P2N2222A Amplifier Transistors

NPN Silicon
Features

These are PbFree Devices*

MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO92 CASE 29 STYLE 17

http://onsemi.com
COLLECTOR 1 2 BASE 3 EMITTER

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

3 STRAIGHT LEAD BULK PACK

12

3 BENT LEAD TAPE & REEL AMMO PACK

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

P2N2 222A AYWW G G

A = Assembly Location Y = Year WW = Work Week G = PbFree Package (Note: Microdot may be in either location)

ORDERING INFORMATION
Device P2N2222AG P2N2222ARL1G Package TO92 (PbFree) TO92 (PbFree) Shipping 5000 Units/Bulk 2000/Tape & Ammo

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2013

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: P2N2222A/D

January, 2013 Rev. 7