B ngun ATX ton tp: Mch cp trc dng 2

Dng 2: Hi tip gin tip

Mch c cp ngun 300Vdc t mch nn/lc s cp.

Tc dng linh kin:
Rhv : in tr hn ch, in p ra sau n cn khong 270V.
R3, R5 : nh thin (mi) cho Q3.
Q3 : Cng sut standby, y dng Mosfet 2N60.
R4 : To hi tip m in p, s dng st p trn R4 nh mt sensor kim tra
dng qua Q3, thng qua s iu chnh Q3 hot ng n nh.
ZD1 : n nh in p chn G, nhm bo v khng Q3 m ln, trnh cho Q3
b nh thng.
C34 : T nht, bo v Q3 khng b nh thng khi chu in p m cc ln ca
thi k qut ngc.
R9 : in tr phn p, to s n nh (tng i) cho chn G Q3 v C Q4.
L1 : Ti Q3. L2 : Cun hi tip.
Q4 : Mc phn p cho chn G Q3, ng vai tr o pha in p hi tip.
D5 : Nn hi tip theo kiu mch nn song song nhm to in p (+) im A.

C8 : Lc in p hi tip.
U1 : Mch so quang, hi tip m n nh in p STB.
R17 : in tr nng cao mc thp, vi mc ch ngt in p hi tip ti chn B
Q4 khi in p ny gim xung cn ~ 2V.
C4, R6, D3 : Kh in p ngc, chng ngt dao ng.

Nguyn l:
in p 300V t mch nn/lc s cp qua Rhv cn ~270V cp cho mch. in
p ny chia lm 2 ng :
ng 1 : Vo im PN6, ra PN4 ti chn D Q3.
ng 2 : Qua R3, R5 kt hp phn p R9 nh thin cho Q3, ng thi cp cho
Q4 (chn C). Cc bn hy Q4 mc phn p cho G Q3 nn nu Q4 bo ha
th in p ti G Q3 ~ 0, Q3 kha.
Nh nh thin (mi) bi R3, R5 nn Q3 m. Dng in i t 270V qua L1, qua
DS Q3 xung mass, kn mch. V dng ny i qua L1, theo c tnh ca cun
cm (lun sinh ra dng chng li dng qua n theo hin tng cm ng in
t) nn dng qua L1 khng t mc bo ha ngay m tng ln t t. V vy t
trng sinh ra trn li bin p STB cun tng t t (t trng ng).

Theo nh lut cm ng in t Lenz, t trng tng t t trn li bin p STB
s lm pht sinh trn tt c cc cun dy ca bin p 1 sut in ng cm ng.

in p cm ng trn L2 c nn bi D5 v lc bng C8 ly ra in p 1 chiu
cc tnh m (+) im A, c n nh (tng i) bng R16, n nh ph
thuc vo tch s T = R16xC8 (thi hng hng s thi gian tch thot ca
mch RC)

in p ti im A li qua CE U1 (so quang) ti chn B ca Q4. V l in p
dng nn n lm cho Q4 bo ha. Khi Q4 bo ha th in p ti chn C Q4 ~
0, m chn C Q4 li ni vo chn G Q3 nn UgQ3 ~ 0 lm cho Q3 kha.

Khi dng qua Q3 kha, dng qua L1 mt i, t trng trn L1 cng mt i lm
cho t trng trn li bin p = 0 dn n in p cm ng trn cc cun day
bin p STB = 0. D nhin in p cm ng trn cun L2 mt.

V in p trn L2 mt nn khng a ra p (+) ti im A na. Tuy vy v c
C8 np (lc trc) nn gi n x lm cho in p ti im A ko mt ngay,
vic C8 x s duy tr mc (+) chn B Q4 thm 1 thi gian na v Q4 tieps tc
bo ha, Q3 tip tc kha. Ti khi in p (+) do C8 x ko ln (2V) th R17
s ngt in p hi tip, chn B Q4 s gim v O, Q4 kha. Khi Q4 kha th
in p nh thin do R3, R5 c phc hi v Q3 li m. Mt chu trnh
m/kha li bt u.

Tn s dao ng ca mch:
c quyt nh bi L2/C8/R16. y l cng hng ni tip nn khi xy ra
cng hng th in p trn L2 l max, khi dng in p ti im A l max
cho R17 dn, Q4 bo ha. Nu mt cng hng th in p trn L2 min, in
p im A min khng thng li st p trn R17 lm Q4 kha, Q3 m (c
nh) v dng qua L1 s l c nh ko to ra c t trng ng lm in p
cm ng trn tt c cc cun ca bin p STB mt i. Ni cch khc th tn s
dao ng ca mch chnh bng 1/2xsqrt(L2xC8R16).

Thc t, khi Q3 kha, dng qua L1 ko mt ngay do t trng trn li bin p
vn cn (nh) lm xut hin in p cm ng trn L1 vi chiu (-) D Q3 ,in
p ny tn ti trong thi gian cc ngn (ging nh qut ngc cng sut dng
tivi, CRT) nn c gi tr rt ln (~ 800V vi ngun i mi) lm pht sinh 2 hu
qu :

Tc dng ca C4, R6, D3 ging nh mch hi tip trc tip.

in p cm ng trn L3 c sinh ra nh t trng bin i do Q2 lin tc bo
ha/kha. in p ny c nn/lc ly ra in p standby.

ng 1 : Nn/lc bi D9/C15 ra 12V nui dao ng, khuych i kch thch.
ng 2 : Nn/lc bi D7/C13/C18 5V cho dy tm, h p qua tr cho PS-ON,
nui mch thut ton to PG.

n nh in p : S dng OPTO U1.
Nu in p ra tng (v tn s dao ng thay i) th ngun ra 5V tng ln. Khi
ngun cp cho cc iu khin ca U1 (TL431) t 5V qua R27 tng ln lm
cho 431 m ln.

thy 431 mc ni tip vi diode pht ca OPTO, v 431 m ln nn dng
qua diode (t 5V STB qua R30, qua diode, qua 431 xung mass) tng ln,
cng sng ca diode tng tc ng ti CE U1 lm in tr Rce U1 gim,
in tr ny li mc ni tip t im A v R17 nn lm cho in p hi tip v
B Q4 (qua R17) tng ln, kt qu l Q4 bo ha/Q3 kha sm hn thng l.
Ni cch khc th thi gian m ca Q3 trong 1 giy nh s gim xung lm in
p ra gim.

Nu in p ra gim (v tn s dao ng thay i) th ngun ra 5V gim. Khi
ngun cp cho cc iu khin ca U1 (TL431) t 5V qua R27 gim ln lm cho
431 m nh.

thy 431 mc ni tip vi diode pht ca OPTO, v 431 m ln nn dng
qua diode (t 5V STB qua R30, qua diode, qua 431 xung mass) gim xung,
cng sng ca diode gim tc ng ti CE U1 lm in tr Rce U1 tng,
in tr ny li mc ni tip t im A v R17 nn lm cho in p hi tip v
B Q4 (qua R17) gim xung, kt qu l Q4 bo ha/Q3 kha mun hn thng
l. Ni cch khc th thi gian m ca Q3 trong 1 giy nh s tng ln lm in
p ra tng.

n nh in p : S dng in tr hi tip m in p R4.
Nu Q3 m ln (lm p ra cao) th dng qua R4 tng. St p trn R4 (tnh bng
UR4 = IQ3 x R4) tng ln. s thy st p ny a v chn B Q4 qua R8
lm Ub Q4 tng, Q4 s bo ha, Q3 kha sm hn thng l. Ni cch khc th
thi gian m ca Q3 trong 1 giy nh s gim xung lm in p ra gim.

Nu Q3 m nh (lm p ra thp) th dng qua R4 gim. St p trn R4 (tnh
bng UR4 = IQ3 x R4) gim xung. s thy st p ny a v chn B Q4
qua R8 lm Ub Q4 gim, Q4 s bo ha, Q3 kha mun hn thng l. Ni
cch khc th thi gian m ca Q3 trong 1 giy nh s tng ln lm in p ra
tng.

Hong Trng Ngha - Hi Dng - htnghiahd@gmail.com