www.nanohub.

org
NCN
ECE606: Solid State Devices ECE606:SolidStateDevices
Lecture16:CarrierTransport
MuhammadAshraful Alam
alam@purdue.edu
AlamECE606S09
1
Outline
1) Overview
2) Drift Current 2) DriftCurrent
3) PhysicsofMobility
4) High field effects 4) Highfieldeffects
5) Conclusion
REF:AdvancedDeviceFundmentals,Pages175 192
AlamECE606S09
2
CurrentFlowThroughSemiconductors
I
I G V =
V
C i
q n A v =
Dependsonchemicalcomposition,
crystalstructure,temperature,doping,etc.
Carrier
Density
velocity
y , p , p g,
QuantumMechanics+EquilibriumStatisticalMechanics
Encapsulatedintoconceptsofeffectivemasses
Transportwithscattering,nonequilibriumStatisticalMechanics
l d d f d ff h
andoccupationfactors(Ch.14)
AlamECE606S09
3
Encapsulatedintodriftdiffusionequationwith
recombinationgeneration(Ch.5&6)
NonequilibriumSystems
Chapter6 Chapter5
vs.
I
V
AlamECE606S09
4
SummaryofTransportEquations
( )
+
= +
D A
D q p n N N
1
I
1
N N N
n
r g
t q

= +

J
J E D
V
1
= + J
P P P
p
r g
J = +
N N N
qn E qD n
V

P P P
g
t q
P P P
qp E qD p = J
AlamECE606S09
5
Outline
1) Overview
2) Drift Current 2) DriftCurrent
3) PhysicsofMobility
4) High field effects 4) Highfieldeffects
5) Conclusion
AlamECE606S09
6
MeaningofEffectiveMass
0
m

2 2
2
0
( ) (
2
)

+ =


+

e cry xt s
U U
d
x x E
m dx
*
m
n
2 2
* 2
)
2
(

+ =

ext
U x
d
E
d
AlamECE606S09
7
0
2
2


dx m
DriftbyElectricfield.
J qn E
n n
J qn = E
* *
( )

=
n n
n
d m m
q
dt
E
*
( ) 1

=



n
t
n
q
t e
m
E
x
x


n
m
x
x
x
AlamECE606S09
8
DriftbyElectricfield.
( ) 1

=

n
t
n
q
t e E
*
( ) 1 =



n
t e
m
E
x
x
x
x
*
( , 1-2 ps)

=
n
n
t
q
m
E
friction

n
E
1
( ) E
( ) E
n n
J qn = E

time
2
( ) E
AlamECE606S09
9
time
(Theoryvalidoncet>12ps)
Outline
1) Overview
2) Drift Current 2) DriftCurrent
3) PhysicsofMobility
4) High field effects 4) Highfieldeffects
5) Conclusion
AlamECE606S09
10
MobilityandPhysicsofScatteringTime
x
x
x
x
x
x
*

=
n
n
n
q
m
0
m
n
*
m
n
m
2
1 *
2
( ) ( ) ( )

U d
AlamECE606S09
11
FermisGoldenrule
1
( ) ( ) ( )

n
x U x x dx
PhononandIonizedImpurityScattering
Ionizedimpurity
0
m
3 2
~
n
T
N

Higher temperature
D
N
*
n
m
Highertemperature,
morephononscattering
3 2
~
n
T

AlamECE606S09
12
MultipleScatteringEvents
*
m
Ionizedimpurity
n
m
Phononscattering
others.
1 1 1 1
ph II n s
= + + +

1 1 1
p II n h

= +

*
1
n
n n
m
q
=
II
n
II
ph
ph

=
+
ph II

= +


n n
q
min min
I h I p

= +


+

( )
0
min

= +

AlamECE606S09
13
MatthessionRule.
( )
min
0
1
I
N N

+

ModelforIonizedimpurityScattering
*
m
0,n

= +

n
m
( )
,mi
0,
n
1
n
n
I n
n
N N



= +

+

,min n

AlamECE606S09
14
TemperaturedependentMobility
3 2
~
n n
T

AlamECE606S09
15
Outline
1) Overview
2) Drift Current 2) DriftCurrent
3) PhysicsofMobility
4) High Field Effects 4) HighFieldEffects
5) Conclusion
AlamECE606S09
16
MobilityatHighFields?
0
1 *

=
N
N
q
E E E
1 *
1



+




N
n
N
n
C
m
E E E
E
E
x
x
x
x

( ) E
Whatcausesvelocity
saturationathighfields?
E
Wheredoesallthemobilityformula
in device simulator come from?
E
AlamECE606S09
17
E
indevicesimulatorcomefrom?
c
E
VelocitySaturationinSi/Ge
1
0 0 J J J
+
= = = E
1
2 1 c
J J J J
+
= > E E
3 2 c
J J J J
+
= > E E
J J J J
+
= E E
AlamECE606S09
18
4 3 c
J J J J = E E
VelocityOvershoot&IntervalleyTransfer
Largerm*
Smaller m* Smallerm
AlamECE606S09
19
Whattypeofscatteringwouldyouneedforintervalleytransfer?
DopingdependentResistivity
J
V
= J E
( ) = +
n p
q n p J E
11
( )
n p
q n p

=
+
1
for ntype = for n-type
n D
q N
=
1
= for p-type
AlamECE606S09
20
for ptype
p A
q N

Conclusion
1)Poissonanddriftdiffusionequationsforma
completesemiclassicaltransportmodelthatcan
explainwidevarietyofdevicephenomena.
2)Driftcurrentresultsfromresponseofelectrons/holes
to electric field The physics of mobility is complex and toelectricfield.Thephysicsofmobilityiscomplexand
materialdependent.
3)Constancyoflowfieldmobilitycanbecheckedby
experiments.
AlamECE606S09
21