2N492x (ON)

ON Semiconductor
2N4921
thru
2N4923 *
Medium-Power Plastic NPN

Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These highperformance plastic devices feature:
*ON Semiconductor Preferred Device
Low Saturation Voltage
1 AMPERE
GENERALPURPOSE
POWER TRANSISTORS
4080 VOLTS
30 WATTS
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp

Excellent Power Dissipation Due to Thermopad Construction
PD = 30 W @ TC = 25C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
Symbol
2N4921
2N4922
2N4923
Unit
VCEO
40
60
80
Vdc
CollectorBase Voltage
VCB
40
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current Continuous (1)
IC
1.0
3.0
Adc
Base Current Continuous
IB
1.0
Adc
Total Power Dissipation @ TC = 25C

Derate above 25C
PD
30
0.24
Watts
W/C
TJ, Tstg
65 to +150
C
Operating & Storage Junction

Temperature Range
3 2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 7709
TO225AA TYPE
THERMAL CHARACTERISTICS (2)

Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
JC
4.16
C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
Publication Order Number:

2N4921/D
2N4921 thru 2N4923
PD, POWER DISSIPATION (WATTS)
40
30
20
10
25
50
75
100
TC, CASE TEMPERATURE (C)
125
150
Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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2
2N4921 thru 2N4923
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
40
60
80
0.5
0.5
0.5
0.1
0.5
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (3)

(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N4921
2N4922
2N4923
Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
Vdc
ICEO
mAdc
2N4921
2N4922
2N4923

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125C
ICEX
mAdc

(VCB = Rated VCB, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
40
30
10
150
ON CHARACTERISTICS
DC Current Gain (3)

(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
CollectorEmitter Saturation Voltage (3)

(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
0.6
Vdc
BaseEmitter Saturation Voltage (3)

(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
1.3
Vdc
BaseEmitter On Voltage (3)

(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
1.3
Vdc
fT
3.0
MHz
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
100
pF
SmallSignal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
(3) Pulse Test: PW 300 s, Duty Cycle 2.0%.

*Indicates JEDEC Registered Data.
APPROX
+11 V
Vin
TURN-ON PULSE
5.0
t1
VCC
2.0
RB
Cjd<<Ceb
APPROX
+11 V
t3
SCOPE
Vin
APPROX 9.0 V
t2
TURN-OFF PULSE
-4.0 V
t1 15 ns
100 < t2 500 s
t3 15 ns
t, TIME (s)
Vin
VBE(off)
VCC = 30 V
IC/IB = 20
3.0
RC
1.0
0.7
0.5
0.3
0.2
0.1
DUTY CYCLE 2.0% 0.07
RB and RC varied to 0.05
obtain desired
current levels
IC/IB = 10, UNLESS NOTED

TJ = 25C
TJ = 150C
VCC = 60 V
td
VCC = 30 V
tr
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
Figure 2. Switching Time Equivalent Circuit
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. TurnOn Time
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3
500 700 1000
r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)
2N4921 thru 2N4923

1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
P(pk)
JC(t) = r(t) JC
JC = 4.16C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) JC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0

t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
7.0
5.0
5.0 ms
3.0
2.0
TJ = 150C
1.0
0.7
0.5
0.3
0.2
0.1
1.0
1.0 ms
There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C V CE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150C; T C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100 s
dc
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25C
PULSE CURVES APPLY BELOW
RATED VCEO
2.0 3.0
5.0 7.0 10
20 30
50 70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. ActiveRegion Safe Operating Area
5.0
5.0
3.0
1.0
0.7
0.5
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
IC/IB = 20
TJ = 25C
TJ = 150C
IB1 = IB2
ts = ts - 1/8 tf
10
20
30
200 300
50 70 100
IC/IB = 20
2.0
t f , FALL TIME (s)
t s, STORAGE TIME (s)
3.0
IC/IB = 20
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
500 700 1000
IC/IB = 10
10
Figure 6. Storage Time
20
30
50 70 100
200 300
Figure 7. Fall Time
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4
TJ = 25C
TJ = 150C
VCC = 30 V
IB1 = IB2
500 700 1000
1000
700
500
VCE = 1.0 V
300
200
hFE, DC CURRENT GAIN
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N4921 thru 2N4923
TJ = 150C
100
70
50
25C
-55C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500

1000 2000
1.0
0.8
108
1.0 A
TJ = 25C
0.4
0.2
0
0.2 0.3
0.5
1.0
2.0 3.0 5.0

10 20 30
IB, BASE CURRENT (mA)
50
100
200
1.5
IC = 10 x ICES
VCE = 30 V
TJ = 25C
107
1.2
IC = 2 x ICES
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
0.5 A
Figure 9. Collector Saturation Region
106
IC ICES
105
ICES VALUES
OBTAINED FROM
FIGURE 12
104
30
0.9
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.3
60
90
120
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0
10
20 30 50
150
100 200 300 500
TJ, JUNCTION TEMPERATURE (C)
Figure 10. Effects of BaseEmitter Resistance
Figure 11. On Voltage
104
TJ = 150C
103
100C
102
25C
101
IC = ICES
100
VCE = 30 V
10-1
10-2
-0.2
1000 2000
+2.5
REVERSE
-0.1
FORWARD
0
+0.1
+0.2
+0.3
+0.4
TEMPERATURE COEFFICIENTS (mV/ C)
IC, COLLECTOR CURRENT (A)
0.25 A
0.6
Figure 8. Current Gain
103
IC = 0.1 A
+2.0
*APPLIES FOR IC/IB
+1.5
+1.0
TJ = 100C to 150C
+0.5
*VC FOR VCE(sat)
-55C to +100C
-0.5
-1.0
-1.5
VB FOR VBE
-2.0
-2.5
2.0 3.0 5.0
+0.5
hFE@VCE 1.0V
2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10
20 30
50
100 200 300 500
Figure 12. Collector CutOff Region
Figure 13. Temperature Coefficients
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5
1000 2000
2N4921 thru 2N4923

PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
B
U
Q
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
V
G
S
R
0.25 (0.010)
D 2 PL
0.25 (0.010)
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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6
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
---
2N4921 thru 2N4923
Notes
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7
2N4921 thru 2N4923
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

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For additional information, please contact your local
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2N4921/D

2N492x (ON)

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ON Semiconductor

Medium-Power Plastic NPN

*ON Semiconductor Preferred Device

Low Saturation Voltage

VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp

Collector Current Continuous (1)

Base Current Continuous

Total Power Dissipation @ TC = 25C

Operating & Storage Junction

THERMAL CHARACTERISTICS (2)

Thermal Resistance, Junction to Case

(2) Recommend use of thermal compound for lowest thermal resistance.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 10

Publication Order Number:

2N4921 thru 2N4923

PD, POWER DISSIPATION (WATTS)

Figure 1. Power Derating

2N4921 thru 2N4923

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

CollectorEmitter Sustaining Voltage (3)

Collector Cutoff Current

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain (3)

CollectorEmitter Saturation Voltage (3)

BaseEmitter Saturation Voltage (3)

BaseEmitter On Voltage (3)

(3) Pulse Test: PW 300 s, Duty Cycle 2.0%.

IC/IB = 10, UNLESS NOTED

Figure 2. Switching Time Equivalent Circuit

Figure 3. TurnOn Time

500 700 1000

r(t), TRANSIENT THERMAL

2N4921 thru 2N4923

2.0 3.0 5.0

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMP)

There are two limitations on the power handling ability of

Figure 5. ActiveRegion Safe Operating Area

t s, STORAGE TIME (s)

500 700 1000

Figure 6. Storage Time

Figure 7. Fall Time

hFE, DC CURRENT GAIN

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

2N4921 thru 2N4923

20 30 50 100 200 300 500

2.0 3.0 5.0

RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

Figure 9. Collector Saturation Region

100 200 300 500

TJ, JUNCTION TEMPERATURE (C)

IC, COLLECTOR CURRENT (mA)

Figure 10. Effects of BaseEmitter Resistance

Figure 11. On Voltage

TEMPERATURE COEFFICIENTS (mV/ C)

IC, COLLECTOR CURRENT (A)

Figure 8. Current Gain

*APPLIES FOR IC/IB

*VC FOR VCE(sat)

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100 200 300 500