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  • Celda MJ - Estructura

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    This document describes the layer structure and doping concentrations of three photovoltaic cells stacked to form a multi-junction solar cell. The top cell is a GaInP/GaInP cell, the middle cell is a GaAs/GaAs cell, and the bottom cell is a Ge/Ge cell. Each cell consists of an n-doped emitter layer, a p-doped base layer, and p-doped back surface field (BSF) layers separated by tunnel junctions. References are provided for material analysis techniques and previous related work achieving greater than 30% conversion efficiency with similar multi-junction cell designs.

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    This document describes the layer structure and doping concentrations of three photovoltaic cells stacked to form a multi-junction solar cell. The top cell is a GaInP/GaInP cell, the middle cell is a GaAs/GaAs cell, and the bottom cell is a Ge/Ge cell. Each cell consists of an n-doped emitter layer, a p-doped base layer, and p-doped back surface field (BSF) layers separated by tunnel junctions. References are provided for material analysis techniques and previous related work achieving greater than 30% conversion efficiency with similar multi-junction cell designs.

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    22 views1 page

    Celda MJ - Estructura

    Uploaded by

    malaraca9187
    This document describes the layer structure and doping concentrations of three photovoltaic cells stacked to form a multi-junction solar cell. The top cell is a GaInP/GaInP cell, the middle cell is a GaAs/GaAs cell, and the bottom cell is a Ge/Ge cell. Each cell consists of an n-doped emitter layer, a p-doped base layer, and p-doped back surface field (BSF) layers separated by tunnel junctions. References are provided for material analysis techniques and previous related work achieving greater than 30% conversion efficiency with similar multi-junction cell designs.

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    of 1

    Capa de contacto Contacto frontal

    GaAs (n+) [Zn], 0.5µm Au–Ag, 0.1–8µm (2)


    6x1018 cm-3 (1)
    Capa antirreflectante
    TiO2 / Al2O3 (2)

    Pasivación AlInP2 (n+) 2x1018 cm-3 [Si], 0.03 µm (3)


    Emisor GaInP2 (n+) 2x1018 cm-3 [Si], 0.05 µm (3)
    Celda “TOP”
    Base GaInP2 (p) 1.5x1017 cm-3 [Zn], 0.55 µm (3)

    BSF GaInP2 (p+) 3x1018 cm-3 [Zn], 0.05 µm (1)


    Juntura túnel GaInP2 (p++/n++) (8/10)x1018 cm-3 [Zn/Si], 0.015/0.015 µm (4)

    Pasivación AlInP2 (n+) 1x1019 cm-3 [Si], 0.05 µm (4)


    Emisor GaAs (n+) 2x1018 cm-3 [Si], 0.1 µm (4)
    Celda “MIDDLE” Base GaAs (p) 1x1017 cm-3 [Zn], 3.0 µm (4)

    BSF GaInP2 (p+) 2x1018 cm-3 [Zn], 0.1 µm (4)


    Juntura túnel GaAs (p++/n++) (8/10)x1018 cm-3 [Zn/Si], 0.015/0.015 µm (3)

    Buffer AlGaAs (n+) [Si]


    Emisor Ge (n+) [As] (5)

    Celda “BOTTOM” Base Ge (p) 2x1017 (5)

    Contacto posterior
    Au–Ag, 0.1–8µm (2)

    1. K.A. Bertness, S.R. Kurtz, D.J. Friedman, A.E. Kibbler, C. Kramer, J.M. Olson, “29.5% efficient
    GaInP/GaAs tandem solar cells” Applied Physics Letters 65, 989 (1994).
    2. Estimación en base a los materiales detectados mediante análisis dispersivo de rayos X
    (EDAX) sobre celdas Emcore ATJ
    3. T. Takamoto, E. Ikeda, H. Kurita, “Over 30% efficient InGaP/GaAs tandem solar cells”, Applied
    Physics Letters 70, 381 (1997).
    4. N. Dharmarasu, A. Khan, M. Yamaguchi, T. Takamoto, T. Ohshima, H. Itoh, M. Imaizumi, S.
    Matsuda, “Effects of proton irradiation on n+ p InGaP solar cells”, Journal of Applied Physics 91,
    3306 (2002).
    5. N.H. Karam, R.R. King, B.T. Cavicchi, D.D. Krut, J.H. Ermer, M.Haddad, L. Cai, D.E. Joslin, M.
    Takahashi, J.W. Eldredge, W.T. Nishikawa, D.R. Lillington, B.M. Keyes, R.K. Ahrenkiel,
    “Development and Characterization of High-Efficiency GaInP/GaAs/Ge Dual- and Triple-
    Junction Solar Cells”, IEEE Transactions on Electron Devices 46, 2116 (1999).

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