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D44H8 NZT44H8
B E
C C
E
TO-220 B
SOT-223
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 100 mA, IB = 0 60 V
ICBO Collector-Cutoff Current VCB = 60 V, IE = 0 10 µA
IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 µA
ON CHARACTERISTICS
hFE DC Current Gain I C = 2.0 A, VCE = 1.0 V 60
I C = 4.0 A, VCE = 1.0 V 40
VCE(sat ) Collector-Emitter Saturation Voltage I C = 8.0 A, IB = 0.4 A 1.0 V
VBE( sat) Base-Emitter On Voltage I C = 8.0 A, IB = 0.8 A 1.5 V
VBE( on) Base-Emitter On Voltage I C = 10 mA, VCE = 2.0 V 0.52 0.65 V
DC Typical Characteristics
25 °C
100 0.4
- 40 ºC
50 0.2 25 °C
125 ºC
- 40 °C
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.1 1 10
I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRENT (A)
P 4Q
D44H8 / NZT44H8
NPN Power Amplifier
(continued)
2
1.4
V CE = 5V
β = 10
1.2
1.5
1
- 40 ºC
1 - 40 ºC 0.8
25 °C
25 °C 125 ºC
0.6
125 ºC
0.5
0.4
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRENT (A)
Pr4Q
Collector-Cutoff Current
vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA)
100
V CB = 50V
10
0.1
0.01
25 50 75 100 125 150
TA - AMBIENT TEMPERATURE ( ºC)
P 4Q
AC Typical Characteristics
POWER DISSIPATION vs
AMBIENT TEMPERATURE
1.5
PD - POWER DISSIPATION (W)
1.25
1
SOT-223
0.75
0.5
0.25
0
0 25 50 75 100 125 150
o
TEMPERATURE ( C)