Professional Documents
Culture Documents
2 w 2
W (neff n22 )1/2
(neff n22 T ((n12 n22 )
• Here “w” and “d” are the width and
thickness, respectively, of the active layer
and n1 and n2 are refractive indices inside
and outside the cavity, respectively.
• a) Consider a 1300 nm InGaAsP laser
diode in which the active region is 0.1 μm
thich, 1.0 μm wide and 250 μm long with
refractive indices n1 =3.55 and n2 = 3.20.
What are the transverse and lateral
optical field confinement factors?
b) Of 4.11
• Given that the total confinement
T is
factor L
, what is the gain
threshold if the effictive absorption
coefficient is = 30/cm and the
facet reflectivities are R1= R2 =
0.31?
Solution of Problem 4.11
Problem 4.12
• A GaAs laser emitting at 800 nm has
t