l l l l l l | | | l | l | l l l l l l l l l l l l l l l l l l l l | | | | I | | | I l | | | | l l l l l l l l l l l l l l l l l l l l l l l l l l l l

USOO5463269A
United States Patent [ 1 91 [ 1 1 ] Patent N u m b er : 5, 463, 269
Zim m er m an { 45] Date o f Patent: Oc t. 31 , 1 995
[ 54] PROCESS AN D STRUCTURE OF AN OTHER PUBLI CATI ON S
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I N TEGRATED VACUUM
MI CROELECTRON I C DEVI CE
I nv ento r . Stev en M. Zim m er m an, Pl easant
Val l ey , N . Y .
Assig nee: I nter natio nal Bu siness Mac hines
Co r p o r atio n, Ar m o nk , N . Y .
Ap p l . N o . : 8 47 , 444
Fil ed: Mar . 6, 1 992
Rel ated US. Ap p l ic atio n Data
Co ntinu atio n o f Ser . N o . 555, 21 4, J u l . 1 8 , 1 990 , ab ando ned.
I nt. Cl . 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H0 1 ] 1 1 0 0
U. S. Cl . 31 3/ 30 9
Fiel d o f Sear c h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3/ 30 9, 336,
3 1 3/ 351
Ref er enc es Cited
U. S. PATEN T DOCUMEN TS
3, 453, 47 8 7 / 1 969 Sho u l der s et a1 . . . . . . . . . . . . . . . . . . . . . . . 31 3/ 30 9
3, 497 , 929 3/ 1 97 0 Sho u l der s et a1 . . 29/ 25. 1 7
3, 665, 241 5/ 1 97 2 Sp indt et a1 . . . . . . . . . . . . 31 3/ 351
3, 7 53, 0 22 8 / 1 97 3 Fr aser , J r . . . . . . . 31 3/ 336 X
3, 7 55, 7 0 4 8 / 1 97 3 Sp indt et a1 . . . 31 3/ 30 9
3, 8 55, 499 1 2/ 1 97 4 Y am ada et a1 . 31 5/ 1 69 R
3, 921 , 0 22 1 1 / 1 97 5 Lev ine . . . . . . . . . . . . . . . . 31 3/ 30 9
3, 97 0 , 8 8 7 7 / 1 97 6 Sm ith et al . 31 3/ 30 9
3, 998 , 67 8 1 2/ 1 97 6 Fu k ase et a1 . . . . . . . . 1 56/ 3
4, 0 0 8 , 41 2 2/ 1 97 7 Y ito et al . . . . . . . 31 3/ 30 9
4, 30 7 , 50 7 1 2/ 1 98 1 Gr ay et a1 . 29/ 58 0
4, 51 3, 30 8 4/ 1 98 5 Gr eene et a1 . . . . . . . . . . . . . 357 / 55
4, 7 21 , 8 8 5 l / 1 98 8 Br o die . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3/ 57 6
4, 7 66, 340 8 / 1 98 8 v an der Mast et a1 . 31 3/ 366
4, 8 57 , 7 99 8 / 1 98 9 Sp indt et a1 . . . . . . . . . . . . . . . . . 31 3/ 495
4, 8 8 9, 58 8 1 2/ 1 98 9 Fio r . . . . . . . . . . . . . . . . . . . . . . . . . 1 56/ 643
5, 0 1 2, 1 53 4/ 1 991 Atk inso n et a1 . . . . . . . . . . . . . . . . . . . . 31 3/ 30 9 X
FOREI GN PATEN T DOCUMEN TS
0 1 50 8 8 5 2/ 1 98 4 Eu r o p ean Pat. Of f . .
2536363 8 / 1 97 4 Ger m any .
29
r \ wl
a t /
@ 7 8 7 ?
sav e
2
C. A. Sp indt, A Thin- Fil m Fiel d- Em issio n Catho de, J .
Ap p l . Phy s, v o l . 39, N o . 7 , p p . 350 4- 350 5 ( 1 968 ) .
G. J . Cam p isi, et al . , Mic r o f ab r ic atio n o f Fiel d Em issio n
Dev ic es f o r Vac u u m I nteg r ated Cir c u its Using Or ientatio n
Dep endent Etc hing , Mater ial Res. So c . Sy m p . Pr o c . v o l .
7 6, p p . 67 - 7 2 ( 1 98 7 ) .
1 . Br o die, Phy sic al Co nsider atio ns in Vac u u m Mic r o el ec
tr o nic s Dev ic es, I EEE Tr ansac tio ns o n El ec tr o n Dev ic es,
v o l . 36, N o . 1 1 , p p . 2641 - 2644 ( N o v , 1 98 9) .
N . A. Cade, et al . , W et Etc hing o f Cu sp Str u c tu r es f o r
Fiel d- Em issio n Dev ic es, I EEE Tr ansac tio ns o n El ec tr o n
Dev ic es, v o l . 36, N o . 1 1 , p p . 27 0 9- 27 1 4 ( N o v , 1 98 9) .
R. B. Mac u s, et al . , Fo r m atio n o f Ato m ic al l y Shar p Sil ic o n
N eedl es, I EDM, p p . 8 8 4- 8 8 6 ( 1 98 9) .
W . J . Or v is, et al . , A Pr o g r ess Rep o r t o n the Liv er m o r e
Miniatu r e Vac u u m Tu b e Pr o j ec t, I EEE, I EDM, p p .
529- 531 ( 1 98 9) . B. Go o dm an, Retu m o f the Vac u u m
Tu b e, Disc o v er Mag az ine, p p . 55- 58 ( Mar . , 1 990 ) .
W . J . Or v is, et al . , Mo del ing and Fab r ic ating
Mic r o - Gr av ity I nteg r ated Vac u u m Tu b es, I EEE Tr ansac
tio ns o n El ec tr o n Dev ic es, v o l . 36, N o . 1 1 p p . 2651 - 2658
( N o v , 1 98 9) .
H. H. Bu sta, et al . , Fiel d Em issio n f r o m Tu ng sten- Cl ad
Sil ic o n Py r am ids, I EEE Tr ansac tio ns o n El ec tr o n Dev ic es,
v o l . 36, N o . 1 1 , p p . 267 9- 268 5 ( N o v . , 1 98 9) .
R. A. Lee, et al . , Sem ic o ndu c to r Fab r ic atio n Tec hno l o g y
Ap p l ied to Mic r o m eter Val v es, I EEE Tr ansac tio ns o n El ec
tr o n Dev ic es, v o l . 36, N o . 1 1 , p p . 27 0 3- 27 0 8 ( N o v , 1 98 9) .
Pr im ar y Ex am iner - Sandr a L. O Shea
Atto r ney , Ag ent, o r F ir m - Az iz M. Ahsan
[ 57 ] ABSTRACT
The p r esent inv entio n r el ates g ener al l y to a newinteg r ated
Vac u u m Mic r o el ec tr o nic Dev ic e ( VMD) and a m etho d f o r
m ak ing the sam e. Vac u u m Mic r o el ec tr o nic Dev ic es r eq u ir e
sev er al u niq u e thr ee dim ensio nal str u c tu r es: a shar p ? el d
em issio n tip , ac c u r ate al ig nm ent o f the tip inside a c o ntr o l
g r id str u c tu r e in a v ac u u m env ir o nm ent, and an ano de to
c o l l ec t el ec tr o ns em itted b y the tip . Al so disc l o sed is a new
str u c tu r e and a p r o c ess f o r f o r m ing dio des, tr io des, tetr o des,
p ento des and o ther sim il ar str u c tu r es. The ? nal str u c tu r e
m ade c an al so b e c o nnec ted to o ther sim il ar VMD dev ic es
o r to o ther el ec tr o nic dev ic es.
29 Cl aim s, 6 Dr awing Sheets
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US. Patent Oc t. 31 , 1 995 Sheet 6 o f 6 5, 463, 269
I I I I I I I I I I I I I I I I I I I I
1 1 . 7 530 B21 1 1 1
FI G. 1 1
FI G. 1 3
5, 463, 269
1
PROCESS AN D STRUCTURE OF AN
I N TEGRATED VACUUM
MI CROELECTRON I C DEVI CE
This p atent ap p l ic atio n is c o ntinu atio n o f US. p atent
ap p l ic atio n Ser . N o . 0 7 / 555, 21 4, ? l ed o n J u l . 1 8 , 1 990 no w
ab ando ned.
FI ELD OF THE I N VEN TI ON
The p r esent inv entio n r el ates g ener al l y to a newinte
g r ated Vac u u m Mic r o el ec tr o nic Dev ic e ( VMD) and a
m etho d f o r m ak ing the sam e. Vac u u m Mic r o el ec tr o nic
Dev ic es r eq u ir e sev er al u niq u e thr ee dim ensio nal str u c tu r es:
a shar p ? el d em issio n tip , ac c u r ate al ig nm ent o f the tip
inside a c o ntr o l g r id str u c tu r e in p r ef er ab l y a v ac u u m
env ir o nm ent, and an ano de to c o l l ec t el ec tr o ns em itted b y
the tip .
CROSS- REFEREN CE
This p atent ap p l ic atio n r el ates to US. p atent ap p l ic atio n
Ser . N o . 555, 21 3, ? l ed c o nc u r r entl y o n J u l . 1 8 , 1 990 , the
disc l o su r e o f whic h is inc o r p o r ated her ein b y r ef er enc e.
BACKGROUN D OF THE I N VEN TI ON
The desig ner s o f el ec tr o nic sy stem s hav e f o r m any y ear s
tho u g ht o f way s to desig n and im p r o v e sem ic o ndu c to r
dev ic es. The v ac u u m tu b e, o nc e the m ainstay o f el ec tr o nic s,
had l im itatio ns su c h as the m ec hanic al l y f ab r ic ated str u c
tu r es inside the g l ass env el o p e p r ev enting m iniatu r iz atio n
and integ r atio n, and the ther m io nic c atho de k eep ing the
p o wer dr ain hig h. Ther e hav e r ec entl y b een sig ni? c ant
dev el o p m ents in this ar ea that o f f er the o p p o r tu nity o f
esc ap ing the p r ev io u s r estr aints. Sem ic o ndu c to r f ab r ic atio n
tec hniq u es c an no wb e u sed to dev el o p str u c tu r es in m ic r o
m iniatu r e f o r m and integ r ate m any o f them to g ether . Co m
b ining these r nic r o r niniatu r e str u c tu r es with a ? el d em issio n
el ec tr o n so u r c e o ne c an no wp r o du c e r nic r o m iniatu r e
v ac u u m tu b e str u c tu r es whic h do no t r eq u ir e heated c ath
o des. These str u c tu r es b eing o n the o r der o f m ic r o m eter s in
siz e, p er m it the integ r atio n o f m any dev ic es o n a sing l e
su b str ate, j u st as m any sem ic o ndu c to r dev ic es ar e p r o du c ed
o n a sing l e c hip .
The Vac u u m Mic r o el ec tr o nic Dev ic es p r esentl y in u se
r eq u ir e sev er al u niq u e thr ee- dim ensio nal str u c tu r es, whic h
inc l u de, a v ac u u m sp ac e, a shar p , p r ef er ab l y l ess than 1 0 0
nm r adiu s ? el d em issio n tip , and the ac c u r ate al ig nm ent o f
tip inside an ex tr ac tio n/ c o ntr o l el ec tr o de str u c tu r e. Vac u u m
Mic r o el ec tr o nic Dev ic es inc l u de a ? el d- em issio n c atho de
and add additio nal str u c tu r es, su c h as, an ex tensio n o f the
v ac u u m sp ac e, an ano de o p p o site the c atho de tip , and ther e
m ay o r m ay no t b e additio nal ac c u r atel y al ig ned c o ntr o l
el ec tr o des p l ac ed b etween the tip and the ano de.
The ? el d em issio n disp l ay el em ents that u til iz e these
Vac u u m Mic r o el ec tr o nic Dev ic es u se the b asic ? el d em is
sio n str u c tu r e and add additio nal str u c tu r es, su c h as, an
ex tensio n o f the v ac u u m sp ac e, a p ho sp ho r su r f ac e o p p o site
the c atho de tip , and additio nal el ec tr o des to c o l l ec t and/ o r
c o ntr o l the el ec tr o n c u r r ent. Gr o u p s o f indiv idu al Vac u u m
Mic r o el ec tr o nic Dev ic es and/ o r disp l ay el em ents c an b e
el ec tr ic al l y inter c o nnec ted du r ing f ab r ic atio n to f o r m inte
g r ated c ir c u its and/ o r disp l ay s.
Vac u u m Mic r o el ec tr o nic Dev ic es hav e sev er al u niq u e
f eatu r es. They ar e ex p ec ted to hav e su b p ic o sec o nd switc h
ing sp eeds and ar e tho u g ht b y so m e to b e the f astest
1 O
20
25
30
35
45
50
55
60
65
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el ec tr o nic dev ic es p o ssib l e. They wil l o p er ate at tem p er a
tu r es r ang ing f r o m near ab so l u te z er o to hu ndr eds o f deg r ees
Cel siu s l im ited p r inc ip al l y b y their m ater ial s o f c o nstr u c
tio n. These str u c tu r es c an b e m ade o f al m o st any c o ndu c to r
and insu l ato r m ater ial . They ar e intr insic al l y r adiatio n har d.
They ar e al so v er y e? ic ient b ec au se c o ntr o l is b y c har g e and
no t b y c u r r ent ? o w, and the u se o f hig h ? el d em itter s
el im inates the ther m io nic em issio n heater s o f tr aditio nal
v ac u u m dev ic es.
I n US. Pat. N o . 4, 7 21 , 8 8 5, and al so in an ar tic l e p u b
l ished b y I v o r Br o die, Phy sic al Co nsider atio ns in Vac u u m
Mic r o el ec tr o nic s Dev ic es , I EEE Tr ansac tio ns o n El ec tr o n
Dev ic es, Vo l . 36, N o . 1 1 , p ag es 2641 - 2644 ( N o v em b er
1 98 9) , a ? el d- em issio n m ic r o tr io de is desc r ib ed. The tr io de
c o nsists o f a m etal c o ne attac hed to a m etal o r hig h
c o ndu c tiv ity sem ic o ndu c to r b ase el ec tr o de. The heig ht o f
the c o ne is g iv en as h the r adiu s o f c u r v atu r e at the c atho de
tip is A m etal ano de is hel d at a distanc e d f r o m the
tip o f the c o ne b y a sec o nd insu l ating l ay er . The c o ne tip is
at the c enter o f a c ir c u l ar ho l e hav ing a r adiu s a in a g ate
( o r ? r st ano de) el ec tr o de o f thic k ness t . W hen the ap p r o
p r iate p o sitiv e p o tential dif f er enc e is ap p l ied b etween the
b ase el ec tr o de and the g ate el ec tr o de, an el ec tr ic ? el d is
g ener ated at the c atho de tip that al l o ws el ec tr o ns to tu nnel
thr o u g h the tip into the v ac u u m sp ac e and m o v e to war ds the
ano de. The ? el d at the tip and, henc e, the q u antity o f
el ec tr o ns em itted c an b e c o ntr o l l ed b y v ar y ing the g ate
p o tential .
W hil e these Vac u u m Mic r o el ec tr o nic Dev ic es c an b e
m ade in al m o st any siz e and m ay hav e ap p l ic atio ns as
disc r ete dev ic es, their b est p er f o r m anc e and m aj o r ap p l ic a
tio n is ex p ec ted to c o m e f r o m ex tr em e m iniatu r iz atio n, l ar g e
ar r ay s, and c o m p l ex v er y l ar g e sc al e integ r atio n o f c ir c u its.
N o n- ther m io nic ? el d em itter s, ? el d em issio n dev ic es, and
? el d em issio n disp l ay s ar e al l k no wn in the ar t. Sinc e the
f ab r ic atio n o f the ? el d em issio n c atho de str u c tu r e is a
c r itic al el em ent c o m m o n to the dev ic es m entio ned, its ar t
wil l b e addr essed ? r st. The m ater ial ( insu l ato r s and c o ndu c
to r s/ ? el d em itter s) ar e al l dep o sited and p r o c essed b y r el a
tiv el y c o m m o n dep o sitio n and l itho g r ap hic p r o c essing tec h
niq u es with the sing l e ex c ep tio n o f a sp ec ial shar p edg e
( b l ade) o r p o int ( tip ) str u c tu r e whic h is c o m m o n to al l
? el d- em issio n c atho des. The ar t c an b e b r o adl y c l assi? ed
into ? v e c ateg o r ies, and these c ateg o r ies ar e p r im ar il y
c ateg o r iz ed b y the m etho ds u sed to f o r m this shar p b l ade o r
tip .
The ? r st c ateg o r y is o ne o f the ear l iest c ateg o r ies in whic h
the c atho de tip str u c tu r e is f o r m ed b y the dir ec t dep o sitio n
o f the m ater ial . An ex am p l e o f this ty p e is ex em p l i? ed in a
p ap er b y C. A. Sp indt, A Thin- Fil m Fiel d- Em issio n Cath
o de J . Ap p l . Phy s. , Vo l . 39, N o . 7 , p ag es 350 4- 350 5 ( 1 968 ) ,
in whic h shar p m o l y b denu m c o ne- shap ed em itter s ar e
f o r m ed inside ho l es in a m o l y b denu m ano de l ay er and o n a
m o l y b denu m c atho de l ay er . The two l ay er s ar e sep ar ated b y
an insu l ating l ay er whic h has b een etc hed away in the ar eas
o f the ho l es in the ano de l ay er do wn to the c atho de l ay er .
The c o nes ar e f o r m ed b y sim u l taneo u s no r m al and steep
ang l e dep o sitio ns o f the m o l y b denu m and al u m ina, r esp ec
tiv el y , o nto the r o tating su b str ate c o ntaining the ano de and
c atho de l ay er s. The newl y dep o sited al u m ina is sel ec tiv el y
r em o v ed. Sir r r il ar wo r k has al so b een disc l o sed in US. Pat.
N o . 3, 7 55, 7 0 4.
A sec o nd c ateg o r y is the u se o f o r ientatio n- dep endent
etc hing o f sing l e c r y stal m ater ial s su c h as sil ic o n. The
p r inc ip l e o f the o r ientatio n- dep endent etc hing is to p r ef er
ential l y attac k a p ar tic u l ar c r y stal l o g r ap hic f ac e o f a m ate
5, 463, 269
3
r ial . By u sing sing l e c r y stal m ater ial s p atter ned with a
m ask ing m ater ial , the aniso tr o p ic al l y etc hed ar eas wil l b e
b o u nded b y - the sl o wetc hing f ac es whic h inter sec t at wel l
de? ned edg es and p o ints o f the m ater ial s b asic c r y stal l o
g r ap hic shap e. A su itab l e c o m b inatio n o f etc h, m ater ial , and
o r ientatio n c an r esu l t in v er y shar p l y de? ned p o ints that c an
b e u sed as ? el d em itter s. U. S. Pat. N o . 3, 665, 241 issu ed to
Sp indt, et al . , is an ex am p l e o f this m etho d in whic h an etc h
m ask o f o ne o r m o r e isl ands is p l ac ed o v er a sing l e- c r y stal
m ater ial whic h is then etc hed u sing an etc hant whic h attac k s
so m e o f the c r y stal l o g r ap hic p l anes o f the m ater ial f aster
than the o ther s c r eating etc h p r o ? l es b o u nded b y the sl o w
etc hing p l anes ( an o r ientatio n- dep endent etc h) . As the sl o w
etc hing p l anes c o nv er g e u nder the c enter o f the m ask ,
m u l tif ac eted g eo m etr ic f o r m s with shar p edg es and p o ints
ar e f o r m ed who se shap e is deter m ined b y the etc hant,
o r ientatio n o f the c r y stal , and shap e o f the m ask . Or ienta
tio n- dep endent aniso tr o p ic etc hing whil e an estab l ished
m etho d to c r eate the tip s c an al so hav e an adv er se eif ec t b y
m ak ing these shar p tip s b l u nt ( o r r edu c ing the r adiu s o f the
c atho de tip ) , thu s r edu c ing their ef f ec tiv eness as ? el d em it
ter s, as disc u ssed b y Cade, N . A. et al . , W et Etc hing o f Cu sp
Str u c tu r es f o r Fiel d- Em issio n Dev ic es, I EEE Tr ansac tio ns
o n El ec tr o n Dev ic es, Vo l . 36, N o . 1 1 , p ag es 27 0 9- 27 1 4
( N o v em b er 1 98 9) .
A thir d c ateg o r y u ses iso tr o p ic etc hes to f o r m the str u c
tu r e. I so tr o p ic etc hes etc h u nif o r m l y in al l dir ec tio ns. W hen
m ask ed, the m ask edg e b ec o m es the c enter p o int o f an ar e
whic h o u tl ines the c l assic iso tr o p ic etc h p r o ? l e u nder the
m ask ing m ater ial . The r adiu s o f the ar c is eq u al to the etc h
dep th. Etc hing ar o u nd an iso l ated m ask ed isl and al l o ws the
etc h p r o ? l e to c o nv er g e o n the c enter o f the m ask l eav ing a
shar p tip o f the u netc hed m ater ial whic h c an b e u sed as a
? el d em itter . An ex am p l e o f this is ex em p l i? ed in U. S. Pat.
N o . 3, 998 , 67 8 , issu ed to Shig eo Fu k ase, et al . An em itter
m ater ial is m ask ed u sing isl ands o f a l itho g r ap hic al l y
f o r m ed and etc h r esistant m ater ial . The em itter m ater ial is
etc hed with an iso tr o p ic etc hant whic h f o r m s an iso tr o p ic
etc h p r o ? l e ( c ir c u l ar v er tic al p r o ? l e with a r adiu s ex tending
u nder the r esist f r o m the edg e) . W hen the etc h p r o ? l e
c o nv er g es u nder the c enter o f the m ask f r o m al l sides, a
shar p p o int o r tip r esu l ts.
A f o u r th c ateg o r y u ses o x idatio n p r o c esses to f o r m the
Vac u u m Mic r o el ec tr o nic Dev ic e. Ox idatio n p r o c esses f o r m
a tip b y o x idiz ing the em itter m ater ial . Ox idatio n p r o ? l es
u nder o x idatio n m ask s ar e v ir tu al l y identic al to iso tr o p ic
etc h p r o ? l es u nder m ask s and f o r m the sam e tip str u c tu r e as
the p r o ? l es c o nv er g e u nder a c ir c u l ar m ask . W hen the
o x idiz ed m ater ial is r em o v ed the u no x idiz ed tip c an f u nc tio n
as a ? el d em itter . U. S. Pat. N o . 3, 97 0 , 8 8 7 issu ed to Sm ith et
al . ex em p l i? es this p r o c ess. A su b str ate o f el ec tr o n em issio n
m ater ial su c h as sil ic o n is u sed. A ther m al l y g r o wn o x ide
l ay er is g r o wn o n the su b str ate and is then l itho g r ap hic al l y
f eatu r ed and etc hed to r esu l t in o ne o r m o r e isl ands o f sil ic o n
dio x ide. The su b str ate is then r eo x idiz ed du r ing whic h the
isl ands o f p r ev io u sl y f o r m ed o x ide ac t to sig ni? c antl y r etar d
the o x idatio n o f the sil ic o n u nder them . The r esu l ting
o x idatio n p r o ? l e is v er y sim il ar to the iso tr o p ic etc h p r o ? l e
and sim il ar l y c o nv er g es u nder the isl ands l eav ing a shar p
p o int p r o ? l e in the sil ic o n whic h c an b e ex p o sed b y r em o v
ing the o x ide. Other m ask ing m ater ial su c h as sil ic o n nitr ide
c an b e u sed to sim il ar l y r etar d the o x idatio n and p r o du c e the
desir ed shar p tip p r o ? l e.
A ? f th c ateg o r y etc hes a p it whic h is the inv er se o f the
desir ed shar p l y p o inted shap e in an ex p endab l e m ater ial
whic h is u sed as a m o l d f o r the em itter m ater ial and then
r em o v ed b y etc hing . U. S. Pat. N o . 4, 30 7 , 50 7 issu ed to Gr ay
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et al ex em p l i? es a l im ited em b o dim ent o f this tec hniq u e.
Ho l es in a m ask ing m ater ial ar e l itho g r ap hic al l y f o r m ed o n
a sing l e c r y stal sil ic o n su b str ate. The su b str ate is o r ientatio n
dep endent etc hed thr o u g h the m ask ho l es f o r m ing etc h p its
with the inv er se o f the desir ed p o inted shap e. The m ask is
r em o v ed and a l ay er o f em issio n m ater ial is dep o sited o v er
the su r f ac e ? l l ing the p its. The sil ic o n o f the m o l d is then
etc hed away f r eeing the p o inted r ep l ic as o f the p its who se
shar p p o ints c an b e u sed as ? el d em itter s.
Al l o f the em itter f o r m atio n tec hniq u es m entio ned ab o v e
hav e sev er al l im itatio ns. Or ientatio n- dep endent etc hing
r eq u ir es the u se o f a su b str ate o f sing l e c r y stal em itter
m ater ial . Mo st al l o f them r eq u ir e the su b str ate to b e m ade
o f o r c o ated with the em itter m ater ial . Mo st al l o f them f o r m
the em itter ? r st whic h c o m p l ic ates the f ab r ic atio n o f the
su b seq u ent el ec tr o de l ay er s and the v ac u u m sp ac e needed
f o r a f u l l y f u nc tio nal Vac u u m Mic r o el ec tr o nic Dev ic e.
So m etim es the m etho d u sed o r the p ar tic u l ar p r o c essing
r eg im e do es no t p r o du c e ? el d em issio n tip s o f su f f ic ientl y
sm al l r adiu s. The ar t inc l u des so m e m etho ds b y whic h the tip
c an- b e shar p ened to f u r ther r edu c e this r adiu s. I n a p ap er b y
Car np isi et al , Mic r o f ab r ic atio n Of Fiel d Em issio n Dev ic es
Fo r Vac u u m I nteg r ated Cir c u its Using Or ientatio n Dep en
dent Etc hing , Mat. Res. So c . Sy m p . Pr o c . , Vo l . 7 6, p ag es
67 - 7 2 ( 1 98 7 ) , r ep o r ts the shar p ening o f sil ic o n tip s b y
sl o wl y etc hing them in an iso tr o p ic etc h. Ano ther p ap er
entitl ed A Pr o g r ess Rep o r t On The Liv er m o r e Miniatu r e
Vac u u m Tu b e Pr o j ec t , b y W . J . Or v is et al , I EDM8 9, p ag es
529- 531 ( 1 98 9) , r ep o r ts the shar p ening o f sil ic o n tip s b y
ther m al l y o x idiz ing them and then etc hing away the o x ide.
U. S. Pat. N o . 3, 921 , 0 22, al so disc l o ses a no v el m etho d o f
p r o v iding m u l tip l e tip s o r tip l ets at the tip o f a c o nic al o r
p y r ar nidic al shap ed ? el d em itter .
Var io u s p r o c esses c r eating two o r thr ee el ec tr o de VMD
str u c tu r es b een r ep o r ted in the ar t. As an ex am p l e a p ap er
entitl ed A Pr o g r ess Rep o r t On The Liv er r no r e Miniatu r e
Vac u u m Tu b e Pr o j ec t , b y Or v is et al , I EDM, p ag es
529 531 ( 1 98 9) , desc r ib es a p r o c ess in whic h sil ic o n em it
ter s f o r m ed b y either o r ientatio n- dep endent o r iso tr o p ic
etc hing ar e u sed. Litho g r ap hic al l y f eatu r ed do p ed p o l y sil i~
c o n ano de and g r id l ay er s ar e sep ar ated f r o m the em itter and
eac h o ther b y l ay er s o f l o wdensity g l ass.
I t is no wp o ssib l e as ex em p l i? ed in Bu sta, H. H. et al .
Fiel d Em issio n f r o m Tu ng sten- Cl ad Sil ic o n Py r am ids ,
I EEE Tr ansac tio ns o n El ec tr o n Dev ic es, Vo l . 36, N o . 1 1 ,
p ag es 267 9- 268 5 ( N o v em b er 1 98 9) , to u se c o ating o r c l ad
ding o n these c atho de tip s o r p y r am ids to enhanc e o r m o dif y
the c atho de tip p r o p er ties.
I n this dev el o p ing ? el d o f Vac u u m Mic r o el ec tr o nic
Dev ic es the ar t has al so star ted to sho who wthese ? el d
em issio n c atho des and ex tr ac tio n el ec tr o des c an b e u sed in
a p r ac tic al ap p l ic atio n, su c h as, in a disp l ay ap p l ic atio ns.
U. S. Pat. N o . 4, 8 57 , 7 99 issu ed to Sp indt et al il l u str ates ho w
a su b str ate c o ntaining ? el d em itter s and ex tr ac tio n el ec
tr o des c an b e j o ined to a sep ar ate tr ansp ar ent windo wwhic h
c o ntains ano de c o ndu c to r s and p ho sp ho r str ip s, al l o f whic h
c an wo r k in c o nc er t to f o r m a c o l o r disp l ay . Ano ther c o l o r
disp l ay dev ic e u sing v ac u u m m ic r o el ec tr o nic ty p e str u c tu r e
was p atented in U. S. Pat. N o . 3, 8 55, 499.
This p atent ap p l ic atio n al so disc l o ses an etc h p r o c ess
whic h c an sig ni? c antl y r edu c e the u nwanted u nder c u t f o r a
Vac u u m Mic r o el ec tr o nic Dev ic e whil e stil l al l o wing the
f o r m atio n o f b r idg e str u c tu r es.
I n su m m ar y a ty p ic al ? el d em issio n Vac u u m Mic r o el ec
tr o nic Dev ic es ar e m ade u p o f a shar p l y p o inted c atho de,
su r r o u nded b y a c o ntr o l and/ o r ex tr ac tio n el ec tr o de, and
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p o inting to war d an ano de su r f ac e. The c atho de tip c o u l d
hav e a p o int o r a b l ade p r o ? l e. One o f the k ey tec hno l o g ies
in f ab r ic ating these dev ic es is the f o r m atio n o f the shar p ? el d
em issio n ( c atho de) tip whic h has p r ef er ab l y a r adiu s o n the
o r der o f 1 0 - 1 0 0 m m . The m o st c o m m o n m etho ds o f f o r m a
tio n inc l u de o r ientatio n- dep endent etc hing , iso tr o p ic etc h
ing , and ther m al o x idatio n.
SUMMARY AN D OBJ ECT S OF THE
I N VEN TI ON
I n o ne asp ec t this inv entio n disc l o ses a p r o c ess o f m ak ing
at l east o ne integ r ated v ac u u m m ic r o el ec tr o nic dev ic e c o m
p r ising the step s o f :
a) p r o v iding at l east o ne ho l e in a su b str ate hav ing at l east
o ne el ec tr ic al l y c o ndu c tiv e m ater ial ,
b ) ? l l ing at l east a p o r tio n o f the ho l e with at l east o ne
m ater ial su f f ic ientl y to f o r m a c u sp ,
c ) dep o siting at l east One l ay er o f a m ater ial whic h is
c ap ab l e o f em itting el ec tr o ns u nder the in? u enc e o f an
el ec tr ic al ? el d, and ? l l ing at l east a p o r tio n o f the c u sp
to f o r m a tip ,
d) p r o v iding at l east o ne ac c ess ho l e to hel p f ac il itate the
r em o v al o f m ater ial u nder neath the c u sp , and
e) r em o v ing the m ater ial u nder neath the c u sp to ex p o se at
l east a p o r tio n o f the tip o f the el ec tr o n- em itting
m ater ial and at l east a p o r tio n o f the el ec tr ic al l y c o n
du c tiv e m ater ial in the su b str ate, ther eb y f o r m ing at
l east o ne integ r ated v ac u u m m ic r o el ec tr o nic dev ic e.
I n ano ther asp ec t this inv entio n disc l o ses a p r o c ess o f
m ak ing at l east o ne integ r ated v ac u u m m ic r o el ec tr o nic
dev ic e c o m p r ising the step s o f :
a) p r o v iding at l east o ne ho l e in a su b str ate,
b ) dep o siting at l east o ne insu l ativ e m ater ial and ? l l ing
the ho l e to f o r m a c u sp ,
c ) dep o siting at l east o ne l ay er o f a m ater ial whic h is
c ap ab l e o f em itting el ec tr o ns u nder the in? u enc e o f an
el ec tr ic al ? el d, and ? l l ing at l east a p o r tio n o f the c u sp
to f o r m a tip ,
( 1 ) p r o v iding at l east o ne ac c ess ho l e to hel p f ac il itate the
r em o v al o f m ater ial u nder neath the c u sp , and
e) thr o u g h the ac c ess ho l e r em o v ing al l o f the m ater ial in
the ho l e and ex p o sing at l east a p o r tio n o f the tip o f the
el ec tr o n- em itting m ater ial and at l east a p o r tio n o f the
el ec tr ic al l y c o ndu c tiv e m ater ial in the su b str ate,
ther eb y f o r m ing at l east o ne integ r ated v ac u u m m ic r o
el ec tr o nic dev ic e.
Stil l ano ther asp ec t o f this inv entio n disc l o ses an inte
g r ated v ac u u m m ic r o el ec tr o nic dev ic e c o m p r ising an el ec
tr o n- em itting m ater ial hav ing a ? el d em issio n tip and at l east
o ne ac c ess ho l e that l eads into a c ham b er , wher ein the ? el d
em itter tip f ac e an ano de whic h is in the c ham b er and
sep ar ated b y at l east o ne m ater ial .
The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f this
inv entio n c o u l d al so hav e at l east o ne em itter tip whic h is
el ec tr ic al l y iso l ated f r o m ano ther tip o r at l east o ne tip c o u l d
b e el ec tr ic al l y c o nnec ted to ano ther el ec tr o nic c o m p o nent.
Sim il ar l y , the ano de c o u l d b e a p ar t o f an el ec tr o nic disp l ay
dev ic e o r the dev ic e itsel f c o u l d b e a u sed in an el ec tr o nic
disp l ay dev ic e.
Ap r o du c t c an al so b e m ade b y any o f the p r o c esses o f this
inv entio n.
One o b j ec t o f this disc l o su r e is to f ab r ic ate o ne o r m o r e
Vac u u m Mic r o el ec tr o nic Dev ic es, c o nsisting o f a ? el d em it
ter tip ( c atho de) al ig ned inside a c o ntr o l el ec tr o de o r g r id o r
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ex tr ac tio n el ec tr o de ( g ate) and diam etr ic al l y o p p o sed to a
el ec tr o n c o l l ec tio n el ec tr o de ( ano de) .
Ano ther o b j ec t is to m o dif y the b asic p r o c ess to c r eate
sim p l er dio de str u c tu r es whic h f u nc tio n witho u t g ate str u c ~
tu r es.
Stil l ano ther o b j ec t is to add additio nal g ate str u c tu r es to
f o r m m o r e c o m p l ex dev ic es su c h as, f o r ex am p l e, tetr o des
( two g ates) , p ento des ( thr ee g ates) , to nam e a f ew.
Y et ano ther o b j ec t is to l im it the no np r o du c tiv e u nder c u t
o f this p r o c ess b y em p l o y ing a no v el two step etc hing
seq u enc e.
Stil l y et ano ther o b j ec t o f this inv entio n is to inter c o nnec t
at l east o ne o f the VMD dev ic e into integ r ated c ir c u its.
Y et ano ther o b j ec t o f this inv entio n is to inter c o nnec t at
l east o ne o f the VMD dev ic e to ano ther el ec tr o nic dev ic e.
The o b j ec ts o f the p r esent inv entio n c an b e ac hiev ed u sing
a no v el f ab r ic atio n p r o c ess in whic h the c o nf o r m al dep o si
tio n o f an insu l ato r into a ho l e p r o du c es a sy m m etr ic c u sp
that c an b e u sed as a m o l d to f o r m a p o inted o r shar p ? el d
em issio n tip . Sinc e it is o nl y the p hy sic al ho l e that al l o ws the
c u sp to f o r m , the ho l e c an b e c r eated o u t o f any stab l e
m ater ial inc l u ding l ay er ed al ter nating stac k s o f c o ndu c to r s
and insu l ato r s whic h c an ac t as the el ec tr o des o f the ? nished
dev ic e. Two el ec tr o des ( ano de and em itter ) f o r m a sim p l e
dio de whil e thr ee, f o u r , and ? v e el ec tr o des wo u l d f o r m
r esp ec tiv el y a tr io de, tetr o de, and p ento de f o r ex am p l e.
Fu r ther , sinc e the c u sp is sel f al ig ned within the c enter o f the
ho l e it is al so al ig ned to the c enter o f these el ec tr o des. The
b asic dev ic e str u c tu r e is c o m p l eted b y ? l l ing the c u sp with
a m ater ial c ap ab l e o f em itting el ec tr o ns u nder the in? u enc e
o f an el ec tr ic ? el d o r an el ec tr o n- em itting m ater ial . Ac c ess
ho l es c r eated in the el ec tr o n- em itting m ater ial al l o wthe
r em o v al o f the insu l ato r o f the c u sp f o r m ing l ay er f r o m the
ho l e and f r o m u nder neath the em itter m ater ial , thu s f o r m ing
a sp ac e and f r eeing the shar p tip o f the em itter ( ? el d
em issio n c atho de) that was m o l ded b y the c u sp .
The p r o c ess is no t l im ited to any p ar tic u l ar set o f em itter ,
c o ndu c to r , o r insu l ato r m ater ial s. Many di? er ent m ater ial s
and m ater ial c o m b inatio ns c an easil y b e u sed with this
p r o c ess.
The r em o v al o f the c u sp insu l ato r m ater ial to p r o du c e a
c l ean em itter tip , r esu l ts in the r em o v al o f m ater ial f r o m
u nder the em itter to f r ee the tip , r eq u ir ing the u se o f f o r
ex am p l e an iso tr o p ic etc h. Ex c l u siv e u se o f iso tr o p ic etc hing
wo u l d p r o du c e ex c essiv e no np r o du c tiv e u nder c u t. This no n
p r o du c tiv e u nder c u t o nl y ser v es to weak en the str u c tu r e and
o c c u p y u nnec essar y sp ac e. To el im inate this l im itatio n a
no v el two step etc h p r o c ess is u sed to m inim iz e this no n
p r o du c tiv e u nder c u t. I n this p r o c ess, two ac c ess ho l es, o ne
o n eac h side o f the em itter b r idg e that sp ans the v ac u u m
sp ac e ar e m ade. These ac c ess ho l es intentio nal l y o v er l ap the
v ac u u m sp ac e ho l e. These ac c ess ho l es f u r ther al l o wthe
c u sp insu l ato r etc hants to em p ty the v ac u u m sp ac e. A
r eac tiv e io n etc h ( RI E) is u sed to sel ec tiv el y etc h the
insu l ato r al l the way to the b o tto m o f the v ac u u m sp ac e ho l e
witho u t u nder c u t. A sel ec tiv e iso tr o p ic etc h ( wet o r p l asm a)
is then u sed to r em o v e the insu l ato r p ar titio n f r o m u nder the
b r idg e, thu s f r eeing the em itter tip and c r eating the o p ening
f o r the v ac u u m sp ac e o r f o r m ing a c ham b er . The r esu l ting
u nder c u t o n o ther ex p o sed insu l ato r edg es is l im ited to an
am o u nt eq u al to hal f the p ar titio n thic k ness b ec au se it is
b eing etc hed f r o m b o th sides.
Sinc e the el ec tr o des ar e m ade o f sim p l e c o ndu c to r s,
dev ic e inter c o nnec tio n c an b e ac c o m p l ished u sing the sam e
l ay er s and v er tic al l y thr o u g h v ias in the insu l ato r s. This
el im inates the ex tr a wir ing l ay er s and g r eatl y sim p l i? es
o v er al l f ab r ic atio n, tu r nar o u nd tim e, and dev ic e ar ea b y
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r edu c ing the av er ag e nu m b er o f dev ic e c o ntac t o p ening s.
Passiv e dev ic es ar e al so easil y m ade. Fo r ex am p l e,
c ap ac ito r s c an b e m ade ac r o ss the no r m al insu l ating l ay er s
ev en al l o wing v er tic al c o u p l ing o f l ay er s c ap ac itiv el y ( e. g .
o ne dev ic e s p l ate to ano ther s g r id l ev el ) and c an al so b e
integ r ated in su b str ate u sing tr enc h tec hniq u es. The u se o f
m etal o x ides is a g o o d ex am p l e o f r esisto r el em ents and it,
to o , m ay b e do ne b etween v er tic al c o ndu c to r l ev el s o r as
sep ar ate el em ents.
Additio nal adv antag es and, f eatu r es wil l b ec o m e ap p ar ent
as the su b j ec t inv entio n b ec o m es b etter u nder sto o d b y
r ef er enc e to the f o l l o wing detail ed desc r ip tio n when c o n
sider ed in c o nj u nc tio n with the ac c o m p any ing dr awing s.
BRI EF DESCRI PTI ON OF THE DRAW I N GS
The f eatu r es o f the inv entio n b el iev ed to b e no v el and the
el em ents c har ac ter istic o f the inv entio n ar e set f o r th with
p ar tic u l ar ity in the ap p ended c l aim s. The dr awing s ar e f o r
il l u str atio n o nl y and ar e no t dr awn to sc al e. The inv entio n
itsel f , ho wev er , b o th as to o r g aniz atio n and m etho d o f
o p er atio n, m ay b est b e u nder sto o d b y r ef er enc e to the
detail ed desc r ip tio n whic h f o l l o ws tak en in c o nj u nc tio n with
the ac c o m p any ing dr awing s in whic h:
FI G. 1 A, is a c r o ss- sec tio nal v iewo f a b ase o f a VMD
hav ing an c o ndu c tiv e l ay er o v er an insu l ativ e su b str ate.
FI G. 1 B, is a c r o ss- sec tio nal v iewo f ano ther em b o dim ent
o f a b ase o f a VMD hav ing an c o ndu c tiv e l ay er , and an in
insu l ato r l ay er o v er a c o ndu c tiv e su b str ate.
FI G. 2, sho wa c r o ss- sec tio nal v iewo f the b ase o f FI G. 1 A
hav ing a g r id insu l ato r and a g r id c o ndu c to r o v er it.
FI G. 3, is a c r o ss- sec tio nal v iewwith a p o r tio n o f the
VMD str u c tu r e etc hed.
FI G. 4, is a c r o ss- sec tio nal v iewsho wing the dep o sitio n
o f a c u sp f o r m ing m ater ial .
FI G. 5, is a c r o ss- sec tio nal v iewsho wing the dep o sitio n
o f an el ec tr o n- em itting m ater ial .
FI G. 6, is a c r o ss- sec tio nal v iewsho wing the ac c ess ho l es
thr o u g h the el ec tr o n- em itting m ater ial .
FI G. 7 A, is a c r o ss- sec tio nal v iewo f a c o m p l eted VMD
tr io de as a r esu l t o f an iso tr o p ic etc hing .
FI G. 7 B, is a c r o ss- sec tio nal v iewo f a VMD tr io de as a
r esu l t o f an aniso tr o p ic etc hing .
FI G. 8 , is a c r o ss- sec tio nal v iewo f a c o m p l eted VMD
tr io de as a r esu l t o f an iso tr o p ic etc hing o f the str u c tu r e o f
FI G. 7 B.
FI G. 9A, is a c r o ss- sec tio nal v iewo f VMD dio de m ade
ac c o r ding to the teac hing s o f this inv entio n.
FI G. 9B, is a c r o ss- sec tio nal v iewo f ano ther em b o dim ent
o f a VMD dio de m ade ac c o r ding to the teac hing s o f this
inv entio n.
FI G. 9C, is a c r o ss- sec tio nal v iewo f stil l ano ther em b o di
m ent o f a VMD dio de m ade ac c o r ding to the teac hing s o f
this inv entio n.
FI G. 9D, is a c r o ss- sec tio nal v iewo f y et stil l ano ther
em b o dim ent o f a VMD dio de m ade ac c o r ding to the teac h
ing s o f this inv entio n.
FI G. 1 0 , is a c r o ss- sec tio nal v iewo f a c o m p l eted p ento de
VMD m ade ac c o r ding to the teac hing s o f this inv entio n.
FI G. 1 1 , sho ws a c r o ss- sec tio nal v iewo f an em itter l ay er
c o m p o sed o f a p l u r al ity o f l ay er s.
FI G. 1 2, il l u str ates a p er sp ec tiv e and c u t- away v iewo f a
p ar tial ? el d em issio n str u c tu r e that has b een inter c o nnec ted.
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FI G. 1 3, il l u str ates a p er sp ec tiv e and c u t- away v iewo f a
p ar tial ? el d em issio n str u c tu r e sho wing the tip with a
b l ade p r o ? l e.
DETAI LED DESCRI PTI ON OF THE
I N VEN TI ON
This inv entio n desc r ib es a no v el newtec hniq u e and
str u c tu r e f o r the integ r ated f ab r ic atio n o f o ne o r m o r e
integ r ated Vac u u m Mic r o el ec tr o nic Dev ic es.
One o f the m aj o r el em ents in the f ab r ic atio n o f the
integ r ated Vac u u m Mic r o el ec tr o nic Dev ic e is the u se o f the
c u sp whic h is f o r m ed b y the c o nf o r m al dep o sitio n in a r o u nd
ho l e. Other sy m m etr ic al ho l e shap es wil l al so r esu l t in a
sing l e p o inted c u sp , b u t a r o u nd shap ed ho l e wil l r esu l t in an
o p tim u m c u sp .
The l ay er m ade o f c o ndu c tiv e m ater ial c o u l d al so b e m ade
o f c o m p o site l ay er s o f c o ndu c tiv e m ater ial , so that the tip
ends u p as b eing m ade o f a l ay er ed o r c o m p o site m ater ial .
Onc e this tem p l ate is etc hed away u sing iso tr o p ic etc h
whic h sim u l taneo u sl y f o r m s the v ac u u m sp ac e, an em itter
p o int wil l r esu l t. Pr ef er ab l y , this tip sho u l d hav e the r eq u ir ed
sm al l r adiu s ( f o r ex am p l e b etween l 0 1 0 0 nm ) , r eq u ir ed b y
the dev ic e, b u t if nec essar y , the tip c an b e f u r ther shar p ened
b y iso tr o p ic etc hing o r o x idiz ing a sm al l am o u nt o f the
c o ndu c to r tip to ac hiev e any desir ed tip r adiu s.
I t is im p o r tant to no te that m any dif f er ent c o m b inatio ns o f
m ater ial s, dep o sitio n tec hniq u es ( sp u tter , CVD, p l ating ,
etc . ) , and etc h tec hniq u es ( wet, dr y , io n, etc . ) o r additiv e
p atter n f o r m atio n tec hniq u es c an b e u sed in the f ab r ic atio n
step s.
Ano ther m etho d o f v er tic al integ r atio n is the stac k ing o f
who l e dev ic e l ay er sets o ne o n to p o f ano ther . Sinc e these
dev ic es ar e no t dep endent o n sp ec ial m ater ial s su c h as sing l e
c r y stal sil ic o n, these dev ic e l ay er sets c an al so b e integ r ated
o n to p o f o ther tec hno l o g ies su c h as sem ic o ndu c to r s and
m u l til ay er c er am ic p ac k ag es.
The detail ed desc r ip tio n o f the Vac u u m Mic r o el ec tr o nic
Dev ic e str u c tu r e and the p r o c ess f o r f ab r ic ating it, as
desc r ib ed b el o w, has b een sim p l i? ed b y u sing sev er al p r e
de? ned and nam ed p r o c ess seq u enc es o r de? nitio ns that ar e
r ep etitiv el y r ef er enc ed.
The ter m VMD o r Vac u u m Mic r o el ec tr o nic Dev ic e as
u sed her ein, m eans no t o nl y a dio de b u t a tr io de, tetr o de,
p ento de o r any o ther dev ic e that is m ade u sing this p r o c ess,
inc l u ding the inter c o nnec tio n ther eo f . Basic al l y , a VMD is
any dev ic e with at l east a shar p em itter ( c atho de) tip , and a
c o l l ec to r ( ano de) with an insu l ato r sep ar ating the em itter and
ther e is a p r ef er ab l y a dir ec t tr ansm issio n o f el ec tr o ns f r o m
the em itter to the c o l l ec to r .
The ter m l itho g r ap hic al l y de? ned r ef er s to a p r o c ess
seq u enc e o f the f o l l o wing p r o c ess step s. Fir st a m ask ing
l ay er that is sensitiv e in a p o sitiv e o r neg ativ e sense to so m e
f o r m o f ac tinic r adiatio n, f o r ex am p l e, l ig ht, E- b eam s,
and/ o r X- r ay s, is dep o sited o n the su r f ac e o f inter est. Sec
o nd, this l ay er is ex p o sed p attem wise to the ap p r o p r iate
ac tinic r adiatio n and dev el o p ed to sel ec tiv el y r em o v e the
m ask ing l ay er and ex p o se the u nder l y ing su r f ac e in the
p atter ns r eq u ir ed. Thir d the ex p o sed su r f ac e is etc hed to
r em o v e al l o r p ar t o f the u nder l y ing m ater ial as r eq u ir ed.
Fo u r th, the r em aining ar eas o f the m ask ing l ay er ar e
r em o v ed.
Al ter nativ el y , the ter m l itho g r ap hic al l y de? ned c an
r ef er to f o l l o wing l if to l f p r o c ess. The sam e r eq u ir ed
p atter ns in a m ater ial l ay er as p r o du c ed in the p r ev io u sl y
5, 463, 269
9
desc r ib ed p r o c ess ar e c r eated. This p r o c ess star ts o n the
su r f ac e that is to r ec eiv e the desir ed p atter ned m ater ial l ay er .
Fir st, a m ask ing l ay er that is sensitiv e in a p o sitiv e o r
neg ativ e sense to so m e ac tinic r adiatio n, f o r ex am p l e, l ig ht,
E- b eam s, and/ o r X- r ay s, is dep o sited o n the su r f ac e. Sec
o ndl y , this l ay er is ex p o sed p attem wise to the ap p r o p r iate
ac tinic r adiatio n and dev el o p ed to sel ec tiv el y r em o v e the
m ask ing l ay er and ex p o se the u nder l y ing su r f ac e in p atter ns
wher e the desir ed m ater ial l ay er is to r em ain. The dep o si
tio n, ex p o su r e, and dev el o p m ent p r o c ess is c o ntr o l l ed in
su c h a way that the edg es o f the r em aining m ask im ag e has
a neg ativ e o r u nder c u t p r o ? l e. Thir dl y , the desir ed m ater ial
is dep o sited o v er b o th the o p en and m ask c o v er ed ar eas b y
a l ine o f sig ht dep o sitio n p r o c ess su c h as ev ap o r atio n.
Final l y , the m ask m ater ial is r em o v ed, f o r ex am p l e, b y
disso l u tio n and f r eeing any m ater ial o v er it and al l o wing it
to b e washed away .
The ter m c o ndu c tiv e m ater ial o r c o ndu c to r l ay er o r
c o ndu c tiv e su b str ate r ef er s to any o f a wide v ar iety o f
m ater ial s whic h ar e el ec tr ic al c o ndu c to r s. Ty p ic al ex am p l es
inc l u de the el em ents Mo , W , Ta, Re, Pt, Au , Ag , Al , Cu , N b ,
N i, Cr , Ti, Zr , and Hf , al l o y s o r so l id so l u tio ns c o ntaining
two o r m o r e o f these el em ents, do p ed and u ndo p ed sem i
c o ndu c to r s su c h as Si, Ge, o r tho se c o m m o nl y k no wn as
I I I V c o m p o u nds, and no n- sem ic o ndu c ting c o m p o u nds
su c h as v ar io u s nitr ides, b o r ides, c u b ides ( f o r ex am p l e
LaBg ) , and so m e o x ides ( o f f o r ex am p l e Sn, Ag , I nSn) .
The ter m insu l ativ e m ater ial o r insu l ato r l ay er o r
insu l ativ e su b str ate r ef er s to a wide v ar iety o f m ater ial s
that ar e el ec tr ic al insu l ato r s esp ec ial l y g l asses, and c er am ic s.
Ty p ic al ex am p l es inc l u de el em ents su c h as c ar b o n in a
diam o nd f o r m ( c r y stal l ine o r am o r p ho u s) , sing l e c r y stal
c o m p o u nds su c h as sap p hir e, g l asses and p o l y c r y stal l ine o r
am o r p ho u s c o m p o u nds su c h as so m e o x ides o f Si, Al , - Mg ,
and Ce, so m e ? u o r ides o f Ca, and Mg , so m e c ar b ides and
nitr ides o f sil ic o n, and c er am ic s su c h as al u m ina o r g l ass
c er am ic .
The ter m el ec tr o n~ em itting m ater ial o r em itter l ay er
o r em itter m ater ial r ef er s to any m ater ial c ap ab l e o f
em itting el ec tr o ns u nder the in? u enc e o f an el ec tr ic ? el d.
Ty p ic al ex am p l es inc l u de any o f the el ec tr ic al c o ndu c to r s,
su c h as the ex am p l es l isted ab o v e, and b o r ides o f the r ar e
ear th el em ents, so l id so l u tio ns c o nsisting o f l ) a b o r ide o f a
r ar e ear th o r an al k al ine ear th ( su c h as Ca, Sr , o r Ba) , and 2)
a b o r ide o f a tr ansitio n m etal ( su c h as Hf o r Zr ) . The em itter
m ater ial c an b e a sing l e l ay er ed, a c o m p o site o r a m u l til ay
er ed str u c tu r e. An ex am p l e o f a m u l til ay er ed em itter m ig ht
inc l u de, the additio n o f o ne o r m o r e o f the f o l l o wing , a wo r k
f u nc tio n enhanc em ent l ay er , an r o b u st em itter l ay er , a sp u t
ter r esistant l ay er , a hig h p er f o r m anc e el ec tr ic al l y c o ndu c
tiv e l ay er , a ther m al l y c o ndu c tiv e l ay er , a p hy sic al l y
str eng thening l ay er o r a stif f ening l ay er . This m u l til ay er ed
c o m p o site m ay c o ntain b o th em itter and no n- em itter m ate
r ial s, whic h c an al l ac t sy ner g istic al l y to g ether to o p tim iz e
em itter p er f o r m anc e. An ex am p l e o f this is disc u ssed in
Bu sta, H. H. et al . Fiel d Em issio n f r o m Tu ng sten~ Cl ad
Sil ic o n Py r am ids , I EEE Tr ansac tio ns o n El ec tr o n Dev ic es,
Vo l . 36, N o . 1 1 , p ag es 267 9- 268 5 ( N o v em b er 1 98 9) , wher e
they sho wthe u se o f c o ating o r c l adding o n these c atho de
tip s o r p y r am ids to enhanc e o r m o dif y the c atho de tip
p r o p er ties.
This c o ating o r c l adding c an al so b e u sed in situ atio ns
wher e o ne c anno t f o r m the desir ed tip str u c tu r e o r it is
dif f ic u l t to f o r m the desir ed tip str u c tu r e f o r the c atho de
em itter .
The ter m dep o sited r ef er s to any m etho d o f l ay er
1 5
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1 0
f o r m atio n that is su itab l e to the m ater ial as ar e g ener al l y
p r ac tic ed thr o u g ho u t the sem ic o ndu c to r indu str y . One o r
m o r e o f the f o l l o wing ex am p l es o f dep o sitio n tec hniq u es
c an b e u sed with the p r ev io u sl y m entio ned m ater ial s, su c h
as, sp u tter ing , c hem ic al v ap o r dep o sitio n, el ec tr o o r el ec
tr o l ess p l ating , o x idatio n, ev ap o r atio n, su b l im atio n, p l asm a
dep o sitio n, ano diz atio n, ano dic dep o sitio n, m o l ec u l ar b eam
dep o sitio n o r p ho to dep o sitio n.
The ter m tip as u sed her ein m eans no t o nl y a p o inted
p r o j ec tio n b u t al so a b l ade. Fiel d em itter shap es o ther than
p o ints ar e so m etim es u sed, su c h as b l ades. Bl ades ar e
f o r m ed u sing the sam e m etho ds ex c ep t that the ho l e is a
nar r o wel o ng ated seg m ent. The shap e o f the shar p edg e o f
the b l ade c an b e l inear o r c ir c u l ar o r a l inear seg m ent o r a
c u r v ed seg m ent to nam e a f ew.
The ho l e that is u sed to ev entu al l y f o r r u the c u sp , f r o m the
c u sp f o r m ing m ater ial , c an b e f o r m ed b y a p r o c ess sel ec ted
f r o m a g r o u p c o m p r ising , ab l atio n, dr il l ing , etc hing , io n
m il l ing o r m o l ding . The ho l e c an al so b e etc hed, u sing
etc hing tec hniq u es sel ec ted f r o m a g r o u p c o m p r ising aniso
tr o p ic etc hing , io n b eam etc hing , iso tr o p ic etc hing , r eac tiv e
io n etc hing , p l asm a etc hing o r wet etc hing . The ho l e c o u l d
hav e a p r o ? l e wher e the dim ensio ns o f the ho l e ar e c o nstant
with dep th o r the dim ensio ns o f the ho l e c o u l d v ar y with
dep th.
The c u sp f o r m ing m ater ial is p r ef er ab l y c o nf o r r nal l y
dep o sited. The c u sp f o r m ing m ater ial c o u l d b e an insu l ativ e
m ater ial o r it c o u l d c o m p r ise o f m u l til ay er s.
The ac c ess ho l e that is f o r m ed to r em o v e the m ater ial
f r o m u nder neath the el ec tr o n- em itter tip c o u l d b e f o r m ed b y
a p r o c ess sel ec ted f r o m a g r o u p c o m p r ising , ab l atio n, dr il l
ing , etc hing o r io n m il l ing . The ac c ess ho l e c o u l d al so b e
etc hed, u sing etc hing tec hniq u es sel ec ted f r o m a g r o u p
c o m p r ising aniso tr o p ic etc hing , io n b eam etc hing , iso tr o p ic
etc hing , r eac tiv e io n etc hing , p l asm a etc hing o r wet etc hing .
Sim il ar l y , the m ater ial u nder the c u sp c o u l d b e r em o v ed b y
a p r o c ess sel ec ted f r o m the g r o u p c o m p r ising , disso l u tio n o r
etc hing .
The su b str ate m ay b e an insu l ato r and ser v e as p ar t o f the
iso l atio n b etween adj ac ent el ec tr ic al str u c tu r es. I nsu l ating
su b str ates ar e esp ec ial l y u sef u l in m inim iz ing p ar asitic
c ap ac itanc e whic h c an in tu r n sig ni? c antl y im p r o v e dev ic e
f r eq u enc y r esp o nse. Tr ansp ar ent insu l ating su b str ates ar e
esp ec ial l y u sef u l in disp l ay ap p l ic atio ns wher e the su b str ate
c an al so ser v e as the disp l ay windo wo n whic h b o th l ig ht
em itting str u c tu r es and c o ntr o l c ir c u its c an b e integ r ated
to g ether .
The su b str ate c o u l d b e m ade o f a c o ndu c tiv e m ater ial . A
c o ndu c tiv e su b str ate m ay ser v e as p ar t o f the f u nc tio ning
str u c tu r e su c h as a c o m m o n ano de ( p l ate) o r a c o m m o n b ias
v o l tag e c o ndu c to r . A c o ndu c tiv e su b str ate c an al so b e iso
l ated f r o m the el ec tr ic al dev ic es with the sim p l e additio n o f
an insu l ating l ay er .
The su b str ate whether m ade f r o m a c o ndu c tiv e m ater ial o r
an insu l ativ e m ater ial ser v es p r im ar il y as a p hy sic al su p p o r t
f o r su b seq u ent f u nc tio nal l ay er s and p r o c essing .
FI GS. 1 A and 1 B, il l u str ate the dev ic e b ase str u c tu r e. I f
the Vac u u m Mic r o el ec tr o nic Dev ic e, is to b e f o r m ed o n an
insu l ativ e su b str ate 1 0 , then a ? l m o r l ay er o f c o ndu c tiv e
ano de 1 3, is dep o sited dir ec tl y o n the insu l ativ e su b str ate 1 0 ,
as il l u str ated in FI G. 1 A. The insu l ativ e su b str ate 1 0 , c o u l d
b e m ade o f a sil ic o n dio x ide m ater ial , b u t o ther m ater ial s as
disc u ssed ear l ier c an b e u sed. Do p ed p o l y sil ic o n is a ty p ic al
m ater ial f o r the ano de 1 3, b u t o ther el ec tr ic al l y c o ndu c tiv e
m ater ial as disc u ssed el sewher e c o u l d b e u sed.
W hen a c o ndu c tiv e su b str ate is u sed as a c o m m o n ano de,
5, 463, 269
1 1
o r is a do p ed sem ic o ndu c to r m ater ial with any desir ed
iso l atio ns f o r m ed b y el ec tr ic al l y b iased P- N j u nc tio ns, that
su b str ate c an b e u sed dir ec tl y . I f , a no n- sem ic o ndu c to r
c o ndu c tiv e su b str ate ( o r a do p ed sem ic o ndu c to r su b str ate
witho u t P- N j u nc tio ns) , is to b e iso l ated f r o m the el ec tr ic al
dev ic es, then an insu l ating l ay er is dep o sited, f o l l o wed b y
the dep o sitio n o f an ano de c o ndu c tiv e l ay er .
I f an el ec tr ic al l y iso l atab l e VMD dev ic e is to b e f o r m ed
o n c o ndu c tiv e su b str ate 1 1 , as sho wn in FI G. 1 B, then o n the
c o ndu c tiv e su b str ate 1 1 , an insu l ativ e ? l m o r l ay er 1 2 is
dep o sited. A l ay er o r ? l m o f a c o ndu c tiv e ano de 1 3, whic h
c o u l d b e do p ed p o l y sil ic o n, is then dep o sited o n the insu
l ato r l ay er 1 2. The m ater ial f o r the c o ndu c tiv e su b str ate 1 1 ,
c o u l d b e a sil ic o n m ater ial . The insu l ativ e l ay er 1 2, c an b e
f o r m ed b y the o x idiz ing the sil ic o n m ater ial o f the su b str ate
1 1 , o r b e dep o sited b y o ther m eans k no wn in the ar t. Other
m ater ial s that ar e eq u al l y ac c ep tab l e f o r the c o ndu c tiv e
su b str ate 1 1 o r the insu l ativ e l ay er 1 2, hav e al r eady b een
disc u ssed ear l ier .
Onc e it is dec ided o n the b asic su b str ate str u c tu r e then the
su b seq u ent step s c an b e the sam e. Fo r the il l u str atio n o f the
b est m o de to c ar r y o u t this inv entio n the su b str ate c o n? g u
r atio n o f FI G. 1 A, wil l b e u sed, ev en tho u g h sim il ar dev ic e
wo u l d r esu l t if the su b str ate c o n? g u r atio n o f FI G. 1 B, is
u sed.
As sho wn in FI G. 2, o n the ano de c o ndu c tiv e l ay er 1 3, a
l ay er o f g r id insu l ato r 1 5, c o u l d b e m ade f o r ex am p l e, b y
o x idiz ing the do p ed p o l y sil ic o n o f l ay er 1 3, o r b y dep o siting
an insu l ating g l ass l ay er , to nam e a f ew. On to p o f g r id
insu l ato r 1 5, is dep o sited a l ay er o f g r id c o ndu c to r 1 7 , b y
any o f the m etho ds disc u ssed ear l ier . The m ater ial f o r the
g r id c o ndu c to r 1 7 , f o r ex am p l e, c o u l d b e do p ed p o l y sil ic o n
b u t, o ther m ater ial s disc u ssed el sewher e c an al so b e u sed.
This p r o c ess o f f o r m ing additio nal insu l ativ e o r c o ndu c ~
tiv e m ater ial s is r ep eated f o r eac h c o ntr o l el ec tr o de str u c tu r e
desir ed in the ? nal ac tiv e dev ic e.
The nex t step is to c r eate the v ac u u m ho l e o r sp ac e 1 9, as
sho wn in FI G. 3. The v ac u u m sp ac e 1 9, is l itho g r ap hic al l y
de? ned and etc hed b y m etho ds wel l k no wn in the ar t. The
shap e o f the etc h v ac u u m sp ac e 1 9, c an b e sq u ar e, r o u nd,
o v al , etc . The r adiu s o r hal f o f the m ax im u m c r o ss- sec tio nal
width o f the etc hed v ac u u m sp ac e 1 9, sho u l d b e sm al l er than
the thic k ness o f the su m o f the l ay er s that ar e dep o sited o r
f o r m ed ab o v e the ano de g r id c o ndu c to r 1 7 . Aniso tr o p ic
r eac tiv e io n etc hing RI E ( Reac tiv e I o n Etc hing ) is the
p r ef er r ed etc h m etho d, b u t o ther m etho ds k no wn in the ar t
c o u l d al so b e u sed. The v er tic al o r near v er tic al ho l e wal l s
hav e m inim al l ater al etc hing . This k eep s el ec tr o de ho l es
sm al l and u nif o r m and al so m inim iz es the o v er al l ar ea
o c c u p ied b y the dev ic e. This o p er atio n c r eates ho l es thr o u g h
al l o f the c o ntr o l el ec tr o de c o ndu c to r and insu l ato r l ay er s
and wil l u l tim atel y p r o v ide the v ac u u m sp ac es f o r eac h o f
the Vac u u m Mic r o el ec tr o nic Dev ic es. Etc hing is c o ntinu ed
thr o u g h the g r id c o ndu c tiv e l ay er 1 7 , and the g r id insu l ato r
l ay er 1 5, u ntil at l east a p o r tio n o f the ano de l ay er 1 3, is
ex p o sed. The v ac u u m sp ac e 1 9, do es no t need to ex tend al l
the way to the u p p er su r f ac e o f the c o ndu c tiv e m ater ial o r
ano de 1 3, if any o f the l ef t- o v er m ater ial o f the g r id m ater ial
o r insu l ato r 1 5, wil l etc h o u t in the su b seq u ent v ac u u m sp ac e
etc hing . I t sho u l d b e no ted that the b ase l ay er o r su b str ate
that is u sed b e o f su ? ic ient thic k ness to al l o wf o r the p r o p er
f o r m atio n o f ho l e o r v ac u u m sp ac e 1 9.
As sho wn in FI G. 4, an insu l ativ e l ay er 21 , o f su ? ic ient
thic k ness is c o nf o r r nal l y dep o sited to c l o se the etc h v ac u u m
sp ac e 1 9, in FI G. 3, and f o r m a c u sp 23. The insu l ativ e l ay er
21 , f o r the p u r p o se o f il l u str atio n is a sil ic o n dio x ide
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m ater ial . The insu l ativ e l ay er 21 , c an b e f o r m ed, f o r
ex am p l e, b y c o nf o r m al c hem ic al v ap o r dep o sitio n ( CVD)
p r o c ess. Co nf o r m al CVD dep o sitio n is ty p ic al l y u sed b u t
o ther p r o c esses su c h as ano diz atio n, and ev en m ar g inal l y
c o nf o r m al p r o c esses su c h as sp u tter ing c an p r o du c e ac c ep t
ab l e r esu l ts. Dep o sitio n is c o ntinu ed u ntil the sidewal l
c o ating s c o nv er g e and c l o se the v ac u u m sp ac e ho l e 1 9. This
c o nv er g enc e f o r m s the sy m m etr ic al c u sp 23, with a v er y ? ne
c o nv er g enc e p o int at the b o tto m whic h is sel f - al ig ned to the
c enter o f the v ac u u m sp ac e ho l e 1 9.
An el ec tr o n- em itting m ater ial o r l ay er 25, is dep o sited b y
any m eans that wil l al l o wthe m ater ial to ? l l the c u sp 23.
This dep o sitio n c o u l d b e do ne as sho wn in FI G. 5, f o r
ex am p l e, b y CVD, ev ap o r atio n, su b l im atio n, sp u tter ing ,
el ec tr o l ess dep o sitio n, o r p l ating . The el ec tr o n- em itting
l ay er 25, ac ts as a c atho de du r ing the o p er atio n o f the dev ic e,
and the shar p tip 27 , ac ts as the c atho de em itter . The
el ec tr o n- em itting m ater ial 25, c o u l d b e f o r m ed f o r ex am p l e
b y u sing do p ed p o l y sil ic o n o r tu ng sten, b u t o ther m ater ial s
as disc u ssed el sewher e c o u l d al so b e u sed.
The em itter l ay er 25, is no wl itho g r ap hic al l y f eatu r ed
with o ne o r m o r e ac c ess ho l es 29 and 30 , ex p o sing the
insu l ato r l ay er 21 , as sho wn in FI G. 6. Two o r m o r e ho l es p er
dev ic e ar e desir ab l e to im p r o v e etc hing ac c ess, and to
c o ntr o l u nder c u t as wil l b e ex p l ained b el o w. The ac c ess
ho l e( s) ar e p o sitio ned to o v er l ap the v ac u u m sp ac e ho l e 1 9,
p ar tial l y b u t no t to o v er l ap the c u sp 23.
The insu l ato r l ay er 21 , is no wsel ec tiv el y etc hed c o m
p l etel y o u t o f the v ac u u m sp ac e 1 9, l eav ing c o ndu c tiv e
l ay er s 25, 1 7 and 1 3, intac t. This l eav es a b r idg e 37 , o f
em itter l ay er 25, sp anning the newl y c r eated v ac u u m sp ac e
o r ho l e o r c ham b er 39, and su p p o r ting the shar p em itter tip
27 , ab o v e the ex p o sed ano de 1 3. The sel ec tiv e etc h c an etc h
g r id insu l ato r 1 5, witho u t har m to the ? nished dev ic e. The
sel ec tiv e etc h c an b e a sing l e step iso tr o p ic ( wet o r p l asm a)
etc h whic h wil l r esu l t in a ? nished dev ic e 45, as sho wn in
FI G. 7 A.
Dev ic e 45 in FI G. 7 A is a f u nc tio nal l y ac c ep tab l e tr io de
dev ic e with em itter tip 27 , sel f - al ig ned in g r id el ec tr o de 1 7 ,
and dir ec tl y o p p o sed to ano de 1 3. I t do es, ho wev er , ex hib it
ex c essiv e no nf u nc tio nal u nder c u t 40 , whic h no t o nl y weak
ens the dev ic e str u c tu r e, b u t al so enl ar g es the dev ic e and
adv er sel y af f ec ts the c ir c u it density .
A two - step etc h p r o c ess m inim iz es these u nnec essar y
attr ib u tes. A sel ec tiv e aniso tr o p ic etc h is ? r st u sed to etc h,
witho u t u nder c u t, l ay er 21 , al l the way to the b o tto m o f the
v ac u u m ho l e 1 9, as sho wn in FI G. 7 B. This is p o ssib l e
b ec au se the ac c ess ho l es 29 and 30 , o v er l ap the v ac u u m
sp ac e o r ho l e 1 9. This l eav es o nl y a thin p ar titio n o r a web
31 , u nder the em itter b r idg e 37 , when two ac c ess ho l es 29
and 30 , o ne o n eac h side o f the b r idg e 37 , ar e u sed. A
sel ec tiv e iso tr o p ic etc h ( wet o r p l asm a) is then u sed to
r em o v e the insu l ato r p ar titio n 31 , f r o m u nder the b r idg e 37 ,
f r eeing the shar p em itter tip 27 , and c o m p l eting the o p ening
o f v ac u u m sp ac e o r c ham b er 39, as sho wn in FI G. 8 . The
r esu l ting u nder c u t 41 , o n o ther ex p o sed insu l ato r edg es, is
l im ited to an am o u nt eq u al to hal f the thic k ness o f p ar titio n
31 , b ec au se it is b eing etc hed f r o m b o th sides. The r esu l ting
? nished dev ic e 50 , is sho wn in FI G. 8 .
I t m u st b e r em em b er ed that the ac c ess ho l es 29 and 30 , as
sho wn in FI G. 7 B, ar e in two dim ensio ns, and that the
etc hing to c r eate ac c ess ho l es 29 and 30 , was c ar r ied o u t
u sing iso l ated ho l es, and ther ef o r e b o th the p ar titio ns 31 and
b r idg e 37 , ar e stil l a p ar t o f the insu l ating l ay er 21 and the
c o ndu c tiv e l ay er 25, r esp ec tiv el y .
The r em o v al o f the m ater ial u nder the b r idg e 37 , is
5, 463, 269
1 3
u su al l y the l ast o p er atio n do ne in o r der to m inim iz e c o n
tam inatio n o f that sp ac e o r to av o id the p r o b l em o f r em o v ing
f u tu r e p r o c essing m ater ial s f r o m that c o n? ned ar ea.
The shar p em itter tip 27 , m o l ded b y the c u sp 23, c an
g ener al l y b e c o ntr o l l ed to hav e the desir ed sm al l r adiu s tip
witho u t r eq u ir ing f u r ther p r o c essing . I f , ho wev er , a sm al l er
tip r adiu s is desir ed o r if a p ar tic u l ar set o f desir ab l e
m ater ial s, p r o c ess tec hniq u es, and/ o r p r o c ess c o nditio ns
p r o du c e a l ar g er then desir ed tip r adiu s, then the tip c an b e
shar p ened. This shar p ening ( the r edu c tio n o f the tip r adiu s)
c an b e do ne, f o r ex am p l e, b y sl o wetc hing o f the tip with an
iso tr o p ic etc h o r the o x idatio n o f the tip f o l l o wed b y the
r em o v al o f the o x ide l ay er .
The p r o c ess ab o v e, whic h r esu l ts in tr io de Vac u u m Mic r o
el ec tr o nic Dev ic e 45 o r 50 , c an easil y b e adap ted to f o r m
o ther c o n? g u r atio ns. I n the ? g u r es f o r the f o l l o wing
ex am p l es the two step etc h p r o c ess as u sed to r em o v e l ay er
21 , f r o m ho l e 1 9, to c r eate v ac u u m sp ac e 39, as was u sed to
p r o du c e tr io de dev ic e 50 , wil l b e il l u str ated.
FI GS. 9A, 9B, 9C, and 9D, il l u str ate a f ewem b o dim ents
o f a dio de m ade ac c o r ding to the teac hing s o f this inv entio n.
An ex am p l e o f a dio de p r o c ess seq u enc e is c r eated star ting
with the b asic tr io de p r o c ess seq u enc e thr o u g h g r id insu l ato r
1 5. The g r id c o ndu c to r l ay er 1 7 , is el im inated. The r em ain
ing p r o c ess step s that wo u l d no r m al l y p r o du c e tr io de 50 ,
wil l no wp r o du c e VMD dio de 60 , il l u str ated in FI G. 9A. The
p hanto m b o u ndar y o f v ac u u m sp ac e ho l e 1 9, wo u l d b e so l id
if the sel ec tiv e etc h f o r the c o nf o r m al l ay er 21 , do es no t
attac k l ay er 1 5, o r wo u l d b e l o st as sho wn if it is attac k ed b y
the sel ec tiv e etc h p r o c ess.
FI G. 9B, sho ws the sim p l est f o r m o f a dio de str u c tu r e that
c an b e m ade b y etc hing a v ac u u m ho l e 7 9, whic h is sim il ar
to the ho l e 1 9, dir ec tl y into an el ec tr ic al l y c o ndu c tiv e
su b str ate 1 1 . The l ay er 1 1 , m u st b e su ? ic ientl y thic k to al l o w
f o r the f o r m atio n o f the ho l e 7 9. Star ting with the dep o sitio n
o f the c o nf o r m al l ay er 21 , the p r o c essing c o ntinu es as
disc u ssed ear l ier . A VMD dio de 65, wil l r esu l t o nc e the
p r o c ess is c o m p l eted as il l u str ated in FI G. 9B.
Sim il ar l y , a dio de str u c tu r e that c an b e p r o du c ed o n an
insu l ativ e su b str ate 1 0 , whic h has b een c o v er ed with the
ano de l ay er 1 3, is disc l o sed in FI G. 9C. The l ay er 1 3, m u st
b e su ? ic ientl y thic k to al l o wf o r the f o r m atio n o f the ho l e 7 9,
whic h is sim il ar to the ho l e 1 9. The p r o c essing c o ntinu es as
disc u ssed ear l ier and u p o n c o m p l etio n, the r esu l t is a VMD
dio de 7 0 , as sho wn in FI G. 9C.
Ano ther em b o dim ent o f this inv entio n is il l u str ated in
FI G. 9D, wher e the insu l ativ e su b str ate 1 0 , is ? r st f eatu r ed
with ho l e 7 9, and then ano de c o ndu c tiv e m ater ial o r l ay er
8 6, is c o nf o r m al l y dep o sited. The b asic p r o c ess star ting with
the c o nf o r m al dep o sitio n o f insu l ato r l ay er 21 , as disc u ssed
ear l ier is f o l l o wed and the end r esu l t is a VMD dio de 7 5, as
il l u str ated in FI G. 9D.
Many v ar iatio ns o f m o r e c o m p l ex Vac u u m Mic r o el ec
tr o nic Dev ic es c an al so b e c r eated b y ex tending the b asic
tr io de p r o c ess. One ex am p l e o f this v ar iatio n is a VMD
p ento de dev ic e 90 , as sho wn in FI G. 1 0 . The dev ic e 90 , c an
b e c r eated f r o m the b asic tr io de p r o c ess seq u enc e b y f o l
l o wing the b asic tr io de dev ic e seq u enc e thr o u g h the dep o
sitio n o f g r id c o ndu c to r l ay er 1 7 , then adding , step s dep o s
iting g r id insu l ato r 93, o n g r id c o ndu c to r 1 7 , dep o siting g r id
c o ndu c to r l ay er 94, o n l ay er 93, dep o siting g r id insu l ato r
l ay er 95, o n l ay er 94, and dep o siting g r id c o ndu c to r l ay er 96,
o n l ay er 95. The b asic tr io de p r o c ess is r esu m ed at this step
b y c r eating ho l e 1 9. I n this c ase the ho l e 1 9, is etc hed
thr o u g h al l the l ay er s u ntil the u p p er su r f ac e o f the c o ndu c
tiv e m ater ial o r l ay er 1 3, is ex p o sed. I f the b asic tr io de
1 0
1 5
25
40
45
55
60
65
1 4
p r o c ess seq u enc e that wo u l d no r m al l y l ead to dev ic e 50 , is
f o l l o wed f r o m this p o int, it wil l r esu l t in p ento de dev ic e 90 .
The insu l ato r and c o ndu c to r l ay er s u sed ab o v e to c r eate
the Vac u u m Mic r o el ec tr o nic Dev ic es desc r ib ed c an al so b e
u sed to iso l ate and inter c o nnec t m u l tip l e el ec tr o nic dev ic es
o r c o m p o nents in thr ee dim ensio ns, integ r ating c ir c u its o f
these dev ic es at the sam e tim e that the dev ic es ar e b eing
f ab r ic ated. This is no t il l u str ated b u t c an b e ac c o m p l ished b y
l itho g r ap hic al l y p atter ning eac h c o ndu c tiv e and insu l ativ e
l ay er af ter it is dep o sited and b ef o r e p r o c eeding to the nex t
step . Co ndu c to r m ater ial is r em o v ed wher e iso l atio ns ar e
desir ed and f eatu r ed into isl ands and p aths to f o r m inter
c o nnec tio ns b etween diif er ent dev ic es, b etween dev ic es and
v ias, and b etween dif f er ent v ias. I nsu l ato r l ay er s c an b e
f eatu r ed with a p atter n o f v ia o p ening s to the c o ndu c tiv e
l ay er b el o w. Ac tu al v ia c o nnec tio ns m ay b e m ade either b y
the f o r m atio n o f a stu d ( a c o ndu c tiv e p l u g f o r m ed b y a
nu m b er o f c o nv entio nal m etho ds) o r ? l l ed b y the dir ec t
b l ank et dep o sitio n o f the nex t c o ndu c tiv e l ay er thu s c r eating
v er tic al inter c o nnec tio n p athway s thr o u g h the str u c tu r e.
Any inter c o nnec tio n p atter ns c r eated o n the em itter l ev el
c an b e m ade at the sam e tim e that the ac c ess ho l es 29 and
30 , ar e b eing m ade, b u t sinc e the insu l ato r u nder them wil l
b e etc hed when the v ac u u m sp ac e is etc hed the u nder c u tting
o f these inter c o nnec tio ns r ep r esents a l im itatio n o n the siz e
o f these f eatu r es. The two step etc h wil l sig ni? c antl y m ini
m iz e this u nder c u t j u st as it do es in the dev ic e itsel f , b u t a
f u r ther enhanc em ent o f this p r o c ess c an el im inate u nder c u t
ev er y wher e ex c ep t the v ac u u m dev ic e ar ea. To ac c o m p l ish
this, a sep ar ate o r a sec o nd l itho g r ap hic step is u sed to
f eatu r e any em itter l ev el iso l atio ns inter c o nnec tio ns and
ac c ess ho l es. The sec o nd l itho g r ap hic p atter ning p r o tec ts al l
o f the inter c o nnec tio n and iso l atio n f eatu r es and ex p o ses
o nl y the ac c ess ho l es. The v ac u u m sp ac e etc hing whic h
f o l l o ws u ses the two step etc h p r ev io u sl y desc r ib ed and the
sm al l am o u nt o f u nder c u t that o c c u r s is l im ited to the
v ac u u m sp ac e ar ea o nl y .
Many c o m b inatio ns o f insu l ato r s and c o ndu c to r s m ay b e
u sed in the f ab r ic atio n p r o c edu r es and dev ic e str u c tu r es
desc r ib ed. Sp ec i? c ap p l ic atio ns m ay dic tate sp ec ial m ater ial
p r o p er ties su c h as r esistiv ity , diel ec tr ic c o nstant, ther m al
stab il ity , p hy sic al str eng th, etc . b u t in g ener al ther e ar e thr ee
b asic r eq u ir em ents f o r c o m p atib il ity . Fir st, the m ater ial s
m u st b e c o m p atib l e with the p r o c essing r eq u ir ed f o r f ab r i
c atio n whic h m ay l im it so m e m ater ial c o m b inatio ns in
p ar tic u l ar f ab r ic atio n r eg im es. Sec o nd, their m u st b e
adeq u ate adhesio n b etween adj ac ent l ay er s. Thir d, the m ate
r ial s m u st b e stab l e and no t c o ntam inate the o p er ating
env ir o nm ent o f the v ac u u m dev ic es whic h is ty p ic al l y a
m o der ate to hig h v ac u u m . This l ast r eq u ir em ent is so m ewhat
o p en b ec au se so m e o f these dev ic es m ay b e ab l e to o p er ate
in u p to 1 atm o sp her e o r m o r e o f a hig h io niz atio n p o tential
g as su c h as He. This m ay b e p o ssib l e b ec au se their m ic r o
sc o p ic dim ensio ns p r o v ide v er y sm al l p ath l eng ths and al l o w
the u se o f l o wex tr ac tio n v o l tag es.
FI G. 1 1 , il l u str ates the str u c tu r al detail s o f a c o m p o site o r
m u l til ay er ed em itter 68 . To inc o r p o r ate this str u c tu r e into a
dev ic e, a l ay er 65, is f o r m ed o v er the insu l ativ e l ay er 21 , and
into the p r im ar y c u sp 23, o f FI G. 4. An inter m ediate c u sp 66,
o n the su r f ac e 62, is u su al l y f o r m ed du r ing this p r o c ess. The
l ay er 65, m u st b e o f a m ater ial whic h is c ap ab l e o f em itting
el ec tr o ns u nder the in? u enc e o f an el ec tr ic al ? el d. Lay er 25,
c an no wb e f o r m ed o v er the l ay er 65, and into the inter m e
diate c u sp 66. Sinc e the su r f ac e o f the tip 67 , no wb ec o m es
the ? el d em issio n su r f ac e it is c l ear that the l ay er 25, need
no t b e m ade o f a ? el d em issio n m ater ial , b u t c an b e m ade o f
any m ater ial c o m p atib l e with the p r o c ess and the o p er ating
5, 463, 269
1 5
env ir o nm ent o f the dev ic e as l o ng as it adher es to the su r f ac e
62, o f l ay er 65. Fu r ther m o r e, o ne o r m o r e additio nal l ay er s,
as ex em p l i? ed b y l ay er 55, m ay b e f o r m ed o v er l ay er 25, o n
su r f ac e 32, and into the sec o ndar y c u sp 57 . The l ay er 55,
m ay hav e ter tiar y c u sp 8 7 . Lay er 55, has the sam e c o m p at
ib il ity r eq u ir em ents as disc u ssed and desc r ib ed f o r l ay er 25,
and it m u st al so adher e to the su r f ac e 32, o f the l ay er 25.
Af ter the f o r m atio n o f the c o m p o site o r m u l til ay er ed em itter
68 , the dev ic e str u c tu r e p r o c essing c o ntinu es star ting with
the o p er atio ns il l u str ated in FI G. 6.
Means o f iso l ating and inter c o nnec ting m u l tip l e ? el d
em itter s, ex tr ac tio n el ec tr o des, and o ther el ec tr o des in u sef u l
el ec tr ic al c o n? g u r atio ns c an al so b e p r o v ided. This c an b e
do ne b ec au se, the el ec tr o de l ay er s inc l u ding the em itter
l ay er ar e ty p ic al l y g o o d c o ndu c to r s and as su c h, they c an b e
l itho g r ap hic al l y p atter ned b ef o r e the nex t l ay er is added to
f o r m iso l atio ns and inter c o nnec tio ns b etween em itter str u c
tu r es. Sim il ar l y , the asso c iated insu l ato r s c an b e l itho g r ap hi
c al l y f eatu r ed to p r o v ide v ia o p ening s f o r v er tic al inter c o n
nec tio ns. One u se o f su c h p atter ning is in the c r eatio n o f a
disp l ay dev ic e. Fo r ex am p l e, FI G. 8 , c o u l d hav e an insu l a
tiv e su b str ate 1 0 , that is m ade f r o m a tr ansp ar ent m ater ial ,
su c h as g l ass o r q u ar tz , and the ano de l ay er 1 3, c o u l d b e a
c o ndu c tiv e p ho sp ho r , su c h as ZnO( Zn) o r c o m p r ised o f a
tr ansp ar ent el ec tr ic al l y c o ndu c tiv e l ay er and a p ho sp ho r
l ay er , r esu l ting in a l ig ht em itting dev ic e. El ec tr o ns em itted
f r o m the tip 27 , u nder the in? u enc e o f the el ec tr ic ? el d
p r o du c ed b y m o r e p o sitiv e v o l tag es o n the g r id and p ho s
p ho r wo u l d im p ing e o n the p ho sp ho r l ay er p r o du c ing l ig ht
whic h c o u l d b e v iewed thr o u g h the tr ansp ar ent su b str ate 1 0 .
Fu r ther m o r e, if in an ar r ay o f su c h l ig ht em itting dev ic es, the
g r id o r the ex tr ac tio n l ay er and the em itter l ay er ar e f o r m ed
into Xand Y addr essing l ines, indiv idu al o r g r o u p s o f su c h
l ig ht em itting dev ic es c an b e sel ec tiv el y ac tiv ated whic h
wo u l d f o r m a m atr ix addr essab l e disp l ay dev ic e. Ano ther
u se o f su c h p atter ning is the f o r m atio n o f g r o u p s o f indi
v idu al v ac u u m m ic r o el ec tr o nic dev ic es and p assiv e el ec
tr o nic el em ents, su c h as r esisto r s and c ap ac ito r s, that ar e
el ec tr ic al l y inter c o nnec ted du r ing f ab r ic atio n to f o r m inte
g r ated c ir c u its. Y et ano ther u se o f su c h p atter ning is the
f o r m atio n o f g r o u p s o f ac tiv e dev ic es, p assiv e dev ic es and
l ig ht em itting dev ic es that ar e inter c o nnec ted into el ec tr o nic
c ir c u its that el ec tr o nic al l y dr iv e, c o ntr o l , and sel ec t the
indiv idu al l y sel ec tab l e, indiv idu al o r g r o u p o f l ig ht em itting
dev ic es.
FI G. 1 2, is a p er sp ec tiv e c r o ss- sec tio nal v iewo f a p ar tial
str u c tu r e that wil l b e u sed to il l u str ate an ex am p l e o f sim p l e
inter c o nnec tio ns o f f o u r tr io des m ade ac c o r ding to the
p r o c ess o f this inv entio n, and the p r o c ess detail s hav e b een
disc u ssed ear l ier in r ef er enc e to FI G. 8 . I n the ? el d em itter
inter c o nnec t 8 0 , the em itter l ay er has b een l itho g r ap hic al l y
f eatu r ed into l ines whic h inter c o nnec t indiv idu al em itter s
8 4, in the X dir ec tio n and f o r m X em itter l ines 7 4. The
sp ac e 8 8 , iso l ates o ne X em itter l ine 7 4, f r o m ano ther X
em itter l ine 7 4. Sim il ar l y , the g r id o r ex tr ac tio n el ec tr o de
l ay er is l itho g r ap hic al l y f eatu r ed into Y el ec tr o de l ine 7 2,
with insu l ativ e m ater ial 8 5, ? l l ing the sp ac es and iso l ating
o ne Y el ec tr o de l ine 7 2, f r o m ano ther Y el ec tr o de l ine
7 2. I nstead o f o p en sp ac e 8 8 , o ne c o u l d al so hav e insu l ating
m ater ial ther e. I nsu l ating o r c u sp f o r m ing l ay er 8 5, sep ar ates
the indiv idu al ex tr ac tio n el ec tr o de 1 7 , o r Y el ec tr o de l ine
7 2, f r o m the indiv idu al em itter el ec tr o de 8 4 o r the X
em itter l ine 7 4. Al so , sho wn is the sec o ndar y c u sp 7 7 , that
wil l r esu l t f r o m the f o r m atio n o f the em itter tip 27 , nex t to
the ac c ess ho l es 29 o r 30 , adj ac ent to the sec o ndar y c u sp 7 7 .
Of c o u r se, it wo u l d b e o b v io u s to o ne sk il l ed in the ar t to
hav e m o r e than o ne el ec tr o de in this str u c tu r e b etween the
1 5
25
30
35
40
45
50
55
65
1 6
em itter el ec tr o de 8 4, and the ano de 1 3. This inter c o nnec tio n
ar r ang em ent al l o ws a p ar tic u l ar em itter to b e ac tiv ated b y
p u tting a neg ativ e p o tential o n a p ar tic u l ar em itter 8 4, in the
X em itter l ine 7 4, and a p o sitiv e p o tential o n a p ar tic u l ar
g r id o r ex tr ac tio n el ec tr o de 1 7 , o r Y el ec tr o de l ine 7 2.
FI G. 1 3, is sim il ar to the str u c tu r e as sho wn in FI G. 8 ,
ex c ep t it is a p er sp ec tiv e and a c u t- away v iewo f a ? nished
dev ic e 90 , sho wing the tip 27 , hav ing o f a b l ade ty p e p r o ? l e
and an el o ng ated sec o ndar y c u sp 97 . The m etho d o f m ak ing
the tip 27 , hav ing a b l ade p r o ? l e is ex ac tl y the sam e as
disc u ssed ear l ier in r ef er enc e to FI G. 8 . FI G. 1 3, al so sho ws
that a p l u r al ity o f ac c ess ho l es 29, and 30 , c an b e u sed to
hel p f ac il itate the r em o v al o f m ater ial u nder neath the c u sp
23.
W hil e the p r esent inv entio n has b een p ar tic u l ar l y
desc r ib ed, in c o nj u nc tio n with a sp ec i? c p r ef er r ed em b o di
m eu t, it is ev ident that m any al ter nativ es, m o di? c atio ns and
v ar iatio ns wil l b e ap p ar ent to tho se sk il l ed in the ar t in l ig ht
o f the f o r eg o ing desc r ip tio n. I t is ther ef o r e c o ntem p l ated that
the ap p ended c l aim s wil l em b r ac e any su c h al ter nativ es,
m o di? c atio ns and v ar iatio ns as f al l ing within the tr u e sc o p e
and sp ir it o f the p r esent inv entio n.
W hat is c l aim ed is:
1 . An integ r ated v ac u u m m ic r o el ec tr o nic dev ic e c o m p r is
ing an el ec tr o n- em itting m ater ial hav ing at l east o ne ? el d
em issio n tip and at l east o ne ac c ess ho l e that l eads into a
c ham b er , wher ein said ? el d em itter tip f ac es an ano de whic h
is in said c ham b er and is sep ar ated b y at l east o ne insu l ating
m ater ial , and wher ein at l east a p o r tio n o f said at l east o ne
ac c ess ho l e in said el ec tr o n- em itting m ater ial f ac es said
ano de.
2. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , f u r ther c o m p r ises at l east two dev ic es and wher ein at l east
a p o r tio n o f o ne o f said dev ic e is el ec tr ic al l y c o nnec ted to
said sec o nd dev ic e.
3. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , wher ein said insu l ating m ater ial f u r ther c o m p r ises o ne o r
m o r e additio nal insu l ating m ater ial s sep ar ated b y at l east
o ne el ec tr ic al l y c o ndu c tiv e m ater ial .
4. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , wher ein said el ec tr o n- em itting l ay er is m u l til ay er ed.
5. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , wher ein at l east o ne tip is m u l til ay er ed.
6. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , f u r ther c o m p r ising o n the tip side o f the el ec tr o n- em itting
l ay er at l east o ne b ar r ier l ay er , whic h is sel ec tiv el y r em o v ed
to ex p o se said tip .
7 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , wher ein said tip has a c o ating o f a sec o nd el ec tr o n
em itting m ater ial .
8 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , wher ein said tip is shar p ened.
9. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f c l aim
1 , f u r ther c o m p r ises at l east two dev ic es, wher ein at l east a
p o r tio n o f o ne dev ic e is el ec tr ic al l y iso l ated f r o m a p o r tio n
o f said sec o nd dev ic e.
1 0 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein at l east a p o r tio n o f said dev ic e is el ec tr i
c al l y c o nnec ted to a p o r tio n o f at l east o ne p assiv e dev ic e.
1 1 . An integ r ated v ac u u m m ic r o el ec tr o nic dev ic e c o m
p r ising an el ec tr o n- em itting m ater ial hav ing at l east o ne ? el d
em issio n tip and at l east o ne ac c ess ho l e that l eads into a
c ham b er , wher ein said ? el d em itter tip f ac es an ano de whic h
is in said c ham b er and is sep ar ated b y at l east o ne insu l ating
m ater ial , and wher ein said tip has a sec o ndar y c u sp .
1 2. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said tip has a p o int o r a b l ade p r o ? l e.
5, 463, 269
1 7
1 3. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said ? el d em issio n tip p r ef er ab l y has a
r adiu s o f b etween l 0 to 1 0 0 nm .
1 4. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 2, wher ein at l east o ne o f said dev ic es has a ? el d
em issio n tip that has a p o inted p r o j ec tio n.
1 5. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 2, wher ein at l east o ne o f said dev ic es has a ? el d
em issio n tip that has a b l ade p r o ? l e.
1 6. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said ? el d em issio n tip f ac es a su b str ate and
wher ein said ano de is o n the su b str ate side o f said integ r ated
v ac u u m m ic r o el ec tr o nic dev ic e.
1 7 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said su b str ate is the ano de.
1 8 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said el ec tr o n- em itting m ater ial is sel ec ted
f r o m a g r o u p c o m p r ising Mo , W , Ta, Re, Pt, Au , Ag , Al , Cu ,
N b , N i, Cr , Ti, Zr , Hf and al l o y s ther eo f o r so l id so l u tio ns
c o ntaining two o r m o r e o f these el em ents.
1 9. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein the m ater ial f o r said ano de is sel ec ted f r o m
a g r o u p c o m p r ising Mo , W , Ta, Re, Pt, Au , Ag , Al , Cu , N b ,
N i, Cr , Ti, Zr , Hf and al l o y s ther eo f o r so l id so l u tio ns
c o ntaining two o r m o r e o f these el em ents.
20 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said el ec tr o n- em itting m ater ial is sel ec ted
f r o m a g r o u p c o m p r ising do p ed and u ndo p ed sem ic o ndu c
to r s.
21 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said insu l ating m ater ial is sel ec ted f r o m a
1 5
25
1 8
g r o u p c o m p r ising sap p hir e, g l ass o r o x ides o f Si, Al , Mg and
Ce.
22. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 2, wher ein at l east o ne tip o f o ne o f said dev ic e is
m u l til ay er ed.
23. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said dev ic e is stac k ed o n to p o f o ther
tec hno l o g y and el ec tr ic al l y c o nnec ted ther eto .
24. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , f u r ther c o m p r ises at l east two dev ic es, and wher ein
o ne o f said dev ic e is stac k ed o n to p o f said sec o nd dev ic e.
25. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein at l east a p o r tio n o f said c ham b er has a
p r o ? l e wher e the dim ensio ns o f the c ham b er ar e c o nstant
with dep th.
26. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein at l east a p o r tio n o f said c ham b er has a
p r o ? l e wher e the dim ensio ns o f the c ham b er v ar y with
dep th.
27 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said ano de is o f a sem ic o ndu c to r m ater ial .
28 . The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said ano de is o f a sem ic o ndu c to r m ater ial ,
and wher ein said sem ic o ndu c to r m ater ial has el ec tr ic al l y
b iased P N j u nc tio ns to c r eate an el ec tr ic al l y iso l ated r eg io n
in said ano de.
29. The integ r ated v ac u u m m ic r o el ec tr o nic dev ic e o f
c l aim 1 , wher ein said ano de is o n an insu l ativ e su b str ate.