BASIC SEMICONDUCTOR

PHYSICS
ECPE 503:
ECE ELECTIVE 3 – SEMICONDUCTOR DEVICES FOR POWER ELECTRONICS
POWER ELECTRONICS TRACK
SAMPLE PROBLEM NO. 1

Energy Bands
The variation of Si and GaAs bandgaps with temperature
can be expressed as Eg(T) = Eg(0) – α T^2/(T + β), where
Eg(0) = 1.17eV, α = 4.73x10^-4 eV/K, and β=636K for Si;
and Eg(0) = 1.519eV, α = 5.405x10^-4 eV/K, and β=204K
for GaAs.
Find the bandgaps of Si and GaAs at 100K and 600K.
SAMPLE PROBLEM NO. 2

Fermi distribution function

SAMPLE PROBLEM NO. 3

Fermi distribution function

SAMPLE PROBLEM NO. 4

Fermi distribution function

SAMPLE PROBLEM NO. 5

Fermi distribution function

SAMPLE PROBLEM NO. 6

A silicon ingot is doped with 10^16 arsenic atoms/cm^3.

Find the carrier concentration and the Fermi level at room
temperature.
ACTIVITY 3

• Quiz show will be on Nov. 5, 2019.

• 10, 5, 5 questions will be given in Easy, Moderate and Difficult
Round, respectively.
• This will be recorded as Activity.
• Each group will be required to submit 2 questions until Nov. 1, 2019.
• Two groups with the highest accumulated score will be declared as
winners and will have advantage during the next quiz by having
additional points. 1st – 20 pts.; 2nd – 10 pts.