Q1.

Common mode rejection ratio

It is represented analytically as the ratio of the differential gain to the common mode gain of a
differential amplifier circuit, and is a parameter that measures the ability of the amplifier circuit to
reject signals that appear simultaneously and with the same sign or phase at the inputs (common
mode signals), so an ideal circuit would have an infinite value of CMRR. In practice, a very efficient
amplifier can present CMRR values above 100,000 in a wide bandwidth, so this feature is useful to
determine optimal circuits in applications that require reducing noise effects, or in applications
where you need to amplify the differential gain by reducing electromagnetic interference.

Ad
CMRR=
Acm
Generally, CMRR can be found in dcibel values:

Ad
CMRR dB=20 log ( )
A cm

Q2.

Amplifier circuits in general, work in a frequency band, which will be defined by the capacitors
contained in the electrical circuit, and the internal capacitive effects of transistors, so there are
different areas that describe the frequency response of BJT or MOS amplifier circuits. When a
simple DC analysis is performed, the capacitors and transistor capacitances are open, so there is
no apparent amplification by the circuit. When a frequency sweep is started, there is a first zone at
low frequency, in which the effect of the circuit capacitors starts to be noticed, and the
amplification of the circuit increases, being able to measure this in a non-dimensional value or in
an increasing value of decibels as the working frequency increases, thus reaching a value known as
low frequency cut-off frequency or fl, which is located at 3 dB of the gain value of the medium
frequency band or maximum gain zone.
After the low-frequency zone, there is the mid-band zone, in which the circuit capacitors are
shorted, while the internal transistor capacitors remain open; this zone remains at a certain
bandwidth until the gain drops by 3 dB, thus placing the so-called high-frequency cutoff frequency
or fH. The high frequency zone determines the beginning of the capacitive effects of the
transistors, which cause a decrease in voltage gain at the output of the circuit, until this value falls
to a minimum value at which the input signals do not pass.

Q3.

a)

b)

V BEQ 3 =V CEQ3=V CEQ 4 =V CEQ8 =0.7 V

20−V CEQ3 20−0.7

I CQ3 ≈ 3
= =1 mA=I CQ 4=I CQ 8
19.3 x 10 19.3 x 103
I CQ 4
I CQ2=I CQ 1= =0.5 mA
2

V CEQ 2=V CEQ1=40−V CEQ4 −10 x 103∗I CQ 1=40−0.7−5=34.3 V

 I CQ 8
I CQ5=I CQ 6= =0.5 mA
2
V CEQ 5=40−0.7=39.3V

V CEQ 6=40−0.7−0.5 x 10−3∗20 x 103 =29.3V

0.5 x 10−3∗20 x 103 −0.7

I CQ7 ≈ I EQ 7= =0.4346 mA
21.4 x 103

V ECQ7=40−0.434 x 10−3 ( 20 x 10 3+ 21.4 x 103 ) =39.982V

0.434 x 10−3∗20 x 103−0.7 7.992

I CQ9 = = =3.996 mA ≈ 4 mA
2 x 103 2 x 10 3
−3 3
V 0=−20+3.996 x 10 ∗2 x 10 =−12 V
V ECQ9=20−12=8V

Q4.
 V GQ 1−V GQ 5 2−(−1.5)
R= = =17.5 K Ω
I ref 200 x 10−6
I D Q 1 ≈ I D Q 5 ≈ I D Q 2=I REF=200 μA

IQ 2
I D Q 3=I D Q 4=I D Q 6=I D Q 7= =100 μA
2
V SG 1 =V SG 2=3−2=1 V

μ p C ox W 1 2 W 2 I DQ1
I DQ 1= ( V SG 1 −V tp ) → 1 =
2 L1 L1 μ p Cox ( V GS 1−V tp )2

W1 2∗200 x 10−6
= =75
L1 100 x 10−6
( 3 )
( 1−0.6 ) 2

W1 W 2
= =75
L1 L 2

V GS 5=V GS 6 =V GS 7=−1.5−(−3 ) =1.5V

 ( μ n C ox ) W 5 2
I D Q 5= ( V GS 5−V tp )
2 L5
W5 2∗200 x 10−6
= =25
L5 ( 100 x 10−6 ) ( 1.5−0.6 )2

W6 W7 2 I DQ 6 2∗100 x 10−6
= = = =12.5
L6 L7 ( μ n C ox )( V GS 6−V tp )2 ( 100 x 10−6 ) ( 1.5−0.6 )2

W3 W6
( μn C ox )
I DQ 3 L3 W 3 L6 W4
= → = =4.16667=
I DQ 6 W L3 3 L4
( μ p C ox ) L 6
6

2 I DQ 3 2∗100 x 10−6
V GS 3=V GS 4=V tp +

√ W3
( μ n C ox ) L
3
√
=0.6+
( 100 x 10−6
) 4.16667
=1.29 V

Q5.

THS4552 Amplifier (fully differential Amplifier) 150 MHz BW, >90 dB CMRR

Datasheet https://www.ti.com/lit/ds/symlink/ths4552.pdf?ts=1598062460752&ref_url=https
%253A%252F%252Fwww.ti.com%252Fproduct%252FTHS4552

Q6.

ANALOG DEVICES https://www.analog.com/en/index.html

Texas Instruments https://www.ti.com/

SGmicro http://www.sg-micro.com/

ACQUITEK https://www.acquitek.com/

Microchip Tecnology https://www.microchip.com/