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Electroluminescence in pn junctions
Light-emitting diodes
Semiconductor lasers
References: This lecture partially follows the materials from Photonic Devices, Jia-Ming
Liu, Chapter 13. Also from Fundamentals of Photonics, 2nd ed., Saleh &
Teich, Chapters 16-17. And from Physics of Optoelectronics, Michael A.
Parker, CRC Taylor and Francis, pp.47-78
1
Electroluminescence in pn
junctions
Electroluminescence
p+
p+ --
n+
++
+ + n+
++
++
E
Ecp
energy
Eg
EFn
Ecn
Ecp
Eg
Evp
EFp
eV0
Evp
EFp
eV0 > Eg
EFn
Ecn
Eg
Eg
Evn
position
depletion
Evn
position
4
Electron energy
Eg
eV0 > Eg
EFc
EFv
Eg
depletion
position
5
Electron energy
Eg
e(V0-V)
EFc
h
Eg
eV > Eg
EFv
injection
Active
position
Light-emitting diodes
LED, SOA, LD
Light-emitting diode
Semiconductor
Optical Amplifier
Laser Diode
9
Electron energy
e(V0-V)
EFc
Eg
Eg
eV > Eg
EFv
injection
position
(injection electroluminescence)
11
Recombination lifetimes
The internal quantum efficiency may also be written in terms of the
recombination lifetimes as is inversely proportional to r.
Define the radiative and nonradiative recombination lifetimes r and nr
1/ = 1/r + 1/nr
The internal quantum efficiency is then given by rr/r = (1/r)/(1/)
int = / r = nr / (r + nr)
*Semiconductor optical sources require int to be large
(in typical direct bandgap materials r nr).
13
rr(cm3 s-1)
nr
int
Si
10-15
10 ms
100 ns
100 ns
10-5
GaAs
10-10
100 ns
100 ns
50 ns
0.5
*assuming n-type material with a carrier concentration no = 1017 cm-3 and defect centers with a
concentration 1015 cm-3 at T = 300 K
The radiative lifetime for bulk Si is orders of magnitude longer than its
overall lifetime because of its indirect bandgap (electron momentum
mismatched). This results in a small internal quantum efficiency.
For GaAs, the radiative transitions are sufficiently fast because of its
direct bandgap (electron momentum matched), and the internal quantum
14
efficiency is large.
16
Optical
Refractive
Excess carrier
field
index
distribution
distribution profile
EFv
EFc
Eg
~ 1 - few m
Photons generated
can be absorbed
outside the active
region
carriers diffuse
x
homostructure
x
no waveguiding
17
Double heterostructures
Very effective carrier and optical confinement can be simultaneously
accomplished with double heterostructures. A basic configuration can
be either P-p-N or P-n-N (the capital P, N represents wide-gap materials,
p, n represents narrow-gap materials). The middle layer is a narrow-gap
material. (e.g. Ga1-yAlyAs-GaAs-Ga1-xAlxAs)
Almost all of the excess carriers created by current injection are
injected into the narrow-gap active layer and are confined within this
layer by the energy barriers of the heterojunctions on both sides of the
active layer.
Because the narrow-gap active layer has a higher refractive index than
the wide-gap outer layers on both sides, an optical waveguide with the
active layer being the waveguide core is built into the double
18
heterostructure.
Ec
Optical
Refractive
Excess carrier
field
index
distribution
distribution profile
h
EFv
Ev
wide-gap outer
layers are
transparent to the
optical wave
~ 0.1 m
carriers confined
x
~few %
Double
heterostructure
x
waveguiding
19
Double heterostructures
20
LED power
e.g. The radiative and nonradiative recombination lifetimes of
the minority carriers in the active region of a LED are 60 ns and
100 ns. Determine the total carrier recombination lifetime and
the power internally generated within the device when the peak
emission wavelength is 870 nm at a driving current of 40 mA.
The total carrier recombination lifetime is given by
= rnr / (r +nr) = 37.5 ns
The internal quantum efficiency
int = / r = 0.625
=> Pint = int i/e (1240 eV-nm / 870 nm) = 36 mW!
(However, this power level is not readily out-coupled from the device! )21
l1
active region
2 = 1 [(n-1)2/(n+1)2] = 4n / (n+1)2
where n is the refractive index of the semiconductor material.
(For GaAs, n = 3.6, 2 = 0.68. The overall transmittance for the
photon flux (power) traveling in the direction of ray A is A=1 2)
23
The photon flux traveling in the direction of ray B has farther to travel
suffers a larger absorption;
a larger incident angle at the semiconductor-air interface
=> a greater Fresnel reflection loss
=> B < A
The photon flux emitted along directions lying outside a cone of
critical angle c = sin-1(1/n) (ray C) suffer total internal reflection.
C = 0
Only rays that lie inside the cone of critical angle can escape so
called escape cone
24
Escape cone
The fraction of light lies within the escape cone from a point
source:
A / 4r2 = (1 cos c)/2 1/4n2
25
Here we estimate the fraction of the total generated photon flux that
lies within the escape cone. The area of the circular disk cap atop this
cone is (assuming a spherical emission distribution radius r)
c
The fraction of the emitted light that lies within the solid angle
subtended by this escape cone is A/4r2
=> 3 = (1 cos c) = (1 (1 1/n2)1/2) 1/4n2
e.g. For a material with refractive index n = 3.6, only 1.9% of the
total generated photon flux lies within the escape cone.
The efficiency with which the internal photons can be extracted
from the LED structure is known as the extraction efficiency e.
26
28
Responsivity
The responsivity R of an LED is defined as the ratio of the emitted
optical power Po to injected current i, i.e. R = Po/i
R = Po/i = h o/i = ext h/e
The responsivity in W/A, when o is expressed in m,
R = ext 1.24/o
The linear dependence of the LED output power Po on the injected
current i is valid only when the current is less than a certain value
(say tens of mA on a typical LED). For larger currents, saturation
causes the proportionality to fail.
29
Current i (mA)
30
Power-conversion efficiency
31
32
Io
MM fiber
SM fiber
surface-emitting
edge-emitting
= sin2 a = NA2
34
Epoxy-encapsulated LED
Transparent epoxy lenses of different shapes alter the emission pattern
in different ways (e.g. hemispherical vs. parabolic lenses)
LED chip
Spectral distribution
The spectral intensity Rsp() of light spontaneously emitted from a
semiconductor in quasi-equilibrium (upon injection) can be determined
as a function of the concentration of injected carriers n.
The spectral intensity of the direct band-to-band injectionelectroluminescence has precisely the same shape as the thermalequilibrium spectral intensity, but its magnitude is increased by the
factor exp [(EFc EFv)/kBT], which can be very large in a presence of
injection. (assuming EFc, EFv within the bandgap for this simple
enhancement factor, eV = EFc - EFv)
Eg
1.2
1.3
1.4
2kBT
1.5
1.6
1.7
38
0.3
0.4
0.5
Wavelength m
0.6
0.7
Modulation
40
f3dB = 1/2
43
= 10 ns
-1
*in electronics,
f3dB 0.35/rise time
-2
-4
5
10
15
Modulation frequency, f (MHz)
20
44
Modulation bandwidth
The spontaneous carrier lifetime is normally on the order of a
few hundred to 1 ns for an LED.
The modulation bandwidth of an LED is typically in the range
of a few megahertz to a few hundred megahertz.
A modulation bandwidth up to 1 GHz can be obtained with a
reduction in the internal quantum efficiency (int = /r) of the LED by
reducing the carrier lifetime to the sub-nanosecond range.
Aside from this intrinsic response speed determined by the carrier
lifetime, the modulation bandwidth of an LED can be further limited
by parasitic effects from its electrical contacts and packaging, as well
as from its driving circuitry.
45
Power-bandwidth product
A 3-dB bandwidth
f3dB = 1/2
Semiconductor lasers
Semiconductor as a gain medium
Rate equations
Current pumping
Spatial characteristics
Spectral characteristics
Direct modulation
Ref. Physics of Optoelectronics, Michael A. Parker, CRC Taylor and Francis, pp.47-78
47
Semiconductor lasers
*Some useful characteristics of semiconductor lasers:
1. Capable of emitting high powers (e.g. continuous wave ~ W).
2. A relatively directional output beam (compared with LEDs) permits
high coupling efficiency (~ 50 %) into single-mode fibers.
3. A relatively narrow spectral width of the emitted light allows
operation at high bit rates (~ 10 Gb/s), as fiber dispersion becomes
less critical for such an optical source.
48
Laser diodes
A laser diode (LD) is a semiconductor optical amplifier (SOA) that
has an optical feedback.
A semiconductor optical amplifier is a forward-biased heavily-doped
p+-n+ junction fabricated from a direct-bandgap semiconductor material.
The injected current is sufficiently large to provide optical gain.
The optical feedback is usually implemented by cleaving the
semiconductor material along its crystal planes.
The sharp refractive index difference between the crystal (~3.5) and
the surrounding air causes the cleaved surfaces to act as reflectors.
49
Laser diodes
The semiconductor crystal therefore in general can act both as a
gain medium and as a Fabry-Perot optical resonator.
Provided that the gain coefficient is sufficiently large, the feedback
converts the optical amplifier into an optical oscillator, i.e. a laser.
The device is called a laser diode or a diode laser or a semiconductor
injection laser.
cleaved surface
p+ n+
cleaved surface
50
cleaved facets
Laser output
Gain medium
R1
R2
cavity length d
51
h
h
absorption
coherent
photons
k
stimulated emission
EFc
Eg
filled
EFv
54
Incident photons with energy Eg < h < (EFc - EFv) cannot be absorbed
because the necessary conduction band states are occupied! (and the
necessary valance band states are empty)
Electron
energy
EFc
h
Eg
filled
EFv
55
EFc
Amplification
by stimulated
emission!
filled
EFv
EFc
Eg
Eg
EFv
active
region
(~m)
Upon high injection carrier density in a heavily-doped p+-n+
junction there exists an active region near the depletion layer, which
contains simultaneously heavily populated electrons and holes
population inverted!
57
Ec
h
EFv
Ev
~ 0.1 m
active
region
filled
The thin narrow-gap active region of a double heterostructure
contains simultaneously heavily populated electrons and holes in a
confined active region population inverted!
58
(m-3)
(m-3)
h Eg
59
This defines the population inversion in a semiconductor. The quasiFermi levels are determined by the pumping (injection) level (EFc EFv
= eV > Eg, where V is the forward bias voltage).
60
Optical
gain (broadband)
EFc
E2
h
Eg
E1
EFv
FWHM = gain
bandwidth
EFC - EFV
frequency
61
Rate equations
62
The active region (i.e. gain region) has volume Va, which is
smaller than the modal volume V containing the optical
energy.
The simplest model assumes that the optical power is
uniformly distributed in V and is zero outside this volume.
The optical confinement factor specifies the fraction of the
optical mode that overlaps the gain region
= Va/V
V
Va
66
The carrier rate equation has the basic form (N: total number
of carriers)
dN/dt = Generation recombination
67
The optical loss term accounts for the optical energy lost
from the cavity --- scatters out of the cavity sidewalls and
some passes through the mirrors (laser diode facets).
69
Optical
gain (broadband)
r
Eg
EFC - EFV
freq
Only small fraction of spontaneously
emitted photons propagate in exactly
the correct direction to enter the laser
mode path.
71
Optical losses
Optical losses
E
Sidewall
scattering
loss
Useful
output
Free-carrier
absorption
75
or
1/ = rvg
Mirror loss
The internal loss and single mirror loss are typically on the
order of 30 cm-1.
78
Gain
Gain
82
Temporal gain
84
Material gain
85
Material gain
ddz = g(n)
=> (z) = exp (g(n)z)
=> The single-pass gain G = (z)/0 = exp (g(n)z)
87
where I()/h = vgu()/h is the photon flux per unit area (cm2).
The absorption coefficient (cm-1) in thermal equilibrium
(taking +ve sign):
() = (c2/8n22sp) () [P(E1) P(E2)]
(c2/8n22sp) () where P(E1) ~ 1, P(E2) ~ 0
88
Current pumping
89
Material transparency
1.8 1018
200
1.6 1018
1.4 1018
100
1.2 1018
+ve g
-ve g
net gain
transparency
n = 1 1018 cm-3
0.90
0.92
0.94
0.96
h (eV)
1.0
1.5
2.0
n (1018 cm-3)
Both the amplifier bandwidth and the peak value of the gain coefficient
increase with n. The bandwidth is defined at the FWHM of the gain
91
profile, also called the 3-dB gain bandwidth.
Differential gain
Slope = g0 /n0
gain
loss
n0
- -g0n0
92
93
J = (el/intr) n
d
+
l
p+ n+
94
gain
loss
J0
J0 = (el/intr) n0
-
95
97
98
Power output
characteristics
100
101
105
106
107
Recall that the material gain g(n) and the temporal gain gt(n)
are related vgg(n) = gt(n)
Steady-state temporal gain gt(n) = 1/(
108
109
110
111
nth
clamped at nth
(additional carriers
recombine immediately
under the effect of
stimulated emission
and feedback)
ith
current
Photon
density
Steady-state
carrier density n
ith
current
Gain at threshold
Above threshold, the gain does not vary much from gth = g(nth).
Recall the differential gain is the slope of the gain g(n)
g0(n) = dg(n)/dn
113
4.3 kA/cm2
(1968)
Impact of double heterostructures
900 A/cm2
(1970)
Jth (A/cm2)
1000
100
40
(1988)
10
1965
1970
1975
1980
1985
1990
19 A/cm2
(2000)
1995
2000
2005
2010
Year
Zhores Alferov, Double heterostructure lasers: early days and future perspectives,
IEEE Journal on Selected Topics in Quantum Electronics, Vol. 6, pp. 832-840, Nov/Dec 2000
117
121
external differential
quantum efficiency
122
(W/A)
e.g. InGaAsP/InGaAsP:
o: 1550 nm
ith: 15 mA
ext: 0.33
R: 0.26 W/A
slope R is known as the
differential responsivity
(or slope efficiency) --- we can extract
ext from measuring R
ith
123
124
P-I characteristics
Current
125
Power-conversion efficiency
The power-conversion efficiency (wall-plug efficiency):
c Po/iV
c = ext [(i ith)/i] (h/eV)
@ i = 2ith
T = 20 30 40 50 60oC
ith2
ith1
x ~2 ~3
current (mA)
(empirical)
128
129
Spatial characteristics
130
Spatial characteristics
Like other lasers, oscillation in laser diodes takes the form of
transverse and longitudinal modes.
The transverse modes are modes of the dielectric waveguide created
by the different layers of the laser diode. Recall that the spatial
distributions in the transverse direction can be described by the integer
mode indices (p, q).
The transverse modes can be determined by using the waveguide
theory for an optical waveguide with rectangular cross section of
dimensions l and w.
If l/o is sufficiently small, the waveguide admits only a single mode
in the transverse direction perpendicular to the junction plane.
131
Lateral modes
However, w is usually larger than o => the waveguide will support
several modes in the direction parallel to the plane of the junction.
Modes in the direction parallel to the junction plane are called lateral
modes. The larger the ratio w/o, the greater the number of lateral modes
possible.
l
w
Elliptical
beam
o/w
e.g. for l = 2 m, w = 10 m,
and o = 800 nm, the divergence
angles are 23o and 5o.
*The highly asymmetric elliptical
distribution of laser-diode
light can make collimating it tricky!
134
Laser spectrum
135
Laser spectrum
Laser spectrum
Spectral characteristics
The spectral width of the semiconductor gain coefficient is relatively
wide (~10 THz) because transitions occur between two energy bands.
Simultaneous oscillations of many longitudinal modes in such
homogeneously broadened medium is possible (by spatial hole burning).
The semiconductor resonator length d is significantly smaller than
that of most other types of lasers.
The frequency spacing of adjacent resonator modes = c/2nd is
therefore relatively large. Nevertheless, many such modes can still fit
within the broad bandwidth B over which the unsaturated gain exceeds
the loss.
=> The number of possible laser modes is M B/
138
g()
142
Active region
go()
r
g()
Standing wave
distribution of
lasing mode 1
143
3dB bandwidth
~3 nm
145
146
147
~4 nm linewidth
multimode lasing
148
149
150
151
3-dB linewidth
3-dB linewidth
153
p-InGaAsP (grating)
InGaAsP MQW active region
n-InP
n-contact
AR coating
156
Bragg condition
The operating wavelength is determined from the Bragg condition
= m (o/2neff)
is the grating period, o/neff is the wavelength as measured in the
diode as a waveguide, and m is the integer order of the Bragg
diffraction. (usually m = 1)
neff is the effective refractive index of the lasing mode in the active
layer --- neff lies somewhere between the index of the guiding layer
(the active region of the diode) and that of the cladding layers
For double-heterostructures, the active region is the higher index
narrow-bandgap region (say n ~ 3.5), and the cladding region is
the lower-index wide-bandgap region (say n ~ 3.2).
157
Single
longitudinal
mode
subm
AR
Active region
DFB laser
158
Different cavity lengths of 400, 600, 800, and 1200 m. The inset shows
the singlemode laser spectrum from a packaged 800-m long DFB laser
159
at a fiber-coupled power of 150 mW @ 600 mA.
160
161
VCSEL schematic
Circular-shaped laser beam
output vertically
p
active region
n
Metal electrodes
163
VCSEL merits
If the resonant wavelength is close to the gain peak, singlelongitudinal-mode operation occurs without the need for any
additional wavelength selectivity.
164
VCSEL applications
VCSELs operating in the visible spectrum are appropriate as sources
for plastic optical fiber (e.g. for automotive) systems.
VCSELs are often selected as sources for short-reach datacom (LAN)
networks operating at 850 nm. Applications include the high-speed
Gigabit Ethernet.
Longer-wavelength VCSELs (emitting in the 1300 and 1550 nm
wavelengths) can be considered for high-capacity point-to-point fiber
systems.
Because of the geometry, monolithic (grown on the same substrate)
two-dimensional laser-diode arrays can be formed. Such arrays can be
useful in fiber optic-network interconnects and possibly in other
165
communication applications (such as on-chip optical interconnects).
Wavelength-tunable laser
diodes
166
m
Mode selection (m)
m = 2nL
=> = n/n + L/L m/m
Larry A. Coldren et al., Tunable semiconductor lasers: a tutorial, Journal of Lightwave Technology,
Vol. 22, pp. 193 202, Jan. 2004
168
By differential analysis
m = 2nL
m + m = 2nL + 2nL
(m + m)/m = (2nL + 2nL)/2nL
m/m + = n/n + L/L
=>
cavity
length
tuning
mode selection
filtering
169
IPhase
IBragg
Metal electrodes
p
active region
n
Metal electrodes
Gain
Phase
Bragg
neff/neff
171
Connie J. Chang-Hasnain, Tunable VCSEL, IEEE Journal on Selected Topics in Quantum Electronics,
Vol. 6, pp. 978 987, Nov/Dec. 2000
172
Modulation characteristics
173
175
Direct modulation
The modulation of a laser diode can be accomplished by changing the
drive current.
This type of modulation is known as internal or direct modulation.
The intensity of the radiated power is modulated - intensity modulation.
Drawbacks of direct modulation: (1) restricted bandwidth and
(2) laser frequency drift (due to the phase modulation of the
semiconductor gain medium upon free-carrier density change).
*Note: Laser diode direct modulation is now only used for relatively low-speed
modulation (below GHz). For GHz and beyond, we typically employ external
modulation, namely, running the diode laser at steady-state (continuous-wave
operation) and modulate the laser beam with an external modulator (which has
a bandwidth on the order of ten GHz).
177
Direct modulation
The coupled rate equations (given by the stimulated emission term
vgg(n)) => laser diode behaves like a damped oscillator (2nd-order ODE
in d2/dt2) before reaching steady-state condition
178
current
threshold
(gain=loss)
time (ns)
relaxation osc. period
Photon
density
gain clamping
condition @
steady state
time (ns)
179
@ Relaxation frequency
time (ns)
time (ns)
time (ns)
time (ns)
180
Laser
diode
time (ns)
LED
(LED does not
have the coupled
stimulated emission
term)
time (ns)
reduced average power
Relaxation oscillation
frequency
181