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Hamamatsu IR Detectors Tutorial
Hamamatsu IR Detectors Tutorial
SD-12
Introduction
Infrared radiation consists of electromagnetic waves in the wavelength region from 0.75 m to 1000 m, lying between
visible light and microwave light. In order to cover this broad spectrum of wavelengths, a variety of infrared detectors
have been developed and produced.
This manual describes major characteristics and applications of Hamamatsu infrared detectors, including InGaAs PIN
photodiodes, PbS and PbSe photoconductive detectors, InAs and InSb photovoltaic detectors, MCT (HgCdTe) photoconductive detectors, pyroelectric detectors, and hybrid detectors used in a combination of two or more detectors.
Custom-made detectors are also available upon request. Please feel free to consult Hamamatsu regarding your
specific requirements.
Contents
1. Infrared radiation ................................................................................................................ 3
2. Types of infrared detectors ................................................................................................ 8
3. Selection guide ................................................................................................................ 10
4. InGaAs PIN photodiode ................................................................................................... 11
5. InGaAs linear image sensor ............................................................................................ 17
6. PbS, PbSe photoconductive detector .............................................................................. 18
7. InAs, InSb photovoltaic detector ...................................................................................... 22
8. MCT (HgCdTe), InSb photoconductive detector .............................................................. 24
9. Pyroelectric detector ....................................................................................................... 27
10. Two-color detector ......................................................................................................... 32
11. Cooling technique .......................................................................................................... 33
12. Applications of infrared radiation .................................................................................... 36
12-1 Optical power meters ........................................................................................................... 36
12-2 LD monitors ......................................................................................................................... 36
12-3 Radiation thermometers ....................................................................................................... 36
12-4 Flame monitors (flame detection) ......................................................................................... 37
12-5 Moisture analyzers .............................................................................................................. 37
12-6 Gas analyzers ..................................................................................................................... 37
12-7 Infrared imaging devices ....................................................................................................... 38
12-8 Remote sensing ................................................................................................................... 39
12-9 Sorting devices .................................................................................................................... 39
12-10 Human body detection ....................................................................................................... 39
12-11 Spectrophotometers (FT-IR) ............................................................................................... 41
104
102
T(K)=6000
5000
4000
3000
101
2000
10
1500
10-1
1000
800
10-2
600
-3
10
400
-4
10
273
-5
10
200
-6
10
10
-7
.2
.4 .6 .81
4 6 810
20
40 60 80100
103
10-8
0.1
Infrared radiation is the electromagnetic waves in the wavelength region longer than the visible light wavelengths, lying
from 0.75 m (1.65 eV) to 1000 m (1.2 meV). The wavelength
region of 0.75 m to 3 m is often called the near infrared, the
wavelength region of 3 m to 6 m the middle infrared, and the
wavelength region of 6 m to 15 m the far infrared. Also, even
longer wavelength regions are sometimes referred to as ultrafar infrared, but this is not a universally accepted term.
1. Infrared radiation
WAVELENGTH (m)
KIRDB0014EB
TRANSMISSION
SYSTEM
OPTICAL
SYSTEM
DETECTOR
SIGNAL
PROCESSING
INFRARED
SOURCE
M = T4
[W/cm2K4]
-12
[W/cm2]
2. Stefan-Boltzmann law
[mK]
[m]
M' = M
: emissivity
maxT = 2897.8
max : Maximum radiant wavelength
[K]
[Wm4/cm2]
[mK]
[m]
T : Absolute temperature
C1 : 1st radiation constant = 3.74 104
C2 : 2nd radiation constant = 1.44 104
: Wavelength
[W/cm2m]
All objects with an absolute temperature of over 0 K emit infrared radiation. Infrared radiant energy is determined by the temperature and surface condition of an object. Suppose there is
an object that absorbs all radiant energy and appears completely black at wavelengths. This object is called "blackbody".
The following formula and laws can be established with regard
to blackbodies.
1. Infrared radiation
Table 1-2 Types of Infrared radiation sources 1)
Type
Method
Material
Tungsten
Resistor heating by
current flow
1 to 2.5
Infrared bulb
Nichrome
Kanthal
Silicon carbide (siliconate)
Remark
Long wavelength region is
cut off by external bulb
(glass). Secondary radiation
is emitted through the tube.
Secondary heating by
other power source
Electric heater
Ceramic
1 to 50
1 to 50
Sheath heater
IRS type lamp
Ceramic
Metal (stainless steel, etc.)
2 to 5
Globar
Nernst glower
4 to 10
4 to 25
Radiant burner
Thermal
radiation
1 to 20
Carbon
2 to 25
Cold
radiation
Gas discharge
Mercury
Cesium
Xenon
Mercury lamp
Xenon lamp
0.8 to 2.5
Stimulated
emission
Laser reaction
Carbon dioxide
Gallium arsenic compounds
Lead compounds
CO2 laser
InGaAsP laser
PbSnTe laser
9 to 11
1.1 to 1.5
6 to 7
Heating by discharge
10
20
50
100
500 1000
WAVELENGTH (m)
STEAM LASER
CO2 LASER
SOLID
STATE
LASER
YAG LASER
InGaAsP
SEMICONDUCTOR
LASER
PbSnTe
10
100
1000
ALTITUDE 41 km
ALTITUDE 28 km
PbSnSe
1
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
C2N2 LASER
GAS
LASER
He-Ne LASER
ABSORPTION
0
0.2
0.4
0.6
0.8
1.0
KIRDB0123EA
0.8
1.0
1
10 11 12 13 14 15
KIRDB0124EA
103
102
101
100
10-1
10-2
10-3
0.2 0.3
0.5
10
20
CO2
H2O CO2
H2O
H2O CO2
H2O
CO2 O3
CO2
O3
ABSORBED MOLECULES
104
A: SiO2
B: GdF3-BaF2-ZrF4
C: Ge-S
D: Tl (Br, l)
WAVELENGTH (m)
O2
105
WAVELENGTH (m)
106
0.6
0.4
ALTITUDE 4 km
KIRDB0125EA
0.2
ABSORPTION
ALTITUDE 14 km
0
0.2
0.4
0.6
0.8
1.0
KIRDB0126EA
1. Infrared radiation
NaCI (2 mm)
CaF2
(1 mm)
0.9
KBr (4 mm)
TRANSMITTANCE
0.8
As2S3 (5 mm)
AgCI (1 mm)
0.7
0.6
ZnSe
(3 mm)
0.5
Si
0.4
QUARTZ FOR
INFRARED
RADIATION
(5 mm)
0.3
0.2
0.1
0
0.1
0.2
SAPPHIRE
(1 mm)
Ge (1 mm)
DIAMOND
(1 mm)
KRS-5
0.3
0.5
0.7
9 10
20
30
40
WAVELENGTH (m)
KIRDB0127EB
100
90
TRANSMITTANCE (%)
60
CENTER WAVELENGTH
PEAK TRANSMITTANCE
50
40
30
20
10
50 % OF PEAK
TRANSMITTANCE
HALF
WIDTH
(FWHM)
SIDE 5 % OF PEAK
BAND
TRANSMITTANCE
1.24
[eV]
80
70
hc
In comparison with visible and ultraviolet rays, infrared radiation has small energy, for example 1.24 eV at 1 m and 0.12 eV
at 10 m. To increase infrared detection efficiency, the detector
should be cooled. Major characteristics indicating infrared detector performance are photo sensitivity, noise equivalent
power (NEP) and D*.
SIDE
BAND
WAVELENGTH
KIRDB0128EB
R=
S
PA
S : Signal output
P : Incident energy
A: Detector active area
[V/W]
[V]
[W/cm2]
[cm2]
(: quantum efficiency)
ISC
=
=
R =
PA
hc
1.24
= 1.24
[W/Hz1/2]
S/N
N : Noise output
f: Noise bandwidth
[V]
[Hz]
PA
NEP =
PA
qPA
Isc = q
=
c
hc
h
Output signals from photovoltaic detectors are usually extracted as photocurrent, so the photo sensitivity is expressed in
units of A/W. When light at a given wavelength enters a photovoltaic detector, the photocurrent Isc is expressed by the following equation.
1. Infrared radiation
S/N
D* =
A
NEP
[cm . Hz1/2/W]
RL
VO
(LOAD RESISTANCE) (OUTPUT SIGNAL)
l
d
Rd (DARK RESISTANCE)
VB (BIAS VOLTAGE)
KIRDC0028EA
Rd
(Rd+ RL)
RL VB
Vo = -
RL
VB
Rd + RL
Vo =
Rd is calculated as follows:
100
PA
lwdhc
lwdhc
RLRdVB
q (e + h )
(Rd + RL) 2
PA
Vo
1
2
10
However, there are very few cases in which the quantum efficiency is determined using the above formulas, because Rd,
e, h, and are quantities which are related to each other.
R =
10
: Carrier lifetime
e: Electron travel length
h: Hole travel length
: Electrical conductance
q ( e + h )
Rd = - Rd
KIRDB0129EA
1. Infrared radiation
Figure 1-10 Example of signal processing circuit
0.1 pF D
133 k
15 F 0.01 F
Rf 100
3 M
S S
J230
DETECTOR
+11 V
LM
+ 108 A
TIA
806 k
806 k
OUTPUT
-12 V
BIAS POWER
SUPPLY
300 K
77 K
KIRDC0029EA
InGaAs
PbS
Radiation
thermometer
G8376-03
P9217 series
HMD
(Hot Metal Detectors)
G8376-03
PbSe
InAs
InSb
P7163
P8079 series
P6606 series
MCT
Two-color
detector
P9217 series
P791-11
P3981
P9217 series
Flame monitors
K1713 series
K1713-01
K1713-02
P791-11
Fire detectors
Moisture analyzers
G8372-01
G8373-01
Gas analyzer
G8371-01
G8372 -01
G8373 -01
Spectrophotometer
G8371-01
G9211-256S
G9212-512S
G9213-256S
G9214-512S
G9208-256W
P2532-01
P2682-01
P9217 series
Film thickness
gauges
P791-11
P2038-03
P2680-03
P5968 series
P6606 series
P2750
P3981
P7163
P8079 series
P2532-01
P2682-01
P8079 series
P4247-16
P5968 series
P3257 series
P4249-08
P5274
P5274-01
P3257 series
P3981
P791-11
P2038-03
Laser monitors
G8376 series
G8941 series
Optical power
meters
K1713-05
K1713-09
P8079 series
P3257-30
P3257-31
G8370-02
G8370-03
G8370-05
O/E converters
K1713-05
K3413-05
G8370-01
G8376-01
G8376-02
G6854-01
P5968 series
P3257 series
P2748-40
P2748-41
P2748-42
P5274
P5274-01
Thermal imaging
P4247-44
P5968 series
P2750
P3257 series
P4249-08
Remote sensing
P5968 series
P5138 series
P8079 series
FTIR
Human body
detection
Detector
Thermocouple . Thermopile
Bolometer
Pneumatic cell
Pyroelectric detector
Thermal type
Spectral
response (m)
Operating
temperature (K)
Depends on
window material
Type
300
300
300
300
D
D
D
D
(,10,1) = 6 108
(,10,1) = 1 108
(,10,1) = 1 109
(,10,1) = 2 108
D(cm . Hz1/2 / W)
Photoconductive type
PbS
PbSe
InSb
HgCdTe
1 to 3.6
1.5 to 5.8
2 to 6
2 to 16
300
300
213
77
D
D
D
D
(500,600,1) = 1 109
(500,600,1) = 1 108
(500,1200,1) = 2 109
(500,1000,1) = 2 1010
Photovoltaic
type
Ge
InGaAs
Ex. InGaAs
InAs
InSb
HgCdTe
0.8 to 1.8
0.7 to 1.7
1.2 to 2.55
1 to 3.1
1 to 5.5
2 to 16
300
300
253
77
77
77
D
D
D
D
D
D
(p) = 1 1011
(p) = 5 1012
(p) = 2 1011
(500,1200,1) = 1 1010
(500,1200,1) = 2 1010
(500,1000,1) = 1 1010
1 to 10
2 to 14
2 to 30
2 to 40
1 to 17
1 to 23
77
4.2
4.2
4.2
4.2
4.2
D
D
D
D
D
D
(500,900,1) = 1 1011
(500,900,1) = 8 109
(500,900,1) = 5 109
(500,900,1) = 5 109
(500,900,1) = 5 109
(500,900,1) = 5 109
Intrinsic
type
Quantum type
Ge : Au
Ge : Hg
Ge : Cu
Ge : Zn
Si : Ga
Si : As
Extrinsic type
1013
PbS (196 K)
Ex. InGaAs
(223 K)
D*(cm . Hz1/2/W)
1012
10
InAs (77 K)
InAs (196 K)
11
InSb (77 K)
HgCdTe (77 K)
10
Si:Ga (4.2 K)
HgCdTe (77 K)
PbS
(77 K)
10
PbS
(300 K)
HgCdTe (77 K)
GeAu (77 K)
PbSe
109 (196 K)
PYROELECTRIC DETECTOR (300 K)
PbSe (77 K)
PbSe (300 K)
108
1
10
11
12
13
14
15
16
17
18
WAVELENGTH (m)
KIRDB0079EB
[cm . Hz1/2/W]
: Wavelength
: Quantum efficiency
h : Planck constant
c : Speed of light
Q: Flux of background radiation
[cm . Hz1/2/W]
2hc Q
D* of photoconductive detector = D* =
hc 2Q
D* of photovoltaic detector = D* =
Theoretical limit of D*
Some noise occurs when detecting infrared radiation. This
noise may come from the infrared detector itself, from its operating circuits or from background fluctuation. Suppose that
noise from an infrared detector and its circuits can be ignored
in comparison with the noise caused by background fluctuation. The detection limit is determined by only the noise from
the background fluctuation. This is called "Background Limited Infrared Photodetection (BLIP)". The BLIPs of photovoltaic
detectors and photoconductive detectors are given as follows:
(5) Package
Packages used for infrared detectors are divided into metal can
package, ceramic package, DIP types and Dewar types (glass
or metal).
Also, depending on the application, the linearity, stability, temperature characteristics, price and other elements become important factors for selection.
Figure 3-1 Package examples
INFRARED RAY
DRY ICE
ELEMENT
ELEMENT COOLING DEVICE, etc. INFRARED RAY THERMISTOR
TE-COOLER
ELEMENT
3. Selection guide
Glass dewar
Thermoelectrially-cooled
Metal package
INFRARED RAY
Metal package
KIRDC0009EA
10
infrared detectors
Measurement
temperature limit
Infrared detector
600 C
200 C
100 C
50 C
0 C
-50 C
Si
InGaAs
PbS
PbSe
InSb
MCT, pyroelectric detector
D* (Detectability)
D* is a measure of the S/N of a detector when infrared radiation
of 1 W is input through an optical chopper. Since D* is independent of the active area and shape of the detector element, it is
convenient when comparing characteristics of the detector element materials.
D* is usually measured by normalizing the detector active areas to 1 cm2 and setting the amplifier bandwidth to 1 Hz. Measurement conditions of D* are expressed in the form of D* (A, B,
C), where A is the temperature of a light source (K) or wavelength (m), B is the chopping frequency (Hz), and C is the
noise bandwidth (Hz). The units are cmHz1/2/W. The higher the
value of D*, the better the detection capability.
G NEP
sensitivity
This represents the magnitude of photo sensitivity (voltage or
current) per watt of incident light. The photo sensitivity of photoconductive type detectors is expressed in V/W, and the photo
sensitivity of photovoltaic type detectors is expressed in A/W.
G Photo
FORWARD
CURRENT
amplifier. Supposing the open loop gain of the operational amplifier is "A", the equivalent input resistance expressed as Rf/A
due to the negative feedback circuit becomes several digits
smaller. Thus, an ideal Isc measurement is possible with this
method. When measuring Isc over a wider range, change the
Rf value as necessary.
InAs
FORWARD
VOLTAGE
REVERSE
VOLTAGE
6.1
SATURATION
CURRENT
In0.8Ga0.2As
In0.53Ga0.47As
REVERSE
CURRENT
5.9
InP
5.8
KIRDC0030EA
5.7
GaAs
(b) Illuminated
5.6
CURRENT
LATTICE CONSTANT ()
6.0
0.4
0.8
1.2
1.6
2.0
LIGHT
Isc
LIGHT
SATURATION
CURRENT
5.5
Voc'
Isc
Isc'
Voc
3
HIGHER
ILLUMINANCE
KPDC0005EA
CURRENT
VOLTAGE
HIGH LOAD LINE
KPDB0003EA
4-1 Characteristics
VOLTAGE
Voc
KIRDB0130EA
11
G Io RL
LIGHT
Io
RL
Rf
- (Isc Rf)
Figure 4-5
(a) Linearity
(Typ. Ta=25 C, =1.3 m, RL=2 , VR=0 V)
KPDC0006EA
LIGHT
Isc
102
G8370-01
98
G8370-02
96
G8370-03
94
G8370-05
92
100
90
0
10
12
14
16
q : Electron charge
k : Boltzmann constant
T: Absolute temperature of element
Is: Saturation current of photodiode in the reverse direction
Isc Rs .................
q (Isc Rs)
(4-1)
- 1 Rsh
kT
Isc = IL - Is exp
KIRDB0245EA
RL
0
-2
-4
-6
-8
-10
0
10
12
14
16
KPDC0004EA
LOAD
Rsh
VD
Ct
I'
ID
VO
IL
IO
Rs
12
KIRDB0131EA
(a)
Rf
(b)
1
in
[W / HZ 2 ] ..................................................... (4-6)
S
in: Noise current
S : Photo sensitivity
NEP =
ij + iSD 2 + i SL2
FREQUENCY
DETECTING
OUTPUT
MEASURING LIGHT
LED
PHOTODIODE FOR REFERENCE
LOCK-IN
AMPLIFIER
KPDC0007EA
There are two types of InGaAs PIN photodiodes. One is a standard type whose cut-off wavelength is 1.7 m and the other is a
long wavelength type with longer cut-off wavelengths. Their
spectral response characteristics are shown in Figures 4-8 (a)
and (b). The detection limit wavelength can be calculated by
using the band gap energy Eg in the following formula.
.................................................................. (4-5)
1.24
Eg
2qIL B
c [m] =
isl =
On the other hand, when the optical current "IL" flows by input of
light, and IL >> 0.026/Rsh or IL >> ID, formula (4-5) of the shot
noise "iSL" is used instead of (4-3) or (4-4).
4kTB
[A] ........................................................... (4-3)
Rsh
k : Boltzmann constant
T: Absolute temperature of the element
B: Noise bandwidth
ij =
in =
KIRDC0031EA
RL
13
1014
-20 C
-10 C
D (cm Hz1/2/W)
25 C
10
12
-20 C
80
-77 C
1011
0.6
0.8
1.2
1.4
1.6
1.8
60
-196 C
WAVELENGTH (m)
KIRDB0134EA
40
20
10
12
10
11
-50 C
25 C
100
10
13
0
0.8
1.4
1.6
1.8
1.2
-40 C
-30 C
D (cm Hz1/2/W)
WAVELENGTH (m)
KIRDB0132EA
10
10
100
25 C
25 C
80
-30 C
10
1.5
2.5
-40 C
60
WAVELENGTH (m)
-50 C
KIRDB0135EA
40
20
0
1.4
1.6 1.8
1.2
KIRDB0133EA
WAVELENGTH (m)
Response speed is the value that exhibits how fast the generated carrier flows to external circuits as a current. The response
speed is expressed in rise time "tr" at which an output signal
rises from 10 % to 90 % of its peak value. The following relation
lies among tr, Ct, RL and Rs.
14
Ct
A
VR
....................................................................... (4-9)
As stated in 4-1-5, "Spectral response", spectral response characteristics vary with detector temperature. Temperature characteristics of shunt resistance Rsh are shown in Figure 4-12.
Since the shunt resistance Rsh increases as the detector temperature decreases, the S/N can be improved by cooling the
detector. Thermoelectrically-cooled type InGaAs PIN photodiodes are available for operation at a constant temperature (or
cooled temperature). These types have one-stage or two-stage
thermoelectric cooling element and a thermistor sealed in the
same package. See Section 11 for more information on cooling
techniques.
104
G8370-03
10
10
11
10
103
G8370-05
G8370-02
G8376-03
G8376-05
101
G8376-03
100
G8376-02
G6854-01
G8376-01
10-1 -2
10
10
10
10
G8370-01
10
10
10
G8370-02
G8370-03
-1
G8376-05
10
SHUNT REGISTANCE ()
G8370-01
102
20
40
60
80
KIRDB0262EB
MEASURING DEVICE
INPUT IMPEDANCE
(50 CONNECTION)
Isc
Cf
Rf
EO = - (Isc Rf)
KPDC0009EA
KIRDC0040EB
V
VR
FOR OFFSET
ADJUSTMENT
50 COAXIAL CABLE
REVERSE
VOLTAGE
MEASURING
DEVICE
-20
106
-40
KIRDB0261EB
LIGHT
G8370-05
15
G Selecting
Feedback resistance
In Figure 4-13, the output of photocurrent becomes the voltage
of Isc Rf (current-voltage conversion).
The feedback resistance Rf is determined by Isc and the required output voltage Vo. When it becomes larger than the
shunt resistance, the input noise voltage and input offset voltage of the operational amplifier are multiplied by (1+ Rf/Rsh)
and the result is superimposed over the output voltage. As the
bias current error of the operational amplifier also becomes
large, the feedback resistance should not be allowed to increase without limit. The feedback capacitance Cf is sometimes
called the damping capacitance and is used mainly for oscillation protection. In some cases, a few pF is sufficient for this
protection. This feedback circuit has a time constant of Cf Rf
and serves as a noise filter. However, at the same time it constrains the response speed, and so it is necessary to select
values that suit your applications. Also, the error caused by offset voltage can be reduced to below 1 mV by connecting a
variable resistor to the offset adjustment terminal of the operational amplifier.
16
cross section
250 m
or
500 m
50 m or 25 m
300 m
PASSIVATION FILM
N-TYPE InGaAs
KIRDC0032EA
G Uses
(Typ.)
1.5
T= 25 C
T= -20 C
G8180 SERIES
G8160 to G8163
SERIES
1.0
0.5
G Built-in
G Two
1.0
2.0
1.5
2.5
3.0
0
0.5
WAVELENGTH (m)
KIRDB0120EA
G8160-256S
G8161-512S
G8162-256S
G8163-512S
0.9 to 1.7
G8180-256W
0.9 to 2.6
Two-stage
TE-cooled
Non-cooled
Unit
m
-
Number of pixels
256
512
256
512
256
Pixel pitch
50
25
50
25
50
250
Pixel height
Package
Package length
Window material
250
500
28-pin DIP
63.5
mm
Sapphire
17
R (f ) =
2 2
[V]
2
1 + 4 f
PbS and PbSe photoconductive detectors are infrared detectors making use of the photoconductive effect that resistance is
reduced when infrared radiation enters the detecting elements.
Compared with other detectors in the same wavelength region,
the PbS and PbSe have superior features, such as higher detection capability, faster response speed, and they also operate at room temperatures. However, the dark resistance, photo
sensitivity and response characteristics change depending on
the ambient temperature. Therefore, care is required to ensure
the best results.
Since the PbS and PbSe have typical 1/f noise spectra, D becomes:
6-1 Characteristics
k f
D* (f ) =
1
.
2
1 + 4 2 f 2 2
(Typ.)
1012
-10 C
1011
(Typ. Ta=25 C)
25 C
10
10
10
10
KIRDB0265EA
WAVELENGTH (m)
RELATIVE S/N
109
-20 C
The frequency characteristics of PbS and PbSe photoconductive detectors are as shown in Figures 6-3 and 6-4. Also, Figure
6-7 shows the frequency characteristic of the PbS at room temperatures (+25 C), at thermoelectrically-cooled temperature
(-20 C).
(Typ.)
1010
101
101
102
103
T= -10 C
10
T=25 C
10
T= -20 C
10
KIRDB0051EA
WAVELENGTH (m)
18
100
(Typ. Ta=25 C)
+25 C
102
RELATIVE S/N
S/N
-20 C
10
RELATIVE SENSITIVITY
10
1
1
10
102
103
104
10
10
10
KIRDB0083EA
KIRDB0053EA
6-1-3 Linearity
10
100
-1
10
DEPENDENT ON NEP
10-3
10-2
Photo sensitivity, dark resistance and rise time of the PbS and
PbSe vary with the temperature of the element, as shown in
Figures 6-8 through 6-11.
10
-4
10
(Typ.)
RELATIVE SENSITIVITY
10
Figures 6-5 and 6-6 show the relationship between the input
energy and the output signal. The lower limit is determined by
the NEP values of the PbS and PbSe respectively.
10-6
10-5
10-4
KIRDB0084EA
102
101
-20
-10
10
20
30
40
50
60
100
10
-1
10
KIRDB0048EA
-2
10
DEPENDENT ON NEP
10-3
10-4
10-3
10-2
10-5
10-6
KIRDB0056EA
10-5
10-7
4
10-
RELATIVE SENSITIVITY
10
RELATIVE SENSITIVITY
10-7
10-8
10-9
-5
10
19
10
(Typ.)
+30 V
10 p
10
Rf
300 k
RL
100 k
Ri
RELATIVE SENSITIVITY
10
20
30
40
50
60
-10
PbS
PbSe
1M
(Typ.)
10
KIRDC0012EA
KIRDB0054EA
TLO71
Rd
101
-20
0.01
Rf
)
Ri
10
20
30
40
50
60
-10
101
-20
RISE TIME
102
RELATIVE VALUE
DARK RESISTANCE
Vo = - i S Rd (1+
KIRDB0049EA
(Typ.)
103
As stated in 6-1-4, Temperature characteristics, the photo sensitivity and dark resistance of PbS and PbSe change as the
element temperature varies, so it is necessary to perform temperature compensation. One method is to use a thermistor appropriate to the PbS or PbSe being used. Hamamatsu
thermoelectrically-cooled PbS detectors (P2532-01, P268201) and thermoelectrically-cooled PbSe detectors (P2038-03,
P2680-03) incorporate a thermistor to keep the element temperature at a constant level. See Section 11, Cooling techniques, for information on how to use these cooled detectors. In
some cases, the PbS and PbSe are used with a detecting element warmed by a heater and kept at a constant temperature,
but this may reduce the photo sensitivity and accelerate deterioration of the detector element. Therefore, care should be taken
when using this method.
20
40
60
-20
10
KIRDB0055EA
20
RISE TIME
102
RELATIVE VALUE
DARK RESISTANCE
When load resistance RL and dark resistance Rd are equivalent, the maximum signal can be obtained. The relation between the RL/Rd and the signal level is shown in Figure 6-13.
80
60
40
20
10
20
0.1
100
RL/Rd
1
.
2
With respect to the S/N, it is much more efficient to use PbS and
PbSe with a small active area and introduce a converged light
to the detector elements, rather than using detector elements
with a large active area. Incident light may falls on the outside of
the active area or extraneous light may enter the active area
causing the S/N to drop. Take precautions against the optical
path of the incident light.
The noise levels in the PbS and PbSe suddenly increase when
the voltage applied to the detector elements exceeds a certain
threshold level. Also, since the signal level increases in proportion to the voltage, it is recommended that the detectors be used
at as low a voltage as possible within the rated maximum applied voltage described in the catalog.
mized when f =
KIRDB0137EA
21
[cm . Hz1/2/W]
hc 2Q
h
c
Q
: wavelength
: quantum efficiency
: Planck constant
: light speed
: background radiation flux
[No. of photons/cm2 . s]
7-1 Characteristics
D* =
To reduce the background radiant noise, it is necessary to employ a cold shield that restrains the field of view (FOV) and a
cooled band-pass filter that cuts off wavelengths other than the
wavelength of interest. The relation between FOV and D* is
shown in Figure 7-3.
WINDOW
1012
P7163 (InAs)
DETECTING
ELEMENT
11
10
KIRDC0033EA
f/number
FOV
0.5
10
10
D*
10
10
20
40
100
180
10
(deg)
22
10
KIRDB0138EA
Also, in the spectral response range for the InSb detector, noise
due to fluctuations in background light at a temperature of 300
K cannot be disregarded. If background radiant noise is
thought to be the only noise source, D* for the photovoltaic
detectors can be calculated using the following formula.
ij = 4kTB / Rsh
The InAs and InSb detectors are normally used at zero bias and
only Johnson noise (ij) is considered as a major source of
noise, which is expressed in terms of the following formula.
KIRDB0063EA
WAVELENGTH (m)
Some precautions when using InAs and InSb detectors are described below. Also see Section 11-1, Cooling by cryogen, for
cooling techniques using cryogen.
23
10
10
MCT
P5274
(-196 C)
10
InSb
P6606-310
(-60 C)
MCT
P5274-01
(-196 C)
MCT
P3257-10
(-196 C)
MCT
P2750
(-60 C)
108
10 12 14 16 18 20 22 24 26
1.24
c =
Eg (eV)
11
10
8-1 Characteristics
WAVELENGTH (m)
[m]
KIRDB0263EA
The noise of MCT and InSb detectors includes 1/f noise caused
by current noise, g-r noise by recombination of electrons and
holes, and Johnson noise as thermal noise. The 1/f noise is
dominant in the low frequency region and the g-r noise is dominant in the higher frequency region. The relation between noise
and frequency is shown in Figure 8-3. For MCT photoconductive detectors having sensitivity over 3 m, fluctuations in background radiation at 300 K cannot be ignored as noise. This type
of noise relates to FOV (field of view), and can be reduced by
making the FOV smaller.
1.6
100
1.2
1.0
0.6
300 K
0.4
0.2
0
UP TO 0 K
10
-0.2
NOISE (nV/Hz1/2)
0.8
(Typ.)
1.4
0.2
0.4
0.6
0.8
1.0
-0.4
10
100
1000
10000
KIRDB0087EA
COMPOSITION RATIO
Hg1-x Cdx Te
24
FREQUENCY (Hz)
KIRDB0074EA
1010
109
(Typ.)
1011
The D* and spectral response characteristics of MCT photoconductive detectors change with the detector element temperature. As the temperature increases, the D* decreases and
the spectral response shifts to the shorter wavelength region.
Figures 8-4 and 8-5 show the D* of an MCT photoconductive
detector designed for the 3 to 5 m region and the temperature
characteristic of the cut-off wavelength.
Figure 8-6 also shows the temperature characteristic of D* of
an InSb photoconductive detector.
(Typ.)
1012
-60
-50
-40
-30
-20
-10
108
-70
11
1010
D (500 K)
10
20
30
-10
108
-70 -60 -50 -40 -30 -20
10
KIRDB0140EA
temperature (P2750)
5.8
5.7
5.6
5.5
+VB
Cf
Ri
5.4
Rf
RL
+
Vo
MCT
is
5.2
5.3
-40
-20
20
40
Vo = - is .Rd . 1 +
Rf
Ri
-60
KIRDC0021EA
KIRDB0141EA
-80
5.0
-100
5.1
KIRDB0142EA
D (p)
D (cm Hz1/2/W)
10
25
S/N
NOISE N (ARB.UNIT)
10
15
20
25
KIRDB0091EA
26
9. Pyroelectric detector
INPUT OF
INFRARED BEAM
CHOPPER OPEN
CHOPPER CLOSED
+ + + +
-
+
-
+
-
+
+
- - - -
+ + + +
- - - -
+ + + +
- - - -
+ + + +
- - - -
+
+
- - - -
+
-
+
-
+ + + +
-
+ + + +
- - - -
TIME
KIRDB0042EA
The PZT is spontaneously polarized in the dark state. The element surface is always electrified, but it is neutralized by ions in
the air. When light enters the element and is absorbed, the
element temperature increases, resulting in a change in the
spontaneous polarization state. These changes are outputted
as a voltage change. Since the pyroelectric detector detects
light only when a temperature change in the element occurs, it
is necessary to use an optical chopper for measurement of still
objects. Figure 9-1 shows a schematic presentation of the pyroelectric effect.
SENSOR OUTPUT
0
Table 9-2 Characteristics of pyroelectric materials (p/C', r1/2 and thermal conductivity K are included for reference)
Material name
Volumetric
Curie
Pyroelectric
Dielectric
specific heat
temperature
coefficient
constant
p
TC
r
(10-8C cm-2 K-1) (J cm-3 K-1 )
(C)
Performance
exponent
Thermal
conductivity
K
(10-3 W cm1 K-1)
TGS
DTGS
LiTaO3
Sr 0.48 Ba 0.52
Nb2 O 6
49.5
61
618
115
38
18
54
380
3.5
2.7
2.3
6.5
2.4
3.5
3.1
2.3
4.3
6.0
1.4
0.73
24
26
10
14
6.4
6.5 Max.
PbTiO3 magnetic
PbTiO3 light distribution film
PZT (ceramic)
460
1.8
3.0
5.0
15
3.2
3.2
2.4
0.30
0.97
0.53
4.1
9.5
11
32
200
400
190
97
250
450
11.0
PVF 2
120
11
0.24
2.4
0.88
3.0
1.3
40
27
9. Pyroelectric detector
With this method, the surface charge on the pyroelectric element is output as current. The current responsivity Ri is expressed by the following equation.
Ao
Ri =
1 + 2 t 2
: Emissivity
: Angular frequency
: Pyroelectric coefficient
Ao : Active area
R : Combined resistance (R + Rg)
G : Heat conductivity
H : Calorific capacity
t : Thermal time constant (H/G)
The source follower circuit is generally used as a trans-impedance circuit. In this case, the voltage response Rv of the pyroelectric element is indicated by the equation shown below.
1+ t
1+ C R
Ao
Rv =
VOUT = Ri Rf =
AoR
G 1 + 2 t 2
Rf
(1 + 2 t 2 ) (1 + 2 e 2 )
Rf : Feedback resistance
+V
ip
Cp
Rf
2 - 1TL071
VOUT
+
3
PYROELECTRIC OBJECT
-V
ELECTRICAL INPUT END
Rs
: Emissivity
: Angular frequency
Ao: Active area
: Pyroelectric coefficient
R : Combined resistance (R Rg)
C : Composite capacity (C Cp+Cs)
G : Heat conductivity
H : Calorific capacity
t : Thermal time constant (H/G)
e : Electrical time constant (= C . R)
Rg: Resistor connected in parallel with pyroelectric element
Cp: Pyroelectric capacity
Cs : FET input capacity
Ao
+V
Rg
Cs
Cp
VOUT
ip
Rl
KPYRC0006EA
PYROELECTRIC ELEMENT
28
KPYRC0007EA
9. Pyroelectric detector
9-4-3 Field of view
The field of view (FOV) is defined as the angle where the sensitivity has fallen to 50 % of its maximum value. This is 100 for a
single element and 120 for a dual element.
9-4 Characteristics
10
Rg=1011
10
8 to 14 m
BAND-PASS FILTER
7 m
LONG-PASS FILTER
10
10
10
102
108
10-1
100
101
102
103
104
10-2
10
10-3
SILICON
10
4.3 m
BAND-PASS
FILTER
10
10
10
10
12
14
16
KPYRB0017EA
WAVELENGTH (m)
KIRDB0095EA
The sensitivity in relation to the chopping frequency is expressed by its relationship with the thermal time constant t, and
has the characteristic shown in Figure 9-6.
10
-5
10
10-6
-7
-1
10
10
10
10
10
10
-2
10
KPYRB0016EA
10-8
-3
10
10
-4
29
9. Pyroelectric detector
(b) Using a single power supply
+V
+V
C2
C1 R1
R2
R3
+V
+V
A1
+
RL
Low-cut f1=
A2
High-cut=
1
2C1R1
1
2C2R2
R4
R3=R4
KIRDC0023EA
The equivalent circuits for the single element and dual element
pyroelectric detectors are shown in Figure 9-8 (b). The dual
element model is configured of two series-connected pyroelectric elements having opposite polarities, which utilize the cancellation effect of charges generated by background temperature variations such as by sunlight and external disturbance
light and by vibration, thus preventing faulty operation. The
single element type is generally combined with a chopper for
use of radiation thermometers, etc. The dual type is mainly used
for detection of moving objects such as human body sensing.
+V
VOUT
Rg
PYRO
GND
+V
+V
C1
R1
C2
R2
PYRO
+
VOUT
Rg
PYRO
Rg
Rs
GND
-V
KPYRC0009EA
KPYRC0008EA
DETECTOR
Basic operating circuits are shown in Figure 9-9 (a) with preamplifiers using two power supplies and Figure 9-9 (b) with preamplifiers using a single power supply.
The optimum voltage to be applied to the pyroelectric element is
3 to 10 V.
Frequency responses of the amplifiers (a) and (b) are as expressed by formulas in the figures below.
A1
Low-cut f1=
A2
+
High-cut=
1
2C2R2
1
2C1R1
+V
+V
R2
C1 R1
+V
PLASTIC OR
RUBBER GUARD
C2
-V
-V
RL
30
KPYRC0010EA
9. Pyroelectric detector
Parameter
1. Detection distance
d1, d2
2. Field of view
(1) Horizontal Center
Upper & lower
(2) Vertical
Center
Upper & lower
1, 2, 3, 4, etc
5, 6, 7, 8, etc
0
0
9, 10, etc
ab
3. Lens dimensions
4. Lens material
5. Radius of curvature and length of lens
R, L
8. Installation height
9. Installation angle
h
d1
d2
FOCAL LENGTH,
RADIUS OF CURVATURE, LENGTH
b2
b1
2
4
a2
a1
a
31
9.2 0.3
8.1 0.2
WINDOW
5.5 0.2
4.3 0.2
0.4
LEAD
30 MIN.
3.3 0.2
PbS
PbSe
6.1 0.2
Si
5.1 0.2
KIRDA0041EE
Si (N)
Si (P)
PbS
PbS
32
N2
10
10
-6
Ne
10
O2
Ar
-10
10
100
TEMPERATURE (K)
H2
-2
KIRDB0143EA
166 0.5
35
20
WINDOW
KIRDA0020EA
17.3 2
16 1
102
74.6
SENSITIVE
SURFACE
He
COOLANT
FILL PORT
106
33
Qc
COOLING
Tc
P
When an electric current flows to a certain type of semiconductor, one end of the semiconductor is cooled and the other end is
heated. This phenomenon is called "Peltier Effect". This Peltier
effect can be used to cool the detector elements. (Figure 11-3)
HEATING
Th
(6) When using a temperature controller, take into consideration the cooling capability of the cooling element, and
set a control temperature that meets the conditions of
the ambient temperature. Setting a temperature higher
than the cooling capability T will prevent stable temperature control. Hamamatsu provides the A3179 series
heatsinks and the C1103 series temperature controllers.
Qh
20
5
0
HEATSINK (LARGE)
-5
-10
-15
HEATSINK (SMALL)
10
-20
0.2
0.4
0.6
0.8
1.2
1.4
1.6
KIRDB0144EA
100
0.7 A
1.0 A
50
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RIPPLE
(4) If a current higher than the specified value (1.5 A for onestage thermoelectric coolers, 1.0 A for two-stage and
15
KIRDC0034EA
34
(Ta=25 C)
25
KIRDB0145EA
AMP
CURRENT
CIRCUIT
COMPARATOR
TO COOLER
CURRENT
KIRDC0008EA
AC INPUT
WINDOW
DETECTOR
THROTTLING VALVE
VACUUM
NYLON RIBBON
CORE
HEAT CONVERTER
KIRDC0035EA
35
The LN has the following relationship with the NEP of the sensor:
dL
Also, the equation dT T = T1 expresses the temperature coefficient of the radiance of an object at temperature T1, and L is
obtained by accumulating the spectral radiant emittance
across the observation wavelength area (1 to 2).
NEP = ToLNAo /
2
L=
1
Md
The detectors used for radiation thermometers must be selected based on the temperature and material of the object to
be measured. For example, the glass has a peak wavelength of
emissivity near 5 m and plastic films near 3.4 m or 8 m.
Therefore, detectors sensitive to such wavelength regions
must be selected for those objects. Also, as a result of recent
developments in infrared fibers, infrared detectors combined
with infrared fibers are used in diverse applications, including
temperature measurement of hot metal detectors (HMD) and
other objects which rotate, have a complex internal structure
and are located in dangerous environments such as vacuums
and high-pressure gases.
10
10
T(K)=6000
5000
4000
3000
101
2000
100
10
10
-2
10
1500
-1
-3
1000
800
600
400
10-4
273
10-5
200
10-6
10
-7
104
10-8
0.1
.2
.4 .6 .81
4 6 810
20
40 60 80100
WAVELENGTH (m)
Compared to other temperature measurement methods, radiation thermometers have the following features:
T = T1
LN
NET = dL
dT
Objects emit infrared radiation based on their own temperatures if they are above the absolute zero degree temperature.
Figure 12-1 shows the radiant energy of a black body. Actually,
the quantity of infrared rays emitted from an object is not necessarily determined based on the temperature. The emissivity e
must be compensated for. In the case of a black body, e = 1.
Figure 12-2 shows the emissivity of various objects. Since the
emissivity e is determined by the temperature and wavelength
of an object, care should be taken when measuring the absolute temperature of an object.
Generally, the noise equivalent temperature differential (NET)
is used as an index to express the thermal resolution. The
NET is defined as follows:
12-2 LD monitors
Optical power meters are used for measuring light intensity and
find a wide variety of applications, such as in optical fiber communications and lasers. Optical fiber communications are classified into short, middle and long distance communications systems. For long distance optical communications systems, infrared beams in the wavelength region from 1.3 m to 1.5 m that
provide less optical fiber transmission loss are employed.
InGaAs PIN photodiodes, etc. are used for optical power meters
to measure optical fiber transmission loss, relay quality, laser
power, etc. The characteristics particularly required for the optical power meter are linearity and uniformity. Occasionally, a
cooled-type detector is used to reduce the noise level so that
low power light can be measured with low noise.
KIRDB0014EB
36
0.80 PAINT
0.8
0.7
0.75
0.64
SUN LIGHT
60
FLAME
40
20
80
0.5
0.45
0.4
EMISSIVITY e
0.6
0.9
100
1.0
0.2
0.21
0.31
WAVELENGTH (m)
0.3
0.35
KIRDB0147EA
KIRDC0036EA
100
GLASS TRANSMITTANCE
GLASS FILTER
TRANSMITTANCE
80
60
GLASS REFLECTANCE
40
20
0.10
0.1
0
2
10 11 12
WAVELENGTH (m)
(CO, SO, NO2), fuel leakages (CH4, C3H2), and so on. Ingredient
analyzers are used to measure CO2 (4.3 m) and saccharine
(3.9 m) in carbonated drinks (soft drinks, beer, etc.). Figure
12-5 shows typical absorbed spectra of various gases.
KIRDB0146EA
37
NO
(5.3)
109
H2O
(1.4)
Z
CONDENSATION SYSTEM
CO
(4.7)
OBJECT
HC
(3.4)
SO2
(4)
DETECTING ELEMENT
CO2
(4.3)
H2O
(1.9)
1010
108
2
WAVELENGTH (m)
KIRDB0148EA
KIRDC0037EA
VISUAL CHANNEL
VISIBLE
OBJECT
LINING MIRROR
X-SYNC
IR
SCANNING
DRIVER
FRAMING MIRROR
LIQUID N2
FRAMING
DRIVER
IR
FOLDING MIRROR
X-SYNC
TO
DISPLAY
UNIT
VIDEO
PREAMPLIFIER
InSb or HgCdTe
DETECTOR
Y-SYNC
KIRDC0038EA
38
Surveys for soil, water resources, water currents, volcanos, meteorological phenomena, etc.
Medical use
Security use
Monitor for abnormal heat leakage from blast furnace, boiler, heat treatment furnace, etc. Fire
detection, intruder detection, etc.
Industrial use
1 m
0.8 to
10 m
0.8 m
CLOUD DATA
AG
IM
METEOROLOGICAL DATA
TOPOGRAPHY
RICH PLANKTON
AGRICULTURE
REGION
WATER
RESOURCE
MINERAL RESOURCE
(TEMPERATURE DATA)
LAND USE
FOREST RESOURCE
0.45 to
2 to 3
DA
TA
IS
GE)
EOPS
STER WARD IMA
(FOR
KIRDC0039EA
LAND STATION
SATELLITE ADVANCING
DIRECTION
IS
AGE)
EOPS
STERRWARD IM
(REA
E
TIIMAG
MUL CTRUM
SPE
By making use of the absorption wavelength inherent to organic matter, it is possible to sort agricultural crops (such as
potatoes, tomatoes, onions and garlic) from clods and stones.
InGaAs PIN photodiodes and PbS photoconductive detectors
are used for such sorting. Also, those detectors are used to
sort products on the belt conveyor of a factory by detecting the
differences of temperature, emissivity, transmittance.
39
-10
(6 m AHEAD, TIPTOE)
-20
-30
(1.5 m AHEAD,
OUTRIGHT DASH)
-40 (6 m AHEAD,
OUTRIGHT DASH)
1.0
10
100
0.1
-50
0.01
KPYRB0006EA
Summer clothes
(2 outer layers, 2
under layers)
Winter clothes
(4 outer layers, 3
under layers)
C
C
C
C
C
C
C
C
32.0
30.9
29.3
29.0
30.5
31.0
28.6
28.4
C
C
C
C
C
C
C
C
31.2
23.4
20.9
20.9
22.2
20.4
21.3
21.3
Face
Back of head
Chest
Back
Stomach
Hip
Thigh
Shin
1S1588
POWER SUPPLY (5 V)
VR2
500 k
10
51 k
51 k
2M
2M
+
47
P4488
103
8
IC1.1/2
+ 4
3
2
103
1
47 51 k
5
51 k
51 k
7
IC1.1/2
+
47
51 k
51 k
10
51 k
3 + 8
1
IC1.1/2
2
GROUND
10 k
100
10 k 2
5 T2
B
T1
IC3 Q
CD
5 +
7
3 4 8
VR1
IC1.1/2
500 k
- 4
6
2SC1815
10 k
OUTPUT
1S1588
51 k
CdS
PC358
KPYRC0012EA
40
Thermal type detectors are mainly used over a wide wavelength region of from 2.5 to 25 m. For measurements requiring high sensitivity and high-speed sampling or using small
amounts of samples, MCT (HgCdTe) photoconductive detectors and InSb photovoltaic detectors are used.
Infrared detectors used as the heart of the FT-IR spectrophotometers must have the following characteristics.
41
References
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
42
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2004 Hamamatsu Photonics K.K.
43