On rationale of Box-Triangular Germanium profile in SiGe HBTs

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This work analyses the physis of eletron motion aross SiGe !ase in SiGe HBTs" owin# to different aeleratin# eletri
fields$ The study e%pliates the ad&anta#e of shifted-Ge profile and optimi'ed p-type !ase dopin# in !ase to minimi'e the
eletron transit time aross !ase of n-p-n-SiGe HBTs$ (n addition" a !o%-trian#ular Ge-profile in SiGe !ase is pro)eted to
simultaneously minimi'e the eletrons transit time and inrease urrent #ain for SiGe HBTs$ The analysis orro!orates that for
an a&era#e Ge-dose of *$+, Ge aross !ase" an optimi'ed !o%-trian#ular shifted-Ge profile in on)untion with an optimum
!ase dopin# profile has an appro%imately idential !ase transit time and a -., hi#her urrent #ain" in omparison with an
optimum !ase dopin# and trian#ular Ge-profile aross whole !ase$
Key words-SiGe HBTs/ !ase transit time/ optimum !ase dopin#/ shifted Ge profile/ !o%-trian#ular SiGe !ase
1 Introduction
The !i##est ad&anta#e of SiGe hetero)untion tehnolo#y
!ased solid state de&ies is their hi#h ut-off fre0ueny 1ft2 and
ma%imum fre0ueny of osillation 1fmax2 34" 56$ The most
important parameter related to the speed of n-p-n !ipolar
transistors in #eneral" is the minority arrier7s 1eletron2 transit
time 1tB2 aross !ase" i$e$ the time taken !y minority eletrons
in)eted from n-type emitter to ross the p-type !ase$ (n
homo)untion !ipolar transistors" an aeleratin# filed for
eletrons an !e ahie&ed !y tailorin# the distri!ution of p-type
dopants in the !ase re#ion 3-" 86$ This aeleratin# field in !ase
aids the eletrons motion towards olletor and pro&ides a
minimum tB$ Apart from the dopant distri!ution in !ase" the
#ermanium profile in p-type !ase of n-p-n-SiGe HBTs an also
!e used to reate desired aeleratin# eletri field to ahie&e
minimum !ase transit time 1tBmin2 for eletrons$ The desi#n of
Ge profile to #et tBmin in SiGe HBTs 1e%ludin# p-type !ase
dopin# profile effet2 has !een studied omprehensi&ely in
literature 3+-4*6$ Salmon et al. 396 and :im et al$ 3;6 onsidered
a non-uniform !ase dopin# profile 1resem!lin# Gaussian2 while
analy'in# Ge profile effet on ft without aountin# for the
effet of !ase dopin#$ :wok et al. 3496 #a&e tB dependene on
Ge profile only for uniform and Gaussian dopin# profiles"
whereas <han# et al. 3446 optimi'ed Ge profile in !ase for
=interton7s 3-6 optimi'ed !ase dopin# profile$ >ulian et al. 3456
used different sets of !ase dopin# and Ge profile to #et tBmin$
?ihey et al. 34-6 and @atri et al. 34;6 onsidered speifi
1e%ponential" epita%ial and uniform2 !ase dopin# for different
Ge profile to optimi'e urrent #ain 12 and tB rather than
onsiderin# simultaneous optimi'ation of !ase dopin# profile$
>oshi et al. 3+6 proposed a #eometri pro#rammin# approah to
simultaneously ahie&e the optimi'ed !ase dopin# and Ge
profile in SiGe HBTs$ Howe&er" the proedure in&ol&es a
speial type of mathematial optimi'ation pro!lem and
re0uires a dediated G@ sol&er tools like AOSE: G@ sol&er
3486$
The studies on Ge profiles 34+" 4B6 point out that the
trian#ular Ge profiles are !est suited to #et tBmin$ Howe&er" there
has not !een any effort to e%amine the effet of &aryin# the Ge
profile for ahie&in# hi#her, as well as the orrespondin#
optimi'ed !ase dopin# profile to #et tBmin$ (n this work" we
initially onsidered the trian#ular Ge profile to #et tBmin in SiGe
HBTs and adopted an iterati&e approah to arri&e at optimi'ed
!ase dopin# profile$ (n this proess we arri&ed at a fi#ure of
merit 1FOM2 defined as the ratio of and tB for different linear
Ge profiles for a fi%ed Ge-dose$ Ainority arrier &eloity
saturation effet 1VSE2 on tB in SiGe HBTs is also studied$ The
shifted-Ge profile with an optimi'ed !ase dopin# pro&ides the
tBmin$ Cinally" it is shown that a Bo%-Trian#ular Ge-profile in
!ase alon# with optimi'ed !ase dopin# profile an lead to
simultaneous optimi'ation of Ge-dose in term of base transit
time and current gain, and thus redued emitter delay and
redued base seet resistance$
2 Theory
The !and#ap of Ge 1 .$BB eD2 is si#nifiantly smaller than
that of Si 1 4$45 eD2$ By inorporatin# Ge into the !ase re#ion
of a Si !ipolar transistor" the !and#ap of the !ase re#ion" and
hene the aompanied de&ie harateristis an !e modified
35.6$ The drift field for eletrons in the !ase an !e ma%imi'ed
!y ha&in# the lar#est Ge onentration near the !ase-olletor
)untion and the smallest near the emitter-!ase )untion 3546$
The SiGe HBTs reali'ed usin# suh a trian#ular Ge profile are
ustomarily knows as #raded-!ase-!and#ap transistors$ Cor
onstant !ase dopin#" the ratio of tB for SiGe HBT 11tBSi!e22 and
Si B>T 1tBSi22 de&ies an !e #i&en as 34+6:
2 4 1 2 e%p1 4 4
5
2 1
2 1 2 1

1
1
]
1

,
_

"T
E
E
"T
E
"T
t
t
BE B# !
BE B# ! BE B# ! BSi
BSi!e

where

1
]
1

+
B d
nB
nB
B
BSi
$ %
&
&
$
t
5
4
5
4
5
4
where" d is the drift &eloity of minority arriers" $B is !ase
width" &nB is eletron diffusion oeffiient in !ase" ' is the
Bolt'mann7s onstant" T is a!solute temperature in :el&in" and
is the strain indued inrease in eletron mo!ility with
inreasin# Ge,$ The total !and#ap redution due to the
#radin# of the Ge aross the neutral !ase is #i&en as E!(B#-BE)
1EE!(B#) - E!(BE22" where E!(BE) and E!(B#) are the Ge
indued redution in the !and#ap of SiGe !ase at emitter-!ase
and olletor-!ase ed#e of the 0uasi-neutral !ase$ The total
!and#ap narrowin# E!(B#-BE) 1E E!,Si!e2 is a funtion of the
total Ge-slope 1!e*2 aross SiGe !ase 34B6:
( ) 2 5 1 F B99 meV !e E
!

E0uation 142 in on)untion with 152 states that tBmin will !e
o!tained for the ma%imum Ge-slope inside the 0uasi-neutral
!ase orrespondin# to the Ge-dose inside !ase 34+6$
An iterati&e methodolo#y has !een desri!ed elsewhere 3556
to o!tain optimum !ase dopin# profile in homo)untion !ipolar
de&ies$ The methodolo#y has !een modified in present study
to optimi'e !ase-dopin# profiles in SiGe HBTs" !y inludin#
the effet of Ge indued !and#ap narrowin# for intrinsi arrier
onentration and arriers diffusi&ity oeffiients$ The resultant
effeti&e intrinsi-arrier onentration 1nieB,Si!e2 for SiGe HBTs
with trian#ular Ge-profile assumes the form:
2 - 1 e%p e%p
" 5 5
"

,
_

1
1
]
1

,
_

B
Si!e ! gB
i Si!e ieB
$
x
"T
E
"T
E
n n
where is a onstant aountin# for the redution in the
effeti&e density of states with inreasin# Ge," ni is intrinsi
arrier density 1E4$+ 4.
4.
m
--
2" EgB is the !and#ap
narrowin# parameter in the !ase" Gx7 defines the loation inside
!ase" and in ase of a trian#ular Ge profile E!(B#-BE) E E!(B#) +
E!,Si!e$
Similarly" the arrier diffusion oeffiient 1&nB,Si!e2 in SiGe
HBT for a trian#ular Ge-profile in !ase is e%pressed as:
2 8 1
F
4
"

,
_

+
B
Si!e
nB Si!e nB
$
x !e '
& &
where 'Si!eE- 34;46$
Aordin#ly" the modified eletri field profile inside !ase is
#i&en as:
2 + 1
4 4 4
2 1
"

,
_

,
_

,
_

dx
E d
, dx
E d
, dx
dp
p ,
"T
base p
Si!e ! gB p
p
Si!e

The third term in ?$H$S$ of 1+2 ompensates for the effet of

retardin# eletri field in !ase due to hea&y dopin# effet" and
would assist in reduin# !ase transit time$ The minimum &alue
of tB for a partiular trian#ular-Ge profile #i&es the
orrespondin# optimi'ed !ase dopin# profile$
3 Analyses of Ge-slope effect on electron transit time
(n present study" a pratially reasona!le profile in !ase is
onei&ed !y forin# a ondition that the peak !ase dopin#
ne&er e%eeds the dopin# at emitter ed#e of !ase and it is ne&er
less than the dopin# at the olletor ed#e$ A peak !ase dopin#
-Bmax of 4 4.
4;
m
--
at emitter ed#e of !ase and a minimum
!ase dopin# -Bmin of 5 4.
4*
m
--
at olletor ed#e of !ase has
!een hosen to inlude the !and #ap narrowin# effet in the
entire !ase re#ion for a neutral !ase width of .$4 miron 3556$
Ci#ure 4 shows the &arious Ge profile onsidered in the
analysis" where a fi%ed Ge-dose e0ui&alent to uniform 45$+,
Ge inside the !ase of SiGe HBT is onsidered to maintain the
sta!le strained SiGe !ase for .$4 m !ase width 35-6$ The fi%ed
Ge dose is then di&ided inside !ase in trape'oidal profile
manner$ A linear Ge ramp ha&in# ., Ge at emitter-!ase
)untion with 5+, Ge at !ase-olletor )untion 1Ge-slope of
5+,2" and a uniform !o% type 45$+, Ge profile 1Ge-slope of
.,2 inside !ase are taken as two e%treme ases of trape'oidal
Ge profile in present study$ (n addition" the analysis is also
done for Ge-slope of 54," 4+," ;, and +, aross !ase$ The
assoiated !and#ap narrowin# effet due to the #radin# of the
Ge aross the neutral !ase are: 1E!(B#-BE)2 E 4*5 meD 1for 5+,
Ge slope2" 488$89 meD 1for 54, Ge slope2" 4.-$5 meD 1for
4+, Ge slope2" B4$;5 meD 1for ;, Ge slope2" -8$8 meD 1for
+, Ge slope2 $
Ci#$ 4--Hifferent Ge profiles used for analy'in# optimum !ase
dopant distri!ution for minimum !ase transit time$ All profiles
ha&e fi%ed Ge dose e0ui&alent to uniform 45$+, Ge in !ase"
while &aryin# the Ge slope$
The iteration methodolo#y is applied for the different Ge
profiles shown in Ci#$ 4" and the results for optimi'ed !ase
dopin# profile are shown in Ci#$ 5$ The results predit that an
inreasin# Ge-slope 1for fi%ed Ge dose in !ase2 leads towards
an optimi'ed !ase dopin# profile with lower !ase Gummel
num!ers until a Ge-slope of I 54, is reahed$ Je&ertheless" tB
shows a ontinuous redution with an inreasin# Ge-slope$ (n
addition" to analy'e the effet of inreasin# Ge dose 1and
orrespondin# Ge slope2 on tB" three different linear Ge profiles
with 5+, Ge" 8., Ge and B., Ge at !ase-olletor )untion
1not shown in fi#ure2" orrespondin# to 45$+," 5., and -.,
a&era#e Ge onentration in !ase" respeti&ely" are studied
1while rela%in# ritial thikness limit onstraint2$ The !and#ap
redution due to the #radin# of the Ge, aross the neutral !ase
are 4*5meD" 5*+$5 meD and 845$9 meD for 5+," 8., and
B., Ge slope aross !ase" respeti&ely$ The optimi'ed !ase
5
dopant profiles for these Ge-slopes ha&e !een found idential
as that for 54, Ge-slope profile in Ci#$ 5$ Je&ertheless" tB of
.$+9 ps" .$-+ ps and .$54 ps has !een alulated for 5+," 8.,
and B., Ge-slope aross !ase" respeti&ely$ Therefore" tB
shows a ontinuous derease with inreasin# Ge-dose 1and Ge-
slope2 in !ase$
Ci#$ 5--Optimi'ed !ase dopin# profiles and orrespondin#
eletron transit time aross !ase for different Ge-slope profiles$
All profiles ha&e fi%ed Ge dose e0ui&alent to uniform 45$+,
Ge in !ase" while &aryin# the Ge-slope aross the !ase$
4 Figure of merit for o!-triangular "iGe #$T
(n !o%-trian#ular 1trape'oidal2 Ge-profile SiGe HBTs" hi#h
in)etion effiieny ould !e used to allow an inrease in !ase
dopin# to ahie&e hi#h ma%imum osillation fre0ueny 34;6$ A
!o%-trian#ular profile has an additional ad&anta#e of a!sene
of in&erse-Early effet" whih is an issue for trian#ular Ge
profile SiGe HBTs$ The ratio of !etween a SiGe HBT and a
Si B>T is #i&en as 34+6:
2 B 1 e%p
e%p 4
2 1
2 1
2 1

1
]
1

,
_

1
1
1
1
]
1

,
_

"T
E
"T
E
"T
E
BE !
BE B# !
BE B# !
Si
Si!e

where
B pE B
E nB E
Si
- & $
- & $

where" the parameter is the strain indued inrease in
minority arrier mo!ility in !ase of SiGe HBT" &pE is hole
diffusion oeffiient in emitter" and $E and -E are the emitter
re#ion thikness and dopin#" respeti&ely$ The first term on
?HS of E0$ 18$B2 is due to Ge ramp inside !ase and the seond
term is due to Ge onentration present in !ase at emitter-!ase
)untion ed#e$
Cor different Ge profiles onsidered in Ci#$ 5" we ha&e
defined a fi#ure-of-merit 1FOM2 as the ratio of urrent #ain
and !ase transit time 1 . tB2$ A ma%imum &alue for this FOM
is desired to #et the ma%imum ad&anta#e of redued tB and for
tradin# off the hi#h to derease the !ase sheet resistane$
Another important aspet of this FOM in present day SiGe
HBT de&ies omes from the fat that emitter delay will start
playin# a si#nifiant role" !eause a &ery low tB an !e
o!tained in these de&ies !y usin# a &ery thin !ase and
pro&idin# ramp in the Ge onentration in the !ase re#ion$ To
keep the emitter delay at a low &alue" of the de&ie must !e
kept hi#h 34;6$ Curther" a hi#h #i&es a hi#her olletor
urrent for same !ias onditions" and inreases the ut-off
fre0ueny 3586$ So in present day hi#h fre0ueny SiGe HBT
de&ies" . tB an !e treated as a !asi FOM$ Ta!le 4 #i&es the
&alues of !ase transit time" urrent #ain" and . tB for different
Ge, slope inside !ase for a fi%ed e0ui&alent dose of uniform
45$+, Ge in !ase$
TABKE 4$ FOM CO? BOL-T?(AJGMKA? SiGe HBT
Ta!le 4 show that a ma%imum in the FOM 1.tB2 is ahie&ed
!etween a Ge-slope of a!out 44, to 4-, Ge slope inside !ase
for the urrently hosen !ase struture and onstraints$ Ge
profiles ha&in# a slope !elow 44, Ge show a hi#h !ut an
inreased tB" while profiles ha&in# Ge-slope a!o&e 4-, Ge
show redued tB !ut orrespondin# inrease is lower$ A plot
of the &ariation of FOM 1 . tB2 as a funtion of Ge, differene
!etween emitter-!ase )untion and !ase-olletor )untion is
shown in Ci#$ -$ (t is thus proposed that in the present ase" a
Ge,-differene !etween emitter-!ase and !ase-olletor
)untion of 44, to 4-, should !e kept" and rest of the Ge-dose
must !e used to raise the Ge-onentration at emitter-!ase
)untion for hi#her $
-
Ci#$ ---Ci#ure-of-merit 1.tB2 as a funtion of Ge, differene
!etween emitter-!ase and !ase-olletor )untion$
% &elocity saturation effect in triangular "iGe #$T
(t has !een shown that the inlusion of minority arrier
&eloity saturation effet 1VSE2 in homo)untion and
hetero)untion !ipolar transistors inreases tB 35+6$ Howe&er"
the results in Ci#$ 8 show a tendeny of decreasing VSE on
inrease in !ase transit time" as the Ge-slope aross !ase is
inreased$ A perenta#e inrease of -.$B" 59$B" 5B$;" 5B$. and
5+$* is o!ser&ed in the !ase transit time for inreasin# slope of
." +" 4." 4+ and 5+ perent Ge-slope aross !ase" respeti&ely$
Therefore" it an !e stated that a hi#her onentration #radient
of Ge inside !ase" in on)untion with optimum !ase dopin#
profile" partially ompensates an inrease in tB due to &eloity
saturation of minority arriers$
Ci#$ 8NEletron transit time aross !ase as a funtion of
&arious linear Ge, slope" for optimi'ed !ase dopin#" with-and-
without &eloity saturation effet inlusion$
A further insi#ht to this phenomenon is o!tained !y
in&esti#atin# the &ariation of eletron apparent &eloity G% (x)7
inside !ase" for .," +," 4., and 4+, Ge-slop" as shown in
Ci#$ +$ The results show that in ase of optimi'ed !ase dopin#
profile ha&in# ., Ge-slope 1homo)untion or uniform-Ge in
!ase2 the apparent &eloity G% (x)7 saturation at x E .$98B$B$
=hereas" the apparent &eloity saturates at lower &alues of
frational !ase width of .$9..$B" .$*5*$B and .$+*B$B with
+," 4., and 4+, Ge-slope aross !ase re#ion" respeti&ely$
Two distint phenomenon o!ser&ed in Ci#$ + are:
i2 Cor inreasin# Ge-slope in !ase" a hi#her drift &eloity
for eletrons is ahie&ed for smaller &alues of distane
tra&eled in !ase 1!efore the &eloity saturation2$ This
will redue tB with inreasin# Ge-slope as shown in Ci#$
8$
ii2 Cor inreasin# Ge-slope in !ase" the earlier attainment of
eletron7s saturation &eloity for lower frational !ase
widths" will inreases the !ase transit time when VSE is
inluded in tB calculations$ This effet is also learly
&isi!le in Ci#$ 8$
Ci#$ +--Eletron apparent &eloity as a funtion of distane for
&arious linear Ge, slope aross !ase" with &eloity saturation
effet inlusion$
' $o!-triangular Ge-profiles
The shifted-Ge linear profile further minimi'es tB of SiGe
HBTs 35B6$ This ad&anta#e an !e traded-off to inrease or
reduin# the !ase resistane of the SiGe HBT de&ie" !y
onfi#urin# a trape'oidal 1or !o%-trian#ular2 Ge-profile or !y
inreasin# the !ase dopin#" respeti&ely$ (n ase where tB
happens to !e lower than the emitter delay term" the optimum
shifted-linear Ge-profile must !e han#ed to !o%-trian#ular
type inside !ase" while keepin# tB ompara!le to the emitter
delay term$ The seletion of suh a profile will inrease"
remo&es in&erse Early effet" and redues the emitter delay
term 34;6$ An inreased for SiGe HBT as #i&en in 1B2 an also
!e traded off to redue the !ase sheet resistane" whih is
neessary to ahie&e a hi#h fmax$
To illustrate our point" we ha&e taken the ase of Ge-
dose e0ui&alent to uniform *$+, Ge aross !ase$ Ci#ure B
shows that when a linear Ge-profile of 4+, Ge slope aross
total !ase width is used" the tB 1with VSE2 for optimi'ed !ase
dopin# profile is 4$49 ps$ Ci#ure B also shows that when for the
same dose" the Ge-profile is shifted inside neutral !ase 1!y
a!out 4*$-, of $B from the emitter-!ase ed#e" and the
respeti&e Ge-slope is raised to a!out 49$4-*, in the
remainin# 95$*, of $B2" tB is redued to 4$.B ps$ Howe&er" in
!oth ases shown in Ci#$ B" the Ge-onentration is ., at
emitter-!ase ed#e$ So" seond term on ?HS in 1*2 is unity and
for !oth the strutures is likely to !e same$
8
Ci#$ B--Optimi'ed !ase dopin# profiles with-and-without
shifted Ge-profile inside !ase for Ge-dose e0ui&alent to
uniform *$+, Ge aross !ase$
(n ase the Ge-profile is shifted inside neutral !ase !y
a!out 4*$-, of $B from the emitter-!ase ed#e" and the
respeti&e Ge-slope is kept to a!out 4+$*, in the remainin#
95$*, of !ase width" tB inreases to 4$49 ps on aount of
lower slope of Ge onentration in !ase$ This is idential to tB
of 4$49 ps for a linear Ge-profile of 4+, Ge-slope aross total
!ase width$ Howe&er" for this 4+$*, Ge-slope profile" a !o%-
trian#ular profile ha&in# appro%$ 4$., Ge-onentration at
emitter-!ase )untion an !e kept for the same Ge-dose as for
4+, Ge-slope aross total !ase width$ The finite Ge-
onentration at emitter-!ase )untion effeti&ely inreases the
for this Ge-profile !y -.," while keepin# appro%$ same tB
in omparison with the linear Ge-profile of 4+, Ge-slope
aross total !ase width$
To omplete enhanement study in SiGe HBTs" it is
important to analy'e the effet of linear 4+, Ge-ramp aross
total !ase width 1say profile-52 and 4+$* , Ge slope aross
.$95*$B after Ge-shift of .$4*-$B from emitter-!ase ed#e
1profile-42" on the first term on ?HS of 1*2$ This Ge-slope
indued enhanement term an also lead to an inrease in
total urrent #ain$ Assumin# similar !ase dopin# profiles" a
simplified e%pression for ratio of enhanement due to Ge-
slope in any 5 different linear Ge-slope profiles aross similar
!ase width an !e #i&en as:
2 9 1
5
4
5
4
4 " 4
5 " 5
5
4

1
1
1
1
]
1

"T
t E
"T
t E
B Si!e !
B Si!e !

where" E!/,Si!e and E!0,Si!e are the !and#ap redution

due to the #radin# of Ge aross neutral !ase and tB/ and tB0 are
the !ase transit time for the two profiles" respeti&ely$
@rofile-4 and profile-5 ha&e almost idential tB of
4$49B ps and 4$499 ps" respeti&ely$ Howe&er" as the two Ge-
profiles o&er different len#th of neutral !ase re#ion" the
relati&e effet of Ge-ramp on the enhanement is not e%atly
lear for the two profiles$ Howe&er" an insi#ht an !e #ained !y
omparin# the apparent &eloities of minority arriers inside
!ase for !oth these profiles$ This is due to the fat that
enhanement owin# to Ge-slope inside !ase re#ion is diretly
dependent on the effiient minority arrier mo&ement in !ase
and hene on their drift &eloity$ Therefore" as tB for the two
profiles are almost idential" the urrent #ain term dependent
on minority arrier drift &eloity an !e assumed to !e idential
for these two profiles$
The effets of eletron apparent &eloity on tB for two
profiles under onsideration are shown in Ci#$ *$
Ci#$ *--Eletron apparent &eloity as a funtion of distane for
Ge-profile ha&in# 4+$* , Ge-slope aross .$95*$B after Ge-
shift of .$4*-$B from emitter-!ase ed#e 1profile-42 in
omparison with the Ge-profile ha&in# linear 4+, Ge-ramp
aross total !ase width 1profile-52$
Ci#ure * predits that due to the a!sene of any Ge-slope
near emitter-!ase )untion ed#e in !ase for profile-4" the
minority arrier aelerate to a hi#h &eloity 1O ; % 4.
B
mPse2
inside !ase somewhat later than in omparison with profile-5$
Howe&er" the minority arriers in profile-4 #et aelerated to
their saturation &eloity earlier due to a hi#her Ge-slope after a
distane of .$4*-$B from emitter-!ase )untion ed#e$ The
resultant of these two fats has led to an effeti&ely idential tB
for profile-4 and profile-5 in present ase and an !e assumed
to ahie&e idential enhanement due to their respeti&e Ge-
ramp and optimi'ed !ase dopin# profiles in the !ase$
Therefore" profile-4 promises an appro%$ -., inrease in
total in omparison with profile-5 due to finite 14,2 Ge-
onentration at emitter-!ase )untion ed#e$ This inrease in
would redue the emitter-delay term !y appro%$ -., in profile-
4 in omparison with profile-5 34;6$
The optimum !ase dopin# profiles for profile-4 and profile-5
are shown in Ci#$ 9$ The shifted Ge-profile 1profile-42 shows an
optimum !ase dopin# with iger !ase !ummel number in
omparison with profile-5" whih is an additional ad&anta#e for
ahie&in# lower !ase sheet-resistane for the orrespondin#
optimi'ed !ase dopin#$ Therefore" a shifted-Ge profile an !e
used for ahie&in# hi#her fmax !y reduin# tB" andPor inreasin#
the 1thus reduin# the emitter delay !y usin# !o%-trian#ular
SiGe !ase2 andPor inreasin# !ase Gummel num!er 1thus
reduin# the !ase sheet-resistane2$
+
Ci#$ 9--Optimum !ase dopin# profiles as a funtion of distane
for Ge-profile ha&in# 4+$* , Ge-slope aross .$95*$B after
Ge-shift of .$4*-$B from emitter-!ase ed#e 1profile-42 in
omparison with the Ge-profile ha&in# linear 4+, Ge-ramp
aross total !ase width 1profile-52$
( )onclusions
This paper studies the linear Ge-slope profile in !ase"
presuma!ly the !est option to redue tB in SiGe HBTs" in
on)untion with optimum !ase dopin#$ The analysis shows a
redution in tB with inreasin# Ge-slope inside !ase" while the
orrespondin# optimi'ed !ase dopin# profile shows a trend
towards lower !ase Gummel num!er$ Cor an optimi'ed !ase
dopin# profile" 1with a Ge-dose e0ui&alent to uniform 45$+,
Ge-onentration in !ase2" the dependene of COA 1 . tB2 on
the Ge distri!ution in !ase predits a !est ompromise for the
Ge slope &aryin# !etween 44-4-, aross the !ase re#ion while
rest of the Ge-dose determines the pedestal hei#ht of Ge-
onentration at emitter-!ase )untion$
Sine" the Ge-slope &irtually determines the drift field
in !ase" the redution in tB has also !een in&esti#ated !y
shiftin# the onset of Ge, 1!y a distane 1! away from emitter-
!ase )untion2 for inreasin# Ge-slope in the remainin# !ase
re#ion$ The shifted-Ge profile is o!ser&ed to redue tB !y a!out
4., in omparison with a linear Ge slope of 4+, aross the
!ase width $B" for an a&era#e Ge-dose of *$+, Ge aross !ase$
Cinally" it is shown that a Bo%-Trian#ular Ge-profile
alon# with optimi'ed !ase dopin# profile an lead to
simultaneous optimi'ation of and tB in SiGe HBTs$ Cor an
a&era#e Ge-dose of *$+, Ge aross !ase" an optimi'ed shifted-
Ge profile in on)untion with optimum !ase dopin# profile
shows an appro%imately idential tB and a -., hi#her in
omparison with a linear Ge-profile without shifted Ge-slope
aross !ase$
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