Metal Oxide Semiconductor FET

•In the Metal Oxide Semiconductor Field Effect Transistor

(MOSFET) the gate terminal is electrically insulated from the
current carrying channel. Hence it is also called as Insulated
Gate FET (IG-FET).

•Due to the insulation between gate and source terminals the

input resistance of MOSFET may be very high such as in mega
ohms (MΩ).

•The conductivity (or resistivity) of the path between two

contacts, the source and the drain, is altered by the voltage
applied to the gate.It is also known as a voltage controlled
resistor.
CONT
•Now a days, the MOSFET transistors are mostly used in the
electronic circuit applications.

•MOSFET transistor also have three terminals, such as Drain

(D), Source (S) and Gate (G) and also one more terminal
called substrate or Body (B) is used in the circuit connections.

•The MOSFETs are also available in both types, N-channel

(NMOS) and P-channel (PMOS).

•The MOSFETs are basically classified in to two forms they are

Depletion type and Enhancement type transistors.
 Types of MOSFETS

n-channel p-channel
Enhancement Mode Enhancement Mode
(nMOSFET) (pMOSFET)

n-channel p-channel
Depletion Mode Depletion Mode
(nMOSFET) (pMOSFET)
Symbols for Deplection type
MOSFET
Symbols for Enhancement type
MOSFET
Channel Construction of MOSFET
Structure of MOSFET
 Structure: n-channel MOSFET
(NMOS)
gate: metal or heavily doped poly-Si
G
(bulk or body source IG=0 drain
substrate) B S D
y ID=IS
IS

metal
oxide

n+ n+
p
x

W
L
 •MOS (Metal-Oxide-Semiconductor) Nowadays gate is made of
poly-silicon
• Channel length L and width W
• In most digital design, L is set at the minimum feature size
•W is selectable by the designer
• Bulk is connected to the Gnd in NMOS to prevent forward-biased
PN junction

OFF state
On state
•In both enhancement and depletion modes of MOSFETs an
electric field is produced by gate voltage which changes the
flow charge carriers, such as electrons for N-channel and
holes for P-channel.
•Here we observed that the gate terminal is injected into the
thin metal oxide insulated layer at the top and two N-type
regions are used below the drain and source terminals.
•In the above MOSFET structure the channel between drain
and source is an N-type which is formed opposite to the P-
type substrate.
•It is easy to bias the MOSFET gate terminal for the polarities
of either positive (+ve) or negative (-ve).
•If there is no bias at the gate terminal, then the MOSFET is
generally in non-conducting state so that these MOSFETs are
used to make switches and logic gates.
 MOSFET Applications

MOSFETs are used in digital integrated circuits, such as

microprocessors.

 Used in calculators.

 Used in memories and in logic CMOS gates.

 Used as analog switches.

 MOSFET devices are also applied in audio-frequency

power amplifiers for public address systems