2N3903, 2N3904 General Purpose Transistors: NPN Silicon

2N3903, 2N3904
2N3903 is a Preferred Device
General Purpose
Transistors
NPN Silicon
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
40
Vdc
CollectorBase Voltage
VCBO
60
Vdc
EmitterBase Voltage
VEBO
6.0
Vdc
Collector Current Continuous
IC
200
mAdc
Total Device Dissipation

@ TA = 25C
Derate above 25C
PD
625
5.0
mW
mW/C
Total Device Dissipation

@ TC = 25C
Derate above 25C
PD
1.5
12
Watts
mW/C
55 to
+150
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RJA
200
C/W
Thermal Resistance,
Junction to Case
RJC
83.3
C/W
Operating and Storage Junction

Temperature Range
TJ, Tstg
2
BASE
1
EMITTER
STYLE 1
TO92
CASE 29
STYLE 1
1
2
3
MARKING DIAGRAMS
THERMAL CHARACTERISTICS (Note 1.)

Characteristic
2N
3903
YWW
Y
WW
1. Indicates Data in addition to JEDEC Requirements.
2N
3904
YWW
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N3903
TO92
5000 Units/Box
2N3903RLRM
TO92
2000/Ammo Pack
2N3904
TO92
5000 Units/Box
2N3904RLRA
TO92
2000/Tape & Reel
2N3904RLRE
TO92
2000/Tape & Reel
2N3904RLRM
TO92
2000/Ammo Pack
2N3904RLRP
TO92
2000/Ammo Pack
2N3904RL1
TO92
2000/Tape & Reel
2N3904ZL1
TO92
2000/Ammo Pack
Preferred devices are recommended choices for future use

and best overall value.
Semiconductor Components Industries, LLC, 2001
November, 2000 Rev. 3
Publication Order Number:

2N3903/D
2N3903, 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0)
V(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
Vdc
IBL
50
nAdc
ICEX
50
nAdc
20
40
35
70
50
100
30
60
15
30
150
300
0.2
0.3
0.65
0.85
0.95
250
300
OFF CHARACTERISTICS
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 2.)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
hFE
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)
CollectorEmitter Saturation Voltage (Note 2.)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
BaseEmitter Saturation Voltage (Note 2.)

VBE(sat)
Vdc
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
2N3903
2N3904
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
1.0
1.0
8.0
10
0.1
0.5
5.0
8.0
50
100
200
400
1.0
40
6.0
5.0
td
35
ns
tr
35
ns
ts
175
200
ns
tf
50
ns
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2N3903
2N3904
Voltage Feedback Ratio

X 104
hre
2N3903
2N3904
SmallSignal Current Gain

hfe
2N3903
2N3904
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
NF
2N3903
2N3904
mhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
2N3903
2N3904
Fall Time
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%.
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2
2N3903, 2N3904
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
275
+10.9 V
DUTY CYCLE = 2%
10 k
-0.5 V
+3 V
t1
10 < t1 < 500 s
275
10 k
0
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
-9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time

Equivalent Test Circuit
Figure 2. Storage and Fall Time

Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C
TJ = 125C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
Cibo
3.0
Cobo
2.0
1.0
0.1
VCC = 40 V
IC/IB = 10
3000
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
1000
700
500
100
70
50
20 30 40
QT
300
200
QA
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
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3
200
2N3903, 2N3904
500
t r, RISE TIME (ns)
tr @ VCC = 3.0 V
50
30
20
7
5
40 V
100
70
50
30
20
15 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC/IB = 20
7
5
200
5.0 7.0 10
20
30
50 70 100
Figure 5. TurnOn Time
Figure 6. Rise Time
IC/IB = 10
30
20
10
7
5
30
50 70 100
200
IC/IB = 10
30
20
7
5
20
IC/IB = 20
100
70
50
10
5.0 7.0 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
50
200
500
ts = ts - 1/8 tf
IB1 = IB2
IC/IB = 10
2.0 3.0
2.0 3.0
100
70
1.0
1.0
500
300
200
10
2.0 V
td @ VOB = 0 V
VCC = 40 V
IC/IB = 10
300
200
t f , FALL TIME (ns)
TIME (ns)
100
70
10
t s , STORAGE TIME (ns)
500
IC/IB = 10
300
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 7. Storage Time
Figure 8. Fall Time
200
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200

IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k

IC = 50 A
0
0.1

IC = 100 A
0.2
0.4
1.0
2.0
f = 1.0 kHz
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
14

IC = 1.0 mA
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 A
IC = 100 A
6
4
2
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
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4
40
100
2N3903, 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
5.0
10
Figure 12. Output Admittance
20
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
Figure 14. Voltage Feedback Ratio
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5
2N3903, 2N3904
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
-55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
TJ = 25C
VBE(sat) @ IC/IB =10
V, VOLTAGE (VOLTS)
1.0
0.8
VBE @ VCE =1.0 V

0.6
0.4
VCE(sat) @ IC/IB =10
VC FOR VCE(sat)
-55C TO +25C
-0.5
-55C TO +25C
-1.0
+25C TO +125C
VB FOR VBE(sat)
-1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
1.2
1.0
2.0
5.0
10
20
50
100
-2.0
200
20
40
60
80
100
120
140
160
Figure 17. ON Voltages
Figure 18. Temperature Coefficients
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6
180 200
2N3903, 2N3904
PACKAGE DIMENSIONS
TO92
TO226AA
CASE 2911
ISSUE AL
A
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
X X
G
H
V
C
SECTION XX
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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7
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
--STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N3903, 2N3904
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

Literature Fulfillment:
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For additional information, please contact your local
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2N3903/D

2N3903, 2N3904 General Purpose Transistors: NPN Silicon

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2N3903, 2N3904 General Purpose Transistors: NPN Silicon

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Available Formats

2N3903, 2N3904

2N3903 is a Preferred Device

Collector Current Continuous

Total Device Dissipation

Total Device Dissipation

Operating and Storage Junction

THERMAL CHARACTERISTICS (Note 1.)

1. Indicates Data in addition to JEDEC Requirements.

2000/Tape & Reel

2000/Tape & Reel

2000/Tape & Reel

Preferred devices are recommended choices for future use

November, 2000 Rev. 3

Publication Order Number:

CollectorEmitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0)

CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0)

EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0)

Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

BaseEmitter Saturation Voltage (Note 2.)

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Voltage Feedback Ratio

SmallSignal Current Gain

Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

10 < t1 < 500 s

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

0.5 0.7 1.0

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

t r, RISE TIME (ns)

Figure 5. TurnOn Time

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

t f , FALL TIME (ns)

t s , STORAGE TIME (ns)

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS

SOURCE RESISTANCE = 200

SOURCE RESISTANCE = 1.0 k

SOURCE RESISTANCE = 500

NF, NOISE FIGURE (dB)

SOURCE RESISTANCE = 200

RS, SOURCE RESISTANCE (k OHMS)

Figure 11. Current Gain

h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

h ie , INPUT IMPEDANCE (k OHMS)

Figure 12. Output Admittance

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

h FE, DC CURRENT GAIN (NORMALIZED)

TYPICAL STATIC CHARACTERISTICS

IC, COLLECTOR CURRENT (mA)

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)