Reading Li~t

Uti

Helms, H. Operational Amplifiers 1987 Source Book, Englewood Cliffs, NJ:

Prentice Han, Inc., 1987.

DIGITAL CIRCUITS AND DEVICES

CMOS/NMOS Integrated Circuits, RCA Solid Stale. 1980.

DeMassa, T. A.; and Z. Ciccone, Digital Integrated Circuits. New York: John Wiley and Sons, Inc., 1996.

Glasford, G. M. Digital Electronic Circuits. Englewood Cliffs. NJ: Prentice Hall, Inc .. , 1988.

Hauser, J. R., "Noise Margin Criteria for Digital Logic Circuits." IEEE Transactions on Education 36, No.4 (November 1993), pp. 363-68.

Hodges. D. A.; and H. G. Jackson, Analysis and Design of Digital Integrated Circuits. New York: McGraw-Hili Book Co., ! 983 ,

Kang, S-M.: and Y. Leblebici. CMOS Digital In tegra ted Circuits: Analysis and Design. 2nd edt Boston; WCBfMcGraw-Hill, 1999.

Lohstroh, J. "Static and Dynamic Noise Margins of Logic Circuits," IEEE Journal 0/ Solid-State Circuits SC-14. No.3 (June 1979), pp. 591-98.

Mead, C'.; and L. Conway. Introduction 10 VLSI Systems. Reading, MA:

Addison-Wesley Publishing Co., Inc., 1980.

Mukherjee. A. Introduction (0 nMOS and CMOS VLSI Systems Design.

Englewood Cliffs, NJ: Prentice Hall, Inc., 1986.

Prince. B. Semiconductor Memories; A Handbook oj Design, Manufacture and Applications. 2nd edt New York: John Wiley and Sons) lnc., 199L

Wang, N, Digital MOS Integrated Circuits. Englewood Cliffs, NJ: Prentice Hall, lnc., 1989.

Wilson, G. R "Advances ill Bipolar VLSI." Proceedings oj the IEEE 78 .. No. u (November 1990), pp_ .707-19.

SPICE AND PSPIC. REFallNCES

Banzhap, W,. Computet-Aided Circuit Analysis Using PSpke. 2nd ed.

Englewood Cliffs. NJ: Prentice Hall, lnc., 1992.

Brown, W. L; and A. Y. J. Szeto. "Verifying Spice Results with Hand Calculations: Handling Common Discrepanices." IEEE Transactions on Education, 37, No.4 (November 1994), pp, 358--6S.

Goody. R. W. MicroSim PSpiu!or Window-'S; Volume /: DC, AC, and Devices and Circuits, 2nd ed. Upper Saddle River, NJ: Prentice-Hall. Inc., 1998.

Goody. R. W_ Micro$irn PSicefor Windows: Volume Jl .. Operational Amplifiers and Digital Circuits. 2nd ed, Upper Saddle River, NJ: Prentice-Hall, 1998.

Herniter, M. E, Schematic Capture with MicrQSim PSpice. 3rd ed. Upper Saddle River, NJ: Prentice-Han, 1998,

Meares, L G.: and C. E Hymowitz, Simulating willI Spic«. San Pedro, CA:

Intusoft, 1988.

Micro'Sim Stall PSpict' User's Manual Version 4.03, Irvine, CA: MicroSim Corporation, 1990.

Natarajan, S, " A.n Effective Approach. to Obtain Model Parameters for BJTs and FETs from Data Books:' IEEE Transactions on Education 35, No.2 (May \992), pp. 164-69,

1201

Appendix. E

Rashid, M_ R SPJCE for Circuits and Electronics Using PSpice. Englewood Cliffs, NJ: Prentice Hall, Inc., 1990.

Roberts, G. W.; and A" S. Sedra, SPICE/or Microelectronic Circuits. 3rd ed.

New York: Saunders College Publishing, 1992,

Thorpe, T W. Computerized Circuil Analysis with SPICE. New York: John Wiley and Sons, Inc., 1992.

Tuinenga, P. W. SPICE: A Guide to Circuit Simulation and Analysis Using PSpiCl!. 2nd ed, Englewood Cliffs. NJ: Prentice Hall, Inc., 1992.

Chapter 1
1.1 (<-l)
(b)
I.) (a)
(b)
1,6 (<I )
(b)
I.lO (a)
(b) F

Answers to Selected Problems

(i) 1.9 x 109 cm-),

(ii) f:.71 x lOwcm-~

(i) 1.34 x 105 cm ",

(ii) 1.63 x 101 crn "

n-type: n,; = 5 x 1015 cm-3, PI' = 4.5 X W4 cm~3

n-type: no') = 5 X 1015 em":', p,j = 6.48 X 10-4 cm-3

Add donors, Nd = 7 x 1015 em -3, T = 324 K

n -) 3 24 10-5 -~

p,,=IO em ,no=' x em.

,,= n., + fin ~ 1015 ,m-3; p =

p" + ~p = 1.01 x 1017 em-)

L13 For N,,;:;:: W16cm-J and Nil = WI5crn-3, V"i = O.637V; For N« = 1016cm-J and n, = IOI~ em -\ Vb~ == 0.8l7 V

1.17 (a)(" = 8..38 MHZ;

(b) L> 13.2MHz

1.20 (a) 0,430 V~ (b) 0,549 V 1.23 2.83 x 103

1.25 (a) Iv= 0.145 ~A, V D = 0.046 V (b) JD = -30nA, Vb == -1.2V

1.27 VI == 1.81 V

1.29 (a) Jf) = 0.0267 rnA, VD = 0.7 V (b) V Il = 0.45 V, In= 0

1.32 1m = O.6SmA, Ita = L30mA.

RI = 2.3:5kQ

1.35 (a) and (b)vd = l.30mV (peak-to-peak) 1.37 0.599 V; 0.299 V

1.41 (a) V Q = 5.685 V,

(b) b.vo = O.039V, (c) Vo = 5,658 V

1.43 {a) 4.921 V; (b)-O.13V

Chapter 2

2.4 (a) 6,06, (b) 1,58; P1V = 2.S.7V for

(a), PlY = l00.7V lcrtb)

28 R = 1.19 a, 32.25%, 18 W

zu 3.04V

2, l3 (a) l t: = 26.3mA, I{ = 45.0mA, lz = IS.8mA

tb) Rc. = 2kn

(c) RL = 585 {l

2,15 (a) 6.Vo=O.815V, (b) 4.08%. 2.18 Ri = 18,2n, C = ?900I1F

2.21 (a) 110::::: V[ for 0::: VJ 55.7V;

Vo =;15 + 3.42 for 5.7:5 1'1 ::: 15 V

(b) lo = 0 for 0.::: VI ::: 5.7V; . ~ O.6v} - 142 f,

ID - 1 kQ or

5.7 s VJ ::: t5V

2.33 (a) I;;::;: lDI = Ita = 0, Vo= to V (b) '/D1 = 0, I = It» = O.94mA.

Va = I.01V

lID

1204 Appendix F
(C) Iv! = O. T = ltn = 0.44 rnA,
Vo = 5.82 V
(d) J = O.964mA,
lt» = J D1 = 0.482 rnA,
Va = O.842V
2.35 (a) VI = 6.9V, V2 = -0.6 V,
lt» == 1.25mA, 1D2 = 0,
lin =O.9SroA
(b) YI = 4.4V, V2 = -OJ V,
lt» == 0.83JmA,
JD2=O.107mA, Im= 0
(e) V1 = 4.4V, h= -O.6V,
RI = 10 tn, R2 = 5 kn~
RJ = 2.93kO
2.38 (a) Im= 0.86 mA, V 0 = 0;
(b) lo = 0, Vo=-3.S7V
2AO (a) In = O. Vn = -2.5V;
(b) ID = OJ9mA, VD = O.6V
2.43 (a) VOl = V02 = 5V~
(b) VOl = O.6V. VO.2::: 1.2V;
(c) VOl = 0.6 Y, V 02= 1.2 V
2.47 V f'S = 2.6 V
Chspter3 3.1 (a) fJF = 85, ClF = 0.9884, jE = 51 6 j..LA

{b) . PF = 53, aF +O.9~15. le = 2.70 rnA

3.4 Ie""" 1.8SmA. i, = O.0154mA, ;E = L865mA

3. 7 lSI = 1.69 X 10-13 A, ls: = 6.94 X 1O-!5 A, lSI/ lsz = 24.35

3.10 60.6

3.14 RB = l20ka, ICQ = 1.05 rnA.

Rc == 2.38kn

3.16 (a) h=O. Vc=6V,

(b) IE:: O.3mA, Vc = 3 V, (c) IE =1.3mA, Vc = 1.5 V

3.19 VB = U9V, l« = O.49mA 3.22 VE =-O.1V, Ve == 2..84 V

3.25 lei = In = O.5mA, Vel = V Cl = 3 V

3.28 3.97V

3.31 RI = 338 kn, Rz = 58.7 kQ, Rc = 6.49 kQ 3.34 (a) J DO = O.0624mA, ICQ = 4.6& rnA,

V CEQ = 5.22 V,

(b) IBQ = O.0326mA. leo = 4.89mA, VCEQ ::= 4.41 V

3.37 leo = 4.41 rnA, VECQ = 6V. Rc = L26kn 3.40 IcQ= 2.73 rnA, VCEQ = 6 V,

RI = 23.2kn, R2 = 2.83 kQ

3.43 (a) IBO = O.0214mA, ICQ = l.60mA, VlCQ = 15.2 V,

(b) ISQ = O.OI61,mA, h:Q = 1.61mA.

VECQ = 15.1 V

3.46 R£ = 4.90kn, RI = 72.4k!"2,

Rl = 50.9kO, designed using f3 :':::: 00.

3.49 (a) RTH = 6.67 kn. JlTH = L67V; (b) I BQ = 0.593 rnA. ICQ = 3.56 rnA, Vf = 2.76V, Vc = -2.17V

3.52 (a) RrH= 54.7Hl, VrH=-3.03V. (b) ICQ = 0.227 mA, V CEQ = 7.SI V

3.55 Is: = 3.6 rnA, f 82= 0.0444 m A,

In = 3.56 rnA, l s: "'" 0.259 rnA,

I BI = 0.0032 rnA, 1 CI = 0.256 mA

Chapter 4

4.1 (a) gm = 76.9mAfY, f" = 2.34kQ.

r() = 75kQ,

(b) gIM = 19.2 mA/V,rrr = 9.36 kn.

Yo"'" 300 kfl

4.4 41.5:::: gm ~ SO.SmA/V, 1.58::::,,,'::: 2.89Hl

4.7 (a) VB"",-O.0347V,Vf;=-O.735V, (b) Rc =6.43kQ, (c) Av = -B3.7, (d) Av "",,-74.9

4. to (a) leQ = 1.19mA, V ceQ ~ 8.42 V, (b) Av = - 1.94,

(c) 1.76::: lAd::; 2.14

4.13 (a) R£ = ! 1.0 kQ, (b) Rc = 3.11 tQ. (c) Av = -43.9, (d] R, =4.81 to

4.16 (a) 39.0:::: IAvi s: 43.2,

(b) 1.64:s Rj :5 2.13 kO, (c) 3.70::: Ro :::: 3.85 k.n

4.25 3.24 V peak-to-peak 4.28 0.342 rnA peak-to-peak

4.31 t:.ic (peak-to-peak) = 1.29 mA, ~yCE (peak-to-peak) = 2.58V

4.33 (a) fa;} = 2.09 mA, V CEe = 3.69 V, (c) A v ~ O.9~8;

(d) Rib = 122kg~ Ro= 12.2n

4.37 (a) Ico = O.6S0mA. VECQ = 3.01 V, (e) Av=O.977.Ai=4.61.

(d) RiI:~ = 88.2 kn, R, :;;: 38.7Q, (e) 4.21 .s Ai ~ 5.05

4.40 (a) Ve=O.0617V, YE=O.762V; (b)gm = 19 rnA/V. ':r = 4.21 kg, r; = 304kQ;

(c) A. = 0.906,

Ai = 14.8; (d) Av:::::: 0.728, Aj, = 14.8

4.44 (a) leo == l.46mA. VCEQ = 1.75 V; (b) R", = t .93 kQ; (c) A~ = 26.0

4.47 (a) Vc=O.SV, VB = 1.20 V,

Vc = 1.70V,

(b) Av = 9.36, (e) s, = 49.5 Q

4.50 (a) gin) = 42.7mA/V, 'lfl = 2.34kQ:; g",2 = 485 mA/V. Y ... 2 = 2.06kO,

'01 = 702 = 00,

(b) AVI = -85,4. An == -97. (c) Av = 3890

4.53 (a) leI = 12.8 fiA. VCel = 5,11 V, 10 = 1.29,mA, Ven = 5.81 V,

(b) A v = -55.2,

(c) Ris = 74.4 kO. R, = 2.2 to

4.56 (a) PRE = 1.66mW. PRe = 13.0mW.

PQ= 7.0mW,

(b) PRL = 1.44mW

4.59 (a) PRe:: 7.02mW, PQ = 2.65mW,

ues

(b) PRL = O.290mW.

PRe = O.0289mW, Pa = 2.33mW

5.1 (a) 3.06 rnA. {b) 2.81 mA

5.4 W/L ~ 9.375

5.7 r.n J.1m

5.10 (a) V SD(sat) = .I V. ID = 0.12 rnA (b) VSD(sat) = 2 V. ID = O.48mA (c) V SD(sal) = 3 Y, ID = 1.08 rnA

5.13 18lkQ, 63.7kO, lOOV

5.16 1.24 VI/2 -

5.19 VGS' = 2.05 V, ID"=: O,775mA, VDS = 5.35 V

5.22 Vs = 2.21 V. V SD = 5.21 V

5.25 For example, let W IL = 10, then VSG = 4V, Rs = 5kO, RD = 7.5 kO. RI = lOOkQ. R2 = 150kO

5.28 RD = 5 kQ, Rs = 2.36 kQ

5.31 RD = 4kr2. Let W/L = 10, then

Rs= 3.94kr.l

5.34 (W/L) I = 3.23 5.31 20.3

5.40 ID= 0.49mA~ W/L = 0.731

5.43 VDS> VDS(sat) = - Vp, lD = IDSS 5.46 VnD:5 -2.5V~ Vs::: -1.06 V

5.49 V(JsQ = -1.I7V, IDa = 5.S5mA,

VDSQ = 7.13 V

5.52 RD = 0,9 kn, RI = 8.6 Hl, R2 = 91.4kfl

5.55 Rb = L75k!2, fD = loss = 4mA 5.58 128 ~/Vl

Chap""

6.1 (a) 12.5, (b) 2.21 V

6.4. 0.833 rnA

1116

Appendix F

6.6 (a) Ru = 8 kn, W /L = 11.6.

(b) Km = 0.835 mArV, '0 = 133 kQ, (c) -6.3

6.10 2.1 rnA/V

6.13 (b) -2.SS, (c) 2.76 V peak-to-peak 6.16 (a) Rs = 05 l<R, IDe = 1.0 rnA.

(b) -1.33

6.19 K, = O.102mA/V2, VrN = -2.65V, RD = 1.23 k~, Rs = OJOkO,

RI = 529 kQ, R2 = 123 kn

6.23 (No load) AI' = 0.995, RQ = 0.249 kQ;

(With load) All "" 0.905, R; = O.226kfl

6.26 (a) 47.0, (b) l13 rnA

6.30 (a) 100 Q. (b) won

6.33 (a) IIJ(l ~ 0.365 rnA, V DSQ = 4.53 V, (b) g", = 2.09mA/V. '0 = 00,

(c) A I' :;:::: 4.64

b.36 (a) R,'1= 2.26 kO, Rn = 1.07 kn.

(b) Av= 4.74

6.39 0.936 kQ

6,42 (a) 0.731, (b) O.40kQ

6.45 (a) Rl '= 545 kn. R2 = l.50M1t

(b) IDOl = 0.269 rnA, llJQ2 = 0.5 rnA.

VDSQ1 = 4.62 V,

(c) Av = 0.714. R, = 1.25kO

6.48 (a) RI = 38.8kQ. R2 = JSkQ.

R3= 26.2 kn, Rf) = 0.6 kS1, (b) Av 0::: -5.36

Cl.5J (a) [DO = 1.42rnA. VSDQ = 2.9V, (b) Av = 0.844, Ai = 4.l8,

(c) 5.8 V peak-to-peak

c"."teT 7

7.1 (c) IIn(t) = 1 _ e-rIR•C•

7.5 (a) TS '= (Rj + Rp)Cs = 0.4Os1

rp = (RiIIRI')Cl' = 0.375 us (b) it, = 0,398 HZ'/H = 424k:Hz, \Tlmu = 7.SkO:

7.S (a) IAvl = 159~

(b) l"s (open circuit) = 5.31 ms, tj> (short circuit). = 0.332}iS;

(c) Cc = O.932J1F, C L = 553 pF

7.11 (a) 959Hz, (b) IAvl =6.70 7.13 (a) Rs:: 2.59 kQ, RD = 4.41 kQ, (c) 1.89IJf

7.16 (a) IDQ = l.&mAj YSDQ = 5.68 V, gm = 2.68 rnA/V, '0 =00

(b) For Cn. 1'"&1 = 2.28 ms; For Cn. 'tS2 = 51.2ms

(c) en dominates; h~dB = II Hz

7.19 Cc=4561JF

7.22 (a) CE = 57.2 ~F,

(b) [s ~ 199.7 Hz.iA = 0.556 Hz

7.25 C L = J 21 pF

7,31 [r = 511 MHz,ift = 4.26 MHz

7.33 (a) l« = 13.3 MHz, (b) f = 199 MHz 7.37 It = 540Hz'/H = 344kHz

7.41 (a) 's = 198Q, (b) 12%

7.44 (a) en = 2.21 pF, eM = 27.7 pF, (b) I« = 3.06 MHz, Ar = -19.5

7..47 (a) I»= IO.4MHz, (b) eM = i8.2pF, (c) Ar = -4.66

7.50 !PjJ. = 17.9 MHz, ...Iv :;:::: 0.863

ChapterS

8.2 (a) RL = 7.2 n, ED = 1.12kQ, (b) V.p = 26mV

8.5 (b) 9.38,30,39.4,10.8, 1.16W.

(c) YeS

8.9 Tdolv = 136"C, Tease = 101°C; Tsnk = 85°C

8.11 PD = lOW

8.13 {a) iQ = 9.8mA, R = 949 C, if1{max) = 19.6mA,

1~1 (min) = 0, h(max) = 9.8 mA. idmio) = -9,8 mA,

(b) 16.3%

8.16 (a) vo(max) = 8V, h ~ 1.6mA, ~I ~ 10V,

(b) 61.7%

8.19 (a) V8S= 5 V, P = 5mW,

(h) l',,(max) = S V. iL = iDit = 8mA. jop = 0, VI = 95V, PL = 64 mW, PMn = 16mW, PMp = 0

8.21 (a) 200 I,1A/V2

8.24 PL(max.) = 112.SmW. R, = 40AkU.

R2 = 13.3 kfl

8.29 (a) Set. VI' = 0.9 Vee = a Vf', then a = 2.86;

(b) PQ = 4.95W

lU3 R; == 46.4 kQ

Clrspter 9

9.2 (a) A~:;;:;; -10, Ri = 10 U1; (b) A •. ~ -5. R, ~ lOkQ; (c) A.::o:: -20, R; = 5 kO

9.5 R2 = I Mn, R\ = 33.3 kQ

9.1 (a) Vo = -150 sinwt(mV); (b) ts= 10 sin £of (IJA).

it = -37.5 sin wf (IlA) ,

io =-47.5sinwt(~)

9.11 (a) 450 kn. (b) 4.95 Mn 9.15 (a) ~ 1.996 V, (b) +1.996 V 9.19 (a) vo=-2.667V.

(b) YI3 "" O.525V

9.20 RI = 20k!2, Rz :=:: 160kf2, Rf = 80kfl 9.24 (a) RF = 10kO,

(b) Vo = 0.3125 V,4.687SV

927 RI = SkO, Rz = 72kO:

9.31 A~ = 5

9.34 VOl·:=: -vOl = (I + ~~)."VI 9.37 (b) Rs~l.lkQ

9.40 R2 = R) ='l to. Set Rl = RF :::; I kQ: 9.43 v12 = 2..5 V

Answers to Selected Prohlem~

1207

9.47 Rr( = '.52 kn~ Potentiometer ~ 300 kQ 9.50 (a) f =; 3L8Hz~ Phase ='. -90\

(b) f:. J 5.9 Hz, J59 Hz

953 A __ R2. jwRIC1

. (a) \> - Ie?

RI + jwRI I

b Rz J:::: 1

() A). = - -R I • (c)

2rrR1C1

Chapter 10

10.2 In = In = 9621lA. lSI = ls: = 19.2)lA

10.5 'REF:::: 0.54mA. RI = 7.96 kQ

10.7 (a) HI = 9.3 kQ, (b) 10 = 2mA, (c) Rcz:: 4,65 kQ

10.11 ta) l: == I.OrnA, 13 = 1.5 rnA;

(b) t, -;::= 0.25 rnA, 13 = O.75mA~ (c) 11 = O.167mA. Ii= O.333mA

10.14 'REF = 0.500392tnA, RI = 17.J9kn 10.17 IREF = LOOOS3mA~ RL =9.295kQ 1020 (a) 0.466 rnA.. (b) 4OOr.!

10.23 Ro = 12.8 MO:, 0.936%,

10.25 VSEI = 0.68l V, [REF" = 0.482mA, 10 = 8.7 )lA. V BE2 = 0.577 V

10.29 RE2 = 10.17 k~, REJ = 2.44 H2, RI = 18.6 kf.2,

V BE2 = 0.598 V,V BE) == 0.6268 V

10.32 (a) 101 = 4.64mA, lm = 2.32mA, IOJ = 6.96mA,

(b) R(]:::: 2 kn, Ra ::::: 4kO, Ro ~ 1.341Q

10.35 (a) 0.475 S 10 sO.525mA. (b) 0.451::: 10 :::: 0.551 rnA

10.38 (W/Lh = 3.125, (WJL)L "'" 1.25, (W/Lh =0.2

10AI (W/Lh = 20, {W/L)I =: 60, (W/Lh =0.986

10.44 [R.EF =lo=O.74mA, VDS2(sat)::; O.86V 10,47 (a) [REF = 80~A, 10 ~ 80 Il~

(b) From a PSpice analysis,

Afo = O.052IlA

120B

A~d~F

10.50 IREF = 89.5 J,lA, /1 = 17.9)lA,

12 ="l: 1121lA, /J = 71.6 JIA. I .. = 358 pA

to.52 (a) in:::. 2.5 mAo (b) l» :: 3mA, (c) lo = 3.5 rnA

10.56 (a) VsE=0.5208Vt (b) RI = 8.96kO, (c) VI == 4.462V, (d) A" = -1846

10.60 Av= -4447

Chapter 11

lLl (a) R£ ~ 2kO, Rc = 4kQ;

(c) l'CM(max) = 4 VI vCM(ll'rin) = -8 V

11.5 (a) (i) OV, (ii) -0.1 V

(b) (i) 0.768 v. (ii) 0.758 V

] 1.8 (a) RE = 62kQ;

(b) Ad:=: 7] .0. Acm = -0.398, CMM~B;;::45dB

(c) Rid = 70.4 kO,Ricm :::. 6.2SMO

11.18 (a) Rid = 46.8 k,Q.

{b) Ricm= 43.1 MO

11.22 (a) RD = 47.5kn, RI = 13.75kn, IQ = t, = 240pA

(b) 61Q ~ 131lA

11.25 (a) Vd = I V. (b) vd.mllM =- 1.58 V

11.30 vcm(max) = 6 V

11.36. (a) To == 1 rnA, RD = 6k&2, (b) gj(max) == O.2SmA/V. (c) Ad = 1.5

11.41 (a) Ad:::l: 2301, (b) Rr. = JSOkO

11.44 (a) 10 = 2J1A. (h) Ad == 1923, (c) Ad = 641

11.48 (a) V DS3 .::;: VDS'4== 2 V.

VDS1 = VDSl = toy,

(b) Ad = 80, (c) R; = 400 kO

11.56 (a) Ad = 88.9

11.62 Ri 8!! 1.05 Mg, ~ = 0.412 kO.

A~ = -438

11.66 (a) Ret = 80kO, Ra = 20k!2; (b) Ail = -69.6, Ad = -5352

ChspW 12

12.1 (a) 1.249 x 10-2,

(b) -0.016%,79.987,

(c) fJ = 1.15 X 10-2, -1.6%, 78.72

12.4 A = 4999

12.6 (a) fH = 8 kHz, (b) IH = 40kHz

12.8 1000

12.11 (a) R,{max) = io' k!l, Rr{miri) "=' 1 n (b) R,(max) = 10" kQ.

R.,( min) ~ 0.1 Q

12.14 Rif;;l!; SOOMn, ~f = 0.02190 12.18 Rif == 106 kn. R"J = 5.04 MQ ]2.22 (a) lei = In =:: O.SmA,

/CJ .:;: 2mA. Vo = 0;

(b) A~f = 5.68

12.26 Arl = 45.4

12.30 (a) '.1 = 15.8kS2. gml = 7.62mAjV, r 11'2 = 2.28 kO. gml = 52.7 rnA/V

(b) Ai( = 8.63; (c) Rif= 45.1 Q

12.34 A!f = 5.33

12.38 Av: 98.06mAfV 12.41 (a) A, = -3.41,

(b) Aif = -85.0VjmA. (c) Rif = 14.9 kn,

(d) R"J = 4.88kO

12.45 RF = 27.2 kO 12.49 T = 84.45

12.51 (a) /180 ~ 1.05 x 104 Hz, (b) fJ = 4.42 x ]0-4

12.55 (c) For P = 0.005, system is stable.

Phase margin = 14"j

For fj = 0.05. system is unstable.

12.60 fJ = 0.01.428

12.65 /PD = 555Hz

Chapttr 13

13.5 56.4V

13.9 Ie2 ~ 1O.28].lA, IC9 = I7J3JlA. 1119 = 1.713~, 194 =0.9345~. lC4 = 9.34511A

13.12 I C14= 21.8 mAo I C1S ::: 0.071 mA 13.14 RI ~ 30,32kO, R2 = 33.96kQ 13.18 Rid:o:; 2.095MO

13.22 (a) hEF::: IQ= 197 = 89.2)JA.

(b) Ad::l' 141. Av2 = 141, A~ = 19,881

13.26 Ro = 1.26MfJ

13.38 - t 5 ~VCM s ll.6 V

13.41 Ad -;:;:. W.38.IA,11 == 1911, IAI = 19,895

13.43 IDSS;:: 0.8 mA

Chttpter14

14.1 (a) A CL = -4.52, Rij = 90.8 Q (b) ACL:;; -4.92, Rif = 98.9!l (c) Act. = -4.965, Rif = 99.811

14..5 (a) A ... ~ I. (b) Rof::=: 0.0211

14.8 (a) Rif == 99. H~, (b) Rof = 18.4n.

(c) An = 0.65, (0) 0.65

14.11 f3-dB ~ 40Hz, IT = 2MHz 14.14 fmu..::=: 159kHz

14.18 6.37V

14.22 103 s

14.26 iCI/iC2= 1.0155

14.31 (a) VOl = V02 = 0.5 V. VOl = -0.3 V, (b) RA = 8.33kfl, RB = lOkO,

(c) VOl = \'02 = O.l V, VQl = -0.14 V

14.34 (a) Rz = 22.48 MO, (b) Rl == 6kn 14.37 For (a) '-0 = 9 mV,

for (b) Vo = -1.0SB V

14.40 (a) Circuit a: VQ = 0, Circuit b; Va = -0.975 V

Answers 10 Sel«ted Problems

(b) Circuit a: Vo = -O.OIOV. Circuit b: Vo =-1.18V

(c) Circuit a: IB ~ Vo = 0, los -+ l'Q = O.0125V

Circuit b: lB~ ~o = -1.365 V,

los """"0 = -1.62 V

14.42 CMR~B = 37.5 dB

C/uIptfN 15 15.6 N ~ 5

15.10 (b) \A.llJllix = 28.3,f<? = S.305kHz.

II ::: 5.315kHz,h '= 5.296kHz

15.13 (b) R2 = 524kQ, C, = O.0732J.lF.
C2 = 66.3pF
15.15 (a) lOMO. (b) IMQ, (c) 333 kr!
15.18 (a) r = 60 ps, (b) ~vo ;::: O.167V,
(c) N=78 15.21 R ~ 8.12kO, R2 = 236kn I

15.25 (a) /0 = 2rr..jRARBCACB'

(b) R3 = RA+ CB

R, Rs c.

1 CI+C~ C1 .

15.29 10 = 2Jr C)C2L ' C2 = g".RL

15.34 VREF = -5Vt RF = lOkO.

RVAR = 40kO

15.36 (a) VTH=2V,V1L=-2V

15.40 (b) R2 = 190knt V REF = 1.579V 15.42 (a) R2 ~ 12.6kQ, (b) .R = 3.02 kg 15.47 (b) Duty cycle = SO%tfo = 257 Hz 15.52 T = 3.80 ms, recovery time ~ 2 ms 15.56 627 Hz s f :5 4.81 tHz.

52.2 ~ de. :5 66.71%

15.60 ~~ == 14, ~ = IS, Bias voltage = :1::12 V.lp::::: lA,

Peak output voltage =±:lOV

1210

Appesdix F

ChaptffN 16

16.1 (a) VS8 = 1 V::::} ll'vTN:: O.3I5V,

VSB = 2V::::} .6.VTN = 0.544 V

(b) 10 = 0.578, 0.384, 0.267 rnA

16.5 Vii;:;:; 4.(i7 V, VOr = 2.67 V, Vo = 1.09 V

16.8 5,79

16.11 VrNJ_ = -2 . .88 V

16.14 (a) (i) 0, (ii) 1.16mW: (b) (i) O. (ii) 825 JlW; (c) {i) 0, (ii) 200 I1W

16.17 (a) (I) 4.2V, (ii) 3.4V

16.20 (a) 1.82~

(b] (W{L)L = 0.444. (W /L)D = 0.808; (c) 0.0369V

16.24 ( B· C) + A

16.28 (a) Vir = 2.5 V. VON! = L7V.

Vop,= 3.3 V;

(c) 4.64 V, 0.356 V

16.33 (a) 144.5~A, (b) 99AJ.LA

16.37 V1L = 4.125 V, VOHU = 9,125 V.

Vjl/ = 5.81SV, Vow = 0.875 V NML =3.25V, NMfI = 125V

16.39 (a) 2j V, (b) (~) = 4.S( ~) ,

(c) L65V " P

16.43 (A OR 8) AND C

16.46 (b) v02;::(~AORvB)ANDvc 16.50 6.25ms

16.55 Exclusive-Ok function 15.67 (a) (Wit) = 0.329;

(b) 32.SmA.65.6mW

17,1 (a) iE=0.56mA, VOl = 3.5V.

VQ2 = 2.38 V

(b) ts = O.76mA. VOl = 3.5 V

(e) For VOl = 2.38Vj Rei = 1,47kQ

17.4 Rs = 2.8 kQ, R£ "'" 2.1 kQ, R2 = 2.1 kg, R) = 0.5 tn, RJ = 1.1 k11,

~ =O.767kQ,

R("2 = 1 kQ, Rn = 0.808 kQ

17.8 (a) AND logic function;

(b) Logic 0 = OV, Logic I = 1.8 V; (c) iEI = 1.65 rnA, jc~ = 0,

i("2 = in = 3 rnA, V2 = 0

(f) iEI = 0.962 rnA, in = O.

io = iE2 = 2.25 rnA, V1 = 1.8 V

17.10 (a) Logic I = +O.2V, Logic 0 ;:;:: -0.2 V, (b) R£ = 3 kfl, (c) R[ = 1 kn.

(d) ill:2 = 0.4 rnA. iD2 = 0.4.67 rnA.

(e) 1O.98mW

17.13 (a) Logic 1 =OV, Logic 0 = -O.4V, (b) ~'Ol: A + B, V02 : C + D,

VOl; (A + B)· (C + D)

17.15 (a) (i) vi=0.8V,it=O.525mA, iJ = i4 = 0, Vo = 5 V

(ii) vi = 2.2 V, il = 0.35 rnA,

ls = 2.04mA. i4 = 0.297 rnA (b) 7, (c) 5

17 .18 (a) (i) ;1 ~ 0.683 rnA.

tn = i2 = 14 zz: 1B3 = iJ = 0, (ii) '1 = tm = 0.45mA,

;2 = 2.05 rnA, ;4 = 0.533 rnA. ;,3 = 1.97 rnA, h = 2.23 rnA

17.22 (a) 1BI = 1.05 rnA, other currents = 0, (b) i81 = 0.926 rnA, !B2 = 1.59 rnA, in = 2,05 rnA,

ill) ;:;:: 2.64 rnA. lcs = 7,29 rnA

l7.26 (a) VBI = I.) V, ;SI ~ l.39mA.

V82 = 0.8 V, iB4 = O,0394mA., 1('4 = LI8mA. VB4 = 4.97 V, all other currents = 0

(b) vBI = l.7V. VB2 = IAV, l-Iao=O.7V. ra = 1.1 V

;BI = 1.18mA, i82 = 1.42 rnA, ;84= 0.00369 mAo

io = 5.13mA, iBO = 6.55mA

17.29 (a) hi = O.097SmA, P = 0.4875 mW~ (b) P = L98mW;

(c) is," ~ 18mA

N

D

E

A

aceqsavaent circuits, 31-35, 317-3Ig; See

(JJs() Analog cil"\:uit.

for bipolar linear amplifiers., 166--110 sin usoida] analysis ill, 31-34 small-signal, 35

ec load Lille analysis, 2OJ.- 20 5

ma~imllm symmemcal swing. 203-2;05 Acceptor impurily, 7-8

Actrve filters, 923-937

sctive network de-s.ign, 924-925 applicanons aAd design of, 924-937 general two-pole active filter, 926 higher-order Butterwertb filters, 931-933 switched-capacitor filter,91J-937 two-pole,926

two-pole high-pass n.ullerw(Orlh fil~, 929-93L

two-pole low· pass Butterworth filler, 92/-919

Active load, three-lransistor. ff)l

Active load circuits, small-signal analysis of, 61~25

Active load devices, 612 Active loads

biasing and, 577 -iiJ8 .

diff-amp frequency response with, 704-705 differential amplifiers with, 674-68$

AClive netwo;k design, !n4-925 Active region. 99

Address decoders, 1077-1079 Admittanee. l5

Advanced common-emster amplifier concepts, 199-200

Advanced MOSFET active load cireuils,

smafl-signal anaLysis of, 623.-.625 Advanced Schottky TTL circuits. 1155-1157 Alex.alldel. C. K, 1199

Allen, P. E., l200

Alltml!.tiva: EeL gales. 1128-1131 Amplif.caIIoR factor, 130 Amplifier cireuus

BiCMOS operational, 848-856 bipolar operational, S20-821 CMOS op«ational. 839-84S differential, 1114-1 U6

JFET operationa], 858-8S9

Amplifier circuits--Conl. operational. s 17-869

Amplille.- frequency response, JII4-381t

eq ui va lent circui IS, 384--385

frequency response analysis, JIU ... 386 Amplifier function of transistors, 134-137 Amplifier stages, in BiCMOS circuits, ~88

Amplifien, 134-137; See also Op-amps bask configurations, I ~ 5, 18&-1 S9 BJT. I 63-242

BJT d~tTerenlial parr, ~63 classes of, 48(1-494

com moa-emiuer, 495-49(t C'.;Immoll·source.324334 current, 755-7{\2 difference, 543-541

di fferemial, 639:-72 5

differential with active load, 674-6S5 eminer-Ioitower, 497-499

FET, ~13-381

FET diCferential pair; 663-614 high-frequency, 44S-4S0 inductively coupled, 494-495 instrumentatioa. 547-550 inverting, :526-534

linear, 163 ... 18S

MOSFET. )13-323 multistage, 639- 72S noninverting, 536--539 operational, 521-575, tl17-869 power, 469-471), 912-977 Q.point, 1)4, B9.144

single· stage integrated circuit MOSfET,

:\45-355

small-signal MDSFET, 2&7 source-follower, 334- J41 Slimming, 534-536 uaneconductance, 762-·7158 transresistance, 768-778 voltage, 749-7)5

AnaloJl c1~uit$. 164; See ai;o ac analysis Analog electrol1ics.. ~19-999

Amillo8 signals, and linear lUT amplifiers. 163-164-

Analysis; See also ac load line anal)'s.li;. de analysis.; GraphiCal aauys4; Mullistagc

analysis _

of amplifier frequeDC)' ~nse,38S--3g6 of opentioni.l amplifiers. ~2S-526

.:,'

;',

, .

_ ..

... ~ ,. .'

~:: ..' ~.-:-~~>,

~~~:~:!i:n';-::

1211

UI!

AND function, 81 Anti log amplifier, 53 5 Applications

<If bipolar juocti<)D transistors, 131-137 of inlegrat~ circuits, 923--999 MOSFET,2&3-287

nonlilnear, 553-55S

op-amp, 5)9;..S5S

Applied gale vollage, 248-149-

A rchit«1ure. or memories, 1016-1677 A rse.tilc, 7

Aspect ratios, 599

Astable rnultiviblat(lr, 961,969-911 Atoms, donor, 8

Attenuation, B8

Allilanche breakdown, 20

B

B-C junction. See Base-collector junction B·E! juncnon, See Base-eminer junction Band-fttiet;t fiher.925

Bandpp energy,.'i

Bandgap material, 3&

Bandpass filter, 925

Band~dth, 39$-396

finite. 872 filII-power, 891

Bandwidth exleruion, 734-135; S~ also

UllitY-gaIn bandwidth Banzhap, W., 1201 Ban.:hllusen criterion, 9-:\8 Barna, A., 1100

Rase, 98

8ase-callo;tor junction, 99

Base ~lIrrent, io npn transistor, 101-102 ~itlel' junctioll. 99

Berlin,l{.~., 1200

Beta cutoff frequeftC1, 419

Sias circuit, in 741 op-amp, 824-826

81as combinalioDS of npn transister, 99 Bias C1IITelt Q)mpensation, 907-909

Bias curren.l effects, 9Q6..907 Bias-independent CUII'¢n! SOUf<:e, 607-60S Bias su bility, 142

v<thage divider biaing and, 140-145-

'Rllhing, 517-638

bipolar transistor, 138-147 claS$-AB, SOI-504 conssant-current .SOUI'O:, :.181-283 d:iode, 499-SOI

BiOd OS druit$, 686-MO, 11 ~7-J I 59 buic amplifier stqes in. 6U-688 ClItmu ~ for, 6B8

BiCMOS circuit$-Cont. diff~renlial amplifier. 68&--MO Inverter, L 157-1158

logic, 1158-1159

BiCMOS operational amplifier circuits, ~56

BiCMOS folded cascode op-arnp, 849-851) CA::lI4(l BieM OS ~i rcuII description. 8:+-8S2

CAJl4(l de analysis, g52-853

CA314(1 small-signal analysis, S54-S56 Bipolar amplifiers

at: Load line analysis, 200-20S time-varyillg signals of, 167, 1@ Bipolar circuits. inverter, 133 Bipolar digi tal circl,ltts, 1113-1171 liCMOS, 1157-1159

etruuer-coupled logic (Eel), 1113--1125 modified ECL circuit configurations.

1125-1135

Schottky transistor-transistor logic, JL49-1I51

transister-transistor logic, J 13 5-1 1.9

Bipolar junction transistors (BJTs) amplifier. 134-13 '1

breakdown voltage, 111-112

de anal:ysls, 113-131

description, 97-98

digitall()gk, BJ-I34 iaverse-active mode, 121 saturation mode, 119

switeh. I 31- I3J

Bipolar linear amplifier5, 165-185

e~panded ilybrid-JI; equivalent Circuit, 180 graphical analysis and ac equivalent circuit, 166-17Q

hybrid-I! equivalent cilWit, including the early effect, 176-179

other SJU.1I·~ignal parameters aad equivalent cirtuib, .18Q-..ISj small-signal hybrid-1I' equivaleot circuit. 170-176

Bipolar operational arnplifttr circuits,

820--&3~

de anal)Sii of. 82J.--gJQ described. g20-82J

freqseney response in, 83S-839 smal!-siglal analysis of, 830-837

Bipolar transistor bia.sins, 138--141 conSlan!-cW'rcnt source biasma, 144--147 integrated circillt bliSin.g:. 14$-147 siagle-base resistor biasiIlJ, t38-14<I voltage dividel bia:s.in! ud bias stability,

1400-145

Bipolar transistor current sources, 571-598 improved circuits for, 581-5&9 multitransistor current micron for. 595-59S

two-transislOr, S78-5&l

Widlar, 589-m

Bipolar transisror inverter circuit, 165 Bipolar transistors, 416-426 cutoff'frequeacy in, 420-422

expanded hybrid- It equivalent circuits in, 41~18

improved current 5OUn;c circuits, SS4--S87 Miner effect and Miller capacitance In, 422--426

short-circuit cl,lHent gain til, 418-420 small-signal bybrid-It equivalent circuits of, J"JIJ--J76

Bsta ble multivibraior, 9S! BIT amplifiers, 163--242

ac load liDe analysis of, 200-2(15 analog signal. and linear amplifiers,

16-3-164

basic configurations, 185, 188-189 bipolar linear, 1~5-185 collector-emiuer voltage, 169-171l common-base. 214--218

commo n-collector (ernitter-f ollower),

205-214 ccmmen-emitter, 189~2fI() multistage, 219-226

power considerations, 226--22g

summary and comparison of Ihr«: basic, 21&-219

BIT circu its

de anal~i$ of, 113-131 ml,l[li~age, 147-150

symbols and conventions {OI, IOS-to7 BfT dlIT-amps, with active load, 674-616 BIT differential pair ampliflcrs, 640-663 common-mode rejection ratio, 6S7---tiS9

de transfer characteristics, 64348 diff<:~ntial- and common-mode gains,

6S3-656

differential- and common-mode input impedances, 659-663

~mall-signal equivalent circuit analysts, 648-4)53

\enni.bolog)l and qualitative description, M0--64J

BIT Hartley oscillator, 9-46

BIT operational amplifier circuli. simplified. 695---699

IIIT POW<:1 traesistors, 4 71}--4 H

BJTs (b~polar junction transistors), 97~161 applications of, 131-117

basics of,97-113

current-voltage characierisucs £If. 107-110 nonideal transistor lea~llge currents and

breakdown voltage for, 111)-1 U DpD transistor, 99-104

pnp transistor, 104- L05

StruClUres of, 98.-99

ll-oQc, H. W., 1200 Bode plots

or one-, t wo-.,and ,h.r«:-poIe amplifien, 185-789'

Index.

1213

Bode plQ1s-COIIt.

of $)'stenJ tnHl~fer functions, 388-39.

Body effect

modeling in MOSfET !lI1lpliikrs, 322-323 in MOSFETs, 2ro-261

in NMOS inverters, 1024-1026 Body-effect parameter. 2611 Boltzmann's constant, 6, 13 &nd, P. R., I 199

Boron, doping with, 7 Breakdown effect

avalanche. 20

in MOSFETs, 261-262 second breakd()wn,412

Breakdown voltage, 20-21

for bipolar junction transistOR, I LO-I LJ common-base cbaracteristics, It 1-111 common-emitter ch.aracteristics, 112-113 mechanism ill power BITs, 412

reverse bills VOhije and. 113, '15

Breakpoint rrc:quency. 390 Bridge circuit design, 560-562 Brid8e power amplifier, m Bridle rectifier, S4--SS

Brown, W. L., 1201

Buffer tramislQrs, 538

input, :504-:507

BUill-in potential barrier, 13 Bums. s G.. 1199 Butterworth filters, 927-933

dcfineil, 927 higher-order, 931-'933

Bypass capacitors: See ako Coupling and bypass capacitors

source, 311-334

in transistor amplitie-rs with circuit capaci tors, 41 (1-414

Bypass zesistors, common-erniuer amplifier circuits with, 196-] 98

c

CA3140 BiCMOS operational amplifi~r de analysis of, 852-$5} descn'bW.850-852

srnall:signal analysis of, S54-3S6 Capacitance

junction, I:S

overlap. 427

Capacitors coupling I 38

emitter bypass, 1 %--198 source bypau., 331-334 standard values, 1196-1197 switched. 9l4-935

tl14

Indu

Carbon resistor values. standard, ll95 Carpenter. G. L,II99

Carrjers, excess, 1 I I 2

CM(;3.lIe current SOIUU. 588

Cascode circuit mirror. 603-605

Csscode circuits, hi~·frequeoc)' response ill, 436-444

Caseode configuration, In rnuhistage BJT amplifiers. UJ- 22'

DSC'Ode current-mirror, CMOS opetational

amplifier circuit, f:4 7---&4.8

Cascode op-amp, BieMOS folded. ~49-8511 Ceramic-disk capacitors, 1191

Cbatlllel length modulation, 259-260 Channel region. of MOSFETs.. 246

Charge separation, 13

Chip select signals. Hn7

Ciccone. Z,. 120 I

CircULI biasing, See Inlegrated circuit biasing Circeit ~()nfiguflltiom •. E.eL, l t 25-11 JS Circuit description. 1116

Circuit design- See Design

Circuit element matching, 81 ~"'320 Circuit gain, small-signal, lSI

Circ IIi L IcH .. d line, 26

Orcuit symbols .. nd convennons

for bipolar junction transisio rs, I ~5'-I07 for MOSFETs_ 253-258

Circuits; Ser abo Digilal circuits, Logil;

circuits

with acnve load s. 611-618 bias stable. ].$·2

BiCMOS. 686-690. MlJ_.·::I56 bipolar .820--839. I It )-lI11 brid~ rectifier, 54-55

with bypass resistor, 1%-198 cascaded. 21<1

damper. ]2-75

clipper, 6%- 12

CMOS. 839--848

common. bipolar, 111- 131 common-emitter. ~ 14--111 ditldo>, 49--95

With eminer bypass capacitor. 196---l98 With emitter resistor, In-195 hiJ,h-pass network, 390

in tegra led. 577-638. 923-9'l9

JFET operauonat amplifier. I15-6---t!So;l low-pass net work , J91

MOSFET digital, IOO}-1111 operational amplifier. @5-699. 817-869 rectifier. )0-64

reference, 64-61

Thevenin equivalent, 141

two-diode, 76- 77

Clamper circuits. 11- J5 &hOI.tlty. 1149-1151

Class-A power amplifiers. 4,4----(99 inducti~ly ooupied.494-495 operation. of, ~1--484

Class-A power amplifiet&-~COllt. rransformer-cou pled common-emitter am5-"lifien. 495 ....... 96

tr aasformer-cou pled emitter- Follower amplifiers. 497--499

CI~ss-AB output stage

with diode biasing, 499-501

with input butTer transistors. 504-507 utilizing the Darlington co-nfig~radion.

:S«1~5()8

CLiI~~·AB PCw.";1 amplifier.

biasing uSbng the VIIii' multiplier. 501-504 opera lion of, 4894~3

Class-B po-wer amplifiers, operation of. • 4&4481)

Class-C p<}1,lIer amplifiers. operation of. 493--494

eli pper cireu i IS, 68---72 parallel-based, 69

Closed-loop f requency response. 1\1:\ S - 837 frequency compensation and, 197··798

Closed-loop gain ideal. 130-732

inverting amplifier, 8 75-878 noninverting amplifier, 81R--879

Closed-loop input resistance inverting amplifier, 879 ,881 noninvcrring amplifier, 88 1-8~3 Closed-loop IrOU\~fe~ f\l,l\,!.liM, 7)0 Closed-loop voltage gam, 525 r.:~back amplifier. 740

CMOS (complementary MOS) inverter, 10)4---1048

currents. 1042-1043

voltage transfer curve, 1037-1041 CMOS full-adder circuit. 1014--l07S CMOS Iogk circuits, l04g~I055

basic CMOS NOR and NAND gales.

1[)48-1052

basic logic gates, 1048~I052 clocked. 1055-)(158 complex, 1052-1054

fa1'lout and propagation dtll'l}' lime in. 1054--1055

CMOS operarional ampliner circuits, 839-l(4~ cascode current-mnror, 847-~48 current-mirror, &46--847

folded cascode, 843-846

MC14571 S4()..g4)

CMOS pass networks, 1067

CMOS SRAM cds. ~08~-1085

CMOS trallsmission gate, 106S-1()(i7 CMRR, Set' Commofl--mode rejection ratio Colclaser, R_ A .. 1199'

Collector, 1)'8

Colle>Cwr current, 142

and Early veltage, 116-177 maximum rated, 411

in npn transistor, 101

Collector-emuter voltage BIT amplifier,

169-110

Colplus oscillator, 945-946 Common-anode display. 83 Common-base amplifiers

inputartd Olltput impedance of. 216--218 small-signal voltage and curreet gains, in, 214-216

Common-base cheracieristics of breakdown l'ollage.111-112

Common-base circuit configuration, ISS for bipolar junction transistors, 107 Common-base circuits. bigh-frequeocy response in. 436-444

Common-base current gain, 101 Common bipolar circuits. de analysis of, 121, I:! I

Common -colleetot (e!llit ter-follower)

amp lifters, 205-214

Input and OUIPl!t impedance of. 207-209 small·siglla I curren I gain in, J09- 214 small-signal vohagc gain in. 205--207

Common-collect Or (emitter- follower) coafigu I'd tion, 1135 Common-drain circuit. 334

C ommon-emi Iter amplifiers, 189-200 advanced coaceprs, 199--200

bask circuit, 11)1)-192

circuit With c("tIjplini capacuor. i9Q-.191 circuit wilh emitter bypass capacitor,

196-191

with emjuer-bypass resistor, 196--198 with emitter resistor, 192-l9S

inp\otl and Q\JlpUI impedance, 199-

tra n sformer-cou pled. 495--496

Common-emitter characteristics of breakdown voltage. 112-113 Common-erniuer circuits

dcanaiysis of. I 14-l!7 high-frequency response in, 433-436 Common-ermuer curte1'l1 confijuration. 102-,10)_ 185

Common equivalent circuit model. h·p3rnme!ers. 18()-183 Common-gate cllcuilS. high-frequency response in, 436-444

Common-gate configuration, J41-J44 illPut and .;lulPUl impedance. 343-J44 small-signal voltage and current gains. 341-:'o4J

Common-mode gail'lS. for BJT dilfertnli:.r.1 pair amplifiers, ,653-656 Common-mode input impedance

lor BJT differential pair amplifiers, 6,'i~3

{If FET differential pair ~mplifiers. 668-669 Commo n -mode input reSlslaMe. Mt l-ti63 Comrnon-rnode input &,gnal, 546

dill-amp frequency rsponse due to. 100-71))

Inde~

IllS

Common-mode input voltage, 640 CommO~-O'l04~ rejection ratio (CMRR), S46 in 8JT diff(!Tential pair amplifiers, 6S7-fi59

in operational amplifier circuits, 9-11

Common-source amphfiers, 324-334 basic, 324-329

with source bypass capa¢i!or, 331-334 with source resister, 329-33 1

Common-source circuits

h~ ~- frequet1Cy resoonse ill ... 33-4J6

in MOSFET de circuit analysis, 263-266 Comparator cjrcuus, in H5 moaolithic integrated circuit timer, 96$-912 Comparator Schmitt Irigg<rr cireuih, ~-951 COl1'1pe05<lti;)[1

inpul bias current. 901-909 offset-voltage. IJ{) 1-9OIi

Compensation capacitor, 79~ Complementary metal-oxide semiconductor.

See CMOS

Complementary MOSF'ETs. 257-258 Composite transconductance, 6S7 Compster <tnmysis. 30-31

IJf loop gain, 781-784

Computer simulation. J(i...31~ Set' also PSpice me with feedback. 729

Concentrations, minority carrier. 21

{" onduetaece

dffusion, 33

small-signal diode incremental, H Conduction parameter, 251-252 and temperature, 262 Conducuvuy. S. 10 Constant-current source, 101 biasing, 2gl-2~3

C 0 nve [SHm efficiency, of power amplifiers. 482. 486-48~

Conversion roctOI"S, 1173

Converters

current-to-voltage, 539--540 voltage-to -current, 540--543 Conway. L lIDI

Corner frequeocy, 3~ Coughlin, R_ F.. L200

Coaphng and bypass capacitors. combined effects in transistor amplifiers. 414-416 Coupling capacitor tffccb, in transistor arnpl itiers. 39%-40 S

Coupling capacitors. 138

in common-emitter amplifier, 190-191 ell r rent-vohage analysi.s, ~99--400 i'npul. 398-40 I

output. 401--4<14

tirne-coastant t«:lInique, 400-401 ill transistor amplifiers. 407-410

Covalent bond. b1-~akLllg, II Covajenr bonds, 4

Crossever distonion, 485--486 Crystal oscillator. 947

1216

Current, 3

TCfc~ current, 14S reverse-bias, 21 Currenl analysis, 3J-..34

Current channel, pillChoif, 289-290 CUITeIl( density

drift, 10 total.ll

Current effects, bias, 906-907 Current gain, 786

ID. commoll-base amplifiers, 2L4--216

in COliimoa-«l'!lcclm (emittfr-follower} amplifiers, 2(9-214

in comm01l-ga!.e conJiguratlon, 141-343 Current mirrors, 578

cascode, 6OJ.-«IS

CMOS operational arnplifier cif'..'Uit,

8#--&47 multitrans.lslol, 595-S98 wide-swing. 6()6-.6()7 WjJ.wn,60~

Cur:relt relationships, t03

bipolar transistor circuits, 579-580, 590

Current (ShWlt-~ri~) amplifiers.. 755-162 discrete circuit representation. 158-162 op-tm]! cin::uil representation, 155-751 simple discre«: circuirrepresernauon,

751-7S8

Current SOll.rte., lhm:-trin~~t1Jr,~S4-:;S6 CUrrent sources

basic three-transistor, S84--~96

basic two-transistor MOSFET,.59~) bias-independent, 601-6l8

~or BiCMOS circuits, (i88

cascade, 588

FET, 5~8-611

JFET, 6IJ9.-ti 11

Illulti-MOSFET circuits for, 603....fi07 Wilson, 581-588

Current.to-V\)ltage converter, 5:W-S40 ClJrrent·volUIJe anatY$l$, clt'CIlitS with couplin. capacitors, 399---400

Cunen I-voltagec:haracterutlg

of bipolar 'uli.Ctioo uaasistors, 107-110 ideal; 17-18

ideal MOSFET, !48-253 JFET,292-295

~f JFETs, 292-295 nonideal. i59---162

of SchQttky diode, 31 Cumnt·voltaae properties, nonlinear, ) Curreut-voitqe: relationship, ideal, 31-33

Currents

CMOS (complementary MOS) inverter, 1042-1043

diffu:>i(ln, ~ 11

leataa:e, 110-113

Cllt-in voltap:, 27

CUtolf, 103

Cutoff frequency bo::tiL,419

in bipolar tral1$1SCOB, 420-422

D

D tlip·flop, Hm-1013

Darlington pair configuration, 691)-691 dUo-AB outp~t stage utilizing, S01~568 gain stage, 695

multitransistor, 221

Data sheets, manufacturers', 184-181, 1183--1193

de analysis

of biw!ar j unction transistor circuits, In-Ill

Mpolar j uectien transistors, Ill-Ill

of bipolar operational amplifier circuits. 821-810

of BJT active load circuits, 612-614

of CA3140 BiCMOS operational amplifier,

852-853

of CMOS lnvener, 1036-1043 commoa-emiuer circuit, 113-U 7

of common JfET configurati(llls> 29S-3l)1 ofcommo .. MOSFET cenfiguratiens,

269-281

of diode circuits, 23-3 I

of MC!4573 CMOS operauonal amplifier circuil.84O-«1

of MOSF£T active load circans, (i16-{il8 of multistage FET amplifiers, 356-359

de isolation, 190

dc quantities, h)6

de transfer cilaucteristics

forBJT dllTerential pair ampli~rs, 643-648

of FET differential pair amplifiers,

663-668

Dead band, 485

Decade frequency, 189

Decoders. See Add~ decoders Delay time, propagation, 1054-1055,

1134-1135 DeMiSSa, T, A., 1201 Depletion-load

NMOS amplifie:r with, 350-351 NMOS inverter with, 1015-1018 Depletion-load device, 276-279 Depletion·load inVll'fter, 1012-J024 Depletion mode, 253

DtpletioJl mode MOSFET, 2S3-1SS DepIetlOll regiOll, 13

Daensitirity factor< 713

Design

active IKlwork, 924-n5

bridge circuit, 560--562 Qrhi~-frequ.ency amplifiers, 44HSO of int¢iflIi ted circuils, 92:J..-m op-amp circuits, SSS-S62, 811-820 I1:rercllC( voltage souIU!:, S 58-560 nmming op-amp cil'Cllit, SS>-SS8

Dif'femlcc amplifier de$ip, 560-562 DdTerence amplifiers. S4J-547 DifTemltiai amplifier eireeits, 1114-1116 [ijfTerential amplifier frequency response,

699-705-

with active load, 704-10S

de to common-mode: input signal. 700-703·

due to dlffereAtial.mode input signal. {i99-700

with emiuer-degeneranon resistors, 703-704

OJ fl'eren tial amplifier with active load, 674-685

BJT diff-amp with active load, 674-676 MOSFET ciff-amp with active load, 679-683

MOSFET <iift'-amp with caseode active load, 683--685

small-signal analysis of BJT active load, 676-fJ79

Differential amplifiers (dilT amps), 63~72S basic 6j9-640

basi, BJT d ifferential pair, 640-663 basic FET differential pair. 663-<i74 BiCMOS circuits, 6&6-691} described, 640

differential amplifier wjlll acuve load, 67~5

gain stage and simple O~lput Sll~, 690-695

sim]i.lifitd BIT operauonal amplifier circuft, 695-6~9

DilTerential gain, 522

Differmti~l-rnode gains, 647

(or BIT dilTerentialpair Implifim., 6:S3-6j6

Differential-mod~ input impedances for BIT dilfereo tialpair amplifiers. 65H03

or FET differenlial pair unplifie.rs,668-669 Differential-mode input resistance, 545, 639-660

Differential-mode input signal, diiT • amp

fm]uency response due to, 699--100 Differential-mode input voltage, 640 Differentiarors, 550-553

Diffusion. 9

DilTu~on capacaance, )4- Diifusion conductance, 33 DilTusion Cl.lrretlt$, \1-11

in semicoMuctor mal.erials, 9-11

1117

DiffwioR resistance, 33. 170 reverse- biased, 180

Digita I circuits

BiCMOS, 1157-1159- bipolar, 1113-1171 MOSFET.1003-1I11 shift registers, 11)63~ 11)70

Digital electronics, 1001-1171 Digital Equipn'lCnt Company, 1002 DigitallQiic

applications, 1] 3-134 MOSFET gates, 285-286 Diode breakdown, 20-21

Diode ~ircuiu .. 49-95; Sfe Q/~Q de alUl!lysis;

Semiconductor diodes

at equi .... alent. 31-j~

cireui t analysis, 33-34

dipper and damper. 68-75 current-voltage relatioesbips, 31-33 de aaalysis and models of. 23-31 nample, 1~

. ffequen~y response. )it LED, 83-85 multiple-diode,75-82 photodiode, 82-8~ rectifier, 5-0-64

small-sil:naJ incrememal eonductioe and resistance, )3

zener diode. ~6

Diode current, in rectifier drcuits, 56-63 Diode logic -circuits, 80-82

multiple, 7 s---g(I

Diode-transistor logic (DTI..) gale, 1136-IU8

Diode types. 35-40

light-emitting diodc~, )6-37 photodiodes, 36

Diodes

biasing, 49~~ I

nonlinear current-voltage properties of, 3- IllectWise linear model of. 3

pn junction, 3, 18-23

SchoUky barrier diode$.H-39 solal cells, 35-36

:zt:ner diodes, 39-40

Direct baad;pp matcrUli, 36· Discrete eircuit representation (If ':lItffiH ampliftrn, 757-762

of transconductance amplifiers.. 764-768 of tm.n~re&i&tance amplmers, 770-778

or vi)ltige .amplifiers, 752-7S5

Discrete semconductor devices, 2 Dissipation. See Power dissipation Distortion. See Nonlinear distortion

DMOS (double-dilTlised MOS) process, 476 Dominant pole, 414, 795

Donor atcms, 8

[lQnorimpl,lrity, 1

Donor impurity doping, 10 Dciped semiconductors, 8, 12

illS

Index

Doping, 1

donor impurity. 10 selective, 10

Drain current, and temperature, 262 Drain terminal, of MOSfET, 246- Drift, 9

in semiconductor materials, 9-1 I Dn 1'1 currents, I)....! I

Drift velocity, 9

Driscoll, E F .. 1200

Driver transistor, 273

Duty cycle, 962

Oynamk: RAM (DRAM) memory cells, 1081-11189

Dynamic shift registers, 10068-1070

E

Early. J. M., 109

Early effect. 109. 58~. 648

ill bipolar linear amplifiers. 176-17't EeL. See Emitter-coupled Il)gil:

EEPROM cehs, 10%-1&93 Efficieocy levels, 2

of power conversion. 482. 48tr-488 Eleclric mid, 9

Electriea 1 engineers, 2

Electri(al vehicle$. motor control uni1 for, 2 Electron concentration, 8, 'iI

Electron CIIntnt, in semiconductors, 7 Electron-hole recombination, 11 ElectrQn inversion layer. 245

Electron mobility. 10

Electronic devices, fabrical~ng.. 4 E~\r(lnics

analog.. 519-999 career ill, 2 digital,IOOI-1171

EI~trons

linfl and diffllSiQII of. 9-11 excess, II

Ekmenl matching, 819-820 Emitter, 98

Emiltu bypass capacstor, 1%-19& Emiuer.bypass tesistor, common-eminer

amplifier circuits vrilh, 196-198

Emitter-coupled logic (ECL~. L I 13-1125- allernati'le EC L gates, 1l2S-1l)J

basic Eel logic gate. 1116-1120 circuit oonfigIJtatioos. 1125-1 I 15- differelltia~ amplifi!:f circuit, 1114-1116 EeL logic cir.:uit charaetensucs,

1120-1124

with. emiUer followcn, 117-11]9 fll.lloui in, 11 21-1 L 23

low-power EeL, 112S-1121

Emiuer-coupled logic(EC l.)--C on I. negative supply voltage, 1121-1124 power dissipation ill, 1120-1121 propagation delay lime in, 1121.

1134-113S

reference circuit for. 1119-112'0 series ga ling. 1131-1134

voltage transfer characteristics. 1124-1125 Emitter current, in npn transistors, 100 Emllte r-degenera lion resisters, dill-amp fr«juency response with, 703--104

Emilter'-foUower amplifiers; See abo Common-ccllector amillifien:

tran sfcrmer-cou pled, 497-4W Emuter-foaower circuits, high-frequency

response in. 444--44l! .

Emiuer-fonower output. sjrnpl~, 69(1-.991 Emitter resistor

circuits with, In-I?::>

common-emitter amptifier circuits with, 192-195

Enhancement load

NMOS amplifter with. J45-349 NMOS inverter with. lOIO-IOB Enhancement load devices. 271-21"3.

345-349

Enhancement-load iavener, 102-0-1 022 Enh,mcement mode, 246 Enhan«:mrnl'm~ MQSFETs, n-channel,

246-248

EPROM cells, 1090-1093 Equilibrium pn Junction, 11-14 EqUivalent circuits, 169-170

amplifier frequency response of. )8~3SS for bipolar linear amplifiers, IM-H5 two-port, 189-

Examplediode CLTCUiIS. 75-80 Excess carrier Hfeli me. II

Excess ca rners, in S(1JI icond ucior materials.

11-11

Excess electrons, 1 I Excess holes, II

Expanded hybrid-It equivalent circuits for bipolar lin~r amplifiers. 180

in biPQlar transistors, 416--41& Exponencial arnphfiers, 555

Extrinsic semiconductors, 7-9:

F

Fairchild Semiconductor. 521 Fsnoat

CMOS. 1054-1055

in emitter-coupled logic, 1121-1123 NMos. 1033-1034

ITL. 1143-1149

Feedback, 121-1116; See a15(J Stllbmly balldwidth extension. 734-7)5 baste concepts. 729'- 738

dosed-loop voltage gain amphfic'rs, 74(1 current (sbonr-series) arnplifiers, 7S}-1()2 frequency compensanon, 795-800 . gain sensinvity, 732-7H

ideal closed-loop gain. 730-712 ideal topologies fOJ, 738-149 imrod«etion 10, 727-729

loop gain. 178-7&4

negative. 525. 728·729

noise sensitivity, 735-'117

lind osei lla tors. 931

positive. 728

reduction or nwline;lr di~toJlion in, 71& stability or Ihe reedbllck circuit, 784-794 transconduet anee (Sf: ries-series) ampl i ikr.>.

162-768

transresistance (shunt-shum) amplitlers. 76K-718

use of computer simutalion. 729

voltage (serie~-shu"') amplift«s, 749-7$5 Feedback resistor, 523

Feed back transfer [u nction, 730 FET amplifiers. 313 381

basic configurations. 323-324 basic WET, 362-368

corn mon- gale con~gula non, 341-344 common-source, 324--))4

MOSFET, JLk~2J

mulhsta&e. 155- 362

single-stage integrated circuit MOSFET.

J45-J55 seurcc-follower, 334-341

s~mmary and comparison of three basic configurations, 345

FET current SOUTCCS, 598-611

basic two-transistor MOSFET, S98-6Q3 bias-independent. 607-60S

JFET, 609--ti11

JIIUItI' MOSFET. 603--.607 FETdiITeJenlial pair amplifiers, 66.3-974 de I ra nsler cheracterisncs ot; 663---M8 differemial- and cotnmon-tnode input impedances. 668,,·669

JFET,672·-674

small-~itnal equiva.lent drcujt analysis of,

669-612

FETs, See Field·elTet:1 transistors F~~ effect. defined. 244

Field-effect transistors, 9'3,243-311,426-433 basic MOSFET applM:ation5. 283-287 frequency response in, 426-433 high-frequency equivalent circuit in.

42&-428

junction field-effecttransstor, 287-301 Miller effect altd Miller capacitance ill, 4)1-433

MOO field-efi(':(;1 Iramla1an, 2.0--262

Index

1.219-

Field-effect transistors=-C OIl'.

MOSFET de circuit analysis, 262-283 unity.gain balldwldth of. 428-430 Field clide. 246

filter capscno r. ~ 7

Filters

active, 924-937 Butterw(lrtb.917-933 maximally flat magnaude, 927 In recnfier orcui Is, 56-63 switched-capacuor, 933--93'

Finite bandwidth. 872

Finih! gain.. effect on itH'erting amplifiers. 532-5l4

Fimte opes-loop gain, 532.875-885 inverting amplifier dosed-loop gain, 375-&78

inverting amplifier closed-loop L .. pUI resistance, 879-Sg I

noninverting amplifier closed-loop gain. 818-819

mmillvcni:ng amplifier closed- loop inllllt resista nee, 881-8~3

nonzero OUlpU1 resistance, 833-~S5 First-order functions, syslem transfer, 383 555 monolithic integrated Circuit timer, 965-972:

Hip-flops

D. H172-I-Dn R·S, 1070--1072

F old back ~ haracteri stic, 98.5 Folded cascode op-amp BiCMOS, 849 ·850 ('MOS. B4J-·846

Forwaro-acl-ive mode opersuon collector currents in, 108, 115 of npn transistors, 99-104-

of pnp transistors, 1~11):S

forwa£d hi,lS, 16 Forward-bias vokage, 21

F orwa rd- biased pn junction. ] 6--11 F orward diode resistance, 27

Foer-pole low-pass Bu1ierworlh filter. 933 Frequency

corner freq uency, 390 decade Jrequency, 3S~ lower cutoff rreqllency, 415 ocra ve f11:quency, J8')1

3 dB frequency. 390

Frequency analysrs, short-circuit lind open, circuu lime ronnilllts, 394-398 Frequency compensation. 795-800

basic I heory of. '](J5-197

and closed-loop ffeqllency response. 797-798

Mill~r. 79:8-.800

Frequency response, ]4, 3&3--467,885-8'2 . .:unpliller. 384- JS6

in bipolar operational ampli6er circulu. 83S...g39

1m

Imiex

Frequency response-ConI. bipolar transistor. 416-426 closed-Loop, ·791-798 complex frequencies. l86 diff-.amp, 6~j05

in FET~ 426-433

gaio·bandwidth product, 881-8~8 bigh-frequency response of transistor

cirQIilS,433-45O

open-loop and closed-loop frequency

response, &85-881

ill operationallUllpLifier circuits, 885-892 s!t-w rate, 88W92

and sySIem transfer fu.nctions,386-- 398 in transistor ampliflers wifh circuit

capacitors, 398""*16 Frequmcy-sek-ctive network, 931 Full..adder circuil, CMOS, '074-1075 Full-power bandwidth {FPBW), 89 L Full-wave rectification, 53--~ Fuactions, system transfer, 386-398

G

Gain! See aUll Cumnl gain; Finite gain;

Unity-pin bandwidth; Voltage lrun dosed-loop, 815-879

commoe-bese current, It I common-mode, 6S3-6~ difl"trential-mode, 651-656

finite open-loop, 532, 815-88S aiverter, 10 13

mlall-signaL circuitvl 81

small-signal voltage, 1 n

Gain-l:J.andwidth product, 416

Irequency response, &87-f!88 Gain marams, phase and, 793--194 Gain l.ensitivity, 732-733

ChiD stage, 690-69$

DarliDilolI "air lind simple emiuerfollower output, 69l>-69L

input impedance, voltage gain, and OlllPllt impedance, (i91-69S

in 141 op-amp, 822,826-8)8. 833-835 Omnium alKnide, 291

Oaltium arsenide, 4> 83

Gallium anemde phosphide, ~3- Gmte terminaL, 244-245

Gates; See tJJso Series pting

digital, 28S-2B6, 1028-1034, W48-1052 diode-transisior, 1 U6-H3t

EeL, 1116-1120, L 128-1131

MOSFET, lI!"";W; tnmsmission,IIlSS-I067

Galllli. M. s, 119t GeiFr, R. L, 1200

Oennanium atoms, 4. 2(1 Glasfosd, G. M •• 1201 Goody, R- W, 120 I Graeme.1. G., l200 Graphical analysis

or bipolar Ilnear amplifiers. 166-170 or diode circuits, 24-2~

of MOSFET ampl:ifiers, 314-318 Gray, P_ R« llOO

Graybel, A., 1199'

Ournm, L., 520

H

h·pilramet~rs, small-signal equivalent circuit,

18Q-.-183

Half-wave recnfication, 50-53 Hambley, A. R., 1199- Harmonic di~tortion, total, 47:0 Hardey oscillator, 15. 946 Hauser, J. R., 1201

Hawkins, C. F., 1199

Hayt, W. H., Jr., 1199-1200 Heat sinks, 477-480

for po,""er transistors, 477-480 Helms.. R. 1201

Herniter, M. E., 1201

High conceeiraucn region, 10 High-fre<[I.LeJlCy eq_uivalmt circuits, 385

in FETs, 426-428 High-frequellg' response

common-base, oommon-gate, and caseode circuils, 436-444

eoramon-emiuer and common-source circuits, 433-436

emitter- and source-follower ci~uits, 444-448

In high-frequency amplifier d~gn, 448-450 of trllons.istor dr.::lIits, 433-450

.High-pass Blltterworfb filter, IW<l-pole,

929--93L

High-pass filter, 914

Higb-pass network, 39~ Higher-oo:Jer~lltterw(lrth filters, 931-9)3 HilbUJIl, J. L., 1200

Hill, W., 1199

Hoberg, D. R., 1200

Hodges, D. 1\., 1201

Hole ccncentrauoe, 8, II)

Helle drii\ velocity, 14}

Hole inwrslon la.}'I:f, 244>

Ho~ mooili,y, 10

Holes

defmed,S excess, lJ

Horensctin. M. N., II~

Horowi rz, p" 1199 Huelsman. L P_, 1200 Hybrid FET op-amp

Lfl55 series, 858-859 LHOO22142/52 series, 857-858

Hybrid-It eqeivalent circuits

fur bipolar linear amphfiers. [76-1,/'9 ex~nded, 416-418

small-signal, 170-176

liymowilz, c. E., L2i)1

I

res See IftleJlrated circuits ldesl closed -leop gam, 130-731

Ideal current-voltage relationship, in pn J unctions, 17-1 ~

Ideal diode, 23

Ideal feedbad topclogies, 738-749 series-series configuralioll, 746--141 series-shunt configuration. 139-142 shunt-series cooJJ:suratioll. '43-146 shunt-shue: C(lI"IfigiJratioll, 741~748

Idell operational amplifiers, 511~S7S; SeE also Nonidea.1 effects 1ft operational amplifier circuits

i averting amplifiers, ~26-514 noninverlillg amplifiers, S36-S3~ op-smp applications, SJ'-SH op-amp Circuit design, 555-S62 operational amplii1ers, 521-526 summing am~lifiers, 534--536

Id~1 parameters for operational amplifiers, 512-525

developing. S~J-:S25

Ideal ~oltagereference circuil, in zener cliO« circui IS; 64--<)7

Impedance, input and i)utput. 207-209,

216--218, .339--341, 343-:144 Impedano:e Iransf"~r, 209, S3S Impurity atoms, S

Indirect lJandga-p material. 36 InductiV('i}, coupled amplifiers, clus-A,

494-49'5

Input and output voltage limitations, 812 op-amp parameters, 873-815

Inpu! bias current. sn, 906-909 corapensanon, 901-909

effects, 1}06-~7

Input buffer transistors, S04--S07

lOpOlI butTer lransjston, clasJ.AB output stage with, S()4.-507

lnput diiT-amp, in 141 op-amp, ~20-822 Input impedance, 524,691--695; flu also Output resistaece

of common-base ampli6ets, 216-21&

Index

uu

Input impoedallce--COIIJ.

of common-collector (emitter-follower)

amplitiers.201-209

of commoll-erniltl;:.!" ampJitiers.. 199

of common-gate ronfiguraticn, 343-344 common-mode,6S9--663, 66a--669 diffesemia l.mode, 659-663

of source- rnllower amplil1en, 339-- 341 Input offset 'Current. 901

tempera; ure coefficient of. 910

input (tfT~1 voltage, 872

Input resista nee. 872

closed-loop, 8J9-883

defined, 528 small-signal, 181

Illp.l t signal

common-mode, 700-,03 differentia l-mode, 699-1(10

Input stage, in 741 (Jp"amp,824-826, B31_g3~

Inpul terminal

inverting, 522

oonillverting. S23

Input rraesistot of TIL. 1138-1141

Input voltage limitaliom, op-amp paramelels'

for. 81). .... &75

Ins!antantOu5 values, tetal, 166 Insirumentalion amplifier, 5'41-550 Insulators,S

11'I1~!rat~ circuit biasing, 145--141, ~77--6J8 Integrated circuit jXlWQ amplifiers. 972-971

bridge power ampli6«. 977 LMJ86 power ampliier. 972-975 PAll power amplifier, 975J)7?

I ntegra ted circuits; S.,(! Ills" Ana log ci rcwi IS:

Digita Icil'(1.li Is

active liltels, 924-931

active loads in. 5"~38

appbcanons and design of, 923 .... 99] integrated cimrit power amplifie:rs, 912-971 noffiinll$Oidal oscillators and timing

circuits, 960-912

number of I't!sislors. 147 operational amplifier. 521-S21 !)scillalars, 937-947

Schmitt trigger circuss, 1M 1-960 \lQlIagC' regulatcrs, 918-9S6

lmegrators, 550-553 In!erdigitaled 5uur;lure, 474 Intrinsic carrier semicoodllCtors. 6 Inuiruk- ~mico!"ldlJCtors., 4-7

Inverse-acti \It mode, transistor circuits, 121 I nvenit)n carrier mobility. and temperature,

262

Inverter Cir...::UIL 13~ Inverter ,ail1. 1(1) Inverters

BiC~~. IJS1-IJS~ CMOS, '034-1048

NMOS, 2&3-234, 1003--1028

un

Inverting amp6l1ets, 526-534 basic.S21-SJO

closed-loop gain. 875--811:: closed-loop inplll resistance, 879-88"1 effect offini!e gain 011. 532-534

with a Tmetwork. 5:m-532

Inverting inp .. ' terminal. 521 Inverting Schmitt trigger, 951-953 Inverting slimming amplifier, 515 Irwi!!.l. D, 1200

Iteration techniques, of diode circuits, 24-26

J

Jackson, H. G.. 120 I Jaeger: R. C, 1199

JFET amplifiers. 362-36$ differential,672-674

small·signalanalysis of. 364--368 small.signal equivalent circuli for, )52-364

JFET configurations, de analysis or, 295-301 JFET ~\errent sources, 609--.i\ II

JFET operational amplifier circuits, 85trS59 hybridFET op-amp, LFIS5 series, &5&--35!1

hybrid FET op-amp, LHOO22/42j52 series, &57--358

JFETs UullCti(on field-effect transsstorsj,

281-34!

common configurations. 295-3{ll current-voltage characteristics, 292-295 pa JfET and MESFET operation.

288-292

Johns, O. A., 1100 Johnson, D. E" 1200 Johnson. J. R_, 1200 Junction ca paei ta [ICC, I 5

Junction field-effect transistors, See JFETs J unction transistors, bipolar. 9'7- 161

K

Kalg. S.M., 1201 Kcmmerly.J. E., 1200 Khietk theory. 11)

Kirchhotrs current/voillge Iaws, 25, 28-29, 12, 10),. 117-119, l41. 145. 167, 182. 215.217,263.2&7,604,611,692.771, &SO

L

Laker, K, 1'1._, \2\10

Leakage C\JrreJ1I~. nonideal transistcr, 110-113

Leblebiei, Y _. 1201

LED~ (lighl·emiHlng diodes], J6---37

circuits using, 83-85

LFI55 series FET op-amps, 858-859 LHOO21/42; 52 series FET op-amps, 1:157-858 Liferime, of excess carrier. II

Liglll-emiuing diodes See LEOs

Limiters, 6S: See also Clipper circuits

Schmitt triggers with, 959-%0

Lint: load. concept for half-wave rectification. $1-51

Line regulation, 978

Linea r amplifiers, 16J-1 &5 bipolar, 165-185

LiMar circuit, 168

Linear models of diode circuits, piecewise,

21-30

linear ramp generator. 972

[M~RO power amplifier. 971-915 load capacitor effects, i" transistor

amplifiers. 4(J5-410 Load devices, active, 611

load lines. 26~ See also Active loads; Deplelion-Ioad; PMOS load

in ac analysis, 200-205

in de analysis of bipolar jundion transistor circuils.117-121

in dc circuit analysis of MQSFETs. 267...:26&

for MOSFET amplifiers. 314-3l8 toad regulation, 979

in voaage regulators, 978-980 Log amplifier, 554-555

Logic. emjuer-coupled, 1113~ 1125 Logic circa i IS

BiCMOS, 1158--i159 CMOS. 1048,·1055 diode. 80.-82 ECL,mO-ll24 family of, IDI3 NMOS, 1028-1034 seq uentiat, 106].-1075

Logic fu netic as, 8(1 Lope gates

CMOS, \048-1~51 diode-transistor. 1136-1 138 EeL, 1116--1120

MOSFET digital. 285-286

Lohsiroh.L, 1201

Long channel effects. 1007 Loop pin, 130, i7t; -784

basic approach 10. 778-781 computer analysis of. 781-784

Low-frequency equivalent circuits. 385 Lo~-PJ~~ 9ul~erVl(lrih tilt~r. \wo-pole.

9271;119

Low-pass fillers. 924 Low-pass network, 392 Low-power EeL II IS-II2X

Lo ..... -power -Schonky TTL circuits, 1153-11 S5 Lower comer frequency, 395

Lower cutoff frequency, 415

M

MajorilY carrier, 9, 2R8 Marik. N. R.. 11'il9

Manufacturers' data sheets, 184-·110.

II1'l·119:,\ Marlin, K .• I!()()

Matching circurt elemen[s. ~ 19-R20 M~lerilils. Se« Semiconductor materials and

individua! .1·{·mi("lmd"c'or maler;ah Maum_ R .. 1199

Mai\im~ll~ ~ flill IlIU grJllUde t\ Iter. 921 Maximum rated eollecter current, 47l Maximum rated power. 471

Ma1!.jrnum symmetrical swing, in <I';: load Lint ~n:lly,i~. 20J.20~

Me L4~7:' CMOS operational amplifier dr~1II1. K4(}-·!\4~

de analysis. K4(J .. -M1

small-signal analysis. of. 341·84) M('~d. C. 120 I

Meares. L G.. I WI

Memory

address decoders in, 1071 1079 architecture of. 1076 1017 classifications of. I1l7S-ID76 RAM.I079IDI\9

rea d-o Illy. I O!!9 109--' MESt't:To..28S 292

n-channel enhancement mode. 292 Metal-oxide semiconductor. See MOS Metal-oxide semicondeetor fieid-dTeo:l

transistors, See MOSFETs Metallurgica] junction, 12 Meyer, R. G. 1200

MicroSlrn Corporauon, 1175, 124}1 Mldb.nd frequency range. 385, 3~5-3% Miller capacitance, 442, 785

in hlp-olilr transisjors, 4J2-426 in FETs. 431-4:H

M~ler compensaiion. 798-'BOO Miller effect

ill nipnl.,r Iral!SiSlOrs. 42::-426 m ~ETs, ~31 4))

Millman. 1.. IIIN

Minurity earner, 9

lID

Minori\y carrier ecncentrations, 21 MiI'lt'ON. Sre Cerrent msrors Milchell. F H .. Jr .. 1199

Milchell. F H .. Sr .. 1 L99

Models of diode circuits

computer simulation and analysis of, 30-31 iteration and graphical analysis techniques, 24-26

piecewise linear. 21-30 purpose of. 23

Moues of operation

ilrld ac ~ I"liilys.i$ of bip<}I<Il' ~ \lOCI ion transistor circuits, 117-121

in MOSFET de circuit analysis, 261-268 Modifiro totem-pole output stage, 11"1-1149 Modified Wi Iron current source. 606

M onosiable multivibrator, ~hll·9M. %8-969 MOS ~u"p>!cilor.144-:!45

MOS structures, physics of, 244-246 MOSFET active load circuit. small-signal

,-,,,,,r~>I~ of, 621·623 MOSFET amplifiers. 31.> ·123

graphical analysis. load lines, and small-

signal parameters for. 314-J18 modeling bod ~ effect ! n, 322- 3 ~ 3 single-stage integrated circun, 3,*5·:\55 small-signal equivalent circuit. JI B-:Q2

MOSFET applications; 21:1J.-2S7 digital logic gate. 285--28(, NMOS inverter. 283-284 small-signal amplifiers; 237

MOSFET circuits. output resistance. 541J..-6OO

MOS~'ET Colpitis oscijlaror. '45-946 MOSFET de circuit analysis, 162-23~

{If common configur~til)ll~, 269~2g1 common-source circuit, 263-266 consrant-current source biasing. 281-2SJ load .line andmodes of operation. 267-268

MOSFET diff-amps

with active load, 679-li:-!1

with cascode active load. 683-685

MOSFET digital circuits, IOOJ-Ilil docked CMOS logic crrcoits, 11)5S·I058 CMOS inverter, I034·IMS

CMOS logic circuits, 104~IOS5 memories, I O,5-I07~

NMOS inverters, 1003-1028

NMOS logic circuits, 1028-L034

RAM memory cells. I079-1{l89 read-only memory. 108~ 1093

seqaensia l logic circeits, 10li7-I075 transmission 3-<'les. 1058-1 ()',7

MQSFEr power transistors. 474-477 MDSFEI structures, 253-258

MOSFETs (metal-oxide semiconductor field-

erred transistors), 243-262 body effect, 200-261

breakdown effects. 26]-262 cascode current mirror. 6I)3-6CS

1114

Index

MOSfETs-COIli.

eircuii symbols. aDd convemions for,

253--258

circuit-voltage rela tionships, 263-264 tomplernenta 1)', 257 - 25&

ideal current-voltage characterisucs of,

24S-2S3

n-channet depletion mode, 2S~255 n-ehannel mban.::em~nt-mOOe, 2~24S IlQnideal carrent-vohage characteristics of,

259-262

?,o;:lIanncl, 255-257,1035-1036 subthreshold wnduo;lion, 251 summary of operation (Jr, 258 temperature etfeets, 262

two-terminal MOS stn,JCture, 244-2~ Wilwn,!modilled WiLWR current sources,

60~6 Motoeola, Inc., 2 Mukherjee, A_, ]201

Ml.lh ... MOSFET current-source circuits, OO:HOi

Mlllttple-diode circuit, example, 7S--.BO MlI.ltiple-d~ ~t.:uits" 75-82

diode J.ogi~ cirwi~ SQ-..,82

elample diode circuits, 15-&0

Mtdtistac.e amplifiers., Darlington pair, 222 MultistaJe analysis, of m~ltista~ BJT amplifiers,119-223

Multinagc BJT amplifiers, 219---:116 cascode configurition, 223-226 multisia~ analysis, 219-223

using blpolarjunction transistors, 147-1 SO MLiltistage FET alllplillers, 355-362

de analysis of, )56-.lS?

small-signal analysis. 360--362 MultitransisLOr current mirrors, for- bipolar

transistor current sources, 59.5-59& Multivibrators, 923

monouable. 96~%S

N

n-chaneel depletion mode of MOSFETs,

l:;3-25S

n-channel ertltancemeftl load derices, 345--349 n-channel enhaecemeet modt MESFETs, 292 n-channel enhancement mode MOSFEIs,

250

n-clJan~l MOSFET amplifier, 320 n-channel MOSFETs, 246-248, 1004-100'7 n-type srnricond.:tl)c$, 7, 9

subsuate for. 246 NAND cirtuit

Schouky TIL, 11 S2~ II S) TTL. 1141-1143

NAND gates

CMos, 1048-1051 NMOS, I021!-IOJ2 Natarajaa, S., 1201

National Semiconductor data sneels, 185-187, 1183--1193

Ncamen, D. k, 1199-1200 Near-avalanche breakdown in MOSfET s, 262

Negative feedback, 52~, 728

advantages aed disadvantages of, 728-729 Negative supply voltage, 1123-1124 Network design, active, 924-~25

Neudcck. G. W., 1199

Nilsson, J. W., 1200

NMOS amplifi~

with depletion load. 356--352 with eahaacement load. 345-349 with PMOS load. 353--355

NMOS inverters, 283-284. 1003-1028 'oody effect, 1£l14--\1}26

witfl depletion load, 1015-1018, 1022-1024 witt! en hancement load, 1010-10 IS,

1020-1022

n-channel MOSFET, 1004-1007 noise margin, 1019-1024

with resistor ~oad. LOO8--LOIO transfer characteristics of, IOO7-HH 8 transient lnalysis of, 1026-1028

NMOS loti' circuits. [{US-ION fanout in, HH3-IOJ4

NMOS NOR and NAND gates in,

1028-1012

NMOS m-ehannel MOSFET) transistors, 248 NMOS pass networks, 1062-100

NMOS SRAM cells, I079-IG81

NMOS transmission gate, IM8-1M2

Noise, defined, 73j

Noist margin

in CMOS inverters, 1045--'1048 NMOS inverter, 1019'-1020

ill NMOS inverters, 1019-1024 Noise ten.sili'lity; 735-131

Nonldeal corre~t-voll.aJe characterisuos, for MOSFET!,2S'9-262

Nonideal effects ill operationalamplifier

circuits. 8i I-nl

additional nonideal effects, 909-911 finite Open-IMP gain, 875-885 fnquency response, 885-892

input bil.$ current, 906-909 on$etvohage, 892-906

practical op-amp parameters, 8'71-815 Nonideal transistor leak. curre .. u, for bipolar junction I~tors., 11G-113

Noninvertilll amplifiers, B.6-539 bas ic, 536-5)7

closed-loop pin in, 87S-879 clo&ed·loop inPllt mistancc ii, sa 1 ~g3 Voltage follower ror, S37-H9

Noninverting ilLput terminal 523 NoniDYerting Schmitt trigcf. 9~SS Non!inc[tr circuit applkaliom, 55J-S5S Nonlinear current-voltage properties, Q'

diodes, 3

Nonlif1elJr dislo.rli .. m, redUcifig. 738 Nonsaturauon region, 249-251,264 Nonsinusoidal oseilla Ion

applk.ations and desigll Qf, 900-972 555 circuit, 96S-971

mODOSlab1c muJtivibralOr. 96J-%5 Schmitt trigter, % L-~3

NOMen) output re~i$tanc:c:, ~83-885 NOR runction, 133, IfJ48.-WS2 NOR gales

CMOS, 100-1052 NMOS, Im3-I032 Northrop, R. It" 1200 npn traasistors CUcuJIS}'JJ1 bols, 1 Q6,

currents, 99--102 defined,'J8

forward-active mlJd~ operation, 99-104 in open-base configuration, III

Null (echnique. 821 Nyquist diagram. 7i9-791

Nyquist stability criterioa, 199;--7~3

o

Octave frequency. ]8!) OIT~t-nuJl temina.ls, 90 1-906 Offset "",luge, 892-906

compensation for, 901-906

input SliLgC tffects of, 893-901 temperature coefficient of, &40, !jIG

Ohm.iI: contact, 3S Ohm's law, 10

On resistance, 476

One-pole amplifiel'$, Bode plot ()f,785-189 One-shot, %3

One-sided output, 64a

Op-amp applieations, SJ9-S5S

cllrrmt-to-voll1lse converter, S)9-S<IO ditTeren~amplifiel, 543--54' instramentalion Imptifier, 547-550 intellatOt and dirfeI'C:Qtialor. SSO--5S3 n911linear circuit aPfllicaliom., SH--SS5 VOlcage·19-c\U'~t ~, S4Q-S43

Op-amp cirwil design, S55-S61, 817-8lQ circuit elemenlmalchina, 819-810 ditTereD£\! ampJilier and bridge cittllit

design. 5ih-562

general ph.i.lo9q)hy of, 818-819

fcfe~~ \lfJhlge IIOIUOC d.c$ign, 5'8-5(10 slhUIinz; op-.atrlp mwit deaip. S5S--SSS

Index

Op-amp circuu representation or current ampl~fiers, 755-751

of rraoscondectance .ampJi6ers, 762-761 or t ransresistanee aruplifiers, 168-770 or voltage amplifiers, U9--15~

Ot-am~ circuits, 817--369

BiCMOS operational amplifier circuits, 848--856

bipolar operational ampli:!ier circuit, 820-839

classes Qf, 480---494

CMOS operational amplifier circuits,

&39-S4S

general <lp-amp- ci ["(uil de.ligll, 817 -t20 ideal, 521 ~575

JFET operational amplifier circuits, 856-859

nonideal effects in, 87! -911 simplified 8JT, 695-699' o-p.-.mp parameters

defined. ~ 71-8 7 3

input and output voltage iimitations, 873-875

practical, &11-875-

Op-amps (operational .amplifum), S21-526 analysis melhod for, 525-526

ideal parameters for, 522~52~

PS_pi«; modeling of, 516

Open-circuit tim<'; constants, QQ system: transfer funclions,J94-,,398 Open-loop frequency response, ~5---881 Open-loop gain, 525

finite. 53Z. ~72, 875-885

Operational amphfiefli. See Op-amp entries exponential amplifier, 555

log amplifier, 554---555

$llorH:in::~il proiectios devices, 830 Optoisolators, 84

OR function, 32

Oscilla~rs, 9>23. 931-941

tddili<;mll conligutai"ions, 945-94.1 applieauoes and design of, 937~7 basic principles for, 9n-~38 Colpns, 945-946

cryltal,1}47

duty cycle. 962

HartJey, 946

nonsinusosdal, 960--912

pbase-sbift, ~3a-941

Pierce, 941

&:hnliu triaser, 961-963 Wien-bridge, '141-945

OUlput adm~l!ancc, small-sia;n.al, IS2 Output current limilltions.. 812 Oulput impedance, @1-@5

of CQIUDlOIl-base amplifiers, 216r21B or comraon-collector (emilter·fo~lowcr) amplifun, 207-209

of common-pie CODfi&uration, 343--344 of 5OUIU-fo~ ampli.fieo, 3~141

1m

Index

Output resistance, I W, ~72

bipolar rraasistor circuits, 580--583 MOSFET tircllilS, 2_59...-26{1, 59';1--.6(10 nonzero, 883-gS5

i!'l 741 op-amp, 836-837

ill voltage regulators, 9n-980

Output stage, in 741 op-amp, U), 828--830 OUtput stages

class-Ai pash-pull complementary, 499-508

TIL J 143··1149

OU!PUt voltage limitatiqn.s. op-amp parameters for. 873-815 OvmU gain, in ~41 on-amp, 836 Overlap capacitances, 4!7

p

p-channel MOSFET, 255·-257 p·ch.a:nnel MOSFET amplifier. 320 p-channel MOSFETs, 1035- 1 036 p-type semiconductors, ~-9. 244-24S PAI2 power amplifier. Q75,971 Parallel-based clipper (OitcuilS, 69 Parallel-plate capacitor. 244--145 Parasitic capacitances. 427

Pass networks

CMOS. 10('7 NMOS, 1062 ·106S

Pass transistor loSIc-. 1063 Passive limiter CI["(;Uit, 68

Peak inverse voltage (PIV). 5) Peak reverse voltage (PRV), 2t

Percent regulation, zener resiseance and.

67~S

Phase. and gain margins, 19:3--19-4 Phase-shift oscillator, 9J8-941 PhaSOJ quantities. 166 Phosphorous. doping with, 7 Photocurreru, 82-83 Photodetectcrs, J6 Phowdioo.es.36

eircuits USlllg, 82-83 Physical constants, 117J

Piecewise linear model, of diodes. 1 Piecewise linear models, of diode circuits,

2/-30

Pierce oscillator, 947

Piezoe lectrjc ,ry$l.1L I ci rcuu, 94 7 Piechoff, 289'-290

PinchalT \oluge, 292

P1V, See Peak inver;e V<)lI~ge

PMOS load, NMOS amplifier Wllh, 353-355 PMOS (p-cbanntl MO$FET) lransistor,

255-251

pn JFET operation. 288-292 pn junction, 12-13

diodes based on. 18-13 equilibrium, 12-1"

f orward-biased, 16-17

ideal current-voltage relationship in, 17~lB irr. npn transistors, 99

reverse-biased, 14-16

sinusoidal analysis of, 31-34

s.mall-sill,nal equ i va lent c~rcuil, 35 ~wilehiflg tran~enl. 21-TI

temperature effects, 19~20

ph junction diode, 3 pop transistors

circuit symbols. I t)6 delilled.98

forward-active made operation, 104-105 POM. D, I., 1200

Positive feedback .. 728

Positive logic system. I H

Positive voltage regulator, 982-986 described. 9'82-984

foldback dlaraclmslic. 985

t hree- terminal, 98 ~

Power, maximum rated, 472

Power amplifiers. 469--470, 923; See a/sf)

Output stages

application> and ilesit:[l, of. 972-977 bridge, 977

dass-A. 494-4'>9

integrated circuit, 972~917 lM380.972-975

PA 12. 97$-977

Power cOli:sid~nuiom. for BJT amplifiers,

226-228

Power consumption, 2

Power conversion efficienc,. ,u2, 486--488 Power derating curve. 479

POIVeJ d i ssipauoa

in CMOS inverter, 1043-11)45

ill emitter-coupled lo!ic, 1120-1121 Power transformer. S3

Power transistors, 474)...480

BJTs. 470-474

heal sinks, 471---41lD

heat sinks for. 471---4W interdigitated structure, 414 MOSFETs, 474-477

and rn .. aasistor limitations. 411 Precision half-wave rectifier, 5S3-SS4 Preci sion resistor values (one percent

I oleranee), 1196 Prince. B .. IWI

Probe program. 117S Processi rig, signal, 49 PROM cells, lOO9-H190 Pr()p~gatl!;tn delay lime

ill CMOS IOgle: eireuirs, 1054--'1055 in ECL circuits, 1134-1135

in emitter-ooupled logic, 1121

PRY. See Peak reverse voltage

PSp.~ pro8ram. 30. 1175-1181 displaying results or ~imulltion, lin drtwing the circuit, 1.116

example analyses, 1177-1181

for modeling operauonal amplifiers, 52(l origin 0," 10K~

types ofimalyses, 1116-]181 Pulse position modulator, 971

Pulse width rnodaiator (PWM). 971 Punch-through. in MOSfET.s. 161-262 Push-pull complementary output stages_

(99-508

class-A S bla;ing using the II 1I,f multiplier. :50 1,-504

class-AD output stage iltilwng the DarlingtQn oonfigl,Lntlion. 507-308 c1ass-AB oUlput stage wit. diode biasing, 499--501

d<l:>.~·A8 output stage wilb inl>ut buller rraesistors, 5Q4-S4l7

Q

Q-polnt. 26

or amplitiers, 134, LW

in common-source amplifier. n9 defined. 118

diffusion resistance. I i{I of MOSFEl circuits, 170

in srngle-base resistor biasing. IJS-I40 sta bil izing. 144

Quatilalillc description, of BJT differential pair amplifien;, 640-MJ

Quiesl::enl puiru. SO:If Q-poinl

R

R-S flip-H<::op. %5, 1010-1072 RAM memory "."ens. 1079- ][li9 CMOS SRAM cells, 1081-1085 dYMomic, 108']"-10119

NMOS SRAM cells, 1079-1081 SRAM read/write circuitry, 1()8i--J087

Ra~hid, M, H .• 1199.1262

Read-ooly memory (ROM), ICla9-l()93 EPROM and EEPROM cells, 1090-109'3 ROM and PROM cd&. 1089-1090

llead Iwr_i\~ cimli.try, SRA.M, 1 ~ s.-. LOB7

Recovery time. 964 Re«ifkalion, 2.4

full-wave, 53-56

Reel i fic.iI ion-C ont. half-wave, 50-53

Rectifie I ci rcui (5-, 24, 5O----M

filters, ripple vohage, and diode current, S6--63

voltage doubler circuit, 63-64

Referen«: circuit, ror emiuer-coepled logic, 1119-1120

Referente current, 14)

Ref erence voltage

circuil for ~deaJ, 64-67 source design for. 55&-,60 Registers. See Shift regisiers Regulators. v-oltage, 978-9811

Rejection rauo, common-mode, 657-{i,9 Resistance

di [fusion, 33. 170 nonzero output 883-885 on, 416

output, 110

reverse-biased dilTusioll, 1$.0 series. 180

small-signa I input, 181 -small·sigrtal resistasce, JJ thermal, 477

Thevenin, 190

Resistance refleenon rule, 193 Resistor biasill8, ~ngle base. 138-140 Resistor load, NMOS in~erter lilith,

IOOS-Ij}1O

Resist ors, 3

emitter, 192·-195 emitter-bypass, 196--198 emitter-degeneration, 103-704 in i nlegft ted circuits, 147 standard value, 1195---11%

Resrorieg logic family, 1013 Reverse bias. 14

Reverse-bias current, 21 Reverse-bias saturation currenl, 17 Reverse bias volt~8e

and breakdown vollage. 113, 115

and leakage current, 110-111 Reverse-biased diffusion resistance, ISO Reverse-biased pn juection, 14-16 Ripple voltage, in reo.::lilitr cirC~ls, 56-63 Roberts, G. W .• 1202

Roden. M_ So. 1199

s

i-domain analysis, oJ ~yslem transfer

functions, 386-)88 Sadiku, M. N. 0., 1199:

Sate operating acta (SOA), 412-473 Sansen, W. M. C, 1200

1m

Index

Saturalion curreat, III

reverse-bias, 17

SaturaliOIl mode, 119-.-120 SaturaliOIl region, 249-n251, 255-257 Schematics program, 1175

Schmi II lriggtr. lloninverti1l.8, ~54-9 $5 Schmitt tnyu el rcui IS, 941-%0

applications and design of. i!47-96<1 basic inverting; 951-953 comparator, 948-'501 confi.urations.954-958

""th limiters, 959-%0

Schmill trigger oscillator. 961-963 Schottky barrier diodes, 37-39 Schottky diodes, curtent-vchage

characteristics (If. 31

Schottky lrallmtor-Ir&nsistor logic,

1149-11S7

advanced circuits, 1155-1157 ,lamped transistor, 1I4~L151 low-power circuits, 1153- L 155 NANDcireuil, 1152~ILB

Scott; P. D., 1200

Second breakdown, 472

Sedra, A. S., I L99, 1201 Selective dop~ng, 10 Semi·insutatillg substrate, .291 Semiconductor constants. I] 7 J Semiconductor oovices, 2. 49

discrete, 2

Semiconductor diodes, J-48 diode circuits, 23-35 other diode types, 35-40 pn jUoWon, Il-2:!

Semiconduct6r mate-rials, 4-11; See also

individual semitQnduclQr maJeriais drifl and diffusion currents, 9-1 I eXC9l carriers, 11-12

extrinsic :5Imironduc!ors, 7-9 intrinsic semiconiluctors., 4-7

to LED circuits, 83

Semiconductors bamlpp caeriY, S ooMuctivity in. 9 doped,8,12

electron current in, 7 intrinsic carrier. fi nwt)llC. 7, 9

,-type, 8-9

SequeDtial1~c circuits, 1(167-1<175 CMOS full-adder, 1(114-1015

D flip-top, 1072-1013

dynamic sbift registers, i06S-I070 R·S flip- 8up, 1071)....1 on

Series gating, in EeL citcUl ts, 1 131-1134 Series-pass voltage regelators, simple. 980-982

Series resistance, ISO SerieHedea 1DrIpli.fim., 161-768

Series-serie-s configuration, idea l feedback topololn of, 746-.-1'7

Senes-shunt amplifiers, 749-7 5S Series-shunt oonligurati6n, i.;!eal feedback topology of. 739-742

741 oil-amp. 820-839 bias circuit in, 824-8Z6

gain stage in, &22, 826-828.833-835 input dff-smp in, 820-822

input stage in, 82"'826, B31-833 output resistance in, $36-837 output U<lse in. 823, 828-830 overall gain. in, 836

Seven-segmenr displays, 83

Shift registers, dynamic, 1068-1070 Short-circuit current gain. ;[1, bipolar

transistors, 4 J 8-42(1

Short -ci roLIit protecaon devices, 831) Shn-circuit time constants, on system transler functions, 39+398 Shunt-series amplifiers, 755-762

Sh un t-series configura lion, ldell feedbaclc topology of, 743--746

Sham-shunt amplifiers. 768-718 Shunt-shunt configuration, ideal feedback

topology of; 747-748 Signal SOIlI"Ce, sinusoidal. 167 Signal·lO-lloise ratio, 7 J S- 13 7 Signals, 49, 163

ch i P select, 1077 Silicoll,4

Silicon atoms, 4--5 Silicon doping, 7-8

Simple output stage, 69O-@5 eminer-Ichower. 6%-691

Simple series-pass V(J1t~ regulators, 980-982 Simplified BIT operationat amplifier cireuit, 61Js--.699

Sirn\llation Program with Integrated Circuit Emphasis. Sn PSpice; SPICE Singk-baSt: resistor biasing, 138-140 Sincll»tiJ8e integra led circuit MOSFET amplifiers, 345-35)

NMOS ampliher with depletion load, 351>-352

NMOS amplifier with. enhancement load, 345-349

NMOS amplifier with PMOS load. 353-355

Sinusoidal analysis, ofsc equivalent diode

circuits, 31-34

Si nusoidal base current, 168 Sinusoidal si8Jlal SOUI'O!!. 167 Sinusoidal voltages. 171J Skw mte. sn

freq·ueocy response, ~88-892 Small ge.Om~ry effects. 1007 Small signal, 161-168

SmaII-sigDal ae equivalent diode circuits, 3S Smatkip.a.l amplifiers, MooFEr. 2&7

SmaU-signal anal~is, 619-622

of active load circuits; 619.-625

Qf advanced MOSFET active load, 62Hi25

of bipolar operatioaal amplimr circuits, 830-B37

orBIT ditfetennal 3mplifiers with active load. 61~79

o[CA3140 BiCMOS operational amplifier, 854-856

of JFET amplifiers, 364-3&S

of Me 1457 3 CMOS operational amplifier circuit, 84 I -S4 J

of MOSFET active load circuit, 622~23 of multistage FET ~mplifim, 360-Ml2 Small-signal circuit gain, 181

Small-signal current gaia, in commoncollector (emuter-f 0 l!ower) amplifiers,

209-214

Sma"-signal diode incrementa] conductance. )J

Sman-signalequivalel!.l cirooll analysis of ruT d~ffen:nlial pail amplifiers. 64'8-653

of FIT differential pair amplificr!l, fi69-4j72

Smail-signal equivalent circuits, 35. 17~ for input and output impedance, 1~ in J FET amplifiers, 362-364

in MOSFET amplifiers, 318-122 Small-signal hybfid-~ equivalenrcircuits, in bipolar linear amplifiers, 17O-17~ Small-signal incremental conductance and

resistance, 33

Small-signllL iocremer. tal resistance, J3 Small-signal input resistance, 181 Small-signal out pat admittance, I S2 Small-signal parameters

for bipolar linear 1IIJIplilil,!l'S, 180--IM for MOSFET amplifiers, 314-318 Small-signal power gain, 22{J

Small-signal transistor output resistance, 177 Small-signal voltage gain, IB

ill common -base amplifiers, 2 L 4- 21'

in common-colkcter (~milter-folloo,r,er)

amplifiers, 205-207

in common-gate I;ouli!uutioo, 341-343 lor pnp transistor, 179

of source- follower iunpli6ers, 3.34-]38 Smith. K. c., 1199

Snapback: breakdowll., 262

SOA. See Saft operating area

Soclof, S .. 1200

Software, )0, 1175-L 181

Soler wls, 35-36

SoIOO1j)n. J. E.. 1200

Source biasint, censtant-current, 144-\41, 281·-283

Source bypa~ caplliilor. cummon-~ circuit with, :tH-l34

Source-follower amplifiers, 334-341

input and output impeda~, 339--341 small-signal voltage gailn, 334-338 Source-foll,,~ circuits, 334 high-frequency response ill, 444-448 Souece resistor, common-source llm:plifim

with, 32~-33J Source terminal. 246 Space-charge region, 13 Speedup diodes, 1155

SPICE (Simulation Program with bilegTated Cin:uil.Emphasis),)O, 1115

Squaring network, 1152

SRAM cel~

CMOS, I4}SI-IOSS NMOS. 1079-108)

read/write circuitry in, IOt5-I087

Stabilit" 7U-794 bias, 140-145

and Bodt plots, 785-789

Nyq ulSI sta bili Iy CJi tenon, 789-79 J phase and gain margins, 193-794

Stages. See A.mplifier stages; Mu1ti~lag¢

analysis; Output stages

Standard cias!'-A amplitier wnliguratlon, 481 Starvaski, P. 1., 1002

Storage lime. 22

Strader. N, R., 1200

Streetman, B, G» l200

Substrate, ~i-illliuJatlng, 291

Subthreshold current, 26L

Summing amplifiers, 534-536

circuit dl:$~gn, SSs-.-S5t.

SuperpositJoo principle. 169-·170 Switch, function of transistors, 131-133 SwilChed-ca]»ciMr filter, 933-937 Switched capacitors

example, 9)5-936 pnnciple of 934-935 Swilcnes. 131-133

NMOS inverter, 283-284 Switching transient, 21-23

System transfer funclions; ,l8!)"J9S Bode plots of, 388-394

first -nrder, 188

s-domain analysis of, 386----388 short-circuit and open-circuit time

constants, 394· 398 Szeto, A. Y. J., 1201

T

Tvnetwork, inverting amplifiers wilh, 530-532

TU.lahsDl call8citon, ll97 Tektronix, lnc., SlO

Index

U3f

Index

Temperature ooelfic~n.t

of input offset currem, 910 of offset voltage. 'i J()

Temperature compensation in voltage regulatioa, 9S4

Temperature effects 00 MOSFETs, 262

in operationalamplifier circuits, 909-9[0 of po junction diodes, I ~ 20

Terminology, for BH differenlial pair

amplilien. (>4()--643 Thermal equilibrium. 8 Thermal resistaece, 471 Thermal voltage, 1 3

Thevenin equivalent circuit. 141 Thevemn equivalent resistance, sn Thevenin equivalent voltage, 188 Thorpe, T. W .• 1201

) dB frequency. )90

Th~-poit amplifiers. Bode plot of. 78S-18,;) Three-pole low-pass Butterworth filter. 931 Three-termina] voltage regulator. 98:; Three-transistor act ive load. 6~ I Thtee-transistor current source. 5!W-S86 Threshold comparator, %6

Threshold voltage. 248-249

and temperature. 262 Time constant. 3S7, 3~4--3~8

in coupling capacitor circuits. 400-401 Time-varying signals, of bipolar amplifiers. 167.169

Timing circuits

applications and design (If. %tl-9-12 llonUnusoidal.960-972

Tobey. G E .• 1200

T01.aI ~annollic distortion (TH Dl. 470 Total msta ntaneous values. 166 Totem-pole output .tage. 114J- 1144,

1147-11.9 Transeonducrance. 171 composite, 687

T ransconductance (series-ser ies) ampl i fiers, 71)2-768

discrete cireuu representation, 164-768 op-amp ci rctlit represen ration, 762-763 T ransd UCi:!', S60

Traesfer characterlsrics, voltage. 1124-[125 Transler functions

of rumplel frequences, 386

in s-domain analysis, J86-388 system, 386-398

Transformer-coupkd amplifiers commcn-emiuer. 49]-4% emitter>-follov.er.497--499 Translormers, turns rauo in, 51 . 53 Transient analy$is. of NMOS inverters, 1026-1028

TrarulSl<lr amplifier c ircuits, byp~ss capacitor effects in, 410-414

Transistor amplifiers, gain-bandwidth product, 4 LIl

T ransist 01' amplifiers with circuit capacitors, 398--416

bypass capacitor elTe.::ls.41fi..414 combined etfects of coupling and tlypass

capacitors, 414--416

coupling and load capacitors, 407-4 [0 coupling capacitor effecl&. 3lJ8-4(lS load capacitor effects, 405--407

Transistor applications. 1J.1-1 H amplifiers, 134-137, 16]-241 digilal logic, 133-134 switches, BI-133

Transistor biasing. bipolar, 138-147 Transistor circuits. bigh-frl;(jumq rc~pon$¢ of. 4J3--450

Transistor currents

base currents, 101-102 collector current. 101

commoe-eminer current gain, 102-103 current relationships. 98-99

emiuer cunen I, 100

III upn transistor, 99-101 stabilizing, 144

Transistor leakage currents. nonideal, 110--113

Transistor limitations. 471

Transsior o~ra'ion, summary or MOSfET, 2S8

Transistor-transistor logic (TTL), .I nS-1149 basic d iode-tra nsistor logic gate. 1136-II!>1! b- .. sic TIL NAND circuit. 1141-1143

input transistor of TTL, 11 l8-1141 Schottky. 1149--1157

TTl.. oatpu.t stages and fanout. LJ.l.3-1149

Transistors. ~8. 247-2411 bipolaJ,416·-426

bipolar junction, 97 161 breakdo ..... n voltage, IIO-IIL driver, 273

enhaneemem load device. 271-273 field-elTect,243-311

lleal. sin ks, 477--480

input buffer, 504-507 inverse-active mode. 121

leakage currents, 11~1I1

load lines, 117-121

major types, 49, 97-!)8.

matched, 624, 819

in mul!lstage circuits. 147-ljO PMOS. 25j-257

power .. 47G-4W

sa t1J ration mode, [ 111-1 ZO Schott ky damped, [149- t 151

Transition point, 2~7-168 Transmission gates, 1058-1067 CMOS pass nelworks., 1067

CMOS transmission gate, IOM-I067 NMOS, 11)59

Transmission 1!ate~-['OnJ,

NMOS pass networks, 1062 I{J06S NMOS transmission gate, [058--1062 Transresistance (shunt-sbunt) amplifiers. 768-1n

discrete circurt representaiion, 7i().· 'J7l'1 op-amp circuit sepresentarion, 768-11l} Trigsei comparator, 966

Triode region. 149 251

TIL See Transi~If)Nransislor logic

ITI. NA ND circuu. Schottky, 1152· I) 53 Tuirenga, P_ W_,1202

Turn-off liUle, 22

Turn-on time, 21

Turn-on voltage. !7

Turns rauo, hansfolmer, SI, S3 Two-.:liodc circuit>, 7r,~71

Two-input bipolar NOR IOl!iL circun I_B Two-pole lICI ive fille..". 92(-,

Two-pole ~mplili(n. Rode plot of', 7~ ~ 7~(j Two-pole Buuerworth filters

high-pass, 92'1- 931 low-pass, 927· <)21)

Two-pori equivalent ~'irCII~\~. ]g4 Two-sided output, 6~7

Two-terrmna 1 M OS ~i r uct ure, 244- 24<Two-transistor current sources, 5 78 511.1

currenr relationships. 579- 580. j90 mismatched resi,tnr~ .. SII3 MOSFH. S9K "'OJ

output resistance. 5~O-5~3

lJ

Undefined range, W2{t Unity-gain bandwidlh, 421 in FET~. 428~30

Upper corner frequency. 395

v

valence elect rons, 7 ~8, I I Valenune, R. J _, 2 Yaractor diodes, 15

V Bi!: multiplier. class-AI biasing using,

~1)1--5(l4

Virlua1 ground. 525, sn

Virlua1 short COPC~pl, j,J6, 54~ VMOS I~ertk:al MOS, proces s. 476 Volla~

bT~lr;;doWllo, 20-21, \l<l-Hl forwarli-blas, 21

lndex

1231

VO~L~gc-- Coru. offset, 8n ·"106 peak inverse, :; 1 peak reverse, 21

Voltage divider hia~Lng. 190- 191

and bias ~1;;biliiY. 140 14~

YolLitge dou bier circui I, for recuficauon. 6J--64 Voltage f«dmck rat to. 182

Voltage follower. for nonimcrting ;~mplifier~. 5315N

VO~tlIgcgilin, 59161}5

in Bn JO;:-I'~e luad 1:1f'UII! ,. 614-6 ~ fl closed-loop. 74H

In MOSFET active load circurts. Illto.' small-signa I. 11:>. 2U~- 20;

Voluge \ilml a~iom, ~npUi and tJUlPlll, 873-l!75

Voltage regu laiors, 64, 9.:!3. <;I78-98t. a pphcatrons and design. 97~-986 descnbed. 97S

fuldback charuncrisuc. Q~'i

output n:s istance and load regulauon. 9n sso

posiuve, qn·-0,1~{\

simple serres-pass. ~ll~ -'Jg 2

VOII.,.ge (swe;-shunt) amphliers. 74'1 7.'~ di~rele crrcuu representation, 75~--n~ op-amp ci rcuit repr\:senlatloll,74~ -751 Vtlltilg~-I{I-..::mrenl convener. 54O- .. ~4J Voltage transfer charactenstics, EeL

i 1~4 1115

Voltage !tatwfer curve. CMOS inverter. 1037··1041

V"lIagts. smusoidal. 170

w

Wang, N-. 120[

Wide·twing current mirrors, 6I}b-fu(l7 Wk!lBr, R J" 1200

Widlar current sources, 589- 5~5. 695 Wicn-bridgc oscillator, 941 ·945 Wilson. G, R, 1201

Wibon current mirror. 6QS-I>06 Wil~\ln current S(IUt<:e. 587-- '>R8

for MOSf'EH. 605606 w». C-H., l!\m

z

~e.r diode circuits, 2 L 4Q, 64--6S

ideal voltage reference circuit in, 64- 67

1231

Index.

Zener diodedrc.uils~G>nt" and line regulaaon, 978

positive voltage regulator, 981-~86 U§e "m vol rage regal a tor. 64

Zeller dioes, 39-40 Zener effect, W Zener resistance, 64

and percent. regulation, ti1-68

TN710 FN34

Electronic circuit ana]ysis and design ::: J@-rI!J3#fi!;i2it E0522324¥i