SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

FZT749
TYPICAL CHARACTERISTICS
td
tr

1.8

tf

IB1=IB2=IC/10

ns

ts

1.2
1.0
0.8

0.6

IC/IB=100

140

ns
1200

120

1000

100

COMPLEMENTARY TYPE
PARTMARKING DETAIL

ts

60

40

0.2

200

tr

0.01

0.1

10

FZT649
FZT749

C
B

ABSOLUTE MAXIMUM RATINGS.

td

20

IC/IB=10
0.001

tf

80

600

0.4

VCE=-10V

160

1.4

Switching time

- (Volts)

1.6

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VCE(sat) v IC

Switching Speeds

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-35

Collector-Emitter Voltage

VCEO

-25

Emitter-Base Voltage

VEBO

-5

Peak Pulse Current

ICM

-8

IC

-3

Ptot

-55 to +150

Continuous Collector Current

Power Dissipation

1.2

at Tamb=25C

Tj:Tstg

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

1.0

- (Volts)

VCE=2V

160

120

IC/IB=10

0.8

0.6

- Gain

200

PARAMETER

SYMBOL MIN.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

-35

IC=-100A

V(BR)CEO

-25

IC=-10mA*

V(BR)EBO

-5

IE=-100A

-0.1
-10

A
A

VCB=-30V
VCB=-30V,Tamb=100C

IC/IB=100

80

40

0.001

0.01

0.1

0.4

0.001

10

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

hFE v IC

VBE(sat) v IC

10

I - Collector Current (Amps)

- (Volts)

VCE=2V
0.8

0.6

0.4

0.001

0.01

0.1

1.0

-0.1

VEB=4V

Saturation Voltages

VCE(sat)

-0.12
-0.40

-0.3
-0.6

V
V

IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*

VBE(sat)

-0.9

-1.25

IC=-1A, IB=-100mA*

Base-Emitter
Turn-On Voltage

VBE(on)

-0.8

-1.0

IC=-1A, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

70
100
75
15

200
200
150
50

Transition Frequency

fT

100

160

1s
100ms
10ms
1.0ms

IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*

300
MHz

100

10
0.01

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3 - 233

ICBO

D.C.

0.1

MAX.

Collector Cut-Off
Currents

Single Pulse Test at Tamb=25C

10

TYP.

IEBO

1.2

1.0

FZT749

ISSUE 4 - NOVEMBER 1995

FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).

100

Output Capacitance

Cobo

55

Switching Times

ton

40

100

pF

VCB=-10V f=1MHz

ns

IC=-500mA, VCC=-10V
IB1=IB2=-50mA

toff
450
ns
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 232

IC=-100mA, VCE=-5V
f=100MHz

SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

FZT749
TYPICAL CHARACTERISTICS
td
tr

1.8

tf

IB1=IB2=IC/10

ns

ts

1.2
1.0
0.8

0.6

IC/IB=100

140

ns
1200

120

1000

100

COMPLEMENTARY TYPE
PARTMARKING DETAIL

ts

60

40

0.2

200

tr

0.01

0.1

10

FZT649
FZT749

C
B

ABSOLUTE MAXIMUM RATINGS.

td

20

IC/IB=10
0.001

tf

80

600

0.4

VCE=-10V

160

1.4

Switching time

- (Volts)

1.6

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VCE(sat) v IC

Switching Speeds

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-35

Collector-Emitter Voltage

VCEO

-25

Emitter-Base Voltage

VEBO

-5

Peak Pulse Current

ICM

-8

IC

-3

Ptot

-55 to +150

Continuous Collector Current

Power Dissipation

1.2

at Tamb=25C

Tj:Tstg

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

1.0

- (Volts)

VCE=2V

160

120

IC/IB=10

0.8

0.6

- Gain

200

PARAMETER

SYMBOL MIN.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

-35

IC=-100A

V(BR)CEO

-25

IC=-10mA*

V(BR)EBO

-5

IE=-100A

-0.1
-10

A
A

VCB=-30V
VCB=-30V,Tamb=100C

IC/IB=100

80

40

0.001

0.01

0.1

0.4

0.001

10

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

hFE v IC

VBE(sat) v IC

10

I - Collector Current (Amps)

- (Volts)

VCE=2V
0.8

0.6

0.4

0.001

0.01

0.1

1.0

-0.1

VEB=4V

Saturation Voltages

VCE(sat)

-0.12
-0.40

-0.3
-0.6

V
V

IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*

VBE(sat)

-0.9

-1.25

IC=-1A, IB=-100mA*

Base-Emitter
Turn-On Voltage

VBE(on)

-0.8

-1.0

IC=-1A, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

70
100
75
15

200
200
150
50

Transition Frequency

fT

100

160

1s
100ms
10ms
1.0ms

IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*

300
MHz

100

10
0.01

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3 - 233

ICBO

D.C.

0.1

MAX.

Collector Cut-Off
Currents

Single Pulse Test at Tamb=25C

10

TYP.

IEBO

1.2

1.0

FZT749

ISSUE 4 - NOVEMBER 1995

FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).

100

Output Capacitance

Cobo

55

Switching Times

ton

40

100

pF

VCB=-10V f=1MHz

ns

IC=-500mA, VCC=-10V
IB1=IB2=-50mA

toff
450
ns
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 232

IC=-100mA, VCE=-5V
f=100MHz

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