Philips Semiconductors

Product specification

Triacs

BT136 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

SYMBOL PARAMETER BT136BT136VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600 600F 600 4 25 V A A UNIT

Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1

PIN CONFIGURATION
tab

SYMBOL

T2
main terminal 2 gate main terminal 2
1 23

T1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 107 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 MAX. 6001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. June 2001 1 Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT136 series

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 3.0 3.7 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT136VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.4 0.7 0.4 0.1 35 35 35 70 20 30 20 30 15 1.70 1.5 0.5 MAX. ...F 25 25 25 70 20 30 20 30 15 mA mA mA mA mA mA mA mA mA V V V mA UNIT

IL

Latching current

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT136VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 TYP. 250 MAX. UNIT V/s

dVcom/dt

50

V/s

tgt

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT136 series

8 7 6 5 4 3 2 1 0

Ptot / W

Tmb(max) / C

101 104

IT(RMS) / A

= 180 120 90 60 30

107 110 113 116 119

107 C

1
122 0 1 2 3 IT(RMS) / A 4 125 5

0 -50

50 Tmb / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A

1000

ITSM / A IT T ITSM

12 10
time

Tj initial = 25 C max 100 dIT /dt limit

8 6 4

T2- G+ quadrant

2
10 10us

100us

1ms T/s

10ms

100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 107C.
VGT(Tj) VGT(25 C)

30 25 20 15 10 5 0

ITSM / A

BT136

1.6
IT T I TSM time

1.4 1.2 1 0.8 0.6 0.4 -50

Tj initial = 25 C max

10 100 Number of cycles at 50Hz

1000

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT136 series

3 2.5 2 1.5 1 0.5

IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+

12 10

IT / A Tj = 125 C Tj = 25 C
Vo = 1.27 V Rs = 0.091 ohms

typ

max

8 6 4 2 0

0 -50

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

10

Zth j-mb (K/W) unidirectional bidirectional

3 2.5

2 1.5 1 0.5 0 -50

0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1
P D tp

50 Tj / C

100

150

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dVcom/dt (V/us) 1000 off-state dV/dt limit

3 2.5

BT136 SERIES

2 1.5 1 0.5 0 -50

100

BT136...F SERIES

10

dIcom/dt = 5.1 3.9 A/ms

0 50 Tj / C 100 150

2.3

1.8 100

1.4 150

1 0 50 Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT136 series

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT136 series

DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

Preliminary data

Qualification

Product data

Production

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. June 2001 6 Rev 1.400