2N3904 / MMBT3904 / PZT3904

2N3904

MMBT3904
C

PZT3904
C

E C B

E C

TO-92
E

SOT-23
Mark: 1A

SOT-223

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
40 60 6.0 200 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200

Max
*MMBT3904 350 2.8 357 **PZT3904 1,000 8.0 125

Units
mW mW/C C/W C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2001 Fairchild Semiconductor Corporation

2N3904/MMBT3904/PZT3904, Rev A

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 3V VCE = 30 V, VEB = 3V 40 60 6.0 50 50 V V V nA nA

ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.65

0.2 0.3 0.85 0.95

V V V V

SMALL SIGNAL CHARACTERISTICS

fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RS =1.0k,f=10 Hz to 15.7kHz 300 4.0 8.0 5.0 MHz pF pF dB

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Typical Characteristics

500 400
125 C

V CE = 5V

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Saturation Voltage vs Collector Current

0.15 = 10
125 C

300
25 C

0.1
25 C

200 100 0 0.1

- 40 C

0.05
- 40 C

1 10 I C - COLLECTOR CURRENT (mA)

100

0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

V BE(ON) BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1
= 10

Base-Emitter ON Voltage vs Collector Current

1 VCE = 5V 0.8
- 40 C 25 C

0.8

- 40 C 25 C

0.6
125 C

0.6
125 C

0.4

0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

Collector-Cutoff Current vs Ambient Temperature

ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10

Capacitance vs Reverse Bias Voltage

f = 1.0 MHz

100 10 1 0.1

VCB = 30V

5 4 3 2
C obo C ibo

25

50 75 100 125 TA - AMBIENT TEMPERATURE ( C)

150

1 0.1

1 10 REVERSE BIAS VOLTAGE (V)

100

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Noise Figure vs Frequency

12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
I C = 100 A, R S = 500

Noise Figure vs Source Resistance

12 NF - NOISE FIGURE (dB)
I C = 1.0 mA

I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200

V CE = 5.0V 10

I C = 5.0 mA

8 6 4 2 0 0.1

I C = 50 A

I C = 100 A

1 10 f - FREQUENCY (kHz)

100

1 10 R S - SOURCE RESISTANCE ( k )

100

Current Gain and Phase Angle vs Frequency

50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)

Power Dissipation vs Ambient Temperature

0 20 40 60 80 100 120 140 160 180
1000
1

- CURRENT GAIN (dB)

SOT-223
0.75

- DEGREES

TO-92

0.5

SOT-23
0.25

V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)

fe

25

50 75 100 TEMPERATURE (o C)

125

150

Turn-On Time vs Collector Current

500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100
Ic 10

Rise Time vs Collector Current

500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 =
Ic 10

100
T J = 125C

T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Storage Time vs Collector Current

500 t S - STORAGE TIME (ns)
T J = 25C

Fall Time vs Collector Current

500 I B1 = I B2 = t f - FALL TIME (ns)
T J = 125C Ic 10

I B1 = I B2 =

Ic 10

VCC = 40V

100
T J = 125C

100
T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

Current Gain
V CE = 10 V f = 1.0 kHz T A = 25oC h oe - OUTPUT ADMITTANCE ( mhos) 500 100

Output Admittance
V CE = 10 V f = 1.0 kHz T A = 25oC

h fe - CURRENT GAIN

100

10

10 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

h re - VOLTAGE FEEDBACK RATIO (x10

100 h ie - INPUT IMPEDANCE (k )

_4

Input Impedance
V CE = 10 V f = 1.0 kHz T A = 25oC

Voltage Feedback Ratio

10 7 5 4 3 2 V CE = 10 V f = 1.0 kHz T A = 25oC

10

0.1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Test Circuits
3.0 V

300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 K

275

C1 < 4.0 pF

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V

10 < t1 < 500 s

t1 10.9 V 275

Duty Cycle = 2% 0 10 K C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER

FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP

PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8

SyncFET TinyLogic UHC VCX

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G