2N4403 / MMBT4403

2N4403 MMBT4403

C TO-92 B
B SOT-23
E
Mark: 2T

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 600 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N4403 *MMBT4403
PD Total Device Dissipation 625 350 mW
Derate above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C

 2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 40 V
Voltage*
V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 A, IC = 0 5.0 V
IBEX Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
ICEX Collector Cutoff Current VCE = 35 V, VBE = 0.4 V 0.1 µA

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V 30
IC = 1.0 mA, VCE = 1.0 V 60
IC = 10 mA, VCE = 1.0 V 100
IC = 150 mA, VCE = 2.0 V* 100 300
IC = 500 mA, VCE = 2.0 V* 20
VCE(sat) Collector-Emitter Saturation IC = 150 mA, IB = 15 mA 0.4 V
Voltage* IC = 500 mA, IB = 50 mA 0.75 V
VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* 0.75 0.95 V
IC = 500 mA, IB = 50 mA 1.3 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V, 200 MHz
f = 100 MHz
Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, 8.5 pF
f = 140 kHz
Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, 30 pF
f = 140 kHz
hie Input Impedance IC = 1.0 mA, VCE = 10 V, 1.5 15 kΩ
f = 1.0 kHz
-4
hre Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V, 0.1 8.0 x 10
f = 1.0 kHz
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, 60 500
f = 1.0 kHz
hoe Output Admittance IC = 1.0 mA, VCE = 10 V, 1.0 100 µmhos
f = 1.0 kHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = 30 V, IC = 150 mA, 15 ns
tr Rise Time IB1 = 15 mA 20 ns
ts Storage Time VCC = 30 V, IC = 150 mA 225 ns
tf Fall Time IB1 = IB2 = 15 mA 30 ns

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

 2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT - COLLECTOR EMITTE R VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYPICAL PULSED CURRENT GAIN

500 0.5
VCE = 5V β = 10
400 125 °C
0.4

300 0.3
25 °C

25 °C
200 0.2

100 - 40 °C 0.1 125 °C

- 40 °C

0 0
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRE NT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)

1
1
- 40 °C - 40 °C
0.8
0.8

25 °C
0.6 0.6 25 °C

125 °C
0.4 0.4
β = 10 125°C
VCE = 5V
0.2 0.2

0 0
1 10 100 500 0.1 1 10 25
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRE NT (mA)

Collector-Cutoff Current Input and Output Capacitance

vs Ambient Temperature vs Reverse Bias Voltage
20
I CBO - COLLE CTOR CURRENT (nA)

100
V CB = 35V
16
CAPACITANCE (pF)

10

12
C ib
1
8

0.1 C ob
4

0.01 0
25 50 75 100 125 0.1 1 10 50
T A - AMBIE NT TEMP ERATURE (° C) REVERSE BIAS VOLTAGE (V)
 2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Switching Times Turn On and Turn Off Times

vs Collector Current vs Collector Current
250 500
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
200 400
V cc = 15 V V cc = 15 V
ts

TIME (nS)
TIME (nS)

150 300

100 200
tf t off
tr
50 100
t on
td

0 0
10 100 1000 10 100 1000
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Rise Time vs Collector Power Dissipation vs

and Turn On Base Currents Ambient Temperature
I B1 - TURN 0N BASE CURRENT (mA)

50 1
PD - POWER DISSIPATION (W)

20 SOT-223
0.75 TO-92

10 t r = 15 V
0.5
SOT-23
5
30 ns
0.25
2
60 ns

1 0
10 100 500 0 25 50 75 100 125 150
I C - COLLECTOR CURRENT (mA) TEMPERATURE ( oC)
 2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)

Typical Common Emitter Characteristics (f = 1.0kHz)

Common Emitter Characteristics Common Emitter Characteristics

CHAR. RELATIVE TO VALUES AT I C= -10mA

CHAR. RELATIVE TO VALUES AT VCE = -10V

5 1.3
hoe h re
h ie
1.2 h re and hoe h fe
2 h re
hoe
h fe
1 1.1

0.5 h ie 1
h ie

0.2 V CE = -10 V 0.9 I C = -10mA

T A = 25 oC h fe T A = 25oC

0.1_ _ _ _ _ _ 0.8
1 2 5 10 20 50 -4 -8 -12 -16 -20
I C - COLLECTOR CURRENT (mA) V CE - COLLECTOR VOLTAGE (V)

Common Emitter Characteristics

CHAR. RELATIVE TO VALUES AT TA = 25oC

1.5
I C = -10mA h fe
1.4 V = -10 V h ie
CE
1.3 h re
hoe
1.2
1.1 hoe
1
0.9 h re
0.8
h ie
0.7
0.6 h fe
0.5
-40 -20 0 20 40 60 80 100
T A - AMBIENT TEMPERATURE ( o C)
 2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)

Test Circuits
- 30 V

200 Ω

Ω
1.0 KΩ

- 16 V 50 Ω

≤ 200ns

FIGURE 1: Saturated Turn-On Switching Time Test Circuit

1.5 V - 6.0 V

Ω
1 KΩ 37 Ω
NOTE: BVEBO = 5.0 V

Ω
1.0 KΩ
0

- 30 V
50 Ω

≤ 200ns

FIGURE 2: Saturated Turn-Off Switching Time Test Circuit

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not intended to be an exhaustive list of all such trademarks.
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Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
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