Basic Electronics, 1st sem B.

E
(A, B, C, D, E, F, G, H SECTION)
Assignment 1
I Questions:
1. Gi!e t"e energ# $an% %iagram o& a 't#'e an% nt#'e semicon%(ctor. S"o) t"e
%o'ant energ# le!el an% t"e &ermi le!el.
*. De&ine t"e )or% +semicon%(ctor,. -"# %oes a '(re semicon%(ctor $e"a!e li.e an
ins(lator at a$sol(te /ero0 Gi!e t"e im'ortant c"aracteristics o& semicon%(ctor.
1. -"# Si is more 're&erre% in com'arison to Ge0
2. Do #o( &in% %i&&(sion 'rocess in con%(ctors0 3(sti&#. Gi!e t"e e4'ression &or
%i&&(sion an% %ri&t c(rrent in a semicon%(ctor.
5. Bring o(t t"e %i&&erences $et)een /ener an% a!alanc"e $rea.%o)n.
6. Di&&erentiate $et)een 7
r,rms
an% 7
rms
!al(es.
II Verify whether the following statements are true:
1. In intrinsic ('(re) semicon%(ctor, concentration o& &ree electrons is e8(al to
concentration o& "oles.
*. In e4trinsic semicon%(ctor, 9
n
: 9
;
.
1. T"e ca'acitor &ilter is s(ite% &or lig"t loa% a''lications.
2. T"e re!erse sat(ration c(rrent in a germani(m %io%e increases $# a &actor o&
*< )"en t"e tem'erat(re is increase% &rom *=>
<
? to 11>
<
?.
5. Bot" t"e acce'tor an% %onor ions are mo$ile.
6. T"e s'ace c"arge region in a %io%e consists o& $ot" t#'es o& c"arge carriers.
@. In a &(ll)a!e recti&ier (sing a trans&ormer *1< 7A1<<1< 7 an% t)o Si
%io%es, t"e 'ea. !oltage across t"e loa% is 21.@* 7.
>. In a $ri%ge recti&ier, t"e ac com'onent across t"e loa% is <.2>1 times t"at o& %c
com'onent.
III Problems:

1(a) Fin% t"e concentration o& "oles an% electrons in 't#'e germani(m at 1<<? i&
t"e con%(cti!it# is 1<< ( Cm)
1
.
($) Be'eat 'art (a) &or nt#'e silicon i& t"e con%(cti!it# is <.1 ( Cm)
1
.
*(a) S"o) t"e resisti!it# o& intrinsic germani(m at 1<<? is 25 Cm
($) I& a %onor t#'e o& im'(rit# is a%%e% to t"e e4tent o& 1 atom 'er 1<
>

germani(m atoms, 'ro!e t"at resisti!it# %ro's to 1.@ Cm.
1. A Silicon %io%e o'erates at a &or)ar% !oltage o& <.2 7olts. Calc(late t"e
&actor $# )"ic" t"e c(rrent )ill $e m(lti'lie% )"en t"e tem'erat(re is
increase% &rom *5 to 15<C
2. An i%eal germani(m 'n C(nction %io%e "as at a tem'erat(re o& 1*5C a
re!erse sat(ration c(rrent o& 1< A. At a tem'erat(re o& 1*5C &in% t"e
1
%#namic resistance &or a <.* 7 $ias in t"e &or)ar% %irection.

5. A &(ll )a!e recti&ier s(''lies a loa% o& 1< ?. T"e ac !oltage a''lie% to t"e
%io%e is 1<<<1<< rms !oltage. I& t"e %io%e &or)ar% resistance is neglecte%
Calc(late, (a) 'ea., %c, rms !al(es o& loa% c(rrent ($) t"e a!erage !al(e o&
!oltage across B
D
(c) ri''le !oltage (%) t"e a!erage 'o)er %issi'ate% $# B
D
(e) ac in'(t 'o)er (&) 'ercentage e&&icienc# (g) minim(m ;I7 rating re8(ire%
&or eac" %io%e.
6. A &(ll)a!e recti&ier )it" 1<<< EF ca'acitor across loa% resistor "as
ma4im(m in'(t !oltage o& 1< 7 at 5< H/ an% t"e 'ea.to'ea. ri''le !oltage
o& <.1 7. Fin% t"e %c loa% c(rrent.

@. In a "al&)a!e recti&ier circ(it &e% &rom *1< 7, 5< H/ mains, it is %esire%
to "a!e a ri''le &actor r F <.<<5 .Fin% t"e !al(e o& t"e ca'acitance nee%e% to
get %c loa% c(rrent o& 5<< mA .Ass(me %io%e is i%eal.
>. A Si %io%e "as a re!erse sat(ration c(rrent o& 1* nA at *<
<
C. Fin% its c(rrent
)"en it is &or)ar% $ise% $# <.65 7.($) Fin% t"e c(rrent in t"e same %io%e )"en
t"e tem'erat(re rises to 1<<
<
C.


Note:
For t"e %ata not 'ro!i%e% in t"e a$o!e 'ro$lems (li.e E
n
etc), re&er
Integrate% electronics $oo. $# Gillman Hal.ias.
T"e missing %ata ma# $e s(ita$l# ass(me%.
Assignments s($mitte% in t"e &orm o& loose s"eets )ill not $e
e!al(ate%.
Dast %ate &or s($missionH 12t" Se'tem$er, *<<@
*