PD - 9.

1374B

IRFI3205
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l

VDSS = 55V
RDS(on) = 0.008

ID = 64A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

Max.

Units

64
45
390
63
0.42
20
480
59
6.3
5.0
-55 to + 175

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RJA

Junction-to-Case
Junction-to-Ambient

Typ.

Max.

Units

2.4
65

C/W
C/W
8/25/97

IRFI3205
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
55

2.0
42

Typ.

0.057

14
100
43
70

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss
C

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance

4000
1300
480
12

V(BR)DSS
V(BR)DSS/TJ

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, I D = 1mA
0.008

VGS = 10V, ID = 34A

4.0
V
VDS = VGS, I D = 250A

S
VDS = 25V, ID = 59A
25
VDS = 55V, VGS = 0V
A
250
VDS = 44V, VGS = 0V, TJ = 150C
100
V GS = 20V
nA
-100
VGS = -20V
170
ID = 59A
32
nC VDS = 44V
74
VGS = 10V, See Fig. 6 and 13

VDD = 28V

I D = 59A
ns

RG = 2.5

RD = 0.39, See Fig. 10

Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

V
DS = 25V
pF

= 1.0MHz, See Fig. 5

= 1.0MHz

Source-Drain Ratings and Characteristics

IS
ISM

VSD
t rr
Q rr
t on

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
64

showing the
A
G
integral reverse
390
p-n junction diode.
S
1.3
V
TJ = 25C, IS = 34A, VGS = 0V
110 170
ns
TJ = 25C, IF = 59A
450 680
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

VDD = 25V, starting TJ = 25C, L = 190H

t=60s, =60Hz

RG = 25, IAS = 59A. (See Figure 12)

ISD 59A, di/dt 290A/s, VDD V(BR)DSS,

TJ 175C

Uses IRF3205 data and test conditions

IRFI3205
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V

I , D ra in -to -S o u rce C u rre n t (A )

D

I , D ra in -to -S o u rc e C u rre n t (A )
D

100

4.5 V
2 0 s PU LSE W ID TH
TTCJ = 2 5C

10
0.1

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP

TOP

10

100

4.5V

20 s P UL SE W IDTH
TTCJ = 17 5C

10

0.1

100

2.0

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )

I D , D r ain- to-S ourc e C urre nt (A )

1000

TJ = 2 5 C
TJ = 1 7 5 C
100

10

V DS = 2 5 V
2 0 s P U L SE W ID TH
5

V G S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

100

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

10

V D S , Drain-to-Source V oltage (V)

V D S , D rain-to-S ource V oltage (V )

10

I D = 9 8A

1.5

1.0

0.5

V G S = 10 V

0.0
-60

-40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T em perature (C )

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFI3205
V GS
C iss
C rss
C oss

7000

C , C a p a c ita n c e (p F )

6000

=
=
=
=

20

0V,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd

V G S , G a te -to -S o u rc e V o lta g e (V )

8000

I D = 5 9A
V DS = 44 V
V DS = 28 V
V DS = 11 V

16

C i ss

5000

12

C os s

4000
3000
2000

C rs s

1000
0

A
1

10

FO R TES T C IR CU IT
SEE FIG U R E 13

100

V D S , Drain-to-Source V oltage (V)

60

90

120

150

180

Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

1000

O PER ATION IN TH IS AR EA LIM ITE D

BY R D S(o n)
10s

I D , D ra in C u rre n t (A )

I S D , R e v e rse D ra in C u rre n t (A )

30

TJ = 1 75 C

100

T J = 25 C

100
1 00s

1m s
10
10m s

VG S = 0 V

10
0.6

1.0

1.4

1.8

2.2

2.6

V S D , S ource-to-Drain Voltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

3.0

T C = 25 C
T J = 17 5C
S ing le Pulse

1
1

A
10

V D S , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

100

IRFI3205
70

RD

VDS

I D , Drain Current (A)

60

VGS

D.U.T.

RG

50

- VDD

40

10V
Pulse Width 1 s
Duty Factor 0.1 %

30

Fig 10a. Switching Time Test Circuit

20

VDS

10

90%
0
25

50

75

100

125

TC , Case Temperature

150

175

( C)
10%
VGS

Fig 9. Maximum Drain Current Vs.

Case Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response

(Z thJC)

10

D = 0.50
1
0.20
0.10
PDM

0.05
0.1

t1

0.02

t2

0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC

SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

10

IRFI3205

D.U.T.
RG

+
V
- DD
IAS

10 V

tp

0.01

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

1200

L
VDS

TO P
1000

BO TTOM

800

600

400

200

V D D = 2 5V
25

tp

ID
2 4A
42A
59 A

50

A
75

100

125

150

Starting TJ , Junction T emperature (C)

VDD

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

VDS

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

10 V
QGS

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

175

IRFI3205
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

Period

P.W.

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

ISD

IRFI3205
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)

3.40 (.133)
3.10 (.123)

4.80 (.189)
4.60 (.181)

-A3.70 (.145)
3.20 (.126)

16.00 (.630)
15.80 (.622)

2.80 (.110)
2.60 (.102)
LEA D AS SIGN M EN TS
1 - GA TE
2 - D R AIN
3 - SO U RC E

7.10 (.280)
6.70 (.263)

1.15 (.045)
M IN.

NO TE S:
1 D IM EN SIO N IN G & T OLER AN C ING
PE R A NS I Y14.5M , 1982

3
2 C ON T R OLLIN G D IM EN SION : IN C H.
3.30 (.130)
3.10 (.122)
-B-

13.70 (.540)
13.50 (.530)
C

1.40 (.055)
3X
1.05 (.042)

0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
3X

0.90 (.035)
3X 0.70 (.028)
0.25 (.010)

A M

2.54 (.100)
2X

M IN IM U M C REE PAG E
D IST AN C E BET W EEN
A -B -C -D = 4.80 (.189)

Part Marking Information

TO-220 Fullpak
E XAM
: S
T HIS
N IRF
I840G
E X AM
PLE PLE
: T HI
IS AISN AIRF
1010
SE LY
MBLY
W ITW
H ITH
A S SAS
E MB
CODE
E401
LO TLOT
CO DE
9B 1M

IN TE R NA T ION A L
INT ER NAT IONA L
R EC T IF IER
IRIRF
F 1010
RE CTIF IER
I840G
LO GO
9246

P A RT NU M BE R

PA RT NU MBE R

LOGO

9 24 5
9BE 401 1M

A SAS
S EM
B LY
SE MBLY
LOLOT
T CO
DE E
COD

D A TE C OD E
ATEW )CODE
(YDYW
W )A R
Y(YYW
Y = YE
AR
WYY
W == YE
WE
EK
W W = W E EK

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http://www.irf.com/
Data and specifications subject to change without notice.
8/97

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/