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  • ProTEK A3 Spec Sheet

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    Rahul Agarwal
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    BSI.P09047 is a spinapplied coating regimen designed to protect CMOS-MEMS circuitry during acidic etches. The above processing recipe has been tested for use with silicon and silicon dioxide. No statement or recommendation not contained herein shall have any force or effect unless in an agreement signed by officers of the seller and manufacturer.

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    BSI.P09047 is a spinapplied coating regimen designed to protect CMOS-MEMS circuitry during acidic etches. The above processing recipe has been tested for use with silicon and silicon dioxide. No statement or recommendation not contained herein shall have any force or effect unless in an agreement signed by officers of the seller and manufacturer.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    128 views1 page

    ProTEK A3 Spec Sheet

    Uploaded by

    Rahul Agarwal
    BSI.P09047 is a spinapplied coating regimen designed to protect CMOS-MEMS circuitry during acidic etches. The above processing recipe has been tested for use with silicon and silicon dioxide. No statement or recommendation not contained herein shall have any force or effect unless in an agreement signed by officers of the seller and manufacturer.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 1

    BSI.

    P09047 Etch Protective Coating


    Brewer Science® BSI.P09047 developmental material is a spin-
    applied coating regimen designed to protect CMOS-MEMS
    circuitry during acidic etches using hydrofluoric acid (49% HF
    at 23°C), phosphoric acid (85% at 50°C), nitric acid (69% at
    50°C), or buffered oxide etchant (BOE) etching solutions.

    Coat Parameters Spin Speed Curve


    BSI.PO9047 Spin Speed Curve
    `` Spin speed: 1500 rpm for 60 seconds
    `` Bake (hot plate): 110°C for 3 minutes followed by 175°C for 3 50.00

    minutes. 45.00

    40.00

    35.00
    Removal: 30.00

    25.00
    1. Prepare two Mesitylene baths at room temperature
    20.00

    2. Immerse coated wafers in bath 1 for 30 minutes with Film15.00


    Thickness, µm
    agitation 10.00

    5.00
    3. Immerse the wafers in bath 2 for 30 minutes with agitation
    0.00
    500 100 1500 2000 2500 3000
    4. Rinse the wafer with IPA Thickness, µm 46.98 23.95 16.74 13.30 11.28 9.93
    Spin Speed, rpm

    5. Dry the wafer using spin-dry or nitrogen gun

    Note: The above processing recipe has been tested for use with Storage Conditions: Room temperature (16°C to 26°C)
    silicon and silicon dioxide. For processing on other substrates, Shelf Life: 180 days (tentatively)
    please contact at protectivecoatings@brewerscience.com.

    All statements, technical information and recommendations contained herein are based on tests we believe to be accurate, but the
    accuracy or completeness thereof is not guaranteed and the following is made in lieu of warranty expressed or implied. Neither
    the seller nor manufacturer shall be liable for any injury, loss or damage, direct or consequential, arising from the use or inability to
    use the product. Before using, user shall determine the suitability of the product for his intended use, and user assumes all risk and
    liability whatsoever in connection therewith. No statement or recommendation not contained herein shall have any force or effect
    unless in an agreement signed by officers of the seller and manufacturer.

    Effective Date: 0-7/19/2010

    SM
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