BC327 SERIES

PNP GENERAL PURPOSE TRANSISTORS

5 VOLTAGE FEATURES
General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = -800mA

45

POWER

625mW

MECHANICAL DATA
Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208 Device Marking: BC327-16: 7A BC327-25: 7B BC327-40: 7C
2 BASE

COLLECTOR

1 2 3

3 EMITTER

TO-92

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL Value UNIT

Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range

VCE0 VCB0 VEB0 IC PTOT TJ , TSTG

-45 -50 -5.0 -800 625 -55 to 150

V V V mA mW

THERMAL CHARACTERISTICS
PARAMETER SYMBOL Value UNIT

Thermal Resistance , Junction to Ambient (Note 1)

RJ A

200

/W

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0) Collector - Emitter Breakdown Voltage (VEB=0V, IC=-100uA) Emitter - Base Breakdown Voltage (IE=-10uA, IC=0) Emitter-Base Cutoff Current (VEB=-4V) Collector-Base Cutoff Current (VCB=-30V, IE=0) Collector Cutoff Current (VCE=-45V, VBE=0) DC Current Gain (IC=-100mA,VCE=-1V) BC337-16 BC337-25 BC337-40 (IC=-300mA, VCE=-1V) Collector Emitter Saturation Voltage (IC=-500mA, IB=-50mA) Base Emitter Voltage (IC=-300mA, VCE=-1.0V) Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz) Current Gain Bandwidth Product (IC=-10mA, VCE=-5V, f=100MHz)

V(BR)CE0 V(BR)CES V(BR)EB0 IEBO ICBO ICES

-45 -50 -5.0 100 160

5.0 210

-100 -100 -100 250 400 630 -0.7 -1.2 -

V V V nA nA nA

hFE

250 40

VCE(SAT) VBE(ON) CCBO fT

V V pF MHz

ELECTRICAL CHARACTERISTICS CURVES

1000
1000 TJ = 150C

TJ = 150C
TJ = 25C

hFE

100 TJ = 100C

hFE

TJ = 25C

100

TJ = 100C

V CE = 1V 10 0.01 0.1 1 10 100 1000

10 0.01 0.1

V CE = 1V 1 10 100 1000

Colle ctor Cur r e nt, IC (m A)

Colle cto r Cur r e nt, IC (m A)

Fig. 1. BC337-16 Typical hFE vs. IC

1000 TJ = 150C

Fig. 2. BC337-25 Typical hFE vs. IC

100 CIB (EB) Capacitance, C (pF

TJ = 25C hFE

100

TJ = 100C

10

COB (EB)

V CE = 1V 10 0.01
1

0.1

10

100

1000

0.1

10

100

Colle ctor Curre nt, IC (m A)

Reverse Voltage, VR (V)

Fig. 3. BC337-40 Typical hFE vs. IC

Fig. 4. Typical Capacitances

TO-92 PACKAGE OUTLINE

TO-92

ORDER INFORMATION BC327-xx B Bulk 5,000 per box BC327-xx T/R Tape and Reel, 2,000 per reel BC327-xx A/B Ammo Pack, 2,000 Per Ammo Pack

Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.