Microelectronic Circuit Design

Fourth Edition
Solutions to Exercises
CHAPTER 4
Page 153

14
ox
cm2 3.9 8.854x10 F / cm
C
A
K = n
= 500
= 69.1x106 2
= 69.1 2
7
Tox
V s
25x10 cm
V s
V
--W
A 20m
A
A 60m
A
Kn = Kn'
= 50 2
= 1000 2 Kn = 50 2
= 1000 2
L
V 1m
V
V 3m
V
A 10m
A
Kn = 50 2
= 2000 2
V 0.25m
V
--For VGS = 0V and 1V , VGS < VTN and the transistor is off. Therefore I D = 0.
'
n

VGS - VTN = 2 -1.5 = 0.5V and VDS = 0.1 V Triode region operation
W
V
A 10m
0.1
2
I D = Kn' VGS VTN DS VDS = 25 2
2 1.5 0.1V = 11.3 A
L
2
2
V 1m
VGS - VTN = 3 -1.5 = 1.5V and VDS = 0.1 V Triode region operation
W
V
A 10m
0.1
2
I D = Kn' VGS VTN DS VDS = 25 2
3 1.5 0.1V = 36.3 A
L
2
2
V 1m
Kn' = 25

A 100m
A
= 250 2
2
V 1m
V

R. C. Jaeger and T. N. Blalock

08/09/10

Page 154
1
1
= 4.00 k | Ron =
= 1.00 k
A
A
' W
Kn (VGS VTN ) 250 2 (2 1)
250 2 (4 1)
L
V
V
1
1
VGS = VTN +
= 1V +
= 3.00 V
A
Kn Ron
250 2 (2000)
V
Ron =

Page 157
VGS - VTN = 5 -1 = 4 V and VDS = 10 V Saturation region operation
2
2
Kn
1 mA
VGS VTN ) =
5 1) V 2 = 8.00 mA
(
2 (
2
2V
W
W 1mA 25
Kn = Kn'
=
=
W = 25L = 8.75 m
L
L 40A 1

ID =

Assuming saturation region operation,

2
2
Kn
1 mA
VGS VTN ) =
2.5 1) V 2 = 1.13 mA
(
2 (
2
2V
mA
g m = Kn (VGS VTN ) = 1 2 (2.5 1)V = 1.50 mS
V
2I D 2(1.125mA)
Checking : g m =
= 1.50 mS
VGS VTN (2.5 1)V

ID =

Page 158
VGS - VTN = 5 -1 = 4 V and VDS = 10 V Saturation region operation
2
2
Kn
1 mA
VGS VTN ) (1+ VDS ) =
5 1) V 2 1+ 0.02(10) = 9.60 mA
(
2 (
2
2V
2
2
K
1 mA
I D = n (VGS VTN ) (1+ VDS ) =
5 1) V 2 1+ 0(10) = 8.00 mA
2 (
2
2V
--VGS - VTN = 4 -1 = 3 V and VDS = 5 V Saturation region operation

ID =

[
[

2
2 2
Kn
25 A
VGS VTN ) (1+ VDS ) =
4
1
V 1+ 0.01(5) = 118 A
(
(
)
2
2 V2
2
2
K
25 A
I D = n (VGS VTN ) (1+ VDS ) =
5 1) V 2 1+ 0.01(10) = 220 A
2 (
2
2 V

ID =

R. C. Jaeger and T. N. Blalock

08/08/10

Page 159
Assuming pinchoff region operation, I D =
VGS = VTN +

2
2
Kn
50 A
0 VTN ) =
+2V ) = 100 A
(
2 (
2
2 V

2(100 A)
2I D
= 2V +
= 4.00 V
Kn
50A /V 2

Assuming pinchoff region operation, I D =

2
2
Kn
50 A
VGS VTN ) =
1 (2V ) = 225 A
(
2
2
2 V

Page 161

( V + 0.6V 0.6V ) = 1+ 0.75(

= 1+ 0.75( 1.5 + 0.6 0.6 ) = 1.51 V | V

VTN = VTO +
VTN

0 + 0.6 0.6 = 1 V

SB

TN

= 1+ 0.75 3 + 0.6 0.6 = 1.84 V

---

(a ) V

is less than the threshold voltage, so the transistor is cut off and ID = 0.

( b) V

- VTN = 2 -1 = 1 V and VDS = 0.5 V Triode region operation

GS

GS

V
mA
0.5
2
I D = KnVGS VTN DS VDS = 1 2 2 1
0.5V = 375 A
2
2
V

(c) VGS - VTN = 2 -1 = 1 V and VDS = 2 V Saturation region operation

2
2
Kn
mA
VGS VTN ) (1+ VDS ) = 0.5 2 (2 1) V 2 1+ 0.02(2) = 520 A
(
2
V

ID =

Page 163
(a ) VGS is greater than the threshold voltage, so the transistor is cut off and I D = 0.

( b) V

GS

- VTN = -2 + 1 = 1 V and VDS = 0.5 V Triode region operation

V
mA
0.5
2
I D = KnVGS VTN DS VDS = 0.4 2 2 + 1
(0.5)V = 150 A
2
2
V

(c) V

GS

ID =

- VTN = 2 + 1 = 1 V and VDS = 2 V Saturation region operation

2
2
Kn
0.4 mA
VGS VTN ) (1+ VDS ) =
2 + 1) V 2 1+ 0.02(2) = 208 A
(
2 (
2
2 V

R. C. Jaeger and T. N. Blalock

08/09/10

Page 167

F
CGC = 200 2 5x106 m 0.5x106 m = 0.500 fF
m

)(

CGC
pF
6
+ CGSOW = 0.25 fF + 300
5x10 m = 1.75 fF
2
m

2
pF
6
Saturation region : CGS = CGC + CGSOW = 0.333 fF + 300
5x10 m = 1.83 fF
3
m

pF
6
CGD = CGSOW = 300
5x10 m = 1.50 fF
m

Triode region : CGD = CGS =

Page 169
KP = Kn = 150U | LAMBDA = = 0.0133 | VTO = VTN = 1 | PHI = 2 F = 0.6
W = W = 1.5U | L = L = 0.25U
Page 170

1m 2
Circuits/cm =
= 16
0.25m
2

Power - Delay Product

1
1
1
= 3=
64 times improvement
3
64

Page 171
W /
v DS
*
*
iD* = n ox
vGS VTN
v DS = iD | P = VDD iD = VDD ( iD ) = P
Tox / L /
2
P*
P
P
=
= 3
*
A
A (W / )( L / )

(a ) fT =

1 500cm2 /V s
(1V ) = 7.96 GHz |
2
4
2
10 cm

(b) fT =

1 500cm2 /V s
(1V ) = 127 GHz
2 0.25x104 cm 2

5 V 5
V
V
V 4
105
L = 105
10 cm = 10 V | L = 10
10 cm = 1 V
L
cm
cm
cm

R. C. Jaeger and T. N. Blalock

08/08/10

Page 172
(a ) From the graph for VGS = 0.25 V , I D 1018 A |

(b) From the graph for V = V 0.5 V , I 3x10

(c) I = (10 transistors)(3x10 A/transistors) = 3 A
GS

TN

15

-15

Page 176
2

Active area = 10(12) = 1202 = 120(0.125m ) = 1.88 m 2

L = 2 = 0.250 m | W = 10 = 1.25 m
2

Gate area = 2(10) = 202 = 20(0.125m) = 0.313 m 2

2

Transistor area = (10 + 2 + 2)(12 + 2 + 2) = 2242 = 224(0.125m ) = 3.50 m 2

(10 m)
N=
4

3.50m

= 28.6 x 106 transistors

Page 180
Assume saturation region operation and = 0. Then I D is indpendent of VDS , and I D = 50 A.
VDS = VDD I D RD = 10 50k(50A) = 7.50 V. VDS VGS VTN , so our assumption was correct.
Q - Point = (50.0 A, 7.50 V )
--270k
10V = 2.647 V | REQ = 270k 750k | Assume saturation region.
270k + 750k
2 2
25x106 A
ID =
2.647
1
V = 33.9 A | VDS = VDD I D RD = 10 100k(33.9A) = 6.61 V.
(
)
2
V2
VDS VGS VTN , so our assumption was correct.
Q - Point = (33.9 A, 6.61 V )
VEQ =

--2
30x106 A
3 1) V 2 = 60.0 A
2 (
2
V
= VDD I D RD = 10 100k(60.0A) = 4.00 V. VDS VGS VTN , so our assumption was correct.

VGS does not change : VGS = 3.00 V | I D =

VDS

Q - Point = (60.0 A, 4.00 V )

R. C. Jaeger and T. N. Blalock

08/09/10

Page 181
2
25x106 A
3 1.5) V 2 = 28.1 A
2 (
2
V
= VDD I D RD = 10 100k(28.1A) = 7.19 V. VDS VGS VTN , so our assumption was correct.

VGS does not change : VGS = 3.00 V | I D =

VDS

Q - Point = (28.1 A, 7.19 V )

--VDS = 10
VDS =

( ) (3 1) (1+ 0.01V ) V
2

25x106 105

10 5
V = 4.76 V
1.05

DS

ID =

DS

= 10 5(1+ 0.01VDS )

2
25x106
3 1) 1+ 0.01(4.76) = 52.4 A
(
2

Page 182

10V
= 150A.
66.7k
= 3 - V curve at I D = 50 A, VDS = 6.7 V.

For I D = 0, VDS = 10 V. For VDS = 0, I D =

The load line intersects the VGS

R. C. Jaeger and T. N. Blalock

08/08/10

Page 185 Upper group

2

2V
V + VGS
2VTN + VTN2 EQ = 0
Kn RS
Kn RS

2
GS

2V
| VGS =
VTN
VTN VTN2 + EQ
Kn RS
Kn RS

Kn RS

1 2VTN
2V
1
1
VGS = VTN

+ VTN2 VTN2 + EQ = VTN +

Kn RS
Kn RS
Kn RS
Kn RS Kn RS

( 1+ 2K R (V
n

EQ

VTN ) 1

Assume saturation region operation.

ID =

1
2Kn RS2

1+ 2Kn RS (VEQ VTN ) 1 =

1
2(30A)(39k)

1+ 2(30A)(39k)(4 1) 1 = 36.8 A

VDS = 10 114k(36.8A) = 5.81 V | Saturation region is correct. | Q - Point : (36.8 A, 5.81 V )

Assume saturation region operation. I D =

1
2(25A)(39k)

1+ 2(25A)(39k)(4 1.5) 1 = 26.7 A

VDS = 10 114k(26.7A) = 6.96 V | Saturation region is correct. | Q - Point : (26.7 A, 6.96 V )

Assume saturation region operation. I D =

1
2(25A)(62k)

1+ 2(25A)(62k)(4 1) 1 = 36.8 A

VDS = 10 137k(25.4A) = 6.52 V | Saturation region is correct. | Q - Point : (25.4 A, 6.52 V )

R. C. Jaeger and T. N. Blalock

08/09/10

Page 185 Lower group

R1
1M
VEQ =
VDD =
10V = 4 V | Assume saturation region operation.
R1 + R2
1M + 1.5M
ID =

1
2Kn RS2

1+ 2Kn RS (VEQ VTN ) 1 =

1
2(25A)(1.8k)

1+ 2(25A)(1.8k)(4 1) 1 = 99.5 A

VDS = 10 40.8k(99.5A) = 5.94 V | Saturation region is correct. | Q - Point : (99.5 A, 5.94 V )

VEQ =
ID =

R1
1.5M
VDD =
10V = 6 V | Assume saturation region operation.
R1 + R2
1.5M + 1M
1

2(25A)(22k)

1+ 2(25A)(22k)(6 1) 1 = 99.2 A

VDS = 10 40k(99.2A) = 6.03 V | Saturation region is correct. | Q - Point : (99.2 A, 6.03 V )

I Bias =

VDD
V
10V
R1 + R2 = DD =
= 5 M
R1 + R2
I Bias 2A

VEQ =

V
R1
4V
VDD R1 = ( R1 + R2 ) EQ = 5M
= 2 M
R1 + R2
VDD
10V

R2 = 5M R1 = 3 M | REQ = R1 R2 = 1.2 M

Page 187

VGS = 6 22000I D VSB = 22000I D VTN = 1+ 0.75 VSB + 0.6 0.6

ID =

2
25A
VGS VTN )
(
2

Spreadsheet iteration yields ID = 83.2 A.

Page 183

Equation 4.55 becomes 6 - 1 + 0.75 VSB + 0.6 0.6 + 2.83 VSB = 0.

VSB2 6.065VSB + 7.231 = 0 VSB = 1.63V.
RS =

1.63V
= 16.3 k 16 k
104 A

RD =

(10 6 1.63)V = 23.7k 24 k

104 A

R. C. Jaeger and T. N. Blalock

08/08/10

Page 189
Assume saturation region operation.
10 6 =

25x106 62x10 4
2

) (V

GS

+ 1) VGS VGS2 + 0.710VGS 4.161 = 0 VGS = 2.426V , + 1.716V

2
25x10
2.426 + 1) = 25.4 A | VDS = 10 137k(25.4A) = 6.52 V
(
2
Saturation region is correct. | Q - Point : (25.4 A, - 6.52 V )
6

ID =

Page 195
(a) VDS = 3 V , VGS VP = 2 (3.5) = +1.5 V. The transistor is pinched off.
2

2V
V 2
I D = I DSS 1 GS = 1mA 1
= 184 A | Pinchoff requires VDS VGS VP = +1.5 V
VP
3.5V

(b)

VDS = 6 V , VGS VP = 1 (3.5) = +2.5 V. The transistor is pinched off.

2

2
1V
VGS
I D = I DSS 1
= 1mA 1
= 510 A | Pinchoff requires VDS VGS VP = +2.5 V
VP
3.5V

(c)

VDS = 0.5 V , VGS VP = 2 (3.5) = +1.5 V. The transistor is in the triode region.

ID =

2(1mA)
2I DSS
VDS
0.5
V

V
=
2
+
3.5

0.5 = 51.0 A
GS
P
DS
2
2
2
VP2

3.5
( )

Pinchoff requires VDS VGS VP = +1.5 V

(a )

VDS = 0.5 V , VGS VP = 2 (4) = +2 V. The transistor is in the triode region.

ID =

(b)

2(0.2mA)
2I DSS
VDS
0.5
V

V
=
2
+
4

0.5 = 21.9 A
GS
P
DS
2
2
2
VP2
(4)

VDS = 6 V , VGS VP = 1 (4) = +3 V. The transistor is pinched off.

2

1V
V 2
I D = I DSS 1 GS = 0.2mA 1
= 113 A
VP
4V

R. C. Jaeger and T. N. Blalock

08/09/10

Page 197
(a) VDS = 3 V , VGS VP = 3 4 = 1 V. The transistor is pinched off.
VGS 2
3V 2
I D = I DSS 1
= 2.5mA 1 = 156 A | Pinchoff requires VDS VGS VP = 1 V
4V
VP

( b)

VDS = 6 V , VGS VP = 1 (4) = 3 V. The transistor is pinched off.

VGS 2
1V 2
I D = I DSS 1
= 2.5mA 1 = 1.41 mA | Pinchoff requires VDS VGS VP = 3 V
4V
VP

(c)

VDS = 0.5 V , VGS VP = 2 (4) = 2 V. The transistor is in the triode region.

ID =

2(2.5mA)
2I DSS
VDS
0.5
V

V
=
2

(0.5) = 273 A
GS
P
DS
2
2
VP2
42

Pinchoff requires VDS VGS VP = 2 V

Page 198

BETA =

I DSS 2.5mA
=
= 0.625 mA | VTO = VP = 2 V | LAMBDA = = 0.025 V -1
2
2
VP
(2)

BETA =

I DSS 5mA
= 2 = 1.25 mA | VTO = VP = 2 V | LAMBDA = = 0.02 V -1
2
VP
2

10

R. C. Jaeger and T. N. Blalock

08/08/10

Page 200
VTO = VP = 5 V | BETA =

I DSS 5mA
=
= 0.2 mA | LAMBDA = = 0.02 V -1
VP2 (5)2

VGS = VG VS = IG RG I S RS = 0 I D RS = I D RS
2

V
2
K
K
K
VGS = n (VGS VTN ) RS = n VTN2 RS GS 1 = I DSS RS 1 GS for I DSS = n VTN2 and VP = VTN
2
2
2
VTN
VP
2

V
V
2
0.4mA
VGS =
5) (1k)1 GS = 51+ GS VGS2 15VGS + 25 = 0 and the rest is identical.
(
2
5
5

--Assuming pinchoff, I D = 1.91 mA and VDS = 9 1.91mA(2k + 1k) = 3.27 V.

VGS VP = 3.09 V , VDS > VGS VP , and pinchoff is correct.
--2

V
VGS 2
3
3
2
GS
Assuming pinchoff, VGS = I DSS RS 1
= 5x10 2x10 1+
VGS + 12.5VGS + 25 = 0
5

VP

)(

2
V
2.5
GS
VGS = 2.5 V | I D = I DSS 1
= 5mA1
= 1.25 mA
5

VP

VDS = 12 1.25mA(2k + 2k) = 7.00 V.

VGS VP = 2.5 (5) = +2.5 V , VDS > VGS VP , and pinchoff is correct. Q - Point : (1.25 mA, 7.00 V )
---

(a ) V

= IG RG = 10nA(680k) = 6.80 mV.

2

2
VGS
VGS
3
3
2
VGS = VG VS = IG RG I DSS RS 1
= .00680 5x10 10 1+
VGS 15VGS + 25 = 0
V
5

)( )

The value of VG is insignificant with respect to the constant term of 25. So the answers are
the same to 3 significant digits.

(b) V

= IG RG = 1A(680k) = 0.680 V and now cannot be neglected.

2
V 2
VGS
3
3
2
GS
VGS = VG VS = IG RG I DSS RS 1
= 0.680 5x10 10 1+
VGS 15VGS + 28.4 = 0
V
5

)( )

V
2.226 2
GS
VGS = 2.226 V | I D = I DSS 1
= 5mA1
= 1.54 mA
5

VP
VDS = 12 1.54mA(2k + 1k) = 7.38 V | Q - Point : (1.54 mA, 7.38 V )

11

R. C. Jaeger and T. N. Blalock

08/09/10