Depletion Type Metal Oxide Semiconductor Field

Effect Transistor (DMOSFET)

DMOSFET

- It is a field-effect transistor (FET with an insulated gate) where the voltage determines the
conductivity of the device.
- It is used for switching or amplifying signals. The ability to change conductivity with the
amount of applied voltage can be used for amplifying or switching electronic signals.

Application of DMOSFET

- It is widely used in power electronics applications, such as switching regulators, motor

control, audio amplifiers, and power supplies. Their low on-resistance and high switching
speed make them well-suited for high-frequency switching applications.

Enhancement-Mode VS Depletion-Mode

- In enhancement-mode DMOSFETs, no current flows between the drain and source when the
gate-source voltage (VGS) is zero. Applying a positive voltage to the gate turns the device
on, allowing current to flow.
- Depletion-mode DMOSFETs, on the other hand, conduct current when VGS is zero and
require a negative voltage to turn off.

References:

- Electronicsforu. (n.d.). MOSFET Basics, Working, Applications. Retrieved from

https://www.electronicsforu.com/technology-trends/learn-electronics/mosfet-basics-working-a
pplications

(Lopez)

Structure

A depletion-type MOSFET's layer is typically made of silicon that has been doped with impurities to
achieve the desired conductivity type. The depletion MOSFET has the same structure as an
enhanced MOSFET, but the gate's oxide layer is separated from the substrate by a thin n-type
doped layer. Unlike enhanced MOSFETs, a depletion MOSFET always has a conducting channel.

The structure of a depletion-type MOSFET is intended to promote its innate depletion mode
operation, in which the channel is generated without the need for external bias. Due to their distinct
structure, depletion-type MOSFETs are ideal for use in analog circuits and other applications that
require consistent conductivity.
References:

Eazambuja. (2019, June 24). Depletion MOSFET. Student Circuit.

https://www.student-circuit.com/learning/year1/semiconductor-devices/semiconductor-devices-deplet
ion-mosfet/

Enhancement Type Metal Oxide Semiconductor

Field Effect Transistor (EMOSFET)

Enhancement Type Metal Oxide Semiconductor Field Effect Transistor (EMOSFET)

● a type of transistor that uses an electric field to control the conductivity of a channel between
the source and drain terminals.
● The channel is normally off, meaning no current can flow, until a sufficient voltage is applied
to the gate terminal, which is insulated from the channel by a thin layer of metal oxide. This
voltage creates an inversion layer of charge carriers in the channel, which allows current to
flow.
● The EMOSFET is also called an enhancement mode MOSFET, because the channel is
enhanced by the gate voltage.

Structure

The source (S) and drain (D) terminals are connected to two n-doped regions in a p-type substrate.
The gate (G) terminal is connected to a metal electrode, which is separated from the substrate by a
thin layer of silicon dioxide (SiO2), the metal oxide. The substrate (B) terminal is usually connected
to the source or to a fixed voltage.

Operation

Gate voltage (VGS) is zero or negative

● No inversion layer in the channel

● The device is off
● The p-n junctions between the source and drain regions and the substrate are reverse
biased, preventing any current flow.

Gate voltage (VGS) is positive and greater than a threshold voltage (VTH)

● Forms an inversion layer of n-type carriers, which acts as a conductive path between the
source and drain.
● The device is on
● The current (ID) is proportional to the gate voltage (VGS).
 ● The current (ID) also depends on the drain voltage (VDS), which creates a voltage drop
along the channel. As the drain voltage increases, the effective channel length decreases,
and the channel resistance increases. This reduces the current (ID), and the device enters
the saturation region. The current (ID) becomes independent of the drain voltage (VDS), and
is determined by the gate voltage (VGS) and the channel geometry.

References:
Libretexts. (2021, July 6). Metal-Oxide-Semiconductor-Field-Effect-Transistor.
Engineering LibreTexts.
https://eng.libretexts.org/Bookshelves/Materials_Science/Supplemental_Modules
_%28Materials_Science%29/Semiconductors/Metal-Oxide-Semiconductor-Field-
Effect-Transistor
Metal Oxide Semiconductor Field-Effect Transistors - Field-Effect Transistors - Basics
Electronics. (n.d.).
https://ecstudiosystems.com/discover/textbooks/basic-electronics/field-effect-tran
sistors/metal-oxide-semiconductor-field-effect-transistors/

Two types of Enhancement MOSFET

N-Channel Enhancement MOSFET

- A N-Channel Enhancement MOSFET is composed of N-type semiconductor material (mainly

something like silicon or germanium). When a positive voltage is applied to the gate it
attracts electrons, creating a conductive channel between the source and drain terminals

Applications:

● Just like any other diode, it can be used as a switch and amplifier
 - Switches - It acts as a switch controlled by the gate voltage. When a sufficient
voltage is applied to the gate, it creates a conductive channel between the source
and drain terminals, allowing current to flow.
- Amplifiers - It amplifies the input signal by controlling the flow through the channel.
P-Channel Enhancement MOSFET
- The P-Channel Enhancement MOSFET is the complete opposite of the N-Channel MOSFET,
as the current flows when a negative voltage is applied to the gate, attracting holes allowing
the current to flow from the source to the drain when the gate voltage is lower than the
source voltage

Applications:
- The P-Channel Enhancement MOSFET practically does the same thing as the N-Channel
MOSFET. It also has the capability to be used in switching and amplifying.

The primary distinction lies in whether the dominant charge carriers in the circuit are positively
charged (referred to as "holes") or negatively charged (electrons).

It is also good to keep in mind that the P-MOSFETs are typically utilized as high-side switches and
load components, while N-MOSFETs find common applications in digital logic and low-side switching
tasks.

Methods and Materials of Fabrication

- Metal oxide semiconductor field effect transistor (MOSFET) sensors detect changes in electrostatic
potential. A MOSFET sensor has three layers: a silicon semiconductor, a silicon oxide insulator, and
a catalytic metal (typically palladium, platinum, iridium, or rhodium), also known as the gate. When
polar molecules interact with this metal gate, the electric field changes, affecting the current flowing
through the sensor.

Basic Fabrication Steps

1. Oxidation
- The technique of creating a layer of silicon dioxide (SiO2) on the surface of a silicon
wafer. It isolates two layers and protects the underlying substance from
 contaminants. Dry-oxidation methods are used to generate very thin oxides
(100-1000 Å). Wet oxidation procedures are used to produce thicker oxides (>1000
Å).

2. Diffusion
- Impurity atoms move from the surface of silicon into the bulk of silicon, from higher to
lower concentrations. Diffusion is commonly done at high temperatures ranging from
800 to 1400 °C

3. Ion Implantation
- Ion implantation is the procedure by which impurity ions are accelerated to high
speeds and physically lodged in the target. It is essential to activate the impurity
atoms and repair any physical damage to the crystal structure. This phase is
performed at temperatures ranging from 500 to 800 °C. Lower temperature than
diffusion, it can also implant through surface layers, making it suitable for
field-threshold modification. Lastly, it has a distinct doping profile with a buried
concentration peak.
4. Deposition
- Materials such as silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum, and
polysilicon are deposited on silicon wafers using various methods such as chemical
vapor deposition (CVD), low-pressure chemical vapor deposition (LPCVD),
plasma-enhanced chemical vapor deposition (PECVD), and sputter deposition.
Materials deposited using these processes cover the whole wafer.

5. Etching
- Etching is the selective removal of a layer of material. There are two forms of
etching: wet, which employs chemicals, and dry, which uses chemically active
ionized gases. Etching involves removing the desired material, the underlying layer,
and the masking layer.

6. Photolithography
- This process includes the following components: photoresist material, photomask,
and material to be patterned (such as SiO2). Photoresists are classified into two
types: positive photoresists, which are soluble in the developer when exposed to UV
light, and negative photoresists, which are soluble in the developer when not
exposed to UV light. To complete this procedure, we lightly bake the photoresist and
expose it to UV light using a photomask. The next step is to remove any undesired
photoresist and hard-bake it. After etching the exposed layer, remove the photoresist.
Performance and Limitation
- Aside from the structure and process technique used to manufacture the device, the
performance of a MOSFET is impacted by several other factors, including package
impedance, printed circuit board (PCB) layout, interconnect parasitics, and switching speed.
Also, channel length has a significant impact on MOSFET performance. In long-channel
devices, the channel length between the source and drain is quite long, whereas in
short-channel devices, it is very short. Short-channel MOS provides a high processing speed
and requires low operating voltage, which increases transistor density on a single chip.
Despite its impressive performance, MOSFETs have several limitations:

- MOSFETs are sensitive to electrostatic charges because of their thin oxide layer.
- Has a short lifespan.
- Repeated calibration is required for precise dosage measurement.
- They are highly vulnerable to voltage overload cause MOSFETs to become unstable, hence
particular handling is essential during installation.

References:
Choudhari, U., Jagtap, S., & Rane, S. (2023). Emerging applications of nanotechnology

for e-nose. In Elsevier eBooks (pp. 57–100).

https://doi.org/10.1016/b978-0-323-91157-3.00008-8

Fabrication process of MOSFET. (n.d.).

https://www.ques10.com/p/29028/fabrication-process-of-mosfet-1/#google_vignet

te

Persson, E. P. & International Rectifier Corp. (2018, July 3). What really limits MOSFET

performance: silicon, package, driver or circuit board? (Part 1 of 2). EE Times.

https://www.eetimes.com/what-really-limits-mosfet-performance-silicon-package-

driver-or-circuit-board-part-1-of-2/

ECSTUFF4U for Electronics Engineer. (n.d.).

https://www.ecstuff4u.com/2018/05/advantages-and-disadvantages-of-mosfet.ht

ml
(Belledo)
(De Guzman)
(Lingasin)

Depletion Type MOSFET

(Dichosa)
(Ruanto)
(Palebino)

- It is a MOSFET that normally turns on even without the application of any gate voltage when
connected to Depletion mode MOSFET.
- In this type of MOSFET, the current flows from drain to source terminal.

Two types of Depletion Mode MOSFET

- The Depletion Mode MOSFET structure has 2 types which are p-channel and n-channel
depletion mode.

N-Channel Depletion MOSFET

-Structure:

The n-channel depletion MOSFET is a type of metal-oxide-semiconductor field-effect transistor

(MOSFET) that operates in a normally-on state. Unlike enhancement MOSFETs, which require a
positive voltage to turn on, depletion MOSFETs are conductive by default and require a negative
voltage (usually referred to as the threshold voltage) to turn off. This is because they have a channel
that is already present, even with zero gate-to-source voltage. Applying a negative voltage to the
gate depletes the channel, reducing conductivity. Conversely, applying a positive voltage allows
current to flow through the channel.
P-Channel Depletion MOSFET
-Structure:

The p-channel depletion MOSFET is the complement of the n-channel depletion MOSFET. It is also
a type of metal-oxide-semiconductor field-effect transistor (MOSFET) but with a p-type
semiconductor channel. Like its n-channel counterpart, the p-channel depletion MOSFET operates
in a normally-on state. This means that it conducts current when no voltage is applied to its gate.
However, applying a positive voltage (usually referred to as the threshold voltage) to the gate
depletes the channel, reducing conductivity and turning the transistor off. Conversely, applying a
negative voltage allows current to flow through the channel, turning the transistor on.

REFERENCES:
Agarwal, T. (2022, September 6). Depletion Mode MOSFET : Types, Characteristics & Its
Applications. ElProCus - Electronic Projects for Engineering Students.
https://www.elprocus.com/depletion-mode-mosfet/#:~:text=A%20MOSFET%20that%20normally
%20turns
N-Channel MOSFET :Working and Its Characteristics. (2019, October 12). WatElectronics.com.
https://www.watelectronics.com/basics-of-n-channel-mosfet-working-and-characteristics/

Agarwal, T. (2022, September 8). N Channel MOSFET : Types, Circuit, Working and Its
Applications. ElProCus - Electronic Projects for Engineering Students.
https://www.elprocus.com/n-channel-mosfet/

P-Channel Depletion MOSFET | Working and V-I Characteristics. (2023, March 28).
https://www.electronicsforu.com/technology-trends/learn-electronics/p-channel-depletion-mosfet
-working-vi-graph#:~:text=P%20channel%20depletion%20MOSFET%20is

PROS

Depletion-type MOSFETs present a distinct option in transistor design. Their

inherent conductivity eliminates the need for gate activation, offering advantages
in specific applications. While lower transconductance limits their digital use, their
linear operation, lower threshold voltage, and unique voltage handling make
them valuable in analog circuits, level shifters, and select RF applications.

Depletion-type MOSFET Characteristics:

● Normally ON: Unlike enhancement-type MOSFETs, they are inherently conductive at

zero gate voltage.
● Linear vs. Saturation: They operate mainly in the linear region, meaning the drain
current varies proportionally to the gate voltage. This makes them suitable for analog
applications requiring linear amplification.
● Lower Threshold Voltage: They typically have lower threshold voltages compared to
enhancement-type MOSFETs.
● Lower Transconductance: They generally exhibit lower transconductance (gm),
leading to less amplification than enhancement-type MOSFETs.

WHILE it’s CONS are:

● Lower Transconductance: While advantageous in some applications, their lower

transconductance limits their applicability in digital circuits where high amplification is
crucial.
 ● Higher On-Resistance: Their inherent channel often results in higher on-resistance
compared to enhancement-type MOSFETs, which can impact power efficiency.

} - RUANTO