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  • Livewire: Obtención Estática de La Curva Característica Base - Emisor

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    Jorge Uska
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    This document contains technical specifications and measurements from experiments with transistors, including: 1. The base-emitter characteristic curve showing increasing base current (Ib) with base-emitter voltage (Vbe) from 0 to 5 volts. 2. The collector-emitter characteristic curve showing increasing collector current (Ic) with collector-emitter voltage (Vce) from 0 to 12 volts. 3. Polarization measurements of a transistor under experimental and simulated conditions showing voltages and currents across various components. 4. Simulated parameters of a transistor circuit in two positions (S1 and S2) measuring currents, voltages and resistance across the transistor components.

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    Original Title

    Lab 4 Livewire

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    This document contains technical specifications and measurements from experiments with transistors, including: 1. The base-emitter characteristic curve showing increasing base current (Ib) with base-emitter voltage (Vbe) from 0 to 5 volts. 2. The collector-emitter characteristic curve showing increasing collector current (Ic) with collector-emitter voltage (Vce) from 0 to 12 volts. 3. Polarization measurements of a transistor under experimental and simulated conditions showing voltages and currents across various components. 4. Simulated parameters of a transistor circuit in two positions (S1 and S2) measuring currents, voltages and resistance across the transistor components.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
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    12 views4 pages

    Livewire: Obtención Estática de La Curva Característica Base - Emisor

    Uploaded by

    Jorge Uska
    This document contains technical specifications and measurements from experiments with transistors, including: 1. The base-emitter characteristic curve showing increasing base current (Ib) with base-emitter voltage (Vbe) from 0 to 5 volts. 2. The collector-emitter characteristic curve showing increasing collector current (Ic) with collector-emitter voltage (Vce) from 0 to 12 volts. 3. Polarization measurements of a transistor under experimental and simulated conditions showing voltages and currents across various components. 4. Simulated parameters of a transistor circuit in two positions (S1 and S2) measuring currents, voltages and resistance across the transistor components.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 4

    Livewire

    1. Obtencin esttica de la curva caracterstica base - emisor

    Vbb(volts)

    Vbe(Volts)

    Ib(A)

    0.5

    492.93mV

    1.0

    605.20mV

    1,18A

    1.5

    626.65mV

    2.45A

    2.0

    638.70mV

    3.71A

    2.5

    647.13mV

    4.95A

    3.0

    653.64mV

    6.19A

    3.5

    658.95mV

    7.43A

    4.0

    663.46mV

    8.66A

    4.5

    667.39mV

    9.90A

    5.0

    670.87mV

    11.13A

    2. Curva Caracterstica Colector-Emisor

    Vcc(volts)

    Vce(volts)

    Ic(volts)

    -3.56mv

    -4.22A

    46.29mv

    470.86A

    68.41mv

    959.8A

    85.67mv

    1.45mA

    102.2mv

    1.94mA

    120.77mv

    2.43mA

    146.71mv

    2.92mA

    221.83mv

    3.38mA

    1.04v

    3.47mA

    1.96v

    3.52mA

    10

    2.87v

    3.56mA

    11

    3.79v

    3.6mA

    12

    4.71v

    3.64mA

    3. Polarizacin del Transistor

    Medidas

    VB

    VE

    VC

    VBE

    VCE

    VR2

    VR1

    VRC

    IB

    IC

    Experimen
    tales
    Simuladas

    1.61
    v
    1.62
    v

    1.04v

    4.21
    v
    4.58
    v

    0,58v

    3.18
    v
    3.44
    v

    1.61
    v
    1.62
    v

    7.45
    v
    7.38
    v

    4.85
    v
    4.58
    v

    7.6A

    1.04m

    3.56
    A

    975.41
    A

    978.94
    mV

    4. Aplicaciones de Transistor

    637.56
    mv

    POSICIN S1
    PARAME
    TRO
    IC
    IB
    VBE
    VCE
    VRB

    SIMULA
    DO
    59.20m
    A
    5.17mA
    823.63
    mV
    75.73m
    V
    6.00V

    POSICIN S2
    PARAME
    TRO
    IC

    SIMULA
    DO
    0A

    IB

    0A

    VBE

    6.04A

    VCE

    6.00V

    VRB

    6.00V

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