MOSFET

PRANJAL MAURYA
ELECTRONICS AND COMM. ENGINEERING
MADAN MOHAN MALVIYA UNIVERSITY OF TECHOLOGY
Gorakhpur, Uttar Pradesh
CONTENTS

 WHAT IS TRANSISTORS?
 TYPE OF TRANSISTORS?
 MOSFET AND THEIR TYPES
1. N CHANNEL MOSFET
2. P CHANNEL MOSFET
 MOSFET CHARACTERISTICS
Types of Transistors
WHAT IS MOSFET?

 Metal Oxide Silicon Field Effect Transistors commonly known

as MOSFETs are electronic devices used to switch or amplify
voltages in circuits. It is a voltage controlled device and is
constructed by three terminals. The terminals of MOSFET are
named as follows:
• Source
• Gate
• Drain
• Body
MOSFET (Types)

 Four types:
 n-channel enhancement mode
 Most common since it is cheapest to manufacture

 p-channel enhancement mode

 n-channel depletion mode
 p-channel depletion mode

n-channel p-channel n-channel p-channel

Depletion type Enhancement type
FET = Field-Effect Transistor MOSFET
A four terminal device (gate, source, drain, bulk)

Symbols of
MOSFET
MOSFET characteristics

 Basically low voltage device. High voltage

device are available up to 600V but with
limited current. Can be paralleled quite
easily for higher current capability.
 Internal (dynamic) resistance between
drain and source during on state,
RDS(ON), , limits the power handling
capability of MOSFET. High losses
especially for high voltage device due to
RDS(ON) .
 Dominant in high frequency application
(>100kHz). Biggest application is in
switched-mode power supplies.
 The transistor consists of three regions, labeled the
``source'', the ``gate'' and the ``drain''.
 The area labeled as the gate region is actually a
``sandwich'' consisting of the underlying substrate
material, which is a single crystal of semiconductor
material (usually silicon); a thin insulating layer
(usually silicon dioxide); andan upper metal layer.
 Electrical charge, or current, can flow from the
source to the drain depending on the charge applied
to the gate region.
 The semiconductor material in the source and drain
region are ``doped'' with a different type of
material than in the region under the gate, so an
NPN or PNP type structure exists between the
source and drain region of a MOSFET.
•Most important device in digital design

•Very good as a switch

•Relatively few parasitics

•Rather low power consumption

•High integration density

•Simple manufacturing

•Economical for large complex circuits

n-Channel MOSFET
 NMOS Structure

 MOS (Metal-Oxide-Semiconductor) Nowadays gate is made of poly-silicon

􀂉 Channel length L and width W
􀁺 In most digital design, L is set at the minimum feature size
􀁺 W is selectable by the designer
􀂉 Bulk is connected to the Gnd in NMOS to prevent forward-biased PN
junction
On state Off state
n-MOSFET Characteristics

Plots V-I characteristics

of the device for various
Gate voltages (VGS)

At a constant value of VDS , we can

also see that IDS is a function of the
Gate voltage, VGS
The transistor begins to conduct
when the Gate voltage, VGS , reaches
the Threshold voltage: VT
 PMOS Structure

 PMOS transistor has a negative threshold voltage (Vtp) -0.3v~-1.2v

 A pMOS turns on when Vgs<Vtp
 P-MOSFET Characteristics

The terminal characteristics of the device are given by

drain-to-source current Ids against drain-to-source
voltage Vds for different values of gate-to-source
voltage Vgs. All voltages are referenced with respect to
the source voltage, which is assumed to be at ground
potential.
Switch models of MOSFETs

g=0 g=1

d d d
nMOS g OFF
ON
s s s

d d d

pMOS g OFF
ON
s s s
Thank You