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Photoelectrochemical Water Splitting
Photoelectrochemical Water Splitting
• Speed to power is the driver. We seeing long lead time for access to
capacity
• Power availability is a big factor – everybody in the industry is talking
about. On-site power, microgrids…
• Energy issues create investment hot-spots
• More investments in Frankford, Lisbon, Milan, Madrid, Warsaw,…for AI and low latency
Gas-feed fuel cells can bridge the time to interconnection, it has a path to
greener fuel, and can be deployed fast and then movable to new sites.
• Intermittent solar/wind
• Fluctuating demand
Storing electron energy in chemical bonds
• The ‘grey color’ of hydrogen, and
• Fishery
• Costly electric power line to shore (wait, sure?)
The colors of hydrogen
‘C-suit question’: alternatives &
comparison ?
Credit: Linfeng&Fatemeh report for our first ‘Energy Harvesting’ class, 9 Janv, 2024; [data from
Parthasarathy and Narayanan (2014)]. Comment: for the C-suit it would need to be ~2024
As of 2022, commercial electrolysis requires around 53 kWh of electricity to produce one kg of hydrogen, which
holds 39.4 kWh (HHV) of energy @74% https://newatlas.com/energy/hysata-efficient-hydrogen-electrolysis/
So, hydrogen for ‘the rich’ ?
• Can we make hydrogen for ‘the poor’ too?
https://www.universiteitleiden.nl/en/news/2019/05/we-finally-understand-ho
w-oxygen-reacts-on-platinum
https://www.pnas.org/doi/10.1073/pnas.1902846116
A process reversal – forming water w/o energy
• The H & O molecules diffuse towards the
surface and are adsorbed on the surface of
the pieces of platinum.
• The O& H molecules are held on the surface
of the platinum by temporary bonds formed
between these molecules and the platinum
Platinum is a transition metal & it has
vacant d orbitals that help the molecules to
form temporary bonds with it.
• The higher concentration of the molecules
on the surface of the catalyst makes it more
likely that the molecules will collide with
each other.
• This will result in bonds being broken & new
ones formed, i.e. a chemical reaction will
occur to form water molecules on the
surface of the platinum.
• Reaction is helped by the fact that the
covalent bonds holding the atoms together
are weakened by the formation of new
bonds between the reactants and the
surface of the catalyst.
Changing PH (chemists’ way of changing local charge–field)
A calling – for semiconductor engineers?
What can we do to manipulate the local field and charges?
At the molecular scale? Nanoscale?
We do this all the time! And, successfully! Better than anyone else!
• What about #3 ?
• comes just a little too short of > 1.23eV.
Problem with silicon in water splitting
• This is true for 3D silicon bulk. Here are some research questions:
• With quantum confinement the effective Eg’ can be larger, and eV0 too?
• What is the built-in potential of a 1D or 2D silicon nanowire?
• Should the effective bandgap be higher due to quantization of both electrons
and holes?
• What would be the depletion width of a heavily doped 1D, 2D silicon pn
junction?
• we report Si-based PSRs by
synthesizing high-
photovoltage multijunction
Si nanowires (SiNWs)
• tunable photovoltages
exceeding 10 V were
observed under 1 sun
illumination.
• Spatioselective
photoelectrodeposition of
oxygen and hydrogen
evolution co-catalysts
enabled water splitting at
infrared wavelengths up to
approximately 1,050 nm,…
A newly reported solution to the problem: stacking up pn-junctions
Eg Eg + DE
3D (diameter = 150-200nm >> exciton Bohr radius = 4.2nm) 1D (diameter < 4.2nm), Or, 2D
https://doi.org/10.1038/s41586-022-05549-5; Water splitting with silicon p–i–n superlattices suspended in solution, T.S. Teitsworth, et al, 270 | Nature | Vol 614 | 9 February 2023
Work function of elements (eV)
Ag 4.26 – 4.74 Al 4.06 – 4.26 As 3.75
Be 4.98 Bi 4.31 C ~5
Co 5 Cr 4.5 Cs 2.14
https://en.wikipedia.org/wiki/Work_function
Ohmic and Schottky contact to p-type silicon
Ohmic:
• Heavily doped p+ silicon: Simple and low-cost but suffers from higher sheet resistance compared to metal contacts.
• Gold (Au): Often used due to its low work function and ease of processing. However, it requires additional steps for
stability.
• Aluminum (Al 4.2eV): Not ideal for ohmic contact on p-type due to its low work function forming a rectifying
barrier.
• Beryllium (Be) or Nickel (Ni 5.1eV) offer higher work functions for ohmic behavior.
• Silicides: Similar to n-type, TiSi2 and others can be used, but processing temperatures and specific dopants might
differ.
Schottky:
• Aluminum (Al 4.2eV): Forms a Schottky barrier with moderate height, suitable for general-purpose applications.
• Silver (Ag): Lower barrier height compared to Al, suitable for low-power devices with lower forward voltage drop.
Ohmic and Schottky contact to n-type silicon
Ohmic:
• Heavily doped n+ silicon: This is often used for simplicity and low cost, but suffers from higher sheet
resistance compared to metal contacts.
• Aluminum (Al ~4.2eV): Popular due to its low work function and ease of processing. However, it forms a
spiking interface with silicon, requiring additional steps for stability.
• Ti (4.33eV) and TiSi2: A silicide compound offering low resistance and good stability, but requires higher
processing temperatures.
• Other silicides: (Co >4.53eV) CoSi2 and MoSi2 offer alternative options with specific advantages depending
on application.
Schottky:
• Gold (Au 5.1eV): Forms a Schottky barrier with moderate height, often used for general-purpose
applications.
• Platinum (Pt 5.6eV ): Offers higher barrier height and lower leakage current, suitable for low-power
devices.
Issues and flawed hypothesis
• The turn-on voltage of a single pn-junction is low (<1V), which
suggests a low built-in potential, which in turn is consistent to likely
surface Fermi-level pinning.
• If the above is true, then it is hard to imagine a band-to-band
tunneling between n and p. The tunnel diode model explanation
might be misleading, or difficult to stand close scrutiny.