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JFET VHF/UHF Amplifiers

NChannel Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage V
DS
30 Vdc
DrainGate Voltage V
DG
30 Vdc
GateSource Voltage V
GS
30 Vdc
Drain Current I
D
100 mAdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation @ T
A
= 25C
Derate above 25C
P
D
350
2.8
mW
mW/C
Storage Channel Temperature Range T
stg
65 to +150 C
3 DRAIN
1 SOURCE
2
GATE
3 DRAIN
2 SOURCE
1
GATE
STYLE 22 STYLE 23
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(I
G
= 1.0 Adc, V
DS
= 0)
V
(BR)GSS
30 Vdc
GateSource
(V
DS
= 15 Vdc, I
D
= 200 Adc) BF245
(1)
BF245A, BF244A
(2)
BF245B, BF244B
BF245C
V
GS
0.4
0.4
1.6
3.2

7.5
2.2
3.8
7.5
Vdc
GateSource Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
V
GS(off)
0.5 8.0 Vdc
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
I
GSS
5.0 nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0) BF245
(1)
BF245A, BF244A
(2)
BF245B, BF244B
BF245C
I
DSS
2.0
2.0
6.0
12

25
6.5
15
25
mAdc
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev. 0
1 Publication Order Number:
BF245A/D
BF245A
BF245B
BF244A, BF244B
CASE 2911, STYLE 22
TO92 (TO226AA)
1
2
3
BF245, BF245A,
BF245B, BF245C
CASE 2911, STYLE 23
TO92 (TO226AA)
1
2
3
BF245A BF245B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) Y
fs
3.0 6.5 mmhos
Output Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) Y
os
40 mmhos
Forward Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz) Y
fs
5.6 mmhos
Reverse Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz) Y
rs
1.0 mmhos
Input Capacitance (V
DS
= 20 Vdc, V
GS
= 1.0 Vdc) C
iss
3.0 pF
Reverse Transfer Capacitance (V
DS
= 20 Vdc, V
GS
= 1.0 Vdc, f = 1.0 MHz) C
rss
0.7 pF
Output Capacitance (V
DS
= 20 Vdc, V
GS
= 1.0 Vdc, f = 1.0 MHz) C
oss
0.9 pF
Cutoff Frequency
(3)
(V
DS
= 15 Vdc, V
GS
= 0) F
(Yfs)
700 MHz
3. The frequency at which g
fs
is 0.7 of its value at 1 kHz.
f, FREQUENCY (MHz)
30
10
b
is
@ I
DSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (y
is
) Figure 2. Reverse Transfer Admittance (y
rs
)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (y
fs
) Figure 4. Output Admittance (y
os
)
g
i
s
,

I
N
P
U
T

C
O
N
D
U
C
T
A
N
C
E

(
m
m
h
o
s
)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
b
i
s
,

I
N
P
U
T

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
g
f
s
,

F
O
R
W
A
R
D

T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E

(
m
m
h
o
s
)
|
b
f
s
|
,

F
O
R
W
A
R
D

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
g
r
s
,

R
E
V
E
R
S
E

T
R
A
N
S
A
D
M
I
T
T
A
N
C
E

(
m
m
h
o
s
)
b
r
s
,

R
E
V
E
R
S
E

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
o
s
,

O
U
T
P
U
T

A
D
M
I
T
T
A
N
C
E

(
m
h
o
s
)
b
o
s
,

O
U
T
P
U
T

S
U
S
C
E
P
T
A
N
C
E

(
m
h
o
s
)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10 20 30 50 70 100 200 300 500 7001000
b
is
@ 0.25 I
DSS
g
is
@ I
DSS
g
is
@ 0.25 I
DSS
b
rs
@ I
DSS
0.25 I
DSS
g
rs
@ I
DSS
, 0.25 I
DSS
g
fs
@ I
DSS
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
os
@ I
DSS
g
os
@ 0.25 I
DSS
g
fs
@ 0.25 I
DSS
BF245A BF245B
http://onsemi.com
3
Figure 5. S
11s
Figure 6. S
12s
0 350 340 330 10 20 30
180 190 200 210 170 160 150
32
31
30
29
28
27
26
25
24
23
22
40
50
60
70
80
90
100
110
120
130
140
0 350 340 330 10 20 30
180 190 200 210 170 160 150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0 350 340 330 10 20 30
180 190 200 210 170 160 150
32
31
30
29
28
27
26
25
24
23
22
40
50
60
70
80
90
100
110
120
130
140
0 350 340 330 10 20 30
180 190 200 210 170 160 150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
600
700
800
900
500
I
D
= I
DSS
, 0.25 I
DSS
900
500
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
900
100
500
700
300
400
500
600
700
800
Figure 7. S
21s
Figure 8. S
22s
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25C, Data Points in MHz)
BF245A BF245B
http://onsemi.com
4
f, FREQUENCY (MHz)
10
g
ig
@ I
DSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (y
ig
) Figure 10. Reverse Transfer Admittance (y
rg
)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DG
= 15 Vdc, T
channel
= 25C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (y
fg
) Figure 12. Output Admittance (y
og
)
g
i
g
,

I
N
P
U
T

C
O
N
D
U
C
T
A
N
C
E

(
m
m
h
o
s
)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
b
i
g
,

I
N
P
U
T

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
g
f
g
,

F
O
R
W
A
R
D

T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E

(
m
m
h
o
s
)
b
f
g
,

F
O
R
W
A
R
D

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
g
r
g
,

R
E
V
E
R
S
E

T
R
A
N
S
A
D
M
I
T
T
A
N
C
E

(
m
m
h
o
s
)
b
r
g
,

R
E
V
E
R
S
E

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
o
g
,

O
U
T
P
U
T

A
D
M
I
T
T
A
N
C
E

(
m
m
h
o
s
)
b
o
g
,

O
U
T
P
U
T

S
U
S
C
E
P
T
A
N
C
E

(
m
m
h
o
s
)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000
0.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300 500 700 1000
b
ig
@ 0.25 I
DSS
b
ig
@ I
DSS
g
rg
@ 0.25 I
DSS
g
fg
@ I
DSS
g
fg
@ 0.25 I
DSS
b
rg
@ 0.25 I
DSS
b
og
@ I
DSS
, 0.25 I
DSS
g
og
@ I
DSS
g
og
@ 0.25 I
DSS
0.2 0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
b
rg
@ I
DSS
0.25 I
DSS
g
ig
@ I
DSS
, 0.25 I
DSS
b
fg
@ I
DSS
BF245A BF245B
http://onsemi.com
5
0 350 340 330 10 20 30
180 190 200 210 170 160 150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0 350 340 330 10 20 30
180 190 200 210 170 160 150
32
31
30
29
28
27
26
25
24
23
22
40
50
60
70
80
90
100
110
120
130
140
0 350 340 330 10 20 30
180 190 200 210 170 160 150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0 350 340 330 10 20 30
180 190 200 210 170 160 150
32
31
30
29
28
27
26
25
24
23
22
40
50
60
70
80
90
100
110
120
130
140
Figure 13. S
11g
Figure 14. S
12g
Figure 15. S
21g
Figure 16. S
22g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
500
600
700
800
900
900
600
700
800
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
900
100
900
I
D
= 0.25 I
DSS
I
D
= I
DSS
1.5
100
400
500
600
700
800 900
I
D
= I
DSS
, 0.25 I
DSS
COMMON GATE CHARACTERISTICS
SPARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25C, Data Points in MHz)
BF245A BF245B
http://onsemi.com
6
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---
1
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
BF245A BF245B
http://onsemi.com
7
Notes
BF245A BF245B
http://onsemi.com
8
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BF245A/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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