JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Transistors

C945

TRANSISTORNPN
TO92

FEATURES
Power dissipation

ICM:

1. EMITTER

Tamb=25

PCM:
0.4W
Collector current

2. COLLECTOR

0.15A
3. BASE

Collector-base voltage
V (BR) CBO: 60V
Operating and storage junction temperature range

1 2 3

T J T stg: -55 to +150

ELECTRICAL CHARACTERISTICSTamb=25
Parameter

Symbol

unless

Test

otherwise

conditions

specified
MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=1mA IE=0

60

Collector-emitter
voltage

V(BR)CEO

IC=100uA ,

50

V(BR)EBO

IE=100A

breakdown

Emitter-base breakdown voltage

IB=0
IC=0

Collector cut-off current

ICBO

VCB=60V , IE=0

0.1

Collector cut-off current

ICEO

VCE=45V

0.1

Emitter cut-off current

IEBO

VEB=5V ,

IC=0

0.1

A
A
A

hFE(1)

VCE=6 V , IC=1mA

70

700

hFE(2)

VCE=6 V , IC=0.1mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10m A

0.3

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10m A

DC current gain

Transition frequency

fT

200

VCE=6V, IC=10mA,f =30 MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MH Z

Noise figure

NF

VCE =6V,IC =0.1mA

Rg=10k,f=1kMHZ

MHz

3.0

pF

10

dB

CLASSIFICATION OF h FE(1)
Rank

GR

BL

Range

70-140

120-240

200-400

350-700

TO-92 PACKAGE OUTLINE DIMENSIONS

D1

A1

e
e1

Symbol

Dimensions In Millimeters

Dimensions In Inches

Min

Max

Min

Max

3.300

3.700

0.130

0.146

A1

1.100

1.400

0.043

0.055

0.380

0.550

0.015

0.022

0.360

0.510

0.014

0.020

4.400

4.700

0.173

0.185

D1

3.430

4.300

0.135
4.700

0.169

1.270TYP

0.185
0.050TYP

e1

2.440

2.640

0.096

0.104

14.100

14.500

0.555

0.571

1.600

0.000

0.380

0.063
0.000

0.015