABLE – NO INTERACTIONS
– SATISFY ADDITIVITY
ANTI-SYNERGISTIC INTERACTION –
> FAILURE OF ADDITIVE MODEL
> SELECT APPROPRIATE S / N RATIO
> PERFORM FRESH MATRIX EXPERIMENTS
TO STUDY SPECIFIC INTERACTIONS
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 68
EXAMPLES OF ORTHOGONAL ARRAYS
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 69
L8 ORTHOGONAL ARRAY
1 2 3 4 5 6 7
EXPT. NO.
A B C D E F G
1 1 1 1 1 1 1 1
2 1 1 1 2 2 2 2
3 1 2 2 1 1 2 2
4 1 2 2 2 2 1 1
5 2 1 2 1 2 1 2
6 2 1 2 2 1 2 1
7 2 2 1 1 2 2 1
8 2 2 1 2 1 1 2
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 70
L9 ORTHOGONAL ARRAY
EXPT. NO. 1 2 3 4
. A . . B . . C . . D .
#1 1 1 1 1
#2 1 2 2 2
#3 1 3 3 3
#4 2 1 2 3
#5 2 2 3 1
#6 2 3 1 2
#7 3 1 3 2
#8 3 2 1 3
#9 3 3 2 1
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 71
L18 ORTHOGONAL ARRAY
EXPT. 1 2 3 4 5 6 7 8
NO. . A .. B . C . D . E .. F .. G . H .
1 1 1 1 1 1 1 1 1
2 1 1 2 2 2 2 2 2
3 1 1 3 3 3 3 3 3
4 1 2 1 1 2 2 3 3
5 1 2 2 2 3 3 1 1
6 1 2 3 3 1 1 2 2
7 1 3 1 2 1 3 2 3
8 1 3 2 3 2 1 3 1
9 1 3 3 1 3 2 1 2
10 2 1 1 3 3 2 2 1
11 2 1 2 1 1 3 3 2
12 2 1 3 2 2 1 1 3
13 2 2 1 2 2 1 3 2
14 2 2 2 3 3 2 1 3
15 2 2 3 1 1 3 2 1
16 2 3 1 3 3 3 1 2
17 2 3 2 1 1 1 2 3
18 2 3 3 2 2 2 3 1
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 72
L8 ORTHOGONAL ARRAY AND EXPERIMENTER'S LOG
FOR DRILLING HOLE IN A CAST ALLOY WHEEL
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 73
L18 ORTHOGONAL ARRAY AND EXPERIMENTER'S LOG
COMPUTER TUNING for HIGH PERFORMANCE
1 2 3 4 5 6 7 8
EXPT. NO.
F B C D E A G H
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 74
ROLE OF ORTHOGONAL ARRAYS
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 75
Thank You
17-19 Oct 2016 Apte : DoE / Taguchi Method : ROBUST Technology Development Matrix Expt - 76
S /N R a tio (s m a lle r-t h e - b e t te r) in d B
O v -M ean
P o +2 0 0
Po-200
T o +2 5
T o-25
to +1 6
none
CM2
CM3
to +8
Po
To
to
-10.00
-20.00
a1
b1
-30.00 c1 d1
-40.00
-50.00
-60.00
-70.00
a1 = 20 b1 = 10 c1 = 6 d1 = 2
O v -M ean
P o+200
Po-200
T o+25
T o-25
to + 1 6
none
CM2
CM3
to + 8
To
Po
to
-10.00
a1
-20.00 b1 c1 d1
-30.00
-40.00
-50.00
-60.00
-70.00
a1 = 20 b1 = 10 c1 = 6 d1 = 2
O v -M ean
Po+200
P o-200
T o+25
T o-25
to + 1 6
none
CM2
CM3
to + 8
To
Po
to
-10.00
a1
b1 c1
-20.00
d1
-30.00
-40.00
-50.00
-60.00
-70.00