INTRODUCTION

Nanokristallarning noyob kimyoviy va hajmiga bog'liq xususiyatlari

ularni elektron va fotoelektron materiallar sifatida jozibador nomzodlarga
aylantirdi. Ushbu ma'ruza qo'rg'oshin sulfid (PbS) nanokristallarining
optik va elektr xususiyatlarini o'rganishga qaratilgan bo'lib, ular uchun
zarracha diametrlari l8nm /1,2/ bo'lgan ommaviy qo'zg'alish Bor
radiusidan ancha past bo'lgan kuchli chegaralanish rejimiga erishiladi.
Zarrachalar hajmining o'zgarishi xona haroratida tarmoqli bo'shlig'ining
0,4 eV dan deyarli 4eV gacha o'zgarishiga olib keladi. Biz yangi sintetik
texnikadan foydalangan holda poliakrilamid (PAA) va polivinilbutiral
(PVB) plyonkalar kabi turli polimerlarga o'rnatilgan PbS
nanokristallarining optik va elektr xususiyatlarini xabar qilamiz.
Namunalarning optik xususiyatlari spektroskopik yutilish va
fotoluminesans (PL) bilan o'rganildi. PbS nanokristallarining lTO (indiy
qalay oksidi)/PbS(polimer)/Au strukturasiga integratsiyalashuvi
zarrachalarning elektr xususiyatlarini o'lchash imkonini berdi. Ushbu
struktura kelajakda Schottky-to'siq diodini ishlab chiqishi va boshqa
elektronika va optoelektronika qurilmalarini ishlab chiqarishi mumkin.

Biz 1-25 nm oralig'ida o'rtacha zarracha hajmiga ega PbS nanokristallarini

o'stirdik. PbS nanokristallari PAA yoki PVB polimerlariga o'rnatilgan va
shisha substrat yoki ITO qoplangan shisha ustiga yotqizilgan. PAAda
nanokristallarni tayyorlash 3-ref bo'yicha amalga oshirildi. PVBda tayyorlash
quyidagi bosqichlarni o'z ichiga oldi: 1a) 10 ml TBPga oltingugurt kukuni
qo'shildi.

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Vol. 18, N.o. J, 1999 Optical and Electrical Properties
of Lead Sulfide Nanocrystals

(Tri butylphosphine) and stirred under inert conditions until the powder
completely dissolved I b) the solution was added under inert conditions
to lead(II)-2-ethylhexanoate, which is a viscous liquid. I c) The solution
was sealed by a septum and taken out the inert conditions and placed on a
stirrer until it became a homogenous solution. 2) 0.5 ml aliquots of the
solution were taken every 15 minutes and mixed together with Poly(vinyl
butyral-co vinyl alcohol-covinyl acetate) that was dissolved either in toluene
or acetone.
3) The polymer was left to dry in room temperature conditions.
For electrical measurements the resulting polymer layer contained
20-50% PbS particles (volume wise), because percolative chains off
nano-sized PbS in polymer contribute to the conduction. Contacts of Au
were evaporated on top of the PbS-polymer films in vacuum.
Absorption spectra were recorded using Shimadzu UV-VIS
spectrophotometer. The PL measurements were carried out by exciting the
samples with 1000 W Xe lamp irradiation passing through a
monochromator to select the wavelength. The electrical measurements
(current-voltage) data were recorded by using multimeter (HP 34401)
and voltage/current generator. All measurements were recorded either at
room temperature, or at
cryogenic temperatures.

RESULTS AND DISCUSSION

The absorption spectra of PbS nanocrystals sampled every 15 min

during the growth process are shown in Figure 1. The curves from left to
right show a continuous red shift, indicating a growth of the nanocrystals
diameter.
Figure 2 shows the PL spectrum off PbS nanocrystals embedded in
PVB, recorded at various temperatures from 6-300K. The spectra consist of
a high energy band stocked shifted from the excitation energy by 0.2
eV, and centered around 550 nm. This band decreases continuously with
an increase in the temperature, suggesting its exciton characteristic. This
exciton is shifted by nearly 1.8 eV from the corresponding bulk value,
revealing the strong confinement effect, and the pronounced quantum
size effect. The second band in the PL spectra is centered around 900
nm. Its intensity increases with the increase in temperature up to 75 K and
then decreases with further increase in the temperature, due to
thermalization into non-radiative channels. The last may indicate a defective
recombination
312 process.
A. Sashchiuk, T. Tel-Vered Reviews in Analytical Chemistry. Special Issue:
and E. Lifshitz (Proceedings of Israel Electrochemical Symposium)

l£nergy (eV)
2

4OO 600 BOO 1000

VVavelength(nm)
Fig. 1: Absorption spectra of PbS samples embedded in PVB, recorded at
room temperature.

500 600 700 800 900 1000

Wavelength [nm]
Fig 2: Photoluminescence spectra of the PbS particles
embedded in PVB, recorded at various temperatures.

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Vol. 18, No. 5, 1999 Optical and Electrical Praperties
of Lead Sulfide Nanocrystals

Figure 3 shows the current density-voltage (i-V) curves of two ITO/PbS

(16nm)in polymer/Au structures varying in polymer film thickness, taken
in the dark.
The i-V dependence shows a linear behavior. The measured electrical
resistance of PbS nanocrystals-polymer films is independent of the
magnitude of applied voltage and has Ohmic contacts. A control
experiment
measuring the resistance of a sample prepared with Pb(NO3)2. but not
subjected to sulfide treatment has shown a resistance higher than 10'2 Ohm.
Figure 4 shows the I-V curves of ITO/PbS (10nm)in polymer/Au
structure. The I-V dependence shows characteristics of a Shottky-barrier

10
Sample 1, L=5 rm
-.- - - Sample 2, L=19 km

Voltage [Volt]
Fig. 3: Current density — voltage curve of sample differing in the layer
PAA thickness.

0.D1 r forward
CurrenI [Amp]

1E-4 r

1E-6 r

r
0 1 2 3 4
5 6
Voltage [Volt]
Fig. 4: Current density — voltage curve of particles 10 nm in
size
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A. SashchiuL, T. Tel-Vered Reviews in Analytical Chemistry. Special
and E. Lifshitz Issue: (Proceedings of Israel Electrochemical
Symposium)
diode, involving ITO Ohmic backcontact and Au barrier contact. The I-V
curve shows a well-developed exponential region (0 - 0.15 V) with
rectification ratio of 10 . Above 0.2 V ohmic resistance leads to deviations
from the exponential dependence and between 1-6 V the dependence is of the
form I mV2 .We can see that, depending on the applied voltage and the
temperature, different transport mechanisms may be simultaneously operative
in the barrier diode.

REFERENCES

1. S. Gallazdo, M. Gutierrez, A. Henglein and E. Janata, Ber. Bunsen-

ges. Phys.Chem. 93, 1080 (1989).
2. H. Weller, Angew. Chem. Int. Ed. Engl, .32, 41 (1993).
3. E. Lifshitz, M. Sirota and H. Porteanu, of Crystals Growth,
196,126 (1999).

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