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Power

u rse
I n s tr
u ctor: Electronics
Co
uj taba
a s san M .edu.pk (MCT-321)
.H et
Engr .muj@u Lecture # 6
an
Hass

University of Engineering & Technology Lahore, Faisalabad Campus


Outline
0 Power Transistors
0 Bipolar Junction Transistors (BJTs)
0 Basics
0 Construction
0 Characteristics

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Control Engineering
Power Transistors
0 These are used for controlled Turn-On and Turn-Off.
0 These have high switching speeds than thyristors but
low voltage and current ratings.
0 These are used for low and medium power
applications.
0 These assumed to be ideal switches for power
conversion techniques.

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Power Transistors
0 Categories:

0 Bipolar junction transistors (BJTs)


0 Metal oxide semiconductor field-effect transistors
(MOSFETs)
0 Static induction transistors (SITs)
0 Insulated-gate bipolar transistors (IGBTs)
0 COOLMOS

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Bipolar Junction Transistors (BJTs)
0 Structure

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Characteristics

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Characteristics

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Breakdown Voltages

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Steady-State Characteristics
0 For switching purpose, Common-Emitter (CE)
configuration is used.
0 For pnp transistor, the current and voltage polarities
are reversed.
0 In active mode, the transistor act as an amplifier.

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Modes of Operation

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Modes of Operation

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BJT Structure (Active)

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Summary
0 BJTs are three layer device which can be used both as
amplifier and switch.
0 It operates in three modes: active, cut-off, saturation.
0 In active mode, it behave like an amplifier. While in cut-off &
saturation, it acts like a switch.
0 It is used for fast switching but for low power applications.
0 BJT has been replaced by MOSFET in low-voltage (<500V)
applications
0 BJT is being replaced by IGBT in applications at voltages
above 500V

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Coming Up

0 Next Lecture:

0 Power Transistors
0 Power MOSFETs

Department of Mechatronics &


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Control Engineering

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