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2N7000/2N7002, VQ1000J/P, BS170: Vishay Siliconix
2N7000/2N7002, VQ1000J/P, BS170: Vishay Siliconix
Vishay Siliconix
PRODUCT SUMMARY
Part Number
2N7000
2N7002
VGS(th) (V)
ID (A)
5 @ VGS = 10 V
0.8 to 3
0.2
7.5 @ VGS = 10 V
1 to 2.5
0.115
5.5 @ VGS = 10 V
0.8 to 2.5
0.225
VQ1000P
5.5 @ VGS = 10 V
0.8 to 2.5
0.225
BS170
5 @ VGS = 10 V
0.8 to 3
0.5
60
VQ1000J
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
TO-226AA
(TO-92)
S
TO-236
(SOT-23)
1
G
1
3
2
S
3
Top View
Top View
2N7000
Dual-In-Line
D1
14
D4
S1
13
S4
G1
12
G4
11
G2
10
G3
S2
S3
D2
D3
NC
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
NC
TO-92-18RM
(TO-18 Lead Form)
D
N
S
Top View
BS170
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11-1
TA= 25_C
TA= 100_C
Symbol
2N7000
2N7002
VQ1000J
VQ1000P
VDS
60
60
60
60
VGSM
"40
"40
"30
VGS
"20
"20
"20
"20
ID
IDM
TA= 25_C
TA= 100_C
Total Quad
PD
RthJA
VQ1000J/P
BS170
"25
"20
0.2
0.115
0.225
0.225
0.5
0.13
0.073
0.14
0.14
0.175
0.5
0.8
0.4
0.2
1.3
1.3
0.16
0.08
0.52
0.52
0.8
312.5
625
96
96
62.5
TJ, Tstg
Unit
60
0.83
W
156
_C/W
_C
55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
Parameter
Symbol
Test Conditions
Typa
Min
Max
2N7002
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 10 mA
70
60
VDS = VGS, ID = 1 mA
2.1
0.8
2.0
IDSS
V
1
"100
Drain-Source On-Resistanceb
ID(on)
rDS(on)
VDS = 60 V, VGS = 0 V
0.35
4.5
VGS = 5 V, ID = 0.05 A
3.2
7.5
5.8
13.5
VGS = 10 V, ID = 0.5 A
TJ = 125_C
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.2 A
gos
VDS = 5 V, ID = 0.05 A
m
mA
500
TC = 125_C
nA
1
1000
TC = 125_C
TC = 125_C
2.5
"10
60
3
0.075
A
0.5
5.3
2.4
4.4
9
100
7.5
13.5
80
mS
0.5
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
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11-2
VDS = 25 V, VGS = 0 V
f = 1 MHz
22
60
50
11
25
25
pF
2N7002
Symbol
Test Conditions
Typa
Turn-On Time
tON
10
tOFF
VDD = 15 V, RL = 25 W
ID ^0.5 A, VGEN = 10 V, RG = 25 W
Turn-Off Time
10
Turn-On Time
tON
20
Turn-Off Time
tOFF
VDD = 30 V, RL = 150 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W
11
20
Parameter
Min
Max
Min
Max
Unit
Switchingd
ns
Parameter
Typa
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 100 mA
70
60
VGS(th)
VDS = VGS, ID = 1 mA
2.1
0.8
BS170
Max
Min
2.5
0.8
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistanceb
IDSS
VDS = 25 V, VGS = 0 V
0.5
500
10
VDS = 10 V, VGS = 10 V
VGS = 5 V, ID = 0.2 A
VGS = 10 V, ID = 0.2 A
2.3
VGS = 10 V, ID = 0.3 A
2.3
5.5
4.2
7.6
TJ = 125_C
gfs
gos
mA
m
0.5
A
7.5
5
VDS = 10 V, ID = 0.2 A
100
VDS = 10 V, ID = 0.5 A
VDS =5 V, ID = 0.05 A
nA
"10
VDS = 60 V, VGS = 0 V
rDS(on)
Forward Transconductanceb
"500
ID(on)
"100
TJ = 125_C
IGSS
60
100
mS
0.5
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
22
60
11
25
VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W
10
10
VDD = 25 V, RL = 125 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W
10
10
60
pF
Switchingd
Turn-On Time
tON
Turn-Off Time
tOFF
Turn-On Time
tON
Turn-Off Time
tOFF
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279Rev. F, 16-Jul-01
ns
VNBF06
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11-3
Transfer Characteristics
1.0
1.0
6.5 V
VGS = 10, 9, 8, 7 V
0.8
0.8
6V
ID Drain Current (A)
TJ = 55_C
5.5 V
0.6
5V
0.4
4.5 V
4V
0.2
3.5 V
3V
0
125_C
0.4
0.2
2.5 V
2, 1 V
0.0
25_C
0.6
0.0
Capacitance
60
VGS = 0 V
f = 1 MHz
50
rDS @ 5 V = VGS
5
C Capacitance (pF)
rDS(on) On-Resistance ( )
4
3
rDS @ 10 V = VGS
40
30
Ciss
20
Coss
10
Crss
0
0.0
0
0.2
0.4
0.6
0.8
1.0
15
20
25
30
35
Gate Charge
20
10
2.0
12
VDS = 30 V
8
0
0
400
800
1200
1600
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11-4
16
rDS(on) On-Resistance ( )
(Normalized)
ID = 0.5 A
2000
2400
1.5
1.0
VGS = 5 V, rDS @ 0.05 A
0.5
0.0
55
30
20
45
70
95
120
145
1.000
rDS(on) On-Resistance ( )
TJ = 125_C
0.100
TJ = 25_C
0.010
ID = 50 mA
500 mA
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
12
14
16
18
20
Threshold Voltage
0.50
ID = 250 mA
0.25
0.00
0.25
0.50
0.75
50
25
25
50
75
100
125
150
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
0.01
t1
t2
Single Pulse
0.01
0.1
10
100
1K
10 K
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11-5
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
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