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Imre CNT Devices
Imre CNT Devices
It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the
following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit; a conductance
close to the interfacial limit; an ON/OFF ratio of around 1000; ON current and transconductance close to the low-
quantum-capacitance limit.
Semiconducting nanotubes are typically p-type at Vg=0 because of the contacts and also because chemical species,
particularly oxygen, adsorb on the tube and act as weak p-type dopants. Experiments have shown that changing a
tube’s chemical environment can change this doping level—shifting the voltage at which the device turns on by a
significant amount. This has spurred interest in nanotubes as chemical sensors.
Adsorbate doping can be a problem for reproducible device behavior, however.
Controlled chemical doping of tubes, both p- and n-type, has been accomplished in a number of ways. N-type doping
was first done using alkali metals that donate electrons to the tube. This has been used to create n-type transistors, p-n
junctions, and p-n-p devices. Alkali metals are not air-stable, however, so other techniques are under development,
such as using polymers for charge-transfer doping
Maximum transconductance dI/dVg=20uA/V at Vg=-0.9V. Implying a mean-free path of approx. 700 nm.
Normalizing this to the device width of ~2nm: 10mS/um. McEuen et al., IEEE Trans. Nanotechn., 1, 78 (2002)
Bottom - gated CNT FET
Calculated conductance vs gate voltage at room temperature, varying (a) the
work function of the metal electrode, and (b) doping of the NT.
In (a) the work function of the metal electrode is changed by -0.2 eV (red
dashed), -0.1 eV (orange dashed), 0 eV (green), +0.1 eV (light blue), and +0.2
eV (blue), from left to right, respectively. In (b) the doping atomic fraction is
n-type 0.001 (red), 0.0005 (orange), and 0.0001 (green), and p-type 0.0001
(blue dashed), from left to right, respectively.
Thus the gate field induces switching by modulating the contact resistance
(the junction barriers). Oxygen adsorption at the junctions modifies the
barriers (i.e. the local band-bending of the CNT) and affects the injection of
carriers (holes or electrons).
The inverse subthreshold slope, which is a measure of the
efficiency of the gate field in turning on the device,
decreases with a decrease in gate oxide thickness. This
behavior cannot be explained by conventional field-effect
transistor models, and has in fact been shown to be a result
of the presence of Schottky barriers at the metal/nanotube
interface at the source and drain.
There is a clear difference in the inverse subthreshold slope for the case of sweeping all gate segments together (S=400
mV/dec) versus sweeping only the inner segments (S=180 mV/dec). We attribute the observed change in S to a change from
Schottky barrier modulation to bulk switching. (b) shows linear plots of the subthreshold portion (where the current is
dominated by carrier density) of the transfer characteristics when the inner gate segments are swept together or separately.
The current nearly identical, despite the fact that the effective gate lengths differ by a factor of 1.6 . This is in contrast to the
expected behavior of diffusive transport, where the current varies inversely with the gate length.
Calculated output characteristics of the symmetric
(dashed lines) and the asymmetric (solid lines) CNFET.
We have introduced nanotemplate to control selective growth,
length and diameter of CNT. Ohmic contact of the CNT/metal
interface was formed by rapid thermal annealing (RTA).
Diameter control and surface modification of CNT open the
possibility to energy band gap modulation.
Diode-like rectifying behavior was observed in a CNx /C multiwalled
nanotube due to its being one half doped with nitrogen.
FETs based on an individual CNx /C nanotube were fabricated by
focused ion-beam technology. The nanotube transistors exhibited n-type
semiconductor characteristics, and the conductance of nanotube FETs can
be modulated more than four orders of magnitude at room temperature.
The electron mobility of a CNx /C NT FET estimated from its
transconductance was as high as 3840 cm2/Vs. The n-type gate
modulation could be explained as due the effect of bending of the valence
band in the Schottky-barrier junction.
CNTs doped with fullerenes inside nanotubes (so-called peapods) are interesting materials for novel CNT FET channels.
Transport properties of various peapods such as C60-, Gd@C82-, and Ti2@C92-peapods have been studied by measuring
FET I-V characteristics. Metallofulleren peapod FETs exhibited ambipolar behavior both p- and n-type characteristics by
changing the gate voltage, whereas C60-peapod FETs showed unipolar p-type characteristics similar to the FETs of intact
single-walled nanotubes. This difference can be explained in terms of a bandgap narrowing of the single-walled nanotube
due to the incorporation of metallofullerenes. The bandgap narrowing was large in the peapods of metallofullerene, where
more electrons are transferred from encapsulated metal atoms to the fullerene cages.
The band profile of the SB CNTFET at the minimal leakage bias (VG=0V) for VD=0.6V. The band profile of the
MOS CNTFET when the source-drain current is low. (VD=0.6V and VG=-0.3V). The channel is a (13,0) nanotube.
Id vs. Vd characteristics at VG = 0.4V for the MOS CNTFET Id vs. Vg characteristics at Vd = 0.4V for the zero
(the solid line) and the SB CNTFETs (the dashed lines). The barrier SBFET and the MOS CNTFET. The gated
off-current of all transistors (defined at Vd=0.4V and Vg=0) channel of both transistors is a 5nm-long, intrinsic (13,
was set at 0.01µA by adjusting the flat band voltage for each 0) CNT.
transistor. For the SB CNTFETs, three barrier heights we
simulated. The channel is a (13,0) nanotube, which results in a
diameter of d≈ 1 nm, and a bandgap of Eg≈ 0.83 eV.
By eliminating the Schottky barrier between the source and channel, the transistor will be capable of
delivering more on-current. The leakage current of such devices will be controlled by the full bandgap of
CNTs (instead of half of the bandgap for SB CNTFETs) and band-to-band tunneling. These factors will
depend on the diameter of nanotubes and the power supply voltage.