NE

Electronic Streachable Sensor

Based On Carbon Nanotube,
Design And Characterization
Department of Electrical Engineering,
University of Babylon

Prepared by Supervisor
Zahraa Eisa Mohammed Asst. Prof. Dr. Haider Al-Mumen
October 30, 2023
OUTLI
NE
INTRODUCTION
INTRODUC
TION

Carbon nanotubes (CNTs) are carbon atoms bonded

together in a hexagonal lattice like a honeycomb. Each carbon atom is
covalently bonded via sp2 molecular orbitals.
INTRODUC
TION
The structure of CNTs consists of hollow tubes one-
dimensional, made by rolling up a single layer of
graphene.
INTRODUC
TION
Types of Carbon nanotube:

MWCNT

SWCNT
INTRODUC
TION
Types of single-walled carbon nanotubes:

Zigzag Chiral
(m = 0, n > 0, θ = 0˚)
Armchair (m = 0, n > 0, θ = 0˚).

(n = m, θ = 30˚)
INTRODUC
TION
The band gap of CNT:
The Chiral vector
C h= n a1 + m a2 =2.6 eV is a tight binding-overlap integral

The SWCNT diameter: Threshold Voltage:

= 0.144 nm , is the carbon–carbon bond length

INTRODUC
TION

Production of carbon
nanotubes:
Graphite cathode Graphite cathode

Inert gas Deposit

DC source

Arc Discharge
 Furnace Cooled
Laser collector
Graphite target

Inert gas

Laser Ablation
Gaz Outlet C2H2

N2

Oven

Quartz Boat Sample

Chemical Vapour Deposition

 AIMS and
OBJECTIVE
AIMS and
OBJECTIVE
Design and simulation

Single-walled carbon nanotube Single and multi-walled CNTs

field effect transistor with piezoresistive pressure sensors.
controlled specification.

Sensitivity Time response

Frequency response
PROPOSED
METHOD
 Build Geometry Of Design

PROPOSED Based On Dimension.

length, width, CNT diameter,

METHOD CNT thickness, height, and

rotation angle.

Material Selection

COMSOL Multiphysics was utilized to design an Gold, Silicon, Silicon Dioxide,

and Carbon nanotube)

SWCNT- FET with a back gate.

Material Properties
Band gap

CNT was connected between two metal electrodes Electron mobility

Hole mobility
Electron affinity
(source and drain). The effective density of the state conduction
and valence band.

CNT dimensions of 0.345nm, 3.5µm, and 1nm No

thickness, length, and diameter, respectively. Design Parameter
Validation

Yes

Define the Physics

Semiconductor material model
Analytical doping model
Metal contact
PROPOSED
METHOD
Designing CNTFET
 Build Geometry Of Design

PROPOSED Based On Dimension.

length, width, CNT diameter,

METHOD CNT thickness, height, and

rotation angle.

Material Selection
Design of 3D geometry according to the measured dimensions of Gold, Silicon, Silicon Dioxide,
and Carbon nanotube)
length, width, and thickness.

Selecting the material type of design is silicon, silicon dioxide, Material Properties
CNT, and Gold. Band gap
Electric conductivity
Density
Relative permittivity
Each material has properties, including relative permittivity, Young's Young modulus
Poisson ratio
modulus, Poisson's ratio, electrical conductivity, and density.

No
Design Parameter
In solid mechanics physics, the boundary load and fixed constraint Validation

were chosen.
Yes

Define the Physics

Boundary load
Fixed constrained
Current Voltage terminal
PROPOSED
METHOD
Designed CNTFET pressure sensor
RESULT and
DISCUSSION
RESULT and
DISCUSSION
Electronic properties of SWCNT are determined by chiral numbers (n, m).

CNT used for this simulation is a zig-zag nanotube with indices (n,0).
The proposed method of finding the diameter depends on the chirality, where each diameter value has an exact
chirality value.

The SWCNT Parameters at Different Chirality

Chirality Diameter (nm) Drain current (µA) Bandgap (eV) Threshold Voltage (V)

(13,0) 1 4.075 0.747 0.436

(19,0) 1.5 6.604 0.498 0.291
(26,0) 2 9.013 0.373 0.218
(32,0) 2.5 13.168 0.299 0.174
(39,0) 3 17.136 0.249 0.145
(45,0) 3.5 21.487 0.213 0.124
(52,0) 4 26.165 0.186 0.109
(58,0) 4.5 31.33 0.166 0.096
RESULT and
DISCUSSION
•Current-Voltage characteristics (Id-Vd) curves were plotted with various values of gate oxide thicknesses.
•The diameter of CNT of 1nm and the thickness of silicon dioxide ranges from 1.5 nm to 3.5nm at gate voltage 3V.
•The maximum drain current equals 250µA at 2.5nm gate oxide thickness.
RESULT and
DISCUSSION
• Current-Voltage (Id-Vd) characteristics of CNTFET for different gate voltage values are presented.
• CNT parameters used are diameter equals 1nm, length equals 100nm, and chirality is (13,0).
• The drain current decreases when reducing the gate voltage.
RESULT and
DISCUSSION
The relationship between (Id-Vg) was plotted for different drain voltage values.

The threshold voltage equals 0.436V, the energy band gap equals 0.747eV, and the transconductance
equals 10µA/V at drain voltage 1V
RESULT and
DISCUSSION

Frequency
response of
CNTFETs
Bandwidth is 30 GHz
Resonance Frequency is 50GHz
RESULT and
DISCUSSION

The resistance of the CNT sensor

varies depending on the applied
pressure or strain.

The resistance decreases as the diameter increases,

thus the energy band gap decreases.

The resistance increased linearly with an energy band

gap.
RESULT and
DISCUSSION

The strain utilized to adjust a

CNT's bandgap continually.

The bandgap is critical for CNTs'

use in energy storage and
conversion technologies.
RESULT and
DISCUSSION
The results show that von Mises stress in a SWCNT.

The maximum von Mises stress is 6.51 × N/.

The von Mises stress is in a linear relationship with pressure

 RESULT and
DISCUSSION
The results show that von Mises stress in a 2SWCNT

The von Mises stress increased when

increasing the number of CNTs.

The maximum von Mises stress is 1.66× N/.

RESULT and
DISCUSSION
The maximum von Mises stress for 4SWCNT
was 1.03× while the minimum von Mises
stress was 2.25× N/
RESULT and
DISCUSSION
The presence of multiple layers in MWCNTs increases the complexity of the structure and can lead to stress
concentration at interlayer boundaries, and defects.
RESULT and
DISCUSSION
RESULT and
DISCUSSION

The substrate membrane is deflected when pressure is applied underneath the sensor; this changes the
carbon nanotube's resistance.

The maximum displacement occurs at the center of the substrate (diaphragm); the blue color indicates zero
displacements, while red was the maximum displacement.
RESULT and
DISCUSSION
The current of SWCNTs was equal to 2.8×10-10 at pressure 16MPa, while the current of MWCNTs was equal to
4.2×10-10 at the same pressure.

Pressure can affect the resistance of certain materials, particularly those with strain-sensitive electrical properties.
Increased pressure can decrease the resistance, leading to a higher current if the voltage remains constant.
RESULT and
DISCUSSION
The maximum overshoot was 0.31µm at pressure range of 100 to 250kPa.
The rise time equal 0.18ms at pressure 100kPa, and at pressure 150kP, the rise time equal 0.2ms, while the rising time
equals 0.21ms, 0.23ms at pressure 200kPa, and 250kPa, respectively.
RESULT and
DISCUSSION
The frequency response of the CNT sensor measures
how quickly it can detect and transmit pressure
changes as a function of frequency.
The frequency response of a carbon nanotube (CNT)
pressure sensor can vary depending on its design,
materials, and operating conditions.

The resonance frequency is 60Hz

CONCLUSION
Conclusio
n

This thesis enhanced the design and simulation of the single-walled carbon nanotube field effect transistor
with a back gate using COMSOL Multiphysics 6.0.

The impact of varying silicon dioxide thickness (gate thickness) on the drain current was studied. Then the
Carbon nanotube specification was also examined regarding varying their diameter and length.

In addition, the carbon nanotube specification was also examined regarding varying their diameter and
length.
Future
Work
Future Work
The suggested work for the future includes:

 Fabrication of CNT piezoresistive pressure sensor practically.

 Fabrication of CNT field effect transistor practically.
 Design and simulation CNTs of the digital circuit such as logic gates circuit.
Publicati
on
1- Eisa, Zahraa, and Haider Al-Mumen. "Characteristic control of SWCNT-FET by
varying its chirality and dimensions." Indonesian Journal of Electrical Engineering and
Informatics (IJEEI) 10.3 (2022): 698-706. Scopus-indexed journal.

2-Mohammed, Zahraa Eisa, and Haider Al-Mumen. “High-Performance SWCNT

Pressure Sensor." Journal of University of Babylon for Engineering Sciences 31.6
(2023): 1-12.

3- Eisa, Zahraa, and Haider Al-Mumen. “Toward a Practical CNT pressure sensor“.
Journal of Nanoparticle Research. Accepted paper. Clarivate
indexed journal (impact factor: 2.5)
Scopus-indexed
THANK YOU