1

Copyright 2012, Naresh R. Shanbhag

ECE 482
Homework Assignment #1 Solution

Fall Semester 2012 Prof. N. Shanbhag

1. a) Let, I
IL
= o. The equation of the linear function can be expressed as follows:

y = -2.Sx + 1 + 2.So

The x-intercept of the above linear function is I
IH
= o + u.4. Hence, the noise margins are calculated as follows:

NH
H
= u.6 -o, NH
L
= o

The min(NH
H
, NH
L
) can be maximized when NH
H
and NH
L
are the same, which results in o = u.S.

v
IL
= u.SI, v
IH
= u.7I

b) From the circuit configuration in Fig.1.1s, the composite VTC can be sketched as in Fig. 1.2s with the slope of 6.25 in
the output transition region..


Fig. 1.1s


Fig. 1.2s


B C A
0.2 0.6 1
1
0.2
0.6
0.36
0.52
0.36 0.52
A
B
A
C
Slope = -2.5
Slope = 6.25
1
1
1
0
1
B
C
2
Copyright 2012, Naresh R. Shanbhag
2. a) The propagation delay, t
p
=
t
pHL
+t
pLH
2
= u.Sns
Therefore, the oscillation frequency can be calculated as f
osc
=
1
2Nt

= 2uuNBz

b) The delay of the 2nd and the 4th stages are 2 t
p
. Hence, the total oscillation frequency can be calculated as follows:

osc
=
1
2 S t
p
+2 2 2t
p
=
1
14 t
p
= 14SHEz


3. a) The gate oxide capacitance of this PMOS is C
ox
=
s
cx
t
cx
= 1.4 1u
-6
Fcm
2
.
The body-effect coefficient can be calculated as follows (please note that the sign is minus in PMOS case):

y = -
2qe
s
N

C
ox
= -u.41I

The Fermi potential can be obtained as follows:

1
P
=
kI
q
ln _
N

] = u.47I

From the above results, zero-bias threshold voltage can be calculated as follows:

I
10
= I
]b
- 21
P
-
2qe
s
N

|-21
P
|
C
ox
= -u.S4I

Note that the gate charge of PMOS is negative so that the third term should have minus sign.

b) Let the reduced threshold voltage and the corresponding bulk doping concentration be I
10
i
and N

+ AN

, respectively.

I
10
i
-I
10
= -u.1 =
2qe
s
|-21
P
|
C
ox
|N

- N

+ AN

]

Therefore, the change of bulk doping concentration, AN

= S.6 1u
17
cm
-3


c) The threshold voltage difference with channel implant should be -0.1V, which can be given as follows:

AI
1
=
qN
I
C
ox
= -u.1
N
I
=
-u.1 C
ox
q
= -8.7S 1u
11
cm
-2


Hence, donor ions with the concentration of 8.7S 1u
11
cm
-2
need to be implanted.

d) The threshold voltage considering body-effect for PMOS can be represented by the same equation with NMOS.

I
1
= I
10
+ y [|-21
P
+I
SB
| - |-21
P
|
I
1
- I
10
= -u.1 = y [|-21
P
+I
SB
| - |-21
P
|
v
SB
= v
S
-v
B
= -u.SSv

Therefore, I
B
= 1.7SI .